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Charge dynamics in the 2D/3D semiconductor heterostructure WSe$_2$/GaAs
Authors:
Rafael R. Rojas-Lopez,
Freddie Hendriks,
Caspar H. van der Wal,
Paulo S. S. Guimarães,
Marcos H. D. Guimarães
Abstract:
Understanding the relaxation and recombination processes of excited states in two-dimensional (2D)/three-dimensional (3D) semiconductor heterojunctions is essential for develo** efficient optical and (opto)electronic devices which integrate new 2D materials with more conventional 3D ones. In this work, we unveil the carrier dynamics and charge transfer in a monolayer of WSe$_2$ on a GaAs substra…
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Understanding the relaxation and recombination processes of excited states in two-dimensional (2D)/three-dimensional (3D) semiconductor heterojunctions is essential for develo** efficient optical and (opto)electronic devices which integrate new 2D materials with more conventional 3D ones. In this work, we unveil the carrier dynamics and charge transfer in a monolayer of WSe$_2$ on a GaAs substrate. We use time-resolved differential reflectivity to study the charge relaxation processes involved in the junction and how they change when compared to an electrically decoupled heterostructure, WSe$_2$/hBN/GaAs. We observe that the monolayer in direct contact with the GaAs substrate presents longer optically-excited carrier lifetimes (3.5 ns) when compared with the hBN-isolated region (1 ns), consistent with a strong reduction of radiative decay and a fast charge transfer of a single polarity. Through low-temperature measurements, we find evidence of a type-II band alignment for this heterostructure with an exciton dissociation that accumulates electrons in the GaAs and holes in the WSe$_2$. The type-II band alignment and fast photo-excited carrier dissociation shown here indicate that WSe$_2$/GaAs is a promising junction for new photovoltaic and other optoelectronic devices, making use of the best properties of new (2D) and conventional (3D) semiconductors.
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Submitted 25 September, 2023;
originally announced September 2023.
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Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor
Authors:
Freddie Hendriks,
Rafael R. Rojas-Lopez,
Bert Koopmans,
Marcos H. D. Guimaraes
Abstract:
Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magne…
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Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magnetization dynamics in the van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ can be effectively controlled by electrostatic gates, with a one order of magnitude change in the precession amplitude and over 10% change in the internal effective field. In contrast to the purely thermally-induced mechanisms previously reported for 2D magnets, we find that coherent opto-magnetic phenomena play a major role in the excitation of magnetization dynamics in Cr$_2$Ge$_2$Te$_6$. Our work sets the first steps towards electric control over the magnetization dynamics in 2D ferromagnetic semiconductors, demonstrating their potential for applications in ultrafast opto-magnonic devices.
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Submitted 22 September, 2023;
originally announced September 2023.
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Magnetic field control of light-induced spin accumulation in monolayer MoSe$_2$
Authors:
Rafael R. Rojas-Lopez,
Freddie Hendriks,
Caspar H. van der Wal,
Paulo S. S. Guimarães,
Marcos H. D. Guimarães
Abstract:
Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic field is applied, time-reversal symmetry is broken and the energies of the spin-polarized bands shift, resulting in different bandgaps and dynamics in the K$_+$ an…
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Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic field is applied, time-reversal symmetry is broken and the energies of the spin-polarized bands shift, resulting in different bandgaps and dynamics in the K$_+$ and K$_-$ valleys. Here, we use time-resolved Kerr rotation to study the magnetic field dependence of the spin dynamics in monolayer MoSe$_2$. We show that the magnetic field can control the light-induced spin accumulation of the two valley states, with a small effect on the recombination lifetimes. We unveil that the magnetic field-dependent spin accumulation is in agreement with hole spin dynamics at the longer timescales, indicating that the electron spins have faster relaxation rates. We propose a rate equation model that suggests that lifting the energy-degeneracy of the valleys induces an ultrafast spin-flip toward the stabilization of the valley with the higher valence band energy. Our results provide an experimental insight into the ultrafast charge and spin dynamics in TMDs and a way to control it, which will be useful for the development of new spintronic and valleytronic applications.
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Submitted 27 February, 2023;
originally announced February 2023.
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Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS$_2$/GaAs
Authors:
Rafael R. Rojas-Lopez,
Juliana C. Brant,
Maíra S. O. Ramos,
Túlio H. L. G. Castro,
Marcos H. D. Guimarães,
Bernardo R. A. Neves,
Paulo S. S. Guimarães
Abstract:
The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS$_2$ wit…
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The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS$_2$ with GaAs it is possible to develop high quality photodetectors and solar cells. Here, we present a study of the effects of intrinsic GaAs, p-doped GaAs, and n-doped GaAs substrates on the photoluminescence of monolayer MoS$_2$. We observe a decrease of an order of magnitude in the emission intensity of MoS$_2$ in all MoS$_2$/GaAs heterojunctions, when compared to a control sample consisting of a MoS$_2$ monolayer isolated from GaAs by a few layers of hexagonal boron nitride. We also see a dependence of the trion to A-exciton emission ratio in the photoluminescence spectra on the type of substrate, a dependence that we relate to the static charge exchange between MoS$_2$ and the substrates when the junction is formed. Scanning Kelvin probe microscopy measurements of the heterojunctions suggest type-I band alignments, so that excitons generated on the MoS$_2$ monolayer will be transferred to the GaAs substrate. Our results shed light on the charge exchange leading to band offsets in 2D/3D heterojunctions which play a central role in the understanding and further improvement of electronic devices.
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Submitted 3 December, 2021;
originally announced December 2021.
