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Long-Term Stability of Graphene/c-Si Schottky-Junction Solar Cells
Authors:
Djordje Jovanović,
Miloš Petrović,
Tijana Tomašević-Ilić,
Aleksandar Matković,
Matevž Bokalič,
Marko Spasenović,
Konstantinos Rogdakis,
Emmannuel Kymakis,
Dragan Knežević,
Lucio Cinà,
Radoš Gajić
Abstract:
A long operational lifetime is required for the use of solar cells in real-life photovoltaic applications. The optimization of operational lifetimes is achieved through understanding the inherent degradation phenomena in solar cells. In this study, graphene/Si Schottky-junction solar cells were produced, utilizing liquid-phase-exfoliated graphene as an active surface. The operational and interface…
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A long operational lifetime is required for the use of solar cells in real-life photovoltaic applications. The optimization of operational lifetimes is achieved through understanding the inherent degradation phenomena in solar cells. In this study, graphene/Si Schottky-junction solar cells were produced, utilizing liquid-phase-exfoliated graphene as an active surface. The operational and interface stability of these solar cells over a period of 5 years in ambient conditions (following ISOS-D protocols: dark storage/shelf life) was examined, and the origin of their degradation was reported. It was found that the dominant degradation mechanism could be attributed to the degradation of silver contacts. This was indicated by a decrease in shunt resistance, an increase in the ideality factor (due to a higher carrier recombination), and a constant defect density in graphene films for up to 4 years. Measurements across the solar cell's active area during the 5-year period revealed neither significant spatial inhomogeneity, nor shunt channel defects.
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Submitted 15 June, 2023;
originally announced June 2023.
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In-flight detection of few electrons using a singlet-triplet spin qubit
Authors:
Vivien Thiney,
Pierre-André Mortemousque,
Konstantinos Rogdakis,
Romain Thalineau,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Christopher Bäuerle,
Tristan Meunier
Abstract:
We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measurement. This experiment demonstrates that the spin qubi…
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We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measurement. This experiment demonstrates that the spin qubit is an ultrasensitive and fast charge detector with the perspective of a future single shot-detection of a single flying electron. This work opens the route toward quantum electron optics experiments at the single electron level in semiconductor circuits.
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Submitted 22 November, 2022; v1 submitted 17 October, 2022;
originally announced October 2022.
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Growth, strain and spin orbit torques in epitaxial NiMnSb films sputtered on GaAs
Authors:
N. Zhao,
A. Sud,
H. Sukegawa,
S. Komori,
K. Rogdakis,
K. Yamanoi,
J. Patchett,
J. W. A. Robinson,
C. Ciccarelli,
H. Kurebayashi
Abstract:
We report current-induced spin torques in epitaxial NiMnSb films on a commercially available epi-ready GaAs substrate. The NiMnSb was grown by co-sputtering from three targets using optimised parameter. The films were processed into micro-scale bars to perform current-induced spin-torque measurements. Magnetic dynamics were excited by microwave currents and electric voltages along the bars were me…
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We report current-induced spin torques in epitaxial NiMnSb films on a commercially available epi-ready GaAs substrate. The NiMnSb was grown by co-sputtering from three targets using optimised parameter. The films were processed into micro-scale bars to perform current-induced spin-torque measurements. Magnetic dynamics were excited by microwave currents and electric voltages along the bars were measured to analyse the symmetry of the current-induced torques. We found that the extracted symmetry of the spin torques matches those expected from spin-orbit interaction in a tetragonally distorted half-Heusler crystal. Both field-like and dam**-like torques are observed in all the samples characterised, and the efficiency of the current-induced torques is comparable to that of ferromagnetic metal/heavy metal bilayers.
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Submitted 19 January, 2021; v1 submitted 4 December, 2020;
originally announced December 2020.
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Spin transport parameters of NbN thin films characterised by spin pum** experiments
Authors:
K. Rogdakis,
A. Sud,
M. Amado,
C. M. Lee,
L. McKenzie-Sell,
K. R. Jeon,
M. Cubukcu,
M. G. Blamire,
J. W. A. Robinson,
L. F. Cohen,
H. Kurebayashi
Abstract:
We present measurements of ferromagnetic-resonance - driven spin pum** and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert dam** constant of the thin-film YIG was observed due to the presence of the NbN spin sink. By varying the NbN thickness and employing spin-diffusion theory, we have estimated the room temperature values of the spin di…
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We present measurements of ferromagnetic-resonance - driven spin pum** and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert dam** constant of the thin-film YIG was observed due to the presence of the NbN spin sink. By varying the NbN thickness and employing spin-diffusion theory, we have estimated the room temperature values of the spin diffusion length and the spin Hall angle in NbN to be 14 nm and -1.1 10-2, respectively. Furthermore, we have determined the spin-mixing conductance of the NbN/YIG interface to be 10 nm-2. The experimental quantification of these spin transport parameters is an important step towards the development of superconducting spintronic devices involving NbN thin films.
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Submitted 17 January, 2019;
originally announced January 2019.
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Electric power transfer in spin pum** experiments
Authors:
K. Rogdakis,
N. Alfert,
A. Srivastava,
J. W. A. Robinson,
M. G. Blamire,
L. F. Cohen,
H. Kurebayashi
Abstract:
Spin pum** is becoming an established method to generate voltages from magnetic dynamics. The standard detection method of spin pum** is based on open circuit voltage measurement across ferromagnetic (FM) and non-magnetic (NM) bi-layers, where the inverse spin-Hall effect (ISHE) can convert spin currents into electrical charge accumulation. In this paper, we present that it is also possible to…
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Spin pum** is becoming an established method to generate voltages from magnetic dynamics. The standard detection method of spin pum** is based on open circuit voltage measurement across ferromagnetic (FM) and non-magnetic (NM) bi-layers, where the inverse spin-Hall effect (ISHE) can convert spin currents into electrical charge accumulation. In this paper, we present that it is also possible to measure the associated electric charge current generated in FM/NM bi-layers, by using a macroscopic closed circuitry detection method. Using variable load resistors connected in series to the sample, we quantified charge currents and associated electric power dissipation as a function of the load resistance. By using basic circuit analysis, we are able to describe spin pum** cells as a non-ideal voltage source or equivalent current source with an internal resistor.
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Submitted 18 October, 2017; v1 submitted 14 September, 2017;
originally announced September 2017.
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Geometric tuning of charge and spin correlations in manganite superlattices
Authors:
K. Rogdakis,
Z. Viskadourakis,
A. P. Petrovic,
E. Choi,
J. Lee,
C. Panagopoulos
Abstract:
We report a modulation of the in-plane magnetotransport in artificial manganite superlattice (SL) [(NdMnO3)n /(SrMnO3)n /(LaMnO3)n]m by varying the layer thickness n while kee** the total thickness of the structure constant. Charge transport in these heterostructures is confined to the interfaces and occurs via variable range hop** (VRH). Upon increasing n, the interfacial separation rises, le…
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We report a modulation of the in-plane magnetotransport in artificial manganite superlattice (SL) [(NdMnO3)n /(SrMnO3)n /(LaMnO3)n]m by varying the layer thickness n while kee** the total thickness of the structure constant. Charge transport in these heterostructures is confined to the interfaces and occurs via variable range hop** (VRH). Upon increasing n, the interfacial separation rises, leading to a suppression of the electrostatic screening between carriers of neighboring interfaces and the opening of a Coulomb gap at the Fermi level (EF). The high-field magnetoresistance (MR) is universally negative due to progressive spin alignment. However at a critical thickness of n=5 unit cells (u.c.), an exchange field coupling between ferromagnetically ordered interfaces results in positive MR at low magnetic field (H). Our results demonstrate the ability to geometrically tune the electrical transport between regimes dominated by either charge or spin correlations.
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Submitted 10 January, 2015;
originally announced January 2015.
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Tunable ferroelectricity in artificial tri-layer superlattices comprised of non-ferroic components
Authors:
K. Rogdakis,
J. W. Seo,
Z. Viskadourakis,
Y. Wang,
L. F. N. Ah Qune,
E. Choi,
J. D. Burton,
E. Y. Tsymbal,
J. Lee,
C. Panagopoulos
Abstract:
Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an interface can affect the balance of the competing interactions among electronic spins, charges and orbitals. This has led to the emergence of properties absent in the o…
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Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an interface can affect the balance of the competing interactions among electronic spins, charges and orbitals. This has led to the emergence of properties absent in the original building blocks of a heterostructure, including metallicity, magnetism and superconductivity. Here we report the discovery of ferroelectricity in artificial tri-layer superlattices consisting solely of non-ferroelectric NdMnO3/SrMnO3/LaMnO3 layers. Ferroelectricity was observed below 40 K exhibiting strong tunability by superlattice periodicity. Furthermore, magnetoelectric coupling resulted in 150% magnetic modulation of the polarization. Density functional calculations indicate that broken space inversion symmetry and mixed valency, because of cationic asymmetry and interfacial polar discontinuity, respectively, give rise to the observed behavior. Our results demonstrate the engineering of asymmetric layered structures with emergent ferroelectric and magnetic field tunable functions distinct from that of normal devices, for which the components are typically ferroelectrics.
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Submitted 23 September, 2012;
originally announced September 2012.
