-
Low voltage local strain enhanced switching of magnetic tunnel junctions
Authors:
Suyogya Karki,
Jaesuk Kwon,
Joe Davies,
Raisa Fabiha,
Vivian Rogers,
Thomas Leonard,
Supriyo Bandyopadhyay,
Jean Anne C. Incorvia
Abstract:
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an additional way to tune MTJ properties for these applications. State-of-the-art CoFeB-MgO based MTJs still require too high voltages to alter their magnetic switching b…
▽ More
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an additional way to tune MTJ properties for these applications. State-of-the-art CoFeB-MgO based MTJs still require too high voltages to alter their magnetic switching behavior with strain. In this study, we demonstrate strain-enhanced field switching of nanoscale MTJs through electric field control via voltage applied across local gates. The results show that record-low voltage down to 200 mV can be used to control the switching field of the MTJ through enhancing the magnetic anisotropy, and that tunnel magnetoresistance is linearly enhanced with voltage through straining the crystal structure of the tunnel barrier. These findings underscore the potential of electric field manipulation and strain engineering as effective strategies for tailoring the properties and functionality of nanoscale MTJs.
△ Less
Submitted 8 December, 2023; v1 submitted 15 November, 2023;
originally announced November 2023.
-
Flat bands and multi-state memory devices from chiral domain wall superlattices in magnetic Weyl semimetals
Authors:
Vivian Rogers,
Swati Chaudhary,
Richard Nguyen,
Jean Anne Incorvia
Abstract:
We propose a novel analog memory device utilizing the gigantic magnetic Weyl semimetal (MWSM) domain wall (DW) magnetoresistance. We predict that the nucleation of domain walls between contacts will strongly modulate the conductance and allow for multiple memory states, which has been long sought-after for use in magnetic random access memories or memristive neuromorphic computing platforms. We mo…
▽ More
We propose a novel analog memory device utilizing the gigantic magnetic Weyl semimetal (MWSM) domain wall (DW) magnetoresistance. We predict that the nucleation of domain walls between contacts will strongly modulate the conductance and allow for multiple memory states, which has been long sought-after for use in magnetic random access memories or memristive neuromorphic computing platforms. We motivate this conductance modulation by analyzing the electronic structure of the helically-magnetized MWSM Hamiltonian, and report tunable flat bands in the direction of transport in a helically-magnetized region of the sample for Bloch and Neel-type domain walls via the onset of a local axial Landau level spectrum within the bulk of the superlattice. We show that Bloch devices also provide means for the generation of chirality-polarized currents, which provides a path towards nanoelectronic utilization of chirality as a new degree of freedom in spintronics.
△ Less
Submitted 23 October, 2023; v1 submitted 29 March, 2023;
originally announced March 2023.
-
Tunnel magnetoresistance in scandium nitride magnetic tunnel junctions using first principles
Authors:
Suyogya Karki,
Vivian Rogers,
Priyamvada Jadaun,
Daniel S. Marshall,
Jean Anne C. Incorvia
Abstract:
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the tunnel barrier between magnetic electrodes, providing a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment…
▽ More
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the tunnel barrier between magnetic electrodes, providing a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide-iron systems increases the resistance-area product and causes challenges of device-to-device variability and tunnel barrier degradation under high current. Here, we study using first principles narrower-bandgap scandium nitride tunneling properties and transport in magnetic tunnel junctions in comparison to magnesium oxide. These simulations demonstrate a high tunnel magnetoresistance in Fe/ScN/Fe MTJs via Δ_1 and Δ_2' symmetry filtering with low wavefunction decay rates, allowing a low resistance-area product. The results show that scandium nitride could be a new tunnel barrier material for magnetic tunnel junction devices to overcome variability and current-injection challenges.
△ Less
Submitted 28 August, 2020;
originally announced August 2020.
