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The physical origin of aneurysm growth, dissection, and rupture
Authors:
Tom Y. Zhao,
**-Tae Kim,
Min Cho,
Akhil Narang,
John A. Rogers,
Neelesh A. Patankar
Abstract:
Rupture of aortic aneurysms is by far the most fatal heart disease, with a mortality rate exceeding 80%. There are no reliable clinical protocols to predict growth, dissection, and rupture because the fundamental physics driving aneurysm progression is unknown. Here, via in-vitro experiments, we show that a blood-wall, fluttering instability manifests in synthetic arteries under pulsatile forcing.…
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Rupture of aortic aneurysms is by far the most fatal heart disease, with a mortality rate exceeding 80%. There are no reliable clinical protocols to predict growth, dissection, and rupture because the fundamental physics driving aneurysm progression is unknown. Here, via in-vitro experiments, we show that a blood-wall, fluttering instability manifests in synthetic arteries under pulsatile forcing. We establish a phase space to prove that the transition from stable flow to unstable aortic flutter is accurately predicted by a flutter instability parameter derived from first principles. Time resolved strain maps of the evolving system reveal the dynamical characteristics of aortic flutter that drive aneurysm progression. We show that low level instability can trigger permanent aortic growth, even in the absence of material remodeling. Sufficiently large flutter beyond a secondary threshold localizes strain in the walls to the length scale clinically observed in aortic dissection. Lastly, significant physical flutter beyond a tertiary threshold can ultimately induce aneurysm rupture via failure modes reported from necropsy. Resolving the fundamental physics of aneurysm progression directly leads to clinical protocols that forecast growth as well as intercept dissection and rupture by pinpointing their physical origin.
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Submitted 1 November, 2023;
originally announced November 2023.
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A dynamically reprogrammable metasurface with self-evolving shape morphing
Authors:
Yun Bai,
Heling Wang,
Yeguang Xue,
Yuxin Pan,
**-Tae Kim,
Xinchen Ni,
Tzu-Li Liu,
Yiyuan Yang,
Mengdi Han,
Yonggang Huang,
John A. Rogers,
Xiaoyue Ni
Abstract:
Dynamic shape-morphing soft materials systems are ubiquitous in living organisms; they are also of rapidly increasing relevance to emerging technologies in soft machines, flexible electronics, and smart medicines. Soft matter equipped with responsive components can switch between designed shapes or structures, but cannot support the types of dynamic morphing capabilities needed to reproduce natura…
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Dynamic shape-morphing soft materials systems are ubiquitous in living organisms; they are also of rapidly increasing relevance to emerging technologies in soft machines, flexible electronics, and smart medicines. Soft matter equipped with responsive components can switch between designed shapes or structures, but cannot support the types of dynamic morphing capabilities needed to reproduce natural, continuous processes of interest for many applications. Challenges lie in the development of schemes to reprogram target shapes post fabrication, especially when complexities associated with the operating physics and disturbances from the environment can prohibit the use of deterministic theoretical models to guide inverse design and control strategies. Here, we present a mechanical metasurface constructed from a matrix of filamentary metal traces, driven by reprogrammable, distributed Lorentz forces that follow from passage of electrical currents in the presence of a static magnetic field. The resulting system demonstrates complex, dynamic morphing capabilities with response times within 0.1 s. Implementing an in-situ stereo-imaging feedback strategy with a digitally controlled actuation scheme guided by an optimization algorithm, yields surfaces that can self-evolve into a wide range of 3-dimensional (3D) target shapes with high precision, including an ability to morph against extrinsic or intrinsic perturbations. These concepts support a data-driven approach to the design of dynamic, soft matter, with many unique characteristics.
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Submitted 8 December, 2021;
originally announced December 2021.
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High Performance Piezoelectric Devices Based on Aligned Arrays of Nanofibers of Poly[(vinylidenefluoride-co-trifluoroethylene]
Authors:
Luana Persano,
Canan Dagdeviren,
Yewang Su,
Yihui Zhang,
Salvatore Girardo,
Dario Pisignano,
Yonggang Huang,
John A. Rogers
Abstract:
Multifunctional capability, flexible design, rugged lightweight construction, and self-powered operation are desired attributes for electronics that directly interface with the human body or with advanced robotic systems. For these and related applications, piezoelectric materials, in forms that offer the ability to bend and stretch, are attractive for pressure/force sensors and mechanical energy…
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Multifunctional capability, flexible design, rugged lightweight construction, and self-powered operation are desired attributes for electronics that directly interface with the human body or with advanced robotic systems. For these and related applications, piezoelectric materials, in forms that offer the ability to bend and stretch, are attractive for pressure/force sensors and mechanical energy harvesters. In this paper we introduce a large area, flexible piezoelectric material that consists of sheets of electrospun fibers of the polymer poly[(vinylidenefluoride-co-trifluoroethylene]. The flow and mechanical conditions associated with the spinning process yield free-standing, three-dimensional architectures of aligned arrangements of such fibers, in which the polymer chains adopt strongly preferential orientations. The resulting material offers exceptional piezoelectric characteristics, to enable, as an example, ultra-high sensitivity for measuring pressure, even at exceptionally small values (0.1 Pa). Quantitative analysis provides detailed insights into the pressure sensing mechanisms, and engineering design rules. Applications range from self-powered micro-mechanical elements, to self-balancing robots and sensitive impact detectors.
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Submitted 27 September, 2013;
originally announced September 2013.
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Theoretical and Experimental Studies of Schottky Diodes That Use Aligned Arrays of Single Walled Carbon Nanotubes
Authors:
Xinning Ho,
Lina Ye,
Slava V. Rotkin,
Xu Xie,
Frank Du,
Simon Dunham,
Jana Zaumseil,
John A. Rogers
Abstract:
We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due t…
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We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due to the presence of m-SWNT shunts. These tubes can be eliminated in a single voltage sweep resulting in a high rectification array device. Further analysis also shows that the channel resistance, and not the intrinsic nanotube diode properties, limits the rectification in devices with channel length up to ten micrometer.
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Submitted 5 May, 2010;
originally announced May 2010.
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Gate Capacitance Coupling of Singled-walled Carbon Nanotube Thin-film Transistors
Authors:
Qing Cao,
Minggang Xia,
Coskun Kocabas,
Moonsub Shim,
John A. Rogers,
Slava V. Rotkin
Abstract:
The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some…
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The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some dependence on the distribution of these spacings. Experiments on transistors that use sub-monolayer, random networks of SWNTs verify certain aspects of these calculations. The results are important for the development of networks or arrays of nanotubes as active layers in TFTs and other electronic devices.
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Submitted 6 December, 2006; v1 submitted 30 November, 2006;
originally announced December 2006.
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Hall effect in the accumulation layers on the surface of organic semiconductors
Authors:
V. Podzorov,
E. Menard,
J. A. Rogers,
M. E. Gershenson
Abstract:
We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measureme…
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We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, n_H, coincides with the density n calculated using the gate-channel capacitance, and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive band-like motion of field-induced charge carriers between the trap** events.
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Submitted 29 July, 2005;
originally announced August 2005.
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Interaction of Organic Surfaces with Active Species in the High-Vacuum Environment
Authors:
V. Podzorov,
E. Menard,
S. Pereversev,
B. Yakshinsky,
T. Madey,
J. A. Rogers,
M. E. Gershenson
Abstract:
Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source-drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect…
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Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source-drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect to interaction of the organic surface with electrically neutral free radicals produced in the process of hydrocarbon cracking on hot filaments with a relatively low activation energy Ea ~ 2.5 eV (240 kJ/mol). The reported results might be important for optimizing the high-vacuum processes of fabrication and characterization of a wide range of organic and molecular electronic devices.
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Submitted 15 May, 2005;
originally announced May 2005.
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Intrinsic charge transport on the surface of organic semiconductors
Authors:
V. Podzorov,
E. Menard,
A. Borissov,
V. Kiryukhin,
J. A. Rogers,
M. E. Gershenson
Abstract:
The novel technique based on air-gap transistor stamps enabled realization of the intrinsic (not dominated by static disorder) transport of the electric-field-induced charge carriers on the surface of rubrene crystals over a wide temperature range. The signatures of the intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. The anisotropy of mu van…
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The novel technique based on air-gap transistor stamps enabled realization of the intrinsic (not dominated by static disorder) transport of the electric-field-induced charge carriers on the surface of rubrene crystals over a wide temperature range. The signatures of the intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. The anisotropy of mu vanishes in the activation regime at lower temperatures, where the charge transport becomes dominated by shallow traps. The deep traps, deliberately introduced into the crystal by X-ray radiation, increase the field-effect threshold without affecting the mobility. These traps filled above the field-effect threshold do not scatter the mobile polaronic carriers.
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Submitted 23 March, 2004;
originally announced March 2004.
