Showing 1–23 of 23 results for author: Rodin, A S

Proton and Neutron Induced SEU Cross Section Modeling and Simulation: A Unified Analytical Approach

Authors: Gennady I. Zebrev, Nikolay N. Samotaev, Rustem G. Useinov, Artur M. Galimov, Vladimir V. Emeliyanov, Artyom A. Sharapov, Dmitri A. Kazyakin, Alexander S. Rodin

Abstract: A new physics-based compact model, which makes it possible to simulate in a unified way the neutron and proton of cosmic ray induced SEU cross sections, including effects from nuclear reaction products and from direct ionization by low-energy protons, has been proposed and vali-dated. The proposed approach is analytical and based on explicit analytical relationships and approximations with physics… ▽ More A new physics-based compact model, which makes it possible to simulate in a unified way the neutron and proton of cosmic ray induced SEU cross sections, including effects from nuclear reaction products and from direct ionization by low-energy protons, has been proposed and vali-dated. The proposed approach is analytical and based on explicit analytical relationships and approximations with physics-based fitting parameters. GEANT4 or SRIM numerical calculations can be used as an aid to adjust or refine the phenomenological parameters or functions included in the model taking into account real geometrical configurations and chemical compositions of the devices. In particular, explicit energy dependencies of the soft error cross sections for protons and neutrons over a wide range of nucleon energies were obtained and validated. Main application areas of developed model include space physics, accelerator studies high energy physics and nuclear experiments. △ Less

Submitted 20 February, 2024; originally announced February 2024.

Comments: 12 pages, 12 figures, 33 references

Journal ref: Radiation, 2024, Vol. 4(1), pp. 37-49

Strain-induced gauge and Rashba fields in ferroelectric Rashba lead chalcogenide PbX monolayers (X = S, Se, Te)

Authors: Paul Z. Hanakata, A. S. Rodin, Harold S. Park, David K. Campbell, A. H. Castro Neto

Abstract: One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable spin-orbital properties. In this work, based on our previous tight-binding (TB) results, we derive an effective low-energy Hamiltonian around the symmetry points… ▽ More One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable spin-orbital properties. In this work, based on our previous tight-binding (TB) results, we derive an effective low-energy Hamiltonian around the symmetry points that captures the effects of strain on the electronic properties of PbX. We find that strains induce gauge fields which shift the Rashba point and modify the Rashba parameter. This effect is equivalent to the application of in-plane magnetic fields. The out-of-plane strain, which is proportional to the electric polarization, is also shown to modify the Rashba parameter. Overall, our theory connects strain and spin splitting in ferroelectric Rashba materials, which will be important to understand the strain-induced variations in local Rashba parameters that will occur in practical applications. △ Less

Submitted 28 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. B 97, 235312 (2018)

Two-dimensional Square Buckled Rashba Lead Chalcogenides

Authors: Paul Z. Hanakata, A. S. Rodin, Alexandra Carvalho, Harold S. Park, David K. Campbell, A. H. Castro Neto

Abstract: We propose the lead sulphide (PbS) monolayer as a 2D semiconductor with a large Rashba-like spin-orbit effect controlled by the out-of-plane buckling. The buckled PbS conduction band is found to possess Rashba-like dispersion and spin texture at the $M$ and $Γ$ points, with large effective Rashba parameters of $λ\sim5~$eV$Å~$ and $λ\sim1~$eV$~Å$, respectively. Using a tight-binding formalism, we s… ▽ More We propose the lead sulphide (PbS) monolayer as a 2D semiconductor with a large Rashba-like spin-orbit effect controlled by the out-of-plane buckling. The buckled PbS conduction band is found to possess Rashba-like dispersion and spin texture at the $M$ and $Γ$ points, with large effective Rashba parameters of $λ\sim5~$eV$Å~$ and $λ\sim1~$eV$~Å$, respectively. Using a tight-binding formalism, we show that the Rashba effect originates from the very large spin-orbit interaction and the hop** term that mixes the in-plane and out-of-plane $p$ orbitals of Pb and S atoms. The latter, which depends on the buckling angle, can be controlled by applying strain to vary the spin texture as well as the Rashba parameter at $Γ$ and $M$. Our density functional theory results together with tight-binding formalism provide a unifying framework for designing Rashba monolayers and for manipulating their spin properties. △ Less

Submitted 25 October, 2017; originally announced October 2017.

Journal ref: Physical Review B 96, 161401(R) (2017)

Spin-Orbit Dirac Fermions in 2D Systems

Authors: Aleksandr S. Rodin, Paul Z. Hanakata, Alexandra Carvalho, Harold S. Park, David K. Campbell, Antonio H. Castro Neto

Abstract: We propose a novel model for including spin-orbit interactions in buckled two dimensional systems. Our results show that in such systems, intrinsic spin-orbit coupling leads to a formation of Dirac cones, similar to Rashba model. We explore the microscopic origins of this behaviour and confirm our results using DFT calculations. We propose a novel model for including spin-orbit interactions in buckled two dimensional systems. Our results show that in such systems, intrinsic spin-orbit coupling leads to a formation of Dirac cones, similar to Rashba model. We explore the microscopic origins of this behaviour and confirm our results using DFT calculations. △ Less

Submitted 14 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. B 96, 115450 (2017)

Strongly bound Mott-Wannier Excitons in GeS and GeSe monolayers

Authors: Lidia C. Gomes, P. E. Trevisanutto, A. Carvalho, A. S. Rodin, A. H. Castro Neto

Abstract: The excitonic spectra of single layer GeS and GeSe are predicted by ab initio GW-Bethe Salpeter equation calculations. G 0 W 0 calculations for the band structures find a fundamental band gap of 2.85 eV for GeS and 1.70 eV for GeSe monolayer. However, excitons are tightly bound, specially in GeS at the Γ point, where the quasi-particle interactions are so strong that they shift the Γ exciton peak… ▽ More The excitonic spectra of single layer GeS and GeSe are predicted by ab initio GW-Bethe Salpeter equation calculations. G 0 W 0 calculations for the band structures find a fundamental band gap of 2.85 eV for GeS and 1.70 eV for GeSe monolayer. However, excitons are tightly bound, specially in GeS at the Γ point, where the quasi-particle interactions are so strong that they shift the Γ exciton peak energy into the visible range and below the off-Γ exciton peak. The lowest energy excitons in both materials are excited by light along the zigzag direction and have exciton binding energies of 1.05 eV and 0.4 eV, respectively, but despite the strong binding, the calculated binding energies are in agreement with a Mott-Wannier model. △ Less

Submitted 26 July, 2016; originally announced July 2016.

Journal ref: Phys. Rev. B 94, 155428 (2016)

Multiferroic Two-Dimensional Materials

Authors: L. Seixas, A. S. Rodin, A. Carvalho, A. H. Castro Neto

Abstract: The relation between unusual Mexican-hat band dispersion, ferromagnetism and ferroelasticity is investigated using a combination of analytical, first-principles and phenomenological methods. The class of material with Mexican-hat band edge is studied using the $α$-SnO monolayer as a prototype. Such band edge causes a van Hove singularity diverging with $\frac{1}{\sqrt{E}}$, and in p-type material… ▽ More The relation between unusual Mexican-hat band dispersion, ferromagnetism and ferroelasticity is investigated using a combination of analytical, first-principles and phenomenological methods. The class of material with Mexican-hat band edge is studied using the $α$-SnO monolayer as a prototype. Such band edge causes a van Hove singularity diverging with $\frac{1}{\sqrt{E}}$, and in p-type material leads to spatial and/or time-reversal spontaneous symmetry breaking. We show that an unexpected multiferroic phase is obtained in a range of hole density for which the material presents ferromagnetism and ferroelasticity simultaneously. △ Less

Submitted 24 January, 2016; originally announced January 2016.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 116, 206803 (2016)

Tunneling Plasmonics in Bilayer Graphene

Authors: Z. Fei, E. G. Iwinski, G. X. Ni, L. M. Zhang, W. Bao, A. S. Rodin, Y. Lee, M. Wagner, M. K. Liu, S. Dai, M. D. Goldflam, M. Thiemens, F. Keilmann, C. N. Lau, A. H. Castro-Neto, M. M. Fogler, D. N. Basov

Abstract: We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter.… ▽ More We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter. We found through infrared nano-imaging that bilayer graphene supports plasmons with a higher degree of confinement compared to single- and double-layer graphene, a direct consequence of interlayer tunneling. Moreover, we were able to shut off plasmons in bilayer graphene through gating within a wide voltage range. Theoretical modeling indicates that such a plasmon-off region is directly linked to a gapped insulating state of bilayer graphene: yet another implication of interlayer tunneling. Our work uncovers essential plasmonic properties in bilayer graphene and suggests a possibility to achieve novel plasmonic functionalities in graphene few-layers. △ Less

Submitted 31 August, 2015; originally announced August 2015.

Comments: 27 pages, 11 figures

Journal ref: Nano Lett. 15, 4973-4978 (2015)

Valleytronics in Tin (II) Sulfide

Authors: A. S. Rodin, L. C. Gomes, A. Carvalho, A. H. Castro Neto

Abstract: Tin (II) sulfide (SnS) is a layered mineral found in nature. In this paper, we study the two-dimensional form of this material using a combination of \emph{ab initio} calculation and $\mathbf{k}\cdot\mathbf{p}$ theory. In particular, we address the valley properties and the optical selection rules of 2D SnS. Our study reveals SnS as an extraordinary material for valleytronics, where pairs of equiv… ▽ More Tin (II) sulfide (SnS) is a layered mineral found in nature. In this paper, we study the two-dimensional form of this material using a combination of \emph{ab initio} calculation and $\mathbf{k}\cdot\mathbf{p}$ theory. In particular, we address the valley properties and the optical selection rules of 2D SnS. Our study reveals SnS as an extraordinary material for valleytronics, where pairs of equivalent valleys are placed along two perpendicular axes, can be selected exclusively with linear polarized light, and can be separated using non-local electrical measurements. △ Less

Submitted 31 August, 2015; originally announced August 2015.

Comments: 4 Pages, 3 Figures

Exciton binding energies and luminescence of phosphorene under pressure

Authors: L. Seixas, A. S. Rodin, A. Carvalho, A. H. Castro Neto

Abstract: The optical response of phosphorene can be gradually changed by application of moderate uniaxial compression, as the material undergoes the transition into an indirect gap semiconductor and eventually into a semimetal. Strain tunes not only the gap between the valence band and conduction band local extrema, but also the effective masses, and in consequence, the exciton anisotropy and binding stren… ▽ More The optical response of phosphorene can be gradually changed by application of moderate uniaxial compression, as the material undergoes the transition into an indirect gap semiconductor and eventually into a semimetal. Strain tunes not only the gap between the valence band and conduction band local extrema, but also the effective masses, and in consequence, the exciton anisotropy and binding strength. In this article, we consider from a theoretical point of view how the exciton stability and the resulting luminescence energy evolves under uniaxial strain. We find that the exciton binding energy can be as large as 0.87 eV in vacuum for 5% transverse strain, placing it amongst the highest for 2D materials. Further, the large shift of the luminescence peak and its linear dependence on strain suggest that it can be used to probe directly the strain state of single-layers. △ Less

Submitted 9 February, 2015; v1 submitted 29 December, 2014; originally announced December 2014.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 91, 115437 (2015)

Collective modes in anisotropic double layer systems

Authors: A. S. Rodin, A. H. Castro Neto

Abstract: We study collective modes in anisotropic double layer systems. To this end, we derive a zero-$T$ dynamic polarization function for a conductor with a paraboloidal dispersion. Following this, we demonstrate the dependence of the plasmonic modes on the relative orientation, do**, and system anisotropy. We study collective modes in anisotropic double layer systems. To this end, we derive a zero-$T$ dynamic polarization function for a conductor with a paraboloidal dispersion. Following this, we demonstrate the dependence of the plasmonic modes on the relative orientation, do**, and system anisotropy. △ Less

Submitted 2 December, 2014; originally announced December 2014.

Comments: 4 pages, 6 figures

Infrared nano-spectroscopy and imaging of collective superfluid excitations in conventional and high-temperature superconductors

Authors: H. T. Stinson, J. S. Wu, B. Y. Jiang, Z. Fei, A. S. Rodin, B. C. Chapler, A. S. Mcleod, A. Castro Neto, Y. S. Lee, M. M. Fogler, D. N. Basov

Abstract: We investigate near-field infrared spectroscopy and superfluid polariton imaging experiments on conventional and unconventional superconductors. Our modeling shows that near-field spectroscopy can measure the magnitude of the superconducting energy gap in Bardeen-Cooper-Schrieffer-like superconductors with nanoscale spatial resolution. We demonstrate how the same technique can measure the c-axis p… ▽ More We investigate near-field infrared spectroscopy and superfluid polariton imaging experiments on conventional and unconventional superconductors. Our modeling shows that near-field spectroscopy can measure the magnitude of the superconducting energy gap in Bardeen-Cooper-Schrieffer-like superconductors with nanoscale spatial resolution. We demonstrate how the same technique can measure the c-axis plasma frequency, and thus the c-axis superfluid density, of layered unconventional superconductors with a similar spatial resolution. Our modeling also shows that near-field techniques can image superfluid surface mode interference patterns near physical and electronic boundaries. We describe how these images can be used to extract the collective mode dispersion of anisotropic superconductors with sub-diffractional spatial resolution. △ Less

Submitted 22 July, 2014; originally announced July 2014.

Comments: 11 pages, 8 figures

Journal ref: Phys. Rev. B 90, 014502 (2014)

Excitons in anisotropic 2D semiconducting crystals

Authors: A. S. Rodin, A. Carvalho, A. H. Castro Neto

Abstract: The excitonic behavior of anisotropic two-dimensional crystals is investigated using numerical methods. We employ a screened potential arising due to the system polarizability to solve the central-potential problem using the Numerov approach. The dependence of the exciton energies on the interaction strength and mass anisotropy is demonstrated. We use our results to obtain the exciton binding ener… ▽ More The excitonic behavior of anisotropic two-dimensional crystals is investigated using numerical methods. We employ a screened potential arising due to the system polarizability to solve the central-potential problem using the Numerov approach. The dependence of the exciton energies on the interaction strength and mass anisotropy is demonstrated. We use our results to obtain the exciton binding energy in phosphorene as a function of the substrate dielectric constant. △ Less

Submitted 3 July, 2014; originally announced July 2014.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. B 90, 075429 (2014)

Phosphorene nanoribbons

Authors: A. Carvalho, A. S. Rodin, A. H. Castro Neto

Abstract: Edge-induced gap states in finite phosphorene layers are examined using analytical models and density functional theory. The nature of such gap states depends on the direction of the cut. Armchair nanoribbons are insulating, whereas nanoribbons cut in the perpendicular direction (with zigzag and cliff-type edges) are metallic, unless they undergo a reconstruction or distortion with cell doubling,… ▽ More Edge-induced gap states in finite phosphorene layers are examined using analytical models and density functional theory. The nature of such gap states depends on the direction of the cut. Armchair nanoribbons are insulating, whereas nanoribbons cut in the perpendicular direction (with zigzag and cliff-type edges) are metallic, unless they undergo a reconstruction or distortion with cell doubling, which opens a gap. All stable nanoribbons with unsaturated edges have gap states that can be removed by hydrogen passivation. Armchair nanoribbon edge states decay exponentially with the distance to the edge and can be described by a nearly-free electron model. △ Less

Submitted 29 August, 2014; v1 submitted 21 April, 2014; originally announced April 2014.

Tunable optical properties of multilayers black phosphorus thin films

Authors: Tony Low, A. S. Rodin, A. Carvalho, Yong** Jiang, Han Wang, Fengnian Xia, A. H. Castro Neto

Abstract: Black phosphorus thin films might offer attractive alternatives to narrow gap compound semiconductors for optoelectronics across mid- to near-infrared frequencies. In this work, we calculate the optical conductivity tensor of multilayer black phosphorus thin films using the Kubo formula within an effective low-energy Hamiltonian. The optical absorption spectra of multilayer black phosphorus are sh… ▽ More Black phosphorus thin films might offer attractive alternatives to narrow gap compound semiconductors for optoelectronics across mid- to near-infrared frequencies. In this work, we calculate the optical conductivity tensor of multilayer black phosphorus thin films using the Kubo formula within an effective low-energy Hamiltonian. The optical absorption spectra of multilayer black phosphorus are shown to vary sensitively with thickness, do**, and light polarization. In conjunction with experimental spectra obtained from infrared absorption spectroscopy, we also discuss the role of interband coupling and disorder on the observed anisotropic absorption spectra. △ Less

Submitted 11 July, 2014; v1 submitted 15 April, 2014; originally announced April 2014.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 90, 075434 (2014)

Ultrafast and Nanoscale Plasmonic Phenomena in Exfoliated Graphene Revealed by Infrared Pump-Probe Nanoscopy

Authors: Martin Wagner, Zhe Fei, Alexander S. McLeod, Aleksandr S. Rodin, Wenzhong Bao, Eric G. Iwinski, Zeng Zhao, Michael Goldflam, Mengkun Liu, Gerardo Dominguez, Mark Thiemens, Michael M. Fogler, Antonio H. Castro Neto, Chun Ning Lau, Sergiu Amarie, Fritz Keilmann, D. N. Basov

Abstract: Pump-probe spectroscopy is central for exploring ultrafast dynamics of fundamental excitations, collective modes and energy transfer processes. Typically carried out using conventional diffraction-limited optics, pump-probe experiments inherently average over local chemical, compositional, and electronic inhomogeneities. Here we circumvent this deficiency and introduce pump-probe infrared spectros… ▽ More Pump-probe spectroscopy is central for exploring ultrafast dynamics of fundamental excitations, collective modes and energy transfer processes. Typically carried out using conventional diffraction-limited optics, pump-probe experiments inherently average over local chemical, compositional, and electronic inhomogeneities. Here we circumvent this deficiency and introduce pump-probe infrared spectroscopy with ~20 nm spatial resolution, far below the diffraction limit, which is accomplished using a scattering scanning near-field optical microscope (s-SNOM). This technique allows us to investigate exfoliated graphene single-layers on SiO2 at technologically significant mid-infrared (MIR) frequencies where the local optical conductivity becomes experimentally accessible through the excitation of surface plasmons via the s-SNOM tip. Optical pum** at near-infrared (NIR) frequencies prompts distinct changes in the plasmonic behavior on 200 femtosecond (fs) time scales. The origin of the pump-induced, enhanced plasmonic response is identified as an increase in the effective electron temperature up to several thousand Kelvin, as deduced directly from the Drude weight associated with the plasmonic resonances. △ Less

Submitted 24 February, 2014; originally announced February 2014.

Comments: 27 pages (including Supporting Information), 8 figures

Journal ref: Nano Letters 14, 894 (2014)

Strain-induced gap modification in black phosphorus

Authors: A. S. Rodin, A. Carvalho, A. H. Castro Neto

Abstract: The band structure of single-layer black phosphorus and the effect of strain are predicted using density functional theory and tight-binding models. Having determined the localized orbital composition of the individual bands from first-principles, we use the system symmetry to write down the effective low-energy Hamiltonian at the $Γ$ point. From numerical calculations and arguments based on the c… ▽ More The band structure of single-layer black phosphorus and the effect of strain are predicted using density functional theory and tight-binding models. Having determined the localized orbital composition of the individual bands from first-principles, we use the system symmetry to write down the effective low-energy Hamiltonian at the $Γ$ point. From numerical calculations and arguments based on the crystal structure of the material, we show that the deformation in the direction normal to the plane can be use to change the gap size and induce a semiconductor-metal transition. △ Less

Submitted 8 January, 2014; originally announced January 2014.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 112, 176801 (2014)

Electronic and plasmonic phenomena at graphene grain boundaries

Authors: Z. Fei, A. S. Rodin, W. Gannett, S. Dai, W. Regan, M. Wagner, M. K. Liu, A. S. McLeod, G. Dominguez, M. Thiemens, A. H. Castro Neto, F. Keilmann, A. Zettl, R. Hillenbrand, M. M. Fogler, D. N. Basov

Abstract: Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of t… ▽ More Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of the grain boundaries. However, the physical properties of these grain boundaries remain challenging to characterize directly and conveniently. Here, we show that it is possible to visualize and investigate the grain boundaries in CVD-grown graphene using an infrared nano-imaging technique. We harness surface plasmons that are reflected and scattered by the graphene grain boundaries, thus causing plasmon interference. By recording and analyzing the interference patterns, we can map grain boundaries for a large area CVD-grown graphene film and probe the electronic properties of individual grain boundaries. Quantitative analysis reveals that grain boundaries form electronic barriers that obstruct both electrical transport and plasmon propagation. The effective width of these barriers (~10-20 nm) depends on the electronic screening and it is on the order of the Fermi wavelength of graphene. These results uncover a microscopic mechanism that is responsible for the low electron mobility observed in CVD-grown graphene, and suggest the possibility of using electronic barriers to realize tunable plasmon reflectors and phase retarders in future graphene-based plasmonic circuits. △ Less

Submitted 26 November, 2013; originally announced November 2013.

Comments: 25 pages, 9 figures

Journal ref: Nature Nanotechnology 8, 821-825 (2013)

Plasmonic Hot Spots in Triangular Tapered Graphene Microcrystals

Authors: A. S. Rodin, Z. Fei, A. S. McLeod, M. Wagner, A. H. Castro Neto, M. M. Fogler, D. N. Basov

Abstract: Recently, plasmons in graphene have been observed experimentally using scattering scanning near-field optical microscopy. In this paper, we develop a simplified analytical approach to describe the behavior in triangular samples. Replacing Coulomb interaction by a short-range one reduces the problem to a Helmholtz equation, amenable to analytical treatment. We demonstrate that even with our simplif… ▽ More Recently, plasmons in graphene have been observed experimentally using scattering scanning near-field optical microscopy. In this paper, we develop a simplified analytical approach to describe the behavior in triangular samples. Replacing Coulomb interaction by a short-range one reduces the problem to a Helmholtz equation, amenable to analytical treatment. We demonstrate that even with our simplifications, the system still exhibits the key features seen in the experiment. △ Less

Submitted 7 September, 2013; originally announced September 2013.

Comments: 4 pages, 3 figures

Excitonic Collapse in Semiconducting Transition Metal Dichalcogenides

Authors: A. S. Rodin, A. H. Castro Neto

Abstract: Semiconducting transition metal dichalcogenides (STMDC) are two-dimensional (2D) crystals characterized by electron volt size band gaps, spin-orbit coupling (SOC), and d-orbital character of its valence and conduction bands. We show that these materials carry unique exciton quasiparticles (electron-hole bound states) with energy within the gap but which can ``collapse'' in the strong coupling regi… ▽ More Semiconducting transition metal dichalcogenides (STMDC) are two-dimensional (2D) crystals characterized by electron volt size band gaps, spin-orbit coupling (SOC), and d-orbital character of its valence and conduction bands. We show that these materials carry unique exciton quasiparticles (electron-hole bound states) with energy within the gap but which can ``collapse'' in the strong coupling regime by merging into the band structure continuum. The exciton collapse seems to be a generic effect in these 2D crystals. △ Less

Submitted 12 November, 2013; v1 submitted 18 May, 2013; originally announced May 2013.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 88, 195437 (2013)

Gate-tuning of graphene plasmons revealed by infrared nano-imaging

Authors: Z. Fei, A. S. Rodin, G. O. Andreev, W. Bao, A. S. McLeod, M. Wagner, L. M. Zhang, Z. Zhao, G. Dominguez, M. Thiemens, M. M. Fogler, A. H. Castro-Neto, C. N. Lau, F. Keilmann, D. N. Basov

Abstract: Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium-graphene-is amenable to convenient tuning o… ▽ More Surface plasmons are collective oscillations of electrons in metals or semiconductors enabling confinement and control of electromagnetic energy at subwavelength scales. Rapid progress in plasmonics has largely relied on advances in device nano-fabrication, whereas less attention has been paid to the tunable properties of plasmonic media. One such medium-graphene-is amenable to convenient tuning of its electronic and optical properties with gate voltage. Through infrared nano-imaging we explicitly show that common graphene/SiO2/Si back-gated structures support propagating surface plasmons. The wavelength of graphene plasmons is of the order of 200 nm at technologically relevant infrared frequencies, and they can propagate several times this distance. We have succeeded in altering both the amplitude and wavelength of these plasmons by gate voltage. We investigated losses in graphene using plasmon interferometry: by exploring real space profiles of plasmon standing waves formed between the tip of our nano-probe and edges of the samples. Plasmon dissipation quantified through this analysis is linked to the exotic electrodynamics of graphene. Standard plasmonic figures of merits of our tunable graphene devices surpass that of common metal-based structures. △ Less

Submitted 31 May, 2012; v1 submitted 22 February, 2012; originally announced February 2012.

Comments: 15 pages, 3 figures

Journal ref: Nature (2012) 487,82-85

Hop** transport in systems of finite thickness or length

Authors: A. S. Rodin, M. M. Fogler

Abstract: Variable-range hop** transport along short one-dimensional wires and across the shortest dimension of thin three-dimensional films and narrow two-dimensional ribbons is studied theoretically. Geometric and transport characteristics of the hop** resistor network are shown to depend on temperature T and the dimensionality of the system. In two and three dimensions the usual Mott law applies at h… ▽ More Variable-range hop** transport along short one-dimensional wires and across the shortest dimension of thin three-dimensional films and narrow two-dimensional ribbons is studied theoretically. Geometric and transport characteristics of the hop** resistor network are shown to depend on temperature T and the dimensionality of the system. In two and three dimensions the usual Mott law applies at high T where the correlation length of the network is smaller than the sample thickness. As T decreases, the network breaks into sparse filamentary paths, while the Mott law changes to a different T-dependence, which is derived using the percolation theory methods. In one dimension, deviations from the Mott law are known to exist at all temperatures because of rare fluctuations. The evolution of such fluctuations from highly-resistive "breaks" at high T to highly-conducting "shorts" at low T is elucidated. △ Less

Submitted 19 July, 2011; v1 submitted 18 July, 2011; originally announced July 2011.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 84, 125447 (2011)

Apparent power-law behavior of conductance in disordered quasi-one-dimensional systems

Authors: A. S. Rodin, M. M. Fogler

Abstract: Dependence of hop** conductance on temperature and voltage for an ensemble of modestly long one-dimensional wires is studied numerically using the shortest-path algorithm. In a wide range of parameters this dependence can be approximated by a power-law rather than the usual stretched-exponential form. Relation to recent experiments and prior analytical theory is discussed. Dependence of hop** conductance on temperature and voltage for an ensemble of modestly long one-dimensional wires is studied numerically using the shortest-path algorithm. In a wide range of parameters this dependence can be approximated by a power-law rather than the usual stretched-exponential form. Relation to recent experiments and prior analytical theory is discussed. △ Less

Submitted 20 June, 2010; v1 submitted 10 June, 2010; originally announced June 2010.

Comments: 5 pages, 3 figures. Comparison with prior theoretical and experimental work was extended

Journal ref: Phys. Rev. Lett. 105, 106801 (2010)

Numerical studies of variable-range hop** in one-dimensional systems

Authors: A. S. Rodin, M. M. Fogler

Abstract: Hop** transport in a one-dimensional system is studied numerically. A fast algorithm is devised to find the lowest-resistance path at arbitrary electric field. Probability distribution functions of individual resistances on the path and the net resistance are calculated and fitted to compact analytic formulas. Qualitative differences between statistics of resistance fluctuations in Ohmic and n… ▽ More Hop** transport in a one-dimensional system is studied numerically. A fast algorithm is devised to find the lowest-resistance path at arbitrary electric field. Probability distribution functions of individual resistances on the path and the net resistance are calculated and fitted to compact analytic formulas. Qualitative differences between statistics of resistance fluctuations in Ohmic and non-Ohmic regimes are elucidated. The results are compared with prior theoretical and experimental work on the subject. △ Less

Submitted 15 October, 2009; v1 submitted 2 September, 2009; originally announced September 2009.

Comments: 12 pages, 12 figures. Published version

Journal ref: Phys. Rev. B 80, 155435 (2009)