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Efficient electronic cooling above 2 K by niobium-based superconducting tunnel junctions
Authors:
J. Hätinen,
A. Ronzani,
R. P. Loreto,
E. Mykkänen,
A. Kemppinen,
K. Viisanen,
T. Rantanen,
J. Geisor,
J. Lehtinen,
M. Ribeiro,
J-P. Kaikkonen,
O. Prakash,
V. Vesterinen,
W. Förbom,
E. T. Mannila,
M. Kervinen,
J. Govenius,
M. Prunnila
Abstract:
Numerous applications, from industrial non-destructive imaging through ultra-sensitive photon counting to various implementations of solid-state quantum computers require low temperatures for their sensor and processor chips. Replacing the bulky cryo-liquid based cooling stages of cryo-enabled instruments by chip scale refrigeration is envisioned to disruptively reduce the system size similarly as…
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Numerous applications, from industrial non-destructive imaging through ultra-sensitive photon counting to various implementations of solid-state quantum computers require low temperatures for their sensor and processor chips. Replacing the bulky cryo-liquid based cooling stages of cryo-enabled instruments by chip scale refrigeration is envisioned to disruptively reduce the system size similarly as microprocessors did for computers. Chip scale cooling has been demonstrated with electronic refrigerators based on tunnel junctions in the sub-1 K temperature range. Here, we extend the operation temperature to above 2 K, thereby, bridging the gap between electronic and pulse tube refrigerators. We report on scalable Al-AlOx-Nb superconducting tunnel junction cooler technology that can deliver electronic cooling power of ~ mW/mm^2, which is enough to demonstrate significant electron temperature reduction of 0.82 K against the phonon bath at 2.4 K (34% relative cooling). Our work shows that the key material of integrated superconducting circuits (niobium) enables powerful cryogenic refrigerator technology. This result is a prerequisite for practical cryogenic chip scale refrigerators and, at the same time, it introduces a new electro-thermal tool for quantum heat transport experiments.
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Submitted 13 March, 2024;
originally announced March 2024.
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Effect of ion irradiation on superconducting thin films
Authors:
Katja Kohopää,
Alberto Ronzani,
Robab Najafi Jabdaraghi,
Arijit Bera,
Mário Ribeiro,
Dibyendu Hazra,
Jorden Senior,
Mika Prunnila,
Joonas Govenius,
Janne S. Lehtinen,
Antti Kemppinen
Abstract:
We demonstrate ion irradiation by argon or gallium as a wafer-scale post-processing method to increase disorder in superconducting thin films. We study several widely used superconductors, both single-elements and compounds. We show that ion irradiation increases normal-state resistivity in all our films, which is expected to enable tuning their superconducting properties, for example, toward high…
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We demonstrate ion irradiation by argon or gallium as a wafer-scale post-processing method to increase disorder in superconducting thin films. We study several widely used superconductors, both single-elements and compounds. We show that ion irradiation increases normal-state resistivity in all our films, which is expected to enable tuning their superconducting properties, for example, toward higher kinetic inductance. We observe an increase of superconducting transition temperature for Al and MoSi, and a decrease for Nb, NbN, and TiN. In MoSi, ion irradiation also improves the mixing of the two materials. We demonstrate fabrication of an amorphous and homogeneous film of MoSi with uniform thickness, which is promising, e.g., for superconducting nanowire single-photon detectors.
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Submitted 19 June, 2024; v1 submitted 20 March, 2023;
originally announced March 2023.
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Thermal resistance in superconducting flip-chip assemblies
Authors:
Joel Hätinen,
Emma Mykkänen,
Klaara Viisanen,
Alberto Ronzani,
Antti Kemppinen,
Lassi Lehtisyrjä,
Janne S. Lehtinen,
Mika Prunnila
Abstract:
Cryogenic microsystems that utilize different 3D integration techniques are being actively developed, e.g., for the needs of quantum technologies. 3D integration can introduce opportunities and challenges to the thermal management of low temperature devices. In this work, we investigate sub-1 K inter-chip thermal resistance of a flip-chip bonded assembly, where two silicon chips are interconnected…
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Cryogenic microsystems that utilize different 3D integration techniques are being actively developed, e.g., for the needs of quantum technologies. 3D integration can introduce opportunities and challenges to the thermal management of low temperature devices. In this work, we investigate sub-1 K inter-chip thermal resistance of a flip-chip bonded assembly, where two silicon chips are interconnected by compression bonding via indium bumps. The total thermal contact area between the chips is 0.306 mm$^2$ and we find that the temperature dependence of the inter-chip thermal resistance follows the power law of $αT^{-3}$, with $α= 7.7-15.4$ K$^4$$μ$m$^2$/nW. The $T^{-3}$ relation indicates phononic interfacial thermal resistance, which is supported by the vanishing contribution of the electrons to the thermal conduction, due to the superconducting interconnections. Such a thermal resistance value can introduce a thermalization bottleneck in particular at cryogenic temperatures. This can be detrimental for some applications, yet it can also be harnessed. We provide an example of both cases by estimating the parasitic overheating of a cryogenic flip-chip assembly operated under various heat loads as well as simulate the performance of solid-state junction microrefrigerators utilizing the observed thermal isolation.
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Submitted 10 October, 2023; v1 submitted 2 March, 2023;
originally announced March 2023.
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Phonon-blocked junction refrigerators for cryogenic quantum devices
Authors:
E. Mykkänen,
J. S. Lehtinen,
A. Ronzani,
A. Kemppinen,
A. Alkurdi,
P. -O. Chapuis,
M. Prunnila
Abstract:
Refrigeration is an important enabler for quantum technology. The very low energy of the fundamental excitations typically utilized in quantum technology devices and systems requires temperature well below 1 K. Expensive cryostats are utilized in reaching sub-1 K regime and solid-state cooling solutions would revolutionize the field. New electronic micro-coolers based on phonon-blocked semiconduct…
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Refrigeration is an important enabler for quantum technology. The very low energy of the fundamental excitations typically utilized in quantum technology devices and systems requires temperature well below 1 K. Expensive cryostats are utilized in reaching sub-1 K regime and solid-state cooling solutions would revolutionize the field. New electronic micro-coolers based on phonon-blocked semiconductor-superconductor junctions could provide a viable route to such miniaturization. Here, we investigate the performance limits of these junction refrigerators.
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Submitted 13 September, 2022;
originally announced September 2022.
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Scalable on-chip multiplexing of silicon single and double quantum dots
Authors:
Heorhii Bohuslavskyi,
Alberto Ronzani,
Joel Hätinen,
Arto Rantala,
Andrey Shchepetov,
Panu Koppinen,
Mika Prunnila,
Janne S. Lehtinen
Abstract:
The scalability of the quantum processor technology is elemental factor in reaching fault-tolerant quantum computing. Owing to the maturity of microelectronics, quantum bits (qubits) realized with spins in silicon quantum dots are considered among the most promising technologies for building scalable quantum computers. However, several challenges need to be solved to realize quantum-dot-based quan…
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The scalability of the quantum processor technology is elemental factor in reaching fault-tolerant quantum computing. Owing to the maturity of microelectronics, quantum bits (qubits) realized with spins in silicon quantum dots are considered among the most promising technologies for building scalable quantum computers. However, several challenges need to be solved to realize quantum-dot-based quantum processors. In this respect, ultra-low-power on-chip cryogenic classical complementary metal oxide semiconductor (CMOS) electronics for control, read-out, and interfacing of the qubits is an important milestone. We report scalable interfacing of tunable electron and hole quantum dots embedded in a 64-channel cryogenic multiplexer, which has less-than-detectable static power dissipation. Our integrated hybrid quantum-dot CMOS technology provides a plausible route to scalable interfacing of a large number of quantum dot devices, enabling variability analysis and quantum dot qubit geometry optimization, which are prerequisites for building large-scale silicon-based quantum computers. We analyze charge noise and obtain state-of-the-art addition energies and gate lever arms in electron and hole quantum dots. The demonstrated electrostatically-defined quantum dots and cryogenic transistors with sharp turning-on transfer characteristics, made by harnessing a CMOS process that utilizes a conventional doped-Poly-Si/SiO2/Si MOS stack, constitute a promising platform for spin qubits monolithically integrated with cryo-CMOS electronics.
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Submitted 30 December, 2023; v1 submitted 25 August, 2022;
originally announced August 2022.
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Qubit-compatible substrates with superconducting through-silicon vias
Authors:
K. Grigoras,
N. Yurttagül,
J. -P. Kaikkonen,
E. T. Mannila,
P. Eskelinen,
D. P. Lozano,
H. -X. Li,
M. Rommel,
D. Shiri,
N. Tiencken,
S. Simbierowicz,
A. Ronzani,
J. Hätinen,
D. Datta,
V. Vesterinen,
L. Grönberg,
J. Biznárová,
A. Fadavi Roudsari,
S. Kosen,
A. Osman,
M. Prunnila,
J. Hassel,
J. Bylander,
J. Govenius
Abstract:
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the ar…
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We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
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Submitted 8 November, 2022; v1 submitted 25 January, 2022;
originally announced January 2022.
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Building Blocks of a Flip-Chip Integrated Superconducting Quantum Processor
Authors:
Sandoko Kosen,
Hang-Xi Li,
Marcus Rommel,
Daryoush Shiri,
Christopher Warren,
Leif Grönberg,
Jaakko Salonen,
Tahereh Abad,
Janka Biznárová,
Marco Caputo,
Liangyu Chen,
Kestutis Grigoras,
Göran Johansson,
Anton Frisk Kockum,
Christian Križan,
Daniel Pérez Lozano,
Graham Norris,
Amr Osman,
Jorge Fernández-Pendás,
Alberto Ronzani,
Anita Fadavi Roudsari,
Slawomir Simbierowicz,
Giovanna Tancredi,
Andreas Wallraff,
Christopher Eichler
, et al. (2 additional authors not shown)
Abstract:
We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods…
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We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods and discuss the sensitivity of device parameters to variation in interchip spacing. Notably, the additional flip-chip fabrication steps do not degrade the qubit performance compared to our baseline state-of-the-art in single-chip, planar circuits. This integration technique can be extended to the realisation of quantum processors accommodating hundreds of qubits in one module as it offers adequate input/output wiring access to all qubits and couplers.
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Submitted 14 June, 2022; v1 submitted 5 December, 2021;
originally announced December 2021.
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Cascaded superconducting junction refrigerators: optimization and performance limits
Authors:
A. Kemppinen,
A. Ronzani,
E. Mykkänen,
J. Hätinen,
J. S. Lehtinen,
M. Prunnila
Abstract:
We demonstrate highly transparent silicon-vanadium and silicon-aluminum tunnel junctions with relatively low sub-gap leakage current and discuss how a trade-off typically encountered between transparency and leakage affects their refrigeration performance. We theoretically investigate cascaded superconducting tunnel junction refrigerators with two or more refrigeration stages. In particular, we de…
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We demonstrate highly transparent silicon-vanadium and silicon-aluminum tunnel junctions with relatively low sub-gap leakage current and discuss how a trade-off typically encountered between transparency and leakage affects their refrigeration performance. We theoretically investigate cascaded superconducting tunnel junction refrigerators with two or more refrigeration stages. In particular, we develop an approximate method that takes into account self-heating effects but still allows us to optimize the cascade a single stage at a time. We design a cascade consisting of energy-efficient refrigeration stages, which makes cooling of, e.g., quantum devices from above 1 K to below 100 mK a realistic experimental target.
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Submitted 5 August, 2021; v1 submitted 29 September, 2020;
originally announced September 2020.
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Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
Authors:
**gyu Duan,
Janne S. Lehtinen,
Michael A. Fogarty,
Simon Schaal,
Michelle Lam,
Alberto Ronzani,
Andrey Shchepetov,
Panu Koppinen,
Mika Prunnila,
Fernando Gonzalez-Zalba,
John J. L. Morton
Abstract:
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to dem…
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We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon.
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Submitted 29 September, 2020;
originally announced September 2020.
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Utilization of the Superconducting Transition for Characterizing Low-Quality-Factor Superconducting Resonators
Authors:
Yu-Cheng Chang,
Bayan Karimi,
Jorden Senior,
Alberto Ronzani,
Joonas T. Peltonen,
Hsi-Sheng Goan,
Chii-Dong Chen,
Jukka P. Pekola
Abstract:
Characterizing superconducting microwave resonators with highly dissipative elements is a technical challenge, but a requirement for implementing and understanding the operation of hybrid quantum devices involving dissipative elements, e.g. for thermal engineering and detection. We present experiments on $λ/4$ superconducting niobium coplanar waveguide (CPW) resonators, terminating at the antinode…
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Characterizing superconducting microwave resonators with highly dissipative elements is a technical challenge, but a requirement for implementing and understanding the operation of hybrid quantum devices involving dissipative elements, e.g. for thermal engineering and detection. We present experiments on $λ/4$ superconducting niobium coplanar waveguide (CPW) resonators, terminating at the antinode by a dissipative copper microstrip via aluminum leads, such that the resonator response is difficult to measure in a typical microwave environment. By measuring the transmission both above and below the superconducting transition of aluminum, we are able to isolate the resonance. We then experimentally verify this method with copper microstrips of increasing thicknesses, from 50 nm to 150 nm, and measure quality factors in the range of $10\sim67$ in a consistent way.
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Submitted 18 June, 2019; v1 submitted 3 April, 2019;
originally announced April 2019.
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Tunable photonic heat transport in a quantum heat valve
Authors:
Alberto Ronzani,
Bayan Karimi,
Jorden Senior,
Yu-Cheng Chang,
Joonas T. Peltonen,
ChiiDong Chen,
Jukka P. Pekola
Abstract:
Quantum thermodynamics is emerging both as a topic of fundamental research and as means to understand and potentially improve the performance of quantum devices. A prominent platform for achieving the necessary manipulation of quantum states is superconducting circuit quantum electrodynamics (QED). In this platform, thermalization of a quantum system can be achieved by interfacing the circuit QED…
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Quantum thermodynamics is emerging both as a topic of fundamental research and as means to understand and potentially improve the performance of quantum devices. A prominent platform for achieving the necessary manipulation of quantum states is superconducting circuit quantum electrodynamics (QED). In this platform, thermalization of a quantum system can be achieved by interfacing the circuit QED subsystem with a thermal reservoir of appropriate Hilbert dimensionality. Here we study heat transport through an assembly consisting of a superconducting qubit capacitively coupled between two nominally identical coplanar waveguide resonators, each equipped with a heat reservoir in the form of a normal-metal mesoscopic resistor termination. We report the observation of tunable photonic heat transport through the resonator-qubit-resonator assembly, showing that the reservoir-to-reservoir heat flux depends on the interplay between the qubit-resonator and the resonator-reservoir couplings, yielding qualitatively dissimilar results in different coupling regimes. Our quantum heat valve is relevant for the realisation of quantum heat engines and refrigerators, that can be obtained, for example, by exploiting the time-domain dynamics and coherence of driven superconducting qubits. This effort would ultimately bridge the gap between the fields of quantum information and thermodynamics of mesoscopic systems.
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Submitted 22 May, 2018; v1 submitted 28 January, 2018;
originally announced January 2018.
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Josephson photodetectors via temperature-to-phase conversion
Authors:
P. Virtanen,
A. Ronzani,
F. Giazotto
Abstract:
We theoretically investigate the temperature-to-phase conversion (TPC) process occurring in dc superconducting quantum interferometers based on superconductor--normal metal--superconductor (SNS) mesoscopic Josephson junctions. In particular, we predict the temperature-driven rearrangement of the phase gradients in the interferometer under the fixed constraints of fluxoid quantization and supercurr…
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We theoretically investigate the temperature-to-phase conversion (TPC) process occurring in dc superconducting quantum interferometers based on superconductor--normal metal--superconductor (SNS) mesoscopic Josephson junctions. In particular, we predict the temperature-driven rearrangement of the phase gradients in the interferometer under the fixed constraints of fluxoid quantization and supercurrent conservation. This allows sizeable phase variations across the junctions for suitable structure parameters and temperatures. We show that the TPC can be a basis for sensitive single-photon sensors or bolometers. We propose a radiation detector realizable with conventional materials and state-of-the-art nanofabrication techniques. Integrated with a superconducting quantum interference proximity transistor (SQUIPT) as a readout set-up, an aluminum (Al)-based TPC calorimeter can provide a large signal to noise (S/N) ratio $>100$ in the 10~GHz$\cdots$10~THz frequency range, and a resolving power larger than $10^2$ below 50~mK for THz photons. In the bolometric operation, electrical NEP of $\sim10^{-22}$~W$/\sqrt{\text{Hz}}$ is predicted at 50 mK. This device can be attractive as a cryogenic single-photon sensor operating in the giga- and terahertz regime, with applications in dark matter searches.
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Submitted 18 May, 2018; v1 submitted 15 March, 2017;
originally announced March 2017.
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Phase-driven collapse of the Cooper condensate in a nanosized superconductor
Authors:
Alberto Ronzani,
Carles Altimiras,
Sophie D'Ambrosio,
Pauli Virtanen,
Francesco Giazotto
Abstract:
Superconductivity can be understood in terms of a phase transition from an uncorrelated electron gas to a condensate of Cooper pairs in which the relative phases of the constituent electrons are coherent over macroscopic length scales. The degree of correlation is quantified by a complex-valued order parameter, whose amplitude is proportional to the strength of the pairing potential in the condens…
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Superconductivity can be understood in terms of a phase transition from an uncorrelated electron gas to a condensate of Cooper pairs in which the relative phases of the constituent electrons are coherent over macroscopic length scales. The degree of correlation is quantified by a complex-valued order parameter, whose amplitude is proportional to the strength of the pairing potential in the condensate. Supercurrent-carrying states are associated with non-zero values of the spatial gradient of the phase. The pairing potential and several physical observables of the Cooper condensate can be manipulated by means of temperature, current bias, dishomogeneities in the chemical composition or application of a magnetic field. Here we show evidence of complete suppression of the energy gap in the local density of quasiparticle states (DOS) of a superconducting nanowire upon establishing a phase difference equal to pi over a length scale comparable to the superconducting coherence length. These observations are consistent with a complete collapse of the pairing potential in the center of the wire, in accordance with theoretical modeling based on the quasiclassical theory of superconductivity in diffusive systems. Our spectroscopic data, fully exploring the phase-biased states of the condensate, highlight the profound effect that extreme phase gradients exert on the amplitude of the pairing potential. Moreover, the sharp magnetic response observed near the onset of the superconducting gap collapse regime can be exploited to realize ultra-low noise magnetic flux detectors.
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Submitted 19 May, 2017; v1 submitted 18 November, 2016;
originally announced November 2016.
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Spectral characteristics of a fully-superconducting SQUIPT
Authors:
P. Virtanen,
A. Ronzani,
F. Giazotto
Abstract:
We consider properties of a fully superconducting variant of the superconducting quantum interference proximity transistor magnetic flux sensor. We study the density of states in a finite-size superconducting metal wire in the diffusive limit, and how it depends on the phase gradient of the order parameter. We describe the dependence on the junction length and interface transparency, and discuss p…
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We consider properties of a fully superconducting variant of the superconducting quantum interference proximity transistor magnetic flux sensor. We study the density of states in a finite-size superconducting metal wire in the diffusive limit, and how it depends on the phase gradient of the order parameter. We describe the dependence on the junction length and interface transparency, and discuss properties relevant for using the structure in magnetic flux detection applications.
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Submitted 8 November, 2016; v1 submitted 15 July, 2016;
originally announced July 2016.
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Normal metal tunnel junction-based superconducting quantum interference proximity transistor: the N-SQUIPT
Authors:
S. D'Ambrosio,
M. Meissner,
C. Blanc,
A. Ronzani,
F. Giazotto
Abstract:
We report the fabrication and characterization of an alternative design for a superconducting quantum interference proximity transistor (SQUIPT) based on a normal metal (N) probe. The absence of direct Josephson coupling between the proximized metal nanowire and the N probe allows us to observe the full modulation of the wire density of states around zero voltage and current \textit{via} the appli…
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We report the fabrication and characterization of an alternative design for a superconducting quantum interference proximity transistor (SQUIPT) based on a normal metal (N) probe. The absence of direct Josephson coupling between the proximized metal nanowire and the N probe allows us to observe the full modulation of the wire density of states around zero voltage and current \textit{via} the application of an external magnetic field. This results into a drastic suppression of power dissipation which can be as low as a few $\sim 10^{-17}$ W. In this context the interferometer allows an improvement of up to four orders of magnitude with respect to earlier SQUIPT designs, and makes it ideal for extra-low power cryogenic applications. In addition, the N-SQUIPT has been recently predicted to be the enabling candidate for the implementation of coherent caloritronic devices based on proximity effect.
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Submitted 9 November, 2015; v1 submitted 16 June, 2015;
originally announced June 2015.
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Highly-sensitive superconducting quantum interference proximity transistor
Authors:
A. Ronzani,
C. Altimiras,
F. Giazotto
Abstract:
We report the design and implementation of a high-performance superconducting quantum interference proximity transistor (SQUIPT) based on aluminum-copper (Al-Cu) technology. With the adoption of a thin and short copper nanowire we demostrate full phase-driven modulation of the proximity-induced minigap in the normal metal density of states. Under optimal bias we record unprecedently high flux-to-v…
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We report the design and implementation of a high-performance superconducting quantum interference proximity transistor (SQUIPT) based on aluminum-copper (Al-Cu) technology. With the adoption of a thin and short copper nanowire we demostrate full phase-driven modulation of the proximity-induced minigap in the normal metal density of states. Under optimal bias we record unprecedently high flux-to-voltage (up to 3 mV/$Φ_0$) and flux-to-current (exceeding 100 nA/$Φ_0$) transfer function values at sub-Kelvin temperatures, where $Φ_0$ is the flux quantum. The best magnetic flux resolution (as low as 500 n$Φ_0/\sqrt{Hz}$ at 240 mK, being limited by the room temperature pre-amplification stage) is reached under fixed current bias. These figures of merit combined with ultra-low power dissipation and micrometer-size dimensions make this mesoscopic interferometer attractive for low-temperature applications such as the investigation of the magnetization of small spin populations.
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Submitted 16 July, 2014; v1 submitted 16 April, 2014;
originally announced April 2014.
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Balanced double-loop mesoscopic interferometer based on Josephson proximity nanojunctions
Authors:
Alberto Ronzani,
Carles Altimiras,
Francesco Giazotto
Abstract:
We report on the fabrication and characterization of a two-terminal mesoscopic interferometer based on three V/Cu/V Josephson junctions having nanoscale cross-section. The junctions have been arranged in a double-ring geometry realized by metallic thin film deposition through a suspended mask defined by electron beam lithography. Although a significant amount of asymmetry between the critical curr…
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We report on the fabrication and characterization of a two-terminal mesoscopic interferometer based on three V/Cu/V Josephson junctions having nanoscale cross-section. The junctions have been arranged in a double-ring geometry realized by metallic thin film deposition through a suspended mask defined by electron beam lithography. Although a significant amount of asymmetry between the critical current of each junction is observed we show that the interferometer is able to suppress the supercurrent to a level lower than 6 parts per thousand, being here limited by measurement resolution. The present nano-device is suitable for low-temperature magnetometric and gradiometric measurements over the micrometric scale.
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Submitted 10 December, 2013;
originally announced December 2013.
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MicroSQUIDs based on V/Cu/V Josephson nanojunctions
Authors:
Alberto Ronzani,
Matthieu Baillergeau,
Carles Altimiras,
Francesco Giazotto
Abstract:
We report on the fabrication and characterization of microSQUID devices based on nanoscale vanadium/copper/vanadium Josephson weak links. Magnetically driven quantum interference patterns have been measured for temperatures in the 0.24 - 2 K range. As magnetometers, these devices obtain flux-to-voltage transfer function values as high as 450 microV/Phi_0 leading to promising magnetic flux resoluti…
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We report on the fabrication and characterization of microSQUID devices based on nanoscale vanadium/copper/vanadium Josephson weak links. Magnetically driven quantum interference patterns have been measured for temperatures in the 0.24 - 2 K range. As magnetometers, these devices obtain flux-to-voltage transfer function values as high as 450 microV/Phi_0 leading to promising magnetic flux resolution Phi_N < 3 microPhi_0 / Hz^(1/2), being here limited by the room temperature preamplification stage. Significant improvements in the flux noise performance figures, which are already competitive with existing state-of-the-art commercial SQUIDs systems, are expected either with cryogenic preamplification or with the adoption of optimized electronic readout stages based on active feedback schemes.
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Submitted 16 May, 2013;
originally announced May 2013.
