Showing 1–50 of 99 results for author: Rogge, S

Nonlocality activation in a photonic quantum network

Authors: Luis Villegas-Aguilar, Emanuele Polino, Farzad Ghafari, Marco Túlio Quintino, Kiarn Laverick, Ian R. Berkman, Sven Rogge, Lynden K. Shalm, Nora Tischler, Eric G. Cavalcanti, Sergei Slussarenko, Geoff J. Pryde

Abstract: Bell nonlocality refers to correlations between two distant, entangled particles that challenge classical notions of local causality. Beyond its foundational significance, nonlocality is crucial for device-independent technologies like quantum key distribution and randomness generation. Nonlocality quickly deteriorates in the presence of noise, and restoring nonlocal correlations requires addition… ▽ More Bell nonlocality refers to correlations between two distant, entangled particles that challenge classical notions of local causality. Beyond its foundational significance, nonlocality is crucial for device-independent technologies like quantum key distribution and randomness generation. Nonlocality quickly deteriorates in the presence of noise, and restoring nonlocal correlations requires additional resources. These often come in the form of many instances of the input state and joint measurements, incurring a significant resource overhead. Here, we experimentally demonstrate that single copies of Bell-local states, incapable of violating any standard Bell inequality, can give rise to nonlocality after being embedded into a quantum network of multiple parties. We subject the initial entangled state to a quantum channel that broadcasts part of the state to two independent receivers and certify the nonlocality in the resulting network by violating a tailored Bell-like inequality. We obtain these results without making any assumptions about the prepared states, the quantum channel, or the validity of quantum theory. Our findings have fundamental implications for nonlocality and enable the practical use of nonlocal correlations in real-world applications, even in scenarios dominated by noise. △ Less

Submitted 6 May, 2024; v1 submitted 12 September, 2023; originally announced September 2023.

Comments: 14 pages, 6 figures. Final version published in Nature Communications

Journal ref: Nat. Commun. 15, 3112 (2024)

Millisecond electron spin coherence time for erbium ions in silicon

Authors: Ian R. Berkman, Alexey Lyasota, Gabriele G. de Boo, John G. Bartholomew, Shao Q. Lim, Brett C. Johnson, Jeffrey C. McCallum, Bin-Bin Xu, Shouyi Xie, Nikolay V. Abrosimov, Hans-Joachim Pohl, Rose L. Ahlefeldt, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compat… ▽ More Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compatible Er3+ sites with long optical and electron spin coherence times, measured within a nuclear spin-free silicon crystal (<0.01% 29Si) using optical detection. We investigate two sites and find 0.1 GHz optical inhomogeneous linewidths and homogeneous linewidths below 70 kHz for both sites. We measure the electron spin coherence time of both sites using optically detected magnetic resonance and observe Hahn echo decay constants of 0.8 ms and 1.2 ms at around 11 mT. These optical and spin properties of Er3+:Si are an important milestone towards using optically accessible spins in silicon for a broad range of quantum information processing applications. △ Less

Submitted 25 July, 2023; v1 submitted 19 July, 2023; originally announced July 2023.

Comments: 14 pages, 6 figures

Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution

Authors: Yangbo Zhang, Wenda Fan, Jiliang Yang, Hao Guan, Qi Zhang, Xi Qin, Changkui Duan, Gabriele G. de Boo, Brett C. Johnson, Jeffrey C. McCallum, Matthew J. Sellars, Sven Rogge, Chunming Yin, Jiangfeng Du

Abstract: Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the p… ▽ More Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionization detection. With this technique, the optically excited state lifetime of a single Er$^{3+}$ ion in a Si nano-transistor is measured for the first time to be 0.49 $\pm$ 0.04 $μ$s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centers in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques. △ Less

Submitted 1 December, 2022; originally announced December 2022.

Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation

Authors: David Mikhail, Benoit Voisin, Dominique Didier St Medar, Gilles Buchs, Sven Rogge, Stephan Rachel

Abstract: We study the effects of electron-electron interactions on the charge excitation spectrum of the spinful Su-Schrieffer-Heeger (SSH) model, a prototype of a 1D bulk obstructed topological insulator. In view of recent progress in the fabrication of dopant-based quantum simulators we focus on experimentally detectable signatures of interacting topology in finite lattices. To this end we use Lanczos-ba… ▽ More We study the effects of electron-electron interactions on the charge excitation spectrum of the spinful Su-Schrieffer-Heeger (SSH) model, a prototype of a 1D bulk obstructed topological insulator. In view of recent progress in the fabrication of dopant-based quantum simulators we focus on experimentally detectable signatures of interacting topology in finite lattices. To this end we use Lanczos-based exact diagonalization to calculate the single-particle spectral function in real space which generalizes the local density of states to interacting systems. Its spatial and spectral resolution allows for the direct investigation and identification of edge states. By studying the non-interacting limit, we demonstrate that the topological in-gap states on the boundary are robust against both finite-size effects as well as random bond and onsite disorder which suggests the feasibility of simulating the SSH model in engineered dopant arrays in silicon. While edge excitations become zero-energy spin-like for any finite interaction strength, our analysis of the spectral function shows that the single-particle charge excitations are gapped out on the boundary. Despite the loss of topological protection we find that these edge excitations are quasiparticle-like as long as they remain within the bulk gap. Above a critical interaction strength of $U_c\approx 5 t$ these quasiparticles on the boundary loose their coherence which is explained by the merging of edge and bulk states. This is in contrast to the many-body edge excitations which survive the limit of strong coupling, as established in the literature. Our findings show that for moderate repulsive interactions the non-trivial phase of the interacting SSH model can be detected through remnant signatures of topological single-particle states using single-particle local measurement techniques such as scanning tunneling spectroscopy. △ Less

Submitted 8 November, 2022; v1 submitted 8 August, 2022; originally announced August 2022.

Comments: 16 pages + 13 figures; v2: final version

Journal ref: Phys. Rev. B 106, 195408 (2022)

The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si

Authors: Jiliang Yang, Wenda Fan, Yangbo Zhang, Changkui Duan, Gabriele G. de Boo, Rose L. Ahlefeldt, Jevon J. Longdell, Brett C. Johnson, Jeffrey C. McCallum, Matthew J. Sellars, Sven Rogge, Chunming Yin, Jiangfeng Du

Abstract: Er-doped Si is a promising candidate for quantum information applications due to its telecom wavelength optical transition and its compatibility with Si nanofabrication technologies. Recent spectroscopic studies based on photoluminescence excitation have shown multiple well-defined lattice sites that Er occupies in Si. Here we report the first measurement of the Zeeman and hyperfine tensors of a s… ▽ More Er-doped Si is a promising candidate for quantum information applications due to its telecom wavelength optical transition and its compatibility with Si nanofabrication technologies. Recent spectroscopic studies based on photoluminescence excitation have shown multiple well-defined lattice sites that Er occupies in Si. Here we report the first measurement of the Zeeman and hyperfine tensors of a single 167Er3+ ion in Si. All the obtained tensors are highly anisotropic with the largest value principal axes aligning in nearly the same direction, and the trace of the lowest crystal field level g-tensor is 17.78$\pm$0.40. The results indicate that this specific Er site is likely to be a distorted cubic site that exhibits monoclinic (C1) symmetry. Finally, zero first-order-Zeeman (ZEFOZ) fields are identified for this site and could be used to reduce decoherence of hyperfine spin states in future experiments. △ Less

Submitted 24 April, 2022; originally announced April 2022.

Journal ref: Phys. Rev. B 105, 235306 (2022)

Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor

Authors: Jiliang Yang, Jian Wang, Wenda Fan, Yangbo Zhang, Changkui Duan, Guangchong Hu, Gabriele G. de Boo, Brett C. Johnson, Jeffrey C. McCallum, Sven Rogge, Chunming Yin, Jiangfeng Du

Abstract: Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. The spectral broadening creates a significant challenge for achie… ▽ More Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. The spectral broadening creates a significant challenge for achieving entanglement generation and qubit operation with single rare-earth ions, so it is critical to investigate the broadening mechanisms. We report a spectral broadening study on a single Er$^{3+}$ ion in a Si nano-transistor. The Er-induced photoionisation rate is found to be an appropriate quantity to represent the optical transition probability for spectroscopic studies, and the single ion spectra display a Lorentzian lineshape at all optical powers in use. Spectral broadening is observed at relatively high optical powers and is caused by spectral diffusion on a fast time scale. △ Less

Submitted 27 January, 2022; originally announced January 2022.

Journal ref: Phys. Rev. Applied 18, 034018 (2022)

Certified Random Number Generation from Quantum Steering

Authors: Dominick J. Joch, Sergei Slussarenko, Yuanlong Wang, Alex Pepper, Shouyi Xie, Bin-Bin Xu, Ian R. Berkman, Sven Rogge, Geoff J. Pryde

Abstract: The ultimate random number generators are those certified to be unpredictable -- including to an adversary. The use of simple quantum processes promises to provide numbers that no physical observer could predict but, in practice, unwanted noise and imperfect devices can compromise fundamental randomness and protocol security. Certified randomness protocols have been developed which remove the need… ▽ More The ultimate random number generators are those certified to be unpredictable -- including to an adversary. The use of simple quantum processes promises to provide numbers that no physical observer could predict but, in practice, unwanted noise and imperfect devices can compromise fundamental randomness and protocol security. Certified randomness protocols have been developed which remove the need for trust in devices by taking advantage of nonlocality. Here, we use a photonic platform to implement our protocol, which operates in the quantum steering scenario where one can certify randomness in a one-sided device independent framework. We demonstrate an approach for a steering-based generator of public or private randomness, and the first generation of certified random bits, with the detection loophole closed, in the steering scenario. △ Less

Submitted 17 November, 2021; originally announced November 2021.

Comments: 7 pages, 3 figures

Valley population of donor states in highly strained silicon

Authors: B. Voisin, K. S. H. Ng, J. Salfi, M. Usman, J. C. Wong, A. Tankasala, B. C. Johnson, J. C. McCallum, L. Hutin, B. Bertrand, M. Vinet, N. Valanoor, M. Y. Simmons, R. Rahman, L. C. L. Hollenberg, S. Rogge

Abstract: Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.… ▽ More Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.8% and their wave function imaged using spatially resolved spectroscopy. A prevalence of the out-of-plane valleys is confirmed from the real-space images, and a combination of theoretical modelling tools is used to assess how this valley repopulation effect can yield isotropic exchange and tunnel interactions in the $xy$-plane relevant for atomically precise donor qubit devices. Finally, the residual presence of in-plane valleys is evidenced by a Fourier analysis of both experimental and theoretical images, and atomistic calculations highlight the importance of higher orbital excited states to obtain a precise relationship between valley population and strain. Controlling the valley degree of freedom in engineered strained epilayers provides a new competitive asset for the development of donor-based quantum technologies in silicon. △ Less

Submitted 17 September, 2021; originally announced September 2021.

Optical and Zeeman spectroscopy of individual Er ion pairs in silicon

Authors: Guangchong Hu, Rose L. Ahlefeldt, Gabriele G. de Boo, Alexey Lyasota, Brett C. Johnson, Jeffrey C. McCallum, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in the optical spectrum by their characteristic energy level splitting patterns, and linear Zeeman spectra were used to characterise the sites. One pair is positivel… ▽ More We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in the optical spectrum by their characteristic energy level splitting patterns, and linear Zeeman spectra were used to characterise the sites. One pair is positively identified as two identical Er3+ ions in sites of at least C2 symmetry coupled via a large, 200 GHz Ising-like spin interaction and 1.5 GHz resonant optical interaction. Small non-Ising contributions to the spin interaction are attributed to distortion of the site measurable because of the high resolution of the single-ion measurement. The interactions are compared to previous measurements made using rare earth ensemble systems, and the application of this type of strongly coupled ion array to quantum computing is discussed. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Comments: 11 pages, 5 figures

Journal ref: Quantum Sci. Technol. 7, 025019 (2022)

Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection

Authors: Ian R. Berkman, Alexey Lyasota, Gabriele G. de Boo, John G. Bartholomew, Brett C. Johnson, Jeffrey C. McCallum, Bin-Bin Xu, Shouyi Xie, Rose L. Ahlefeldt, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonanc… ▽ More We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonances have been extracted, showing that 5% of the resonances are within 1 GHz of our electrically detected resonances and that the optical lifetimes range from 0.5 ms up to 1.5 ms. We observed inhomogeneous broadening of less than 400 MHz and an upper bound on the homogeneous linewidth of 1.4 MHz and 0.75 MHz for two separate resonances, which is a reduction of more than an order of magnitude observed to date. These narrow optical transition properties show that Er in Si is an excellent candidate for future quantum information and communication applications. △ Less

Submitted 16 August, 2021; originally announced August 2021.

Comments: 12 pages, 13 figures

Journal ref: Phys. Rev. Applied 19, 014037 (2023)

Novel characterisation of dopant-based qubits

Authors: B. Voisin, J. Salfi, R. Rahman, S. Rogge

Abstract: Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building scalable quantum processing architectures relies on accurate quantum state manipulation, which can only be achieved through a complete understanding of the underlying quantum state properties. This article reviews the el… ▽ More Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building scalable quantum processing architectures relies on accurate quantum state manipulation, which can only be achieved through a complete understanding of the underlying quantum state properties. This article reviews the electrical methods that have been developed to probe the quantum states encoded in individual and interacting atom qubits in silicon, from the pioneering single electron tunneling spectroscopy framework in nanoscale transistors, to radio frequency reflectometry to probe coherence properties and scanning tunneling microscopy to directly image the wave function at the atomic scale. Together with the development of atomistic simulations of realistic devices, these methods are today applied to other emerging dopant and optically addressable defect states to accelerate the engineering of quantum technologies in silicon. △ Less

Submitted 1 July, 2021; originally announced July 2021.

Comments: An edited version of this manuscript will appear in MRS Bulletin

Valley interference and spin exchange at the atomic scale in silicon

Authors: B. Voisin, J. Bocquel, A. Tankasala, M. Usman, J. Salfi, R. Rahman, M. Y. Simmons, L. C. L. Hollenberg, S. Rogge

Abstract: Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the different regimes arising from this competition. However, they exploit wavefunctions relying on crystal band symmetries, which tunneling interactions are inherently se… ▽ More Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the different regimes arising from this competition. However, they exploit wavefunctions relying on crystal band symmetries, which tunneling interactions are inherently sensitive to. Here we directly image lattice-aperiodic valley interference between coupled atoms in silicon using scanning tunneling microscopy. Our atomistic analysis unveils the role of envelope anisotropy, valley interference and dopant placement on the Heisenberg spin exchange interaction. We find that the exchange can become immune to valley interference by engineering in-plane dopant placement along specific crystallographic directions. A vacuum-like behaviour is recovered, where the exchange is maximised to the overlap between the donor orbitals, and pair-to-pair variations limited to a factor of less than 10 considering the accuracy in dopant positioning. This robustness remains over a large range of distances, from the strongly Coulomb interacting regime relevant for high-fidelity quantum computation to strongly coupled donor arrays of interest for quantum simulation in silicon. △ Less

Submitted 23 May, 2021; originally announced May 2021.

Journal ref: Nature Communications 11, 6124 (2020)

Flop**-mode electric dipole spin resonance in phosphorus donor qubits in silicon

Authors: F. N. Krauth, S. K. Gorman, Y. He, M. T. Jones, P. Macha, S. Kocsis, C. Chua, B. Voisin, S. Rogge, R. Rahman, Y. Chung, M. Y. Simmons

Abstract: Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flop**-mode electric dipole spin resonance qubit based on the combi… ▽ More Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flop**-mode electric dipole spin resonance qubit based on the combined electron and nuclear spin states of a double phosphorus donor quantum dot. The key advantage of utilising a donor-based system is that we can engineer the number of donor nuclei in each quantum dot. By creating multi-donor dots with antiparallel nuclear spin states and multi-electron occupation we can minimise the longitudinal magnetic field gradient, known to couple charge noise into the device and dephase the qubit. We describe the operation of the qubit and show that by minimising the hyperfine interaction of the nuclear spins we can achieve $π/2-X$ gate error rates of $\sim 10^{-4}$ using realistic noise models. We highlight that the low charge noise environment in these all-epitaxial phosphorus-doped silicon qubits will facilitate the realisation of strong coupling of the qubit to superconducting microwave cavities allowing for long-distance two-qubit operations. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Comments: Main text: 8 pages, 4 figures. Appendix: 9 page, 3 figures

Spin-photon coupling for atomic qubit devices in silicon

Authors: Edyta N. Osika, Sacha Kocsis, Yu-Ling Hsueh, Serajum Monir, Cassandra Chua, Hubert Lam, Benoit Voisin, Sven Rogge, Rajib Rahman

Abstract: Electrically addressing spin systems is predicted to be a key component in develo** scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manipulation and long-distance entanglement via microwave photons. However, single spins have no electric dipole, and therefore a spin-orbit mechanism must be integrated in the qubit design. Here, we propose to couple microwa… ▽ More Electrically addressing spin systems is predicted to be a key component in develo** scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manipulation and long-distance entanglement via microwave photons. However, single spins have no electric dipole, and therefore a spin-orbit mechanism must be integrated in the qubit design. Here, we propose to couple microwave photons to atomically precise donor spin qubit devices in silicon using the hyperfine interaction intrinsic to donor systems and an electrically-induced spin-orbit coupling. We characterise a one-electron system bound to a tunnel-coupled donor pair (1P-1P) using the tight-binding method, and then estimate the spin-photon coupling achievable under realistic assumptions. We address the recent experiments on double quantum dots (DQDs) in silicon and indicate the differences between DQD and 1P-1P systems. Our analysis shows that it is possible to achieve strong spin-photon coupling in 1P-1P systems in realistic device conditions without the need for an external magnetic field gradient. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. Applied 17, 054007 (2022)

High rate nanofluidic energy absorption in porous zeolitic frameworks

Authors: Yueting Sun, Sven M. J. Rogge, Aran Lamaire, Steven Vandenbrande, Jelle Wieme, Clive R. Siviour, Veronique Van Speybroeck, **-Chong Tan

Abstract: Optimal mechanical impact absorbers are reusable and exhibit high specific energy absorption. The forced intrusion of liquid water in hydrophobic nanoporous materials, such as zeolitic imidazolate frameworks (ZIFs), presents an attractive pathway to engineer such systems. However, to harness their full potential, it is crucial to understand the underlying water intrusion and ex-trusion mechanisms… ▽ More Optimal mechanical impact absorbers are reusable and exhibit high specific energy absorption. The forced intrusion of liquid water in hydrophobic nanoporous materials, such as zeolitic imidazolate frameworks (ZIFs), presents an attractive pathway to engineer such systems. However, to harness their full potential, it is crucial to understand the underlying water intrusion and ex-trusion mechanisms under realistic, high-rate deformation conditions. Herein, we report a critical increase of the energy absorption capacity of confined water-ZIF systems at elevated strain rates. Starting from ZIF-8 as proof-of-concept, we demonstrate that this attractive rate depend-ence is generally applicable to cage-type ZIFs but disappears for channel-containing zeolites. Molecular simulations reveal that this phenomenon originates from the intrinsic nanosecond timescale needed for critical-sized water clusters to nucleate inside the nanocages, expediting water transport through the framework. Harnessing this fundamental understanding, design rules are formulated to construct effective, tailorable, and reusable impact energy absorbers for challenging new applications. △ Less

Submitted 28 April, 2021; originally announced April 2021.

Comments: 35 pages, 6 Figures, 1 Supplementary Information

Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators

Authors: Bin-Bin Xu, Gabriele G. de Boo, Brett C. Johnson, Miloš Rančić, Alvaro Casas Bedoya, Blair Morrison, Jeffrey C. McCallum, Benjamin J. Eggleton, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon micro-ring cavity that can function… ▽ More Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon micro-ring cavity that can function at cryogenic temperatures. We verify that the shallow do** layer affects the local refractive index while inducing minimal losses with quality factors up to 10$^5$. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform. △ Less

Submitted 11 October, 2020; originally announced November 2020.

Comments: 6 figures

Journal ref: Phys. Rev. Applied 15, 044014 (2021)

Texture Formation in Polycrystalline Thin Films of All-Inorganic Lead Halide Perovskite

Authors: Julian A. Steele, Eduardo Solano, Handong **, Vittal Prakasam, Tom Braeckevelt, Haifeng Yuan, Zhenni Lin, René de Kloe, Qiong Wang, Sven M. J. Rogge, Veronique Van Speybroeck, Dmitry Chernyshov, Johan Hofkens, Maarten B. J. Roeffaers

Abstract: Controlling grain orientations within polycrystalline all-inorganic halide perovskite solar cells can help increase conversion efficiencies toward their thermodynamic limits, however the forces governing texture formation are ambiguous. Using synchrotron X-ray diffraction, we report meso-structure formation within polycrystalline CsPbI2.85Br0.15 powders as they cool from a high-temperature cubic p… ▽ More Controlling grain orientations within polycrystalline all-inorganic halide perovskite solar cells can help increase conversion efficiencies toward their thermodynamic limits, however the forces governing texture formation are ambiguous. Using synchrotron X-ray diffraction, we report meso-structure formation within polycrystalline CsPbI2.85Br0.15 powders as they cool from a high-temperature cubic perovskite (α-phase). Tetragonal distortions (\b{eta}-phase) trigger preferential crystallographic alignment within polycrystalline ensembles, a feature we suggest is coordinated across multiple neighboring grains via interfacial forces that select for certain lattice distortions over others. External anisotropy is then imposed on polycrystalline thin films of orthorhombic (γ-phase) CsPbI3-xBrx perovskite via substrate clam**, revealing two fundamental uniaxial texture formations; (i) I-rich films possess orthorhombic-like texture (<100> out-of-plane; <010> and <001> in-plane), while (ii) Br-rich films form tetragonal-like texture (<110> out-of-plane; <1-10> and <001> in-plane). In contrast to relatively uninfluential factors like the choice of substrate, film thickness and annealing temperature, Br incorporation modifies the γ-CsPbI3-xBrx crystal structure by reducing the orthorhombic lattice distortion (making it more tetragonal-like) and governs the formation of the different, energetically favored textures within polycrystalline thin films. △ Less

Submitted 16 January, 2021; v1 submitted 27 October, 2020; originally announced October 2020.

Comments: Supporting information attached to end of document. Work has been accepted

Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation

Authors: D. Holmes, B. C. Johnson, C. Chua, B. Voisin, S. Kocsis, S. Rubanov, S. G. Robson, J. C. McCallum, D. R McCamey, S. Rogge, D. N. Jamieson

Abstract: Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic perturbations from surrounding $^{29}$Si nuclear spins (I=1/2), present in natural Si (nat Si) at an abundance of 4.67%. We isotopically enrich surface layers of… ▽ More Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic perturbations from surrounding $^{29}$Si nuclear spins (I=1/2), present in natural Si (nat Si) at an abundance of 4.67%. We isotopically enrich surface layers of nat Si by sputtering using high fluence $^{28}$Si$^-$ implantation. Phosphorus (P) donors implanted into one such $^{28}$Si layer with ~3000 ppm $^{29}$Si, produced by implanting 30 keV $^{28}$Si$^-$ ions at a fluence of 4x10^18 cm^-2, were measured with pulsed electron spin resonance, confirming successful donor activation upon annealing. The mono-exponential decay of the Hahn echo signal indicates a depletion of $^{29}$Si. A coherence time of T2 = 285 +/- 14 us is extracted, which is longer than that obtained in nat Si for similar do** concentrations and can be increased by reducing the P concentration in future. The isotopic enrichment was improved by employing one-for-one ion sputtering using 45 keV $^{28}$Si$^-$ implantation. A fluence of 2.63x10^18 cm^-2 $^{28}$Si$^-$ ions were implanted at this energy into nat Si, resulting in an isotopically enriched surface layer ~100 nm thick; suitable for providing a sufficient volume of $^{28}$Si for donor qubits implanted into the near-surface region. We observe a depletion of $^{29}$Si to 250 ppm as measured by secondary ion mass spectrometry. The impurity content and the crystallization kinetics via solid phase epitaxy are discussed. The $^{28}$Si layer is confirmed to be a single crystal using transmission electron microscopy. This method of Si isotopic enrichment shows promise for incorporating into the fabrication process flow of Si spin qubit devices. △ Less

Submitted 17 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Materials 5, 014601 (2021)

Scanned single-electron probe inside a silicon electronic device

Authors: Kevin S. H. Ng, Benoit Voisin, Brett C. Johnson, Jeffrey C. McCallum, Joe Salfi, Sven Rogge

Abstract: Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at the atomic scale, typical methods rely on long-ranged capacitive interactions, making this difficult. Here we probe a silicon electronic device at the atomic sca… ▽ More Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at the atomic scale, typical methods rely on long-ranged capacitive interactions, making this difficult. Here we probe a silicon electronic device at the atomic scale using a localized electronic quantum dot induced directly within the device at a desired location, using the biased tip of a low-temperature scanning tunneling microscope. We demonstrate control over short-ranged tunnel coupling interactions of the quantum dot with the device's source reservoir using sub-nm position control of the tip, and the quantum dot energy level using a voltage applied to the device's gate reservoir. Despite the $\sim 1$nm proximity of the quantum dot to the metallic tip, we find the gate provides sufficient capacitance to enable a high degree of electric control. Combined with atomic scale imaging, we use the quantum dot to probe applied electric fields and charge in individual defects in the device. This capability is expected to aid in the understanding of atomic-scale devices and the quantum states realized in them. △ Less

Submitted 28 January, 2020; originally announced January 2020.

Comments: 6 pages, 4 figures, 5 pages supplementary material

High resolution spectroscopy of individual erbium ions in strong magnetic fields

Authors: Gabriele G. de Boo, Chunming Yin, Miloš Rančić, Brett C. Johnson, Jeffrey C. McCallum, Matthew Sellars, Sven Rogge

Abstract: In this paper we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine their optical and paramagnetic properties simultaneously. We demonstrate that this high spectral resolution technique can be exploited to observe interactions typically unresolvable in silicon using conventional spectroscopy techniques due to inhomogeneous broadening. In par… ▽ More In this paper we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine their optical and paramagnetic properties simultaneously. We demonstrate that this high spectral resolution technique can be exploited to observe interactions typically unresolvable in silicon using conventional spectroscopy techniques due to inhomogeneous broadening. In particular, we resolve the Zeeman splitting of the 4I15/2 ground and 4I13/2 excited state separately and in strong magnetic fields we observe the anti-crossings between Zeeman components of different crystal field levels. We discuss the use of this electronic detection technique in identifying the symmetry and structure of erbium sites in silicon. △ Less

Submitted 12 December, 2019; originally announced December 2019.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 102, 155309 (2020)

Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare earth ion spins

Authors: Jonathan Everts, Gavin G. G. King, Nicholas Lambert, Sacha Kocsis, Sven Rogge, Jevon J. Longdell

Abstract: Quantum magnonics is a new and active research field, leveraging the strong collective coupling between microwaves and magnetically ordered spin systems. To date work in quantum magnonics has focused on transition metals and almost entirely on ferromagnetic resonances in yttrium iron garnet (YIG). Antiferromagnetic systems have gained interest as they produce no stray field, and are therefore robu… ▽ More Quantum magnonics is a new and active research field, leveraging the strong collective coupling between microwaves and magnetically ordered spin systems. To date work in quantum magnonics has focused on transition metals and almost entirely on ferromagnetic resonances in yttrium iron garnet (YIG). Antiferromagnetic systems have gained interest as they produce no stray field, and are therefore robust to magnetic perturbations and have narrow, shape independent resonant linewidths. Here we show the first experimental evidence of ultrastrong-coupling between a microwave cavity and collective antiferromagnetic resonances (magnons) in a rare earth crystal. The combination of the unique optical and spin properties of the rare earths and collective antiferromagnetic order paves the way for novel quantum magnonic applications. △ Less

Submitted 25 November, 2019; originally announced November 2019.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 101, 214414 (2020)

Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits

Authors: Zhanning Wang, Elizabeth Marcellina, A. R. Hamilton, James H. Cullen, Sven Rogge, Joe Salfi, Dimitrie Culcer

Abstract: Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is important to establish to what extent spin-orbit coupling exposes qubits to electrical noise, facilitating decoherence. Here, taking Ge as an example, we show that group IV gate-defined hole spin qubits generically exhib… ▽ More Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is important to establish to what extent spin-orbit coupling exposes qubits to electrical noise, facilitating decoherence. Here, taking Ge as an example, we show that group IV gate-defined hole spin qubits generically exhibit optimal operation points, defined by the top gate electric field, at which they are both fast and long-lived: the dephasing rate vanishes to first order in electric field noise along all directions in space, the electron dipole spin resonance strength is maximised, while relaxation is drastically reduced at small magnetic fields. The existence of optimal operation points is traced to group IV crystal symmetry and properties of the Rashba spin-orbit interaction unique to spin-3/2 systems. Our results overturn the conventional wisdom that fast operation implies reduced lifetimes, and suggest group IV hole spin qubits as ideal platforms for ultra-fast, highly coherent scalable quantum computing. △ Less

Submitted 7 April, 2021; v1 submitted 25 November, 2019; originally announced November 2019.

Comments: 32 pages, 4 figures

Journal ref: npj Quantum Information volume 7, Article number: 54 (2021)

Hole-Spin-Echo Envelope Modulations

Authors: Pericles Philippopoulos, Stefano Chesi, Joe Salfi, Sven Rogge, W. A. Coish

Abstract: Hole spins in semiconductor quantum dots or bound to acceptor impurities show promise as potential qubits, partly because of their weak and anisotropic hyperfine couplings to proximal nuclear spins. Since the hyperfine coupling is weak, it can be difficult to measure. However, an anisotropic hyperfine coupling can give rise to a substantial spin-echo envelope modulation that can be Fourier-analyze… ▽ More Hole spins in semiconductor quantum dots or bound to acceptor impurities show promise as potential qubits, partly because of their weak and anisotropic hyperfine couplings to proximal nuclear spins. Since the hyperfine coupling is weak, it can be difficult to measure. However, an anisotropic hyperfine coupling can give rise to a substantial spin-echo envelope modulation that can be Fourier-analyzed to accurately reveal the hyperfine tensor. Here, we give a general theoretical analysis for hole-spin-echo envelope modulation (HSEEM), and apply this analysis to the specific case of a boron-acceptor hole spin in silicon. For boron acceptor spins in unstrained silicon, both the hyperfine and Zeeman Hamiltonians are approximately isotropic leading to negligible envelope modulations. In contrast, in strained silicon, where light-hole spin qubits can be energetically isolated, we find the hyperfine Hamiltonian and $g$-tensor are sufficiently anisotropic to give spin-echo-envelope modulations. We show that there is an optimal magnetic-field orientation that maximizes the visibility of envelope modulations in this case. Based on microscopic estimates of the hyperfine coupling, we find that the maximum modulation depth can be substantial, reaching $\sim 10\%$, at a moderate laboratory magnetic field, $B\lesssim 200\,\mathrm{mT}$. △ Less

Submitted 3 September, 2019; v1 submitted 27 June, 2019; originally announced June 2019.

Comments: 10 pages, 1 figure; v2: minor revisions/clarifications to address referee comments

Journal ref: Phys. Rev. B 100, 125402 (2019)

Certification of spin-based quantum simulators

Authors: Abolfazl Bayat, Benoit Voisin, Gilles Buchs, Joe Salfi, Sven Rogge, Sougato Bose

Abstract: Quantum simulators are engineered devices controllably designed to emulate complex and classically intractable quantum systems. A key challenge is to certify whether the simulator truly mimics the Hamiltonian of interest. This certification step requires the comparison of a simulator's output to a known answer, which is usually limited to small systems due to the exponential scaling of the Hilbert… ▽ More Quantum simulators are engineered devices controllably designed to emulate complex and classically intractable quantum systems. A key challenge is to certify whether the simulator truly mimics the Hamiltonian of interest. This certification step requires the comparison of a simulator's output to a known answer, which is usually limited to small systems due to the exponential scaling of the Hilbert space. Here, in the context of Fermi-Hubbard spin-based analogue simulators, we propose a modular many-body spin to charge conversion scheme that scales linearly with both the system size and the number of low-energy eigenstates to discriminate. Our protocol is based on the global charge state measurement of a 1D spin chain performed at different detuning potentials along the chain. In the context of semiconductor-based systems, we identify realistic conditions for detuning the chain adiabatically in order to avoid state mixing while preserving charge coherence. Large simulators with vanishing energy gaps, including 2D arrays, can be certified block-by-block with a number of measurements scaling only linearly with the system size. △ Less

Submitted 11 June, 2020; v1 submitted 5 May, 2019; originally announced May 2019.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. A 101, 052344 (2020)

Engineering long spin coherence times of spin-orbit systems

Authors: T. Kobayashi, J. Salfi, J. van der Heijden, C. Chua, M. G. House, D. Culcer, W. D. Hutchison, B. C. Johnson, J. C. McCallum, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. Y. Simmons, S. Rogge

Abstract: Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s… ▽ More Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s) coherence times $T_2$, while qubits with long $T_2$ have weak spin-orbit coupling making qubit coupling short-ranged and challenging for scale-up. Here we show that an intrinsic spin-orbit coupled "generalised spin" with total angular momentum $J=\tfrac{3}{2}$, which is defined by holes bound to boron dopant atoms in strained $^{28}\mathrm{Si}$, has $T_2$ rivalling the electron spins of donors and quantum dots in $^{28}\mathrm{Si}$. Using pulsed electron paramagnetic resonance, we obtain $0.9~\mathrm{ms}$ Hahn-echo and $9~\mathrm{ms}$ dynamical decoupling $T_2$ times, where strain plays a key role to reduce spin-lattice relaxation and the longitudinal electric coupling responsible for decoherence induced by electric field noise. Our analysis shows that transverse electric dipole can be exploited for electric manipulation and qubit coupling while maintaining a weak longitudinal coupling, a feature of $J=\tfrac{3}{2}$ atomic systems with a strain engineered quadrupole degree of freedom. These results establish single-atom hole spins in silicon with quantised total angular momentum, not spin, as a highly coherent platform with tuneable intrinsic spin-orbit coupling advantageous to build artificial quantum systems and couple qubits over long distances. △ Less

Submitted 1 October, 2018; v1 submitted 28 September, 2018; originally announced September 2018.

Comments: 14 pages, 4 figures + 13 pages, 5 figures of Supplemental material

Journal ref: Nature Materials 20, 38-42 (2021)

Single-shot single-gate RF spin readout in silicon

Authors: P. Pakkiam, A. V. Timofeev, M. G. House, M. R. Hogg, T. Kobayashi, M. Koch, S. Rogge, M. Y. Simmons

Abstract: For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is,… ▽ More For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is, a single measurement (DiVincenzo 2000). Here we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of $82.9\%$ at a $3.3~\text{kHz}$ measurement bandwidth. We use this technique to measure a triplet $T_-$ to singlet $S_0$ relaxation time of $0.62~\text{ms}$ in precision donor quantum dots in silicon. We also show that the use of RF readout does not impact the maximum readout time at zero detuning limited by the $S_0$ to $T_-$ decay, which remained at approximately $2~\text{ms}$. This establishes single-gate sensing as a viable readout method for spin qubits. △ Less

Submitted 5 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. X 8, 041032 (2018)

Single rare-earth ions as atomic-scale probes in ultra-scaled transistors

Authors: Qi Zhang, Guangchong Hu, Gabriele G. de Boo, Milos Rancic, Brett C. Johnson, Jeffrey C. McCallum, Jiangfeng Du, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local… ▽ More Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local electric field and strain. Here we study the spectral response of single erbium ions to applied electric field and strain in a silicon ultra-scaled transistor. Stark shifts induced by both the overall electric field and the local charge environment are observed. Further, changes in strain smaller than $3\times 10^{-6}$ are detected, which is around two orders of magnitude more sensitive than the standard techniques used in the semiconductor industry. These results open new possibilities for non-destructive 3D map** of the local strain and electric field in the channel of ultra-scaled transistors, using the single erbium ions as ultra-sensitive atomic probes. △ Less

Submitted 5 March, 2018; originally announced March 2018.

Comments: 10+5 pages, 4+3 figures

Journal ref: Nano Lett. 19, 5025 (2019)

Gigahertz Single-Electron Pum** Mediated by Parasitic States

Authors: A. Rossi, J. Klochan, J. Timoshenko, F. E. Hudson, M. Möttönen, S. Rogge, A. S. Dzurak, V. Kashcheyevs, G. C. Tettamanzi

Abstract: In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approxima… ▽ More In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz, the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states, and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency dependent features in the pumped current. △ Less

Submitted 27 June, 2018; v1 submitted 2 March, 2018; originally announced March 2018.

Comments: 15 pages, 8 figures (including Supporting Information)

Journal ref: Nano Letters 18, 4141 (2018)

Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon

Authors: M. Usman, B. Voisin, J. Salfi, S. Rogge, L. C. L. Hollenberg

Abstract: Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on descriptions of central-cell-corrections, which are empirically fitted to match experimental binding energies, or other quantities associated with the global properties… ▽ More Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on descriptions of central-cell-corrections, which are empirically fitted to match experimental binding energies, or other quantities associated with the global properties of the wave function. Direct approaches to understanding such effects in donor wave functions are of great interest. Here, we apply a comprehensive atomistic theoretical framework to compute scanning tunnelling microscopy (STM) images of subsurface donor wave functions with two central-cell-correction formalisms previously employed in the literature. The comparison between central-cell models based on real-space image features and the Fourier transform profiles indicate that the central-cell effects are visible in the simulated STM images up to ten monolayers below the silicon surface. Our study motivates a future experimental investigation of the central-cell effects via STM imaging technique with potential of fine tuning theoretical models, which could play a vital role in the design of donor-based quantum systems in scalable quantum computer architectures. △ Less

Submitted 2 October, 2017; v1 submitted 29 June, 2017; originally announced June 2017.

Comments: Nanoscale 2017

Valley filtering and spatial maps of coupling between silicon donors and quantum dots

Authors: J. Salfi, B. Voisin, A. Tankasala, J. Bocquel, M. Usman, M. Y. Simmons, L. C. L. Hollenberg, R. Rahman, S. Rogge

Abstract: Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange interactions is presently the subject of important open questions. Here we investigate the influence of valleys on exchange in a coupled donor/quantum dot syste… ▽ More Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange interactions is presently the subject of important open questions. Here we investigate the influence of valleys on exchange in a coupled donor/quantum dot system, a basic building block of recently proposed schemes for robust quantum information processing. Using a scanning tunneling microscope tip to position the quantum dot with sub-nm precision, we find a near monotonic exchange characteristic where lattice-aperiodic modulations associated with valley degrees of freedom comprise less than 2~\% of exchange. From this we conclude that intravalley tunneling processes that preserve the donor's $\pm x$ and $\pm y$ valley index are filtered out of the interaction with the $\pm z$ valley quantum dot, and that the $\pm x$ and $\pm y$ intervalley processes where the electron valley index changes are weak. Complemented by tight-binding calculations of exchange versus donor depth, the demonstrated electrostatic tunability of donor/QD exchange can be used to compensate the remaining intravalley $\pm z$ oscillations to realise uniform interactions in an array of highly coherent donor spins. △ Less

Submitted 31 August, 2018; v1 submitted 28 June, 2017; originally announced June 2017.

Comments: 6 pages, 4 figures, 6 pages Supplemental Material

Journal ref: Phys. Rev. X 8, 031049 (2018)

Entanglement control and magic angles for acceptor qubits in Si

Authors: J. C. Abadillo-Uriel, Joe Salfi, Xuedong Hu, Sven Rogge, M. J. Calderón, Dimitrie Culcer

Abstract: Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrically over long distances, mechanisms identified to control two-qubit couplings do not permit single-qubit operations while two-qubit couplings are off. Here we identify a mechanism to modulate electrical coupling of spin q… ▽ More Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrically over long distances, mechanisms identified to control two-qubit couplings do not permit single-qubit operations while two-qubit couplings are off. Here we identify a mechanism to modulate electrical coupling of spin qubits that overcomes this drawback for hole spin qubits in acceptors,that is based on the electrical tuning of the direction of the spin-dependent electric dipole by a gate. In this way, inter-qubit coupling can be turned off electrically by tuning to a "magic angle" of vanishing electric dipole-dipole interactions, while retaining the ability to manipulate the individual qubits. This effect stems from the interplay of the $\rm T_d$ symmetry of the acceptor state in the Si lattice with the magnetic field orientation, and the spin-3/2 characteristic of hole systems. Magnetic field direction also allows to greatly suppress spin relaxation by phonons that limit single qubit performance, while retaining sweet spots where the qubits are insensitive to charge noise. Our findings can be directly applied to state-of-the-art acceptor based architectures, for which we propose suitable protocols to practically achieve full electrical tunability of entanglement and the realization of a decoherence-free subspace. △ Less

Submitted 20 December, 2017; v1 submitted 27 June, 2017; originally announced June 2017.

Comments: Main text (5 pages, 4 figures), Supplemental Materials (8 pages, 2 figures), 2 ancillary files (.mov). Revised version

Journal ref: Appl. Phys. Lett. 113, 012102 (2018)

Two-electron states of a group V donor in silicon from atomistic full configuration interaction

Authors: Archana Tankasala, Joseph Salfi, Juanita Bocquel, Benoit Voisin, Muhammad Usman, Gerhard Klimeck, Michelle Y. Simmons, Lloyd C. L. Hollenberg, Sven Rogge, Rajib Rahman

Abstract: Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight-binding basis to capture multi-electron exchange and correlation effects taking into account the full bandstructure of silicon and the atomic scale granularity of a nanoscale device. Excited $s$-like states of $A_1$-sym… ▽ More Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight-binding basis to capture multi-electron exchange and correlation effects taking into account the full bandstructure of silicon and the atomic scale granularity of a nanoscale device. Excited $s$-like states of $A_1$-symmetry are found to strongly influence the charging energy of a negative donor centre. We apply the technique on sub-surface dopants subjected to gate electric fields, and show that bound triplet states appear in the spectrum as a result of decreased charging energy. The exchange energy, obtained for the two-electron states in various confinement regimes, may enable engineering electrical control of spins in donor-dot hybrid qubits. △ Less

Submitted 12 March, 2017; originally announced March 2017.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 97, 195301 (2018)

Spin-orbit dynamics of single acceptor atoms in silicon

Authors: J. van der Heijden, T. Kobayashi, M. G. House, J. Salfi, S. Barraud, R. Lavieville, M. Y. Simmons, S. Rogge

Abstract: Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information technologies. In silicon, a strong spin-orbit coupling exists within the spin-3/2 system of acceptor atoms and their energy levels and properties are expected to be hi… ▽ More Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information technologies. In silicon, a strong spin-orbit coupling exists within the spin-3/2 system of acceptor atoms and their energy levels and properties are expected to be highly tunable. Here we show the influence of local symmetry tuning on the acceptor spin-dynamics, measured in the single-atom regime. Spin-selective tunneling between two coupled boron atoms in a commercial CMOS transistor is utilised for spin-readout, which allows for the probing of the two-hole spin relaxation mechanisms. A relaxation-hotspot is measured and explained by the mixing of acceptor heavy and light hole states. Furthermore, excited state spectroscopy indicates a magnetic field controlled rotation of the quantization axes of the atoms. These observations demonstrate the tunability of the spin-orbit states and dynamics of this spin-3/2 system. △ Less

Submitted 9 March, 2017; originally announced March 2017.

Comments: 7 pages, 4 figures. Supplementary information: 6 pages, 5 figures

Journal ref: Science Advances 4, eaat9199 (2018)

Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies

Authors: Giuseppe Carlo Tettamanzi, Samuel James Hile, Matthew Gregory House, Martin Fuechsle, Sven Rogge, Michelle Y. Simmons

Abstract: The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to $\approx$ 13 GHz to heavily phosphorous doped… ▽ More The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to $\approx$ 13 GHz to heavily phosphorous doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one dimensional leads. Our pulse spectroscopy experiments confirm the presence of an excited state at an energy $\approx$ 9 meV consistent with the first excited state of a single $P$ donor in silicon. The relaxation rate of this first excited state to ground is estimated to be larger than 2.5 GHz, consistent with theoretical predictions. These results represent a systematic investigation of how an atomically precise single atom transistor device behaves under rf excitations. △ Less

Submitted 27 February, 2017; originally announced February 2017.

Comments: 21 pages and 6 figures including an addendum/corrigendum section DOI: 10.1021/acsnano.6b08154

Journal ref: ACS NANO 2017

Linear and planar molecules formed by coupled P donors in silicon

Authors: M. V. Klymenko, S. Rogge, F. Remacle

Abstract: Using the effective mass theory and the multi-valley envelope function representation, we have developed a theoretical framework for computing the single-electron electronic structure of several phosphorus donors interacting in an arbitrary geometrical configuration in silicon taking into account the valley-orbit coupling. The methodology is applied to three coupled phosphorus donors, arranged in… ▽ More Using the effective mass theory and the multi-valley envelope function representation, we have developed a theoretical framework for computing the single-electron electronic structure of several phosphorus donors interacting in an arbitrary geometrical configuration in silicon taking into account the valley-orbit coupling. The methodology is applied to three coupled phosphorus donors, arranged in a linear chain and in a triangle, and to six donors arranged in a regular hexagon. The results of the simulations evidence that the valley composition of the single-electron states strongly depends on the geometry of the dopant molecule and its orientation relative to the crystallographic axes of silicon. The electron binding energy of the triatomic linear molecules is larger than that of the diatomic molecule oriented along the same crystallographic axis, but the energy gap between the ground state and the first excited state is not significantly different for internuclear distances from 1.5 to 6.6 nm. Three donor atoms arranged in a triangle geometry have larger binding energies than a triatomic linear chain of dopants with the same internuclear distances. The planar donor molecules are characterized by a strong polarization in favor of the valleys oriented perpendicular to the plane of the molecule. The polarization increases with number of atoms forming the planar molecule. △ Less

Submitted 22 November, 2016; originally announced November 2016.

Journal ref: Phys. Rev. B 95, 205301 (2017)

Multi-valley envelope function equations and effective potentials for P impurity in silicon

Authors: M. V. Klymenko, S. Rogge, F. Remacle

Abstract: We propose a system of real-space envelope function equations without fitting parameters for modeling the electronic spectrum and wave functions of a phosphorus donor atom embedded in silicon. The approach relies on the Burt-Foreman envelope function representation and leads to coupled effective-mass Schroedinger equations containing smooth effective potentials. These potentials result from the sp… ▽ More We propose a system of real-space envelope function equations without fitting parameters for modeling the electronic spectrum and wave functions of a phosphorus donor atom embedded in silicon. The approach relies on the Burt-Foreman envelope function representation and leads to coupled effective-mass Schroedinger equations containing smooth effective potentials. These potentials result from the spatial filtering imposed on the exact potential energy matrix elements in the envelope function representation. The corresponding filter function is determined from the definition of the envelope function. The resulting effective potentials and the system of envelope functions jointly reproduce the valley-orbit coupling effect in the doped silicon. Including the valley-orbit coupling not only of the 1s, but also for 2s atomic orbitals, as well as static dielectric screening is found crucial to accurately reproduce experimental data. The measured binding energies are recovered with a maximum relative error of 1.53 %. The computed wave functions are in a good agreement with experimental measurements of the electron density provided by scanning tunneling microscopy. △ Less

Submitted 17 November, 2016; originally announced November 2016.

Journal ref: Phys. Rev. B 92, 195302 (2015)

Dynamics of a single-atom electron pump

Authors: J. van der Heijden, G. C. Tettamanzi, S. Rogge

Abstract: Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electron state with a large charging energy and considerable orbital level spacings, enabling robust charge capturing processes. In these single-atom pumps, the confinement potential is hardly affected by the periodic driving o… ▽ More Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electron state with a large charging energy and considerable orbital level spacings, enabling robust charge capturing processes. In these single-atom pumps, the confinement potential is hardly affected by the periodic driving of the system. This is in contrast to the often used gate-defined quantum dot pumps, for which a strongly time-dependent potential leads to significantly different charge pum** processes. Here we describe the behaviour and the performance of an atomic, single parameter, electron pump. This is done by considering the loading, isolating and unloading of one electron at the time, on a phosphorous atom embedded in a silicon double gate transistor. The most important feature of the atom pump is its very isolated ground state, which can be populated through the fast loading of much higher lying excited states and a subsequent fast relaxation proces. This leads to a substantial increase in pum** accuracy, and is opposed to the adverse role of excited states as observed for quantum dot pumps due to non-adiabatic excitations. The pum** performances are investigated as a function of dopant position, revealing a pum** behaviour robust against the expected variability in atomic position. △ Less

Submitted 29 July, 2016; originally announced July 2016.

Comments: 8 pages, 5 figures

Journal ref: Scientific Reports 7, 44371 (2017)

Quantum Computing with Acceptor Spins in Silicon

Authors: Joe Salfi, Mengyang Tong, Sven Rogge, Dimitrie Culcer

Abstract: The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be designed. Whereas a light-hole spin qubit was introduced recently [Phys. Rev. Lett. 116, 246801 (2016)], here we present analytical and numerical results pr… ▽ More The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be designed. Whereas a light-hole spin qubit was introduced recently [Phys. Rev. Lett. 116, 246801 (2016)], here we present analytical and numerical results proving that a heavy-hole spin qubit can be reliably initialised, rotated and entangled by electrical means alone. This is due to strong Rashba-like spin-orbit interaction terms enabled by the interface inversion asymmetry. Single qubit rotations rely on electric-dipole spin resonance (EDSR), which is strongly enhanced by interface-induced spin-orbit terms. Entanglement can be accomplished by Coulomb exchange, coupling to a resonator, or spin-orbit induced dipole-dipole interactions. By analysing the qubit sensitivity to charge noise, we demonstrate that interface-induced spin-orbit terms are responsible for sweet spots in the dephasing time T2* as a function of the top gate electric field, which are close to maxima in the EDSR strength, where the EDSR gate has high fidelity. We show that both qubits can be described using the same starting Hamiltonian, and by comparing their properties we show that the complex interplay of bulk and interface-induced spin-orbit terms allows a high degree of electrical control and makes acceptors potential candidates for scalable quantum computation in Si. △ Less

Submitted 15 June, 2016; originally announced June 2016.

Journal ref: Nanotechnology 27, 244001 (2016)

Superadiabatic quantum state transfer in spin chains

Authors: Ricardo Agundez, Charles D. Hill, Lloyd C. L. Hollenberg, Sven Rogge, Miriam Blaauboer

Abstract: In this letter we propose a superadiabatic protocol where quantum state transfer can be achieved with arbitrarily high accuracy and minimal control across long spin chains with an odd number of spins. The quantum state transfer protocol only requires the control of the couplings between the qubits on the edge and the spin chain. We predict fidelities above 0.99 for an evolution of nanoseconds usin… ▽ More In this letter we propose a superadiabatic protocol where quantum state transfer can be achieved with arbitrarily high accuracy and minimal control across long spin chains with an odd number of spins. The quantum state transfer protocol only requires the control of the couplings between the qubits on the edge and the spin chain. We predict fidelities above 0.99 for an evolution of nanoseconds using typical spin exchange coupling values of μeV. Furthermore, by building a superadiabatic formalism on top of this protocol, we propose a effective superadiabatic protocol that retains the minimal control over the spin chain and improves the fidelity by up to 20%. △ Less

Submitted 12 January, 2017; v1 submitted 17 April, 2016; originally announced April 2016.

Comments: Final accepted version

Journal ref: Phys. Rev. A 95, 012317 (2017)

Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot

Authors: T. Kobayashi, J. van der Heijden, M. G. House, S. J. Hile, Pablo Asshoff, M. F. Gonzalez-Zalba, M. Vinet, M. Y. Simmons, S. Rogge

Abstract: We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley spl… ▽ More We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160-240 ueV with an electric field dependence 1.2 +- 0.2 meV/(MV/m). A large valley splitting is an essential requirement to implement a physical electron spin qubit in a silicon quantum dot. △ Less

Submitted 13 April, 2016; originally announced April 2016.

Comments: 10 pages, 3 figures

Journal ref: Appl. Phys. Lett. 108, 152102 (2016)

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

Authors: Muhammad Usman, Juanita Bocquel, Joe Salfi, Benoit Voisin, Archana Tankasala, Rajib Rahman, Michelle Y. Simmons, Sven Rogge, Lloyd L. C. Hollenberg

Abstract: The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel do** in ultra-scaled transistors to quantum inf… ▽ More The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel do** in ultra-scaled transistors to quantum information processing, and hence poses a significant challenge. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pin-point the exact lattice-site location of sub-surface dopants in silicon. The technique is underpinned by the observation that STM images of sub surface dopants typically contain many atomic-sized features in ordered patterns, which are highly sensitive to the details of the STM tip orbital and the absolute lattice-site position of the dopant atom itself. We demonstrate the technique on two types of dopant samples in silicon -- the first where phosphorus dopants are placed with high precision, and a second containing randomly placed arsenic dopants. Based on the quantitative agreement between STM measurements and multi-million-atom calculations, the precise lattice site of these dopants is determined, demonstrating that the metrology works to depths of about 36 lattice planes. The ability to uniquely determine the exact positions of sub-surface dopants down to depths of 5 nm will provide critical knowledge in the design and optimisation of nanoscale devices for both classical and quantum computing applications. △ Less

Submitted 11 January, 2016; originally announced January 2016.

Journal ref: Nature Nanotechnology 11, 763 (2016)

Bulk and sub-surface donor bound excitons in silicon under electric fields

Authors: Rajib Rahman, Jan Verduijn, Yu Wang, Chunming Yin, Gabriele De Boo, Gerhard Klimeck, Sven Rogge

Abstract: The electronic structure of the three-particle donor bound exciton (D$^0$X) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approximation. The calculations yield a transition energy close to the experimentally measured value of 1150 meV in bulk, and show how the transition energy and transition probability can change with applied fields and proximi… ▽ More The electronic structure of the three-particle donor bound exciton (D$^0$X) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approximation. The calculations yield a transition energy close to the experimentally measured value of 1150 meV in bulk, and show how the transition energy and transition probability can change with applied fields and proximity to surfaces, mimicking the conditions of realistic devices. The spin-resolved transition energy from a neutral donor state (D$^0$) to D$^0$X depends on the three-particle Coulomb energy, and the interface and electric field induced hyperfine splitting and heavy-hole-light-hole splitting. Although the Coulomb energy decreases as a result of Stark shift, the spatial separation of the electron and hole wavefunctions by the field also reduces the transition dipole. A bulk-like D$^0$X dissociates abruptly at a modest electric field, while a D$^0$X at a donor close to an interface undergoes a gradual ionization process. Our calculations take into account the full bandstructure of silicon and the full energy spectrum of the donor including spin directly in the atomic orbital basis and treat the three-particle Coulomb interaction self-consistently to provide quantitative guidance to experiments aiming to realize hybrid opto-electric techniques for addressing donor qubits. △ Less

Submitted 30 September, 2015; originally announced October 2015.

Radio frequency reflectometry and charge sensing of a precision placed donor in silicon

Authors: Samuel J. Hile, Matthew G. House, Eldad Peretz, Jan Verduijn, Daniel Widmann, Takashi Kobayashi, Sven Rogge, Michelle Y. Simmons

Abstract: We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected RF excitation from the reservoir, we can discriminate bet… ▽ More We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected RF excitation from the reservoir, we can discriminate between charge transfer within the SET channel and tunneling between the donor and reservoir. The RF measurement allows observation of donor electron transitions at every charge degeneracy point in contrast to the SET conductance signal where charge transitions are only observed at triple points. The tunnel coupled reservoir has the advantage of a large effective lever arm (~35%) allowing us to independently extract a neutral donor charging energy ~62 +/- 17meV. These results demonstrate that we can replace three terminal transistors by a single terminal dispersive reservoir, promising for high bandwidth scalable donor control and readout. △ Less

Submitted 10 September, 2015; originally announced September 2015.

Comments: 5 pages, 3 figures. Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Journal ref: Appl. Phys. Lett. 107, 093504 (2015)

Charge-insensitive single-atom spin-orbit qubit in silicon

Authors: J. Salfi, J. A. Mol, Dimitrie Culcer, S. Rogge

Abstract: High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here we propose an acceptor-based spin-orbit qubit in silicon… ▽ More High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave photons, or phonons. However, SOC exposes conventional spin qubits to decoherence from electrical noise. Here we propose an acceptor-based spin-orbit qubit in silicon offering long-range entanglement at a sweet spot where the qubit is protected from electrical noise. The qubit relies on quadrupolar SOC with the interface and gate potentials. As required for surface codes, $10^5$ electrically mediated single-qubit and $10^4$ dipole-dipole mediated two-qubit gates are possible in the predicted spin lifetime. Moreover, circuit quantum electrodynamics with single spins is feasible, including dispersive readout, cavity-mediated entanglement, and spin-photon entanglement. An industrially relevant silicon-based platform is employed. △ Less

Submitted 5 January, 2017; v1 submitted 18 August, 2015; originally announced August 2015.

Comments: 4 pages, 2 figures

Journal ref: Phys. Rev. Lett. 116, 246801 (2016)

Donor Wavefunctions in Si Gauged by STM Images

Authors: A. L. Saraiva, J. Salfi, J. Bocquel, B. Voisin, S. Rogge, Rodrigo B. Capaz, M. J. Calderón, Belita Koiller

Abstract: The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, revealing localized patterns of resonantly enhanced tunneling currents. We show that the shape of the conducting splotches resemble a cut through Kohn-L… ▽ More The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, revealing localized patterns of resonantly enhanced tunneling currents. We show that the shape of the conducting splotches resemble a cut through Kohn-Luttinger (KL) hydrogenic envelopes, which modulate the interfering Bloch states of conduction electrons. All the non-monotonic features of the current profile are consistent with the charge density fluctuations observed between successive {001} atomic planes, including a counterintuitive reduction of the symmetry - a heritage of the lowered point group symmetry at these planes. A model-independent analysis of the diffraction figure constrains the value of the electron wavevector to $k_0 = (0.82 \pm 0.03)(2π/a_{Si})$. Unlike prior measurements, averaged over a sizeable density of electrons, this estimate is obtained directly from isolated electrons. We further investigate the model-specific anisotropy of the wave function envelope, related to the effective mass anisotropy. This anisotropy appears in the KL variational wave function envelope as the ratio between Bohr radii b=a. We demonstrate that the central cell corrected estimates for this ratio are encouragingly accurate, leading to the conclusion that the KL theory is a valid model not only for energies but for wavefunctions as well. △ Less

Submitted 11 August, 2015; originally announced August 2015.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. B 93, 045303 (2016)

Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon

Authors: J. Salfi, J. A. Mol, R. Rahman, G. Klimeck, M. Y. Simmons, L. C. L. Hollenberg, S. Rogge

Abstract: In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements… ▽ More In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasiparticle tunneling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing covalent bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model. △ Less

Submitted 25 April, 2016; v1 submitted 22 July, 2015; originally announced July 2015.

Comments: 6 pages, 5 figures. Supplementary: 13 pages, 7 figures. New version with some additional discussion, accepted in Nature Communications

Journal ref: Nature Communications 7, 11342 (2016)

A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures

Authors: Wendy E. Purches, Alessandro Rossi, Ruichen Zhao, Sergey Kafanov, Timothy L. Duty, Andrew S. Dzurak, Sven Rogge, Giuseppe C. Tettamanzi

Abstract: Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and cha… ▽ More Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology. △ Less

Submitted 9 August, 2015; v1 submitted 3 June, 2015; originally announced June 2015.

Comments: 6 pages, 4 figures, minor changes from the previous version 1

Journal ref: Applied Physics Letters, 107 (2015), Issue 6, pp 063503

Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon

Authors: Muhammad Usman, Charles D. Hill, Rajib Rahman, Gerhard Klimeck, Michelle Y. Simmons, Sven Rogge, Lloyd C. L. Hollenberg

Abstract: Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and non-static screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fie… ▽ More Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and non-static screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fields in realistically sized devices. We establish and apply a theoretical framework, based on atomistic tight-binding theory, to quantitatively determine the strain and electric field dependent hyperfine couplings of donors. Our method is scalable to millions of atoms, and yet captures the strain effects with an accuracy level of DFT method. Excellent agreement with the available experimental data sets allow reliable investigation of the design space of multi-qubit architectures, based on both strain-only as well as hybrid (strain+field) control of qubits. The benefits of strain are uncovered by demonstrating that a hybrid control of qubits based on (001) compressive strain and in-plane (100 or 010) fields results in higher gate fidelities and/or faster gate operations, for all of the four donor species considered (P, As, Sb, and Bi). The comparison between different donor species in strained environments further highlights the trends of hyperfine shifts, providing predictions where no experimental data exists. Whilst faster gate operations are realisable with in-plane fields for P, As, and Sb donors, only for the Bi donor, our calculations predict faster gate response in the presence of both in-plane and out-of-plane fields, truly benefiting from the proposed planar field control mechanism of the hyperfine interactions. △ Less

Submitted 23 April, 2015; originally announced April 2015.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. B 91, 245209, 2015

Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

Authors: M. Urdampilleta, A. Chatterjee, C. C. Lo, T. Kobayashi, J. Mansir, S. Barraud, A. C. Betz, S. Rogge, M. F. Gonzalez-Zalba, J. J. L. Morton

Abstract: Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfin… ▽ More Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus. △ Less

Submitted 19 March, 2015; v1 submitted 3 March, 2015; originally announced March 2015.

Comments: 6 pages, 4 figures, supplementary information (3 pages, 4 figures)

Journal ref: Phys. Rev. X 5, 031024 (2015)

Interface-induced heavy-hole/light-hole splitting of acceptors in silicon

Authors: J. A. Mol, J. Salfi, R. Rahman, Y. Hsueh, J. A. Miwa, G. Klimeck, M. Y. Simmons, S. Rogge

Abstract: The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra show two resonances which we ascribe to the heavy- and light-hole Kramers doublets. This type of broken degeneracy has recently been argued to be advantageous… ▽ More The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra show two resonances which we ascribe to the heavy- and light-hole Kramers doublets. This type of broken degeneracy has recently been argued to be advantageous for the lifetime of acceptor-based qubits [Phys. Rev. B 88 064308 (2013)]. The depth dependent energy splitting between the heavy- and light-hole Kramers doublets is consistent with tight binding calculations, and is in excess of 1 meV for all acceptors within the experimentally accessible depth range (< 2 nm from the surface). These results will aid the development of tunable acceptor-based qubits in silicon with long coherence times and the possibility for electrical manipulation. △ Less

Submitted 22 January, 2015; originally announced January 2015.