Showing 1–50 of 69 results for author: Roddaro, S

Ultrafast nano generation of acoustic waves in water via a single carbon nanotube

Authors: Michele Diego, Marco Gandolfi, Alessandro Casto, Francesco Maria Bellussi, Fabien Vialla, Aurélien Crut, Stefano Roddaro, Matteo Fasano, Fabrice Vallée, Natalia Del Fatti, Paolo Maioli, Francesco Banfi

Abstract: Generation of ultra high frequency acoustic waves in water is key to nano resolution sensing, acoustic imaging and theranostics. In this context water immersed carbon nanotubes (CNTs) may act as an ideal optoacoustic source, due to their nanometric radial dimensions, peculiar thermal properties and broad band optical absorption. The generation mechanism of acoustic waves in water, upon excitation… ▽ More Generation of ultra high frequency acoustic waves in water is key to nano resolution sensing, acoustic imaging and theranostics. In this context water immersed carbon nanotubes (CNTs) may act as an ideal optoacoustic source, due to their nanometric radial dimensions, peculiar thermal properties and broad band optical absorption. The generation mechanism of acoustic waves in water, upon excitation of both a single-wall (SW) and a multi-wall (MW) CNT with laser pulses of temporal width ranging from 5 ns down to ps, is theoretically investigated via a multi-scale approach. We show that, depending on the combination of CNT size and laser pulse duration, the CNT can act as a thermophone or a mechanophone. As a thermophone, the CNT acts as a nanoheater for the surrounding water, which, upon thermal expansion, launches the pressure wave. As a mechanophone, the CNT acts as a nanopiston, its thermal expansion directly triggering the pressure wave in water. Activation of the mechanophone effect is sought to trigger few nanometers wavelength sound waves in water, matching the CNT acoustic frequencies. This is at variance with respect to the commonly addressed case of water-immersed single metallic nano-objects excited with ns laser pulses, where only the thermophone effect significantly contributes. The present findings might be of impact in fields ranging from nanoscale non-destructive testing to water dynamics at the meso- to nano-scale. △ Less

Submitted 15 June, 2024; originally announced June 2024.

Comments: 13 pages, 9 figures

Journal ref: Photoacoustics 28, 100407 (2022)

Electron cooling in graphene thermal transistors

Authors: Federico Paolucci, Federica Bianco, Francesco Giazotto, Stefano Roddaro

Abstract: In the emergent field of quantum technology, the ability to manage heat at the nanoscale and in cryogenic conditions is crucial for enhancing device performance in terms of noise, coherence, and sensitivity. Here, we demonstrate the active cooling and refrigeration of the electron gas in a graphene thermal transistor, by taking advantage of nanoscale superconductive tunnel contacts able to pump or… ▽ More In the emergent field of quantum technology, the ability to manage heat at the nanoscale and in cryogenic conditions is crucial for enhancing device performance in terms of noise, coherence, and sensitivity. Here, we demonstrate the active cooling and refrigeration of the electron gas in a graphene thermal transistor, by taking advantage of nanoscale superconductive tunnel contacts able to pump or extract heat directly from the electrons in the device. Our prototypes achieved a top cooling of electrons in graphene of about 15 mK at a bath temperature of about 450 mK, demonstrating the viability of the proposed device architecture. Our experimental findings are backed by a detailed thermal model that accurately replicated the observed device behavior. Alternative cooling schemes and perspectives are discussed in light of the reported results. Finally, our graphene thermal transistor could find application in superconducting hybrid quantum technologies. △ Less

Submitted 13 February, 2024; originally announced February 2024.

Comments: Main text: 23 pages and 4 figures; SI: 3 page and 2 figures; 1 Graphical Table of Contents

Optical grade bromide-based thin film electrolytes

Authors: Nicola Melchioni, Giacomo Trupiano, Giorgio Tofani, Riccardo Bertini, Andrea Mezzetta, Federica Bianco, Lorenzo Guazzelli, Fabio Beltram, Christian Silvio Pomelli, Stefano Roddaro, Alessandro Tredicucci, Federico Paolucci

Abstract: Controlling the charge density in low-dimensional materials with an electrostatic potential is a powerful tool to explore and influence their electronic and optical properties. Conventional solid gates impose strict geometrical constraints to the devices and often absorb electromagnetic radiation in the infrared (IR) region. A powerful alternative is ionic liquid (IL) gating. This technique only n… ▽ More Controlling the charge density in low-dimensional materials with an electrostatic potential is a powerful tool to explore and influence their electronic and optical properties. Conventional solid gates impose strict geometrical constraints to the devices and often absorb electromagnetic radiation in the infrared (IR) region. A powerful alternative is ionic liquid (IL) gating. This technique only needs a metallic electrode in contact with the IL and the highest achievable electric field is limited by the electrochemical interactions of the IL with the environment. Despite the excellent gating properties, a large number of ILs is hardly exploitable for optical experiments in the mid-IR region, because they typically suffer from low optical transparency and degradation in ambient conditions. Here, we report the realization of two electrolytes based on bromide ILs dissolved in polymethyl methacrylate (PMMA). We demonstrate that such electrolytes can induce state-of-the-art charge densities as high as $20\times10^{15}\ \mathrm{cm^{-2}}$. Thanks to the low water absorption of PMMA, they work both in vacuum and in ambient atmosphere after a simple vacuum curing. Furthermore, our electrolytes can be spin coated into flat thin films with optical transparency in the range from 600 cm$^{-1}$ to 4000 cm$^{-1}$. Thanks to these properties, the electrolytes are excellent candidates to fill the gap as versatile gating layers for electronic and mid-IR optoelectronic devices. △ Less

Submitted 13 April, 2023; originally announced April 2023.

Comments: 15 pages, 4 figures

Journal ref: Appl. Phys. Lett. 122, 243505 (2023)

Probing enhanced electron-phonon coupling in graphene by infrared resonance Raman spectroscopy

Authors: Tommaso Venanzi, Lorenzo Graziotto, Francesco Macheda, Simone Sotgiu, Taoufiq Ouaj, Elena Stellino, Claudia Fasolato, Paolo Postorino, Vaidotas Mišeikis, Marvin Metzelaars, Paul Kögerler, Bernd Beschoten, Camilla Coletti, Stefano Roddaro, Matteo Calandra, Michele Ortolani, Christoph Stampfer, Francesco Mauri, Leonetta Baldassarre

Abstract: We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at $\mathbf{K}$, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D$^\prime$ peaks with respect to that measured in graphite.… ▽ More We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at $\mathbf{K}$, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D$^\prime$ peaks with respect to that measured in graphite. Comparing with fully \textit{ab initio} theoretical calculations, we conclude that the observation is explained by an enhanced, momentum-dependent coupling between electrons and Brillouin zone-boundary optical phonons. This finding applies to two dimensional Dirac systems and has important consequences for the modeling of transport in graphene devices operating at room temperature. △ Less

Submitted 22 May, 2023; v1 submitted 2 December, 2022; originally announced December 2022.

Comments: 6 pages, 3 figures

Bipolar Thermoelectricity in Bilayer-Graphene--Superconductor Tunnel Junctions

Authors: Lorenzo Bernazzani, Giampiero Marchegiani, Francesco Giazotto, Stefano Roddaro, Alessandro Braggio

Abstract: We investigate the thermoelectric properties of a hybrid nanodevice composed by a 2D carbon based material and a superconductor. This system presents nonlinear bipolar thermoelectricity as induced by the spontaneous breaking of the Particle-Hole (PH) symmetry in a tunnel junction between a BiLayer Graphene (BLG) and a Bardeen-Cooper-Schrieffer (BCS) superconductor. In this scheme, the nonlinear th… ▽ More We investigate the thermoelectric properties of a hybrid nanodevice composed by a 2D carbon based material and a superconductor. This system presents nonlinear bipolar thermoelectricity as induced by the spontaneous breaking of the Particle-Hole (PH) symmetry in a tunnel junction between a BiLayer Graphene (BLG) and a Bardeen-Cooper-Schrieffer (BCS) superconductor. In this scheme, the nonlinear thermoelectric effect, predicted and observed in SIS' junctions is not affected by the competitive effect of the Josephson coupling. From a fundamental perspective, the most intriguing feature of this effect is its bipolarity. The capability to open and control the BLG gap guarantees improved thermoelectric performances, that reach up to 1 mV/K regarding the Seebeck coefficient and a power density of 1 nW/$μ$m$^2$ for temperature gradients of tens of Kelvins. Furthermore, the externally controlled gating can also dope the BLG, which is otherwise intrinsically PH symmetric, giving us the opportunity to investigate the bipolar thermoelectricity even in presence of a controlled suppression of the PH symmetry. The predicted robustness of this system could foster further experimental investigations and applications in the near future, thanks to the available techniques of nano-fabrication. △ Less

Submitted 7 April, 2023; v1 submitted 18 July, 2022; originally announced July 2022.

Journal ref: Phys. Rev. Applied 19, 044017 (2023)

Strain-engineered wrinkles on graphene using polymeric actuators

Authors: Davide Giambastiani, Cosimo Tommasi, Federica Bianco, Filippo Fabbri, Camilla Coletti, Alessandro Tredicucci, Alessandro Pitanti, Stefano Roddaro

Abstract: The electronic and optical properties of graphene can be precisely tuned by generating deterministic arrangements of strain features. In this paper, we report the formation of widespread and controlled buckling delamination of monolayer graphene deposited on hexagonal boron-nitride promoted by a significant squeezing of the graphene flake and induced by polymeric micro-actuators. The flexibility o… ▽ More The electronic and optical properties of graphene can be precisely tuned by generating deterministic arrangements of strain features. In this paper, we report the formation of widespread and controlled buckling delamination of monolayer graphene deposited on hexagonal boron-nitride promoted by a significant squeezing of the graphene flake and induced by polymeric micro-actuators. The flexibility of this method offers a promising technique to create arbitrary buckling geometries and arrays of wrinkles which could also be subjected to iterative folding-unfolding cycles. Further development of this method could pave the way to tune the properties of several kinds of other two-dimensional materials, such as transition metal dichalcogenides, by tailoring their surface topography. △ Less

Submitted 31 August, 2022; v1 submitted 21 May, 2022; originally announced June 2022.

Journal ref: Phys. Rev. Applied 18, 024069 (2022)

Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2

Authors: Erik Piatti, Giacomo Prando, Martina Meinero, Cesare Tresca, Marina Putti, Stefano Roddaro, Gianrico Lamura, Toni Shiroka, Pietro Carretta, Gianni Profeta, Dario Daghero, Renato S. Gonnelli

Abstract: Hydrogen (H) plays a key role in the near-to-room temperature superconductivity of hydrides at megabar pressures. This suggests that H do** could have similar effects on the electronic and phononic spectra of materials at ambient pressure as well. Here, we demonstrate the non-volatile control of the electronic ground state of titanium diselenide (1T-TiSe$_2$) via ionic liquid gating-driven H int… ▽ More Hydrogen (H) plays a key role in the near-to-room temperature superconductivity of hydrides at megabar pressures. This suggests that H do** could have similar effects on the electronic and phononic spectra of materials at ambient pressure as well. Here, we demonstrate the non-volatile control of the electronic ground state of titanium diselenide (1T-TiSe$_2$) via ionic liquid gating-driven H intercalation. This protonation induces a superconducting phase, observed together with a charge-density wave through most of the phase diagram, with nearly do**-independent transition temperatures. The H-induced superconducting phase is possibly gapless-like and multi-band in nature, in contrast with those induced in TiSe$_2$ via copper, lithium, and electrostatic do**. This unique behavior is supported by ab initio calculations showing that high concentrations of H dopants induce a full reconstruction of the bandstructure, although with little coupling between electrons and high-frequency H phonons. Our findings provide a promising approach for engineering the ground state of transition metal dichalcogenides and other layered materials via gate-controlled protonation. △ Less

Submitted 5 August, 2023; v1 submitted 25 May, 2022; originally announced May 2022.

Comments: Main text: 13 pages, 5 figures; Supplementary: 12 pages, 12 figures

Journal ref: Commun. Phys. 6, 202 (2023)

Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes

Authors: G. Ciampalini, C. V. Blaga. N. Tappy, S. Pezzini, Watanabe, Taniguchi, F Bianco, S. Roddaro, A. Fontcuberta i Morral, F. Fabbri

Abstract: Recently hBN has become an interesting platform for quantum optics due to the peculiar defect-related luminescence properties. Concomitantly, hBN was established as the ideal insulating support for realizing 2D materials device, where, on the contrary, defects can affect the device performance. In this work, we study the light emission properties of hBN flakes obtained by mechanical exfoliation wi… ▽ More Recently hBN has become an interesting platform for quantum optics due to the peculiar defect-related luminescence properties. Concomitantly, hBN was established as the ideal insulating support for realizing 2D materials device, where, on the contrary, defects can affect the device performance. In this work, we study the light emission properties of hBN flakes obtained by mechanical exfoliation with particular focus on extended defects generated in the process. In particular, we tackle different issues as the light emission in hBN flakes of different thicknesses in the range of hundreds of nm, revealing a higher concentration of deep level emission in thinner area of the flake. We recognize the effect of crystal deformation in some areas of the flake with an important blue-shift (130 meV) of the room temperature near band edge emission of hBN and the concurrent presence of a novel emission at 2.36 eV related to the formation of array of dislocations. We studied the light emission properties by means of cathodoluminescence and sub-bandgap excitation photoluminescence of thickness steps with different crystallographic orientations, revealing the presence of different concentration of radiative centers. CL map** allows to detect buried thickness steps, invisible to the SEM and AFM morphological analysis. △ Less

Submitted 22 March, 2022; originally announced March 2022.

Comments: 27 pages, 6 figures, 1 table

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

Authors: Gaia Ciampalini, Filippo Fabbri, Guido Menichetti, Luca Buoni, Simona Pace, Vaidotas Mišeikis, Alessandro Pitanti, Dario Pisignano, Camilla Coletti, Alessandro Tredicucci, Stefano Roddaro

Abstract: We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photolum… ▽ More We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photoluminescence spectroscopies. Transconductance curves of MoS2 are compared with the current-voltage characteristics of graphene contact stripes, revealing a significant suppression of transport on the n-side of the transconductance curve. Based on ab-initio modeling, the effect is understood in terms of trap** by sulfur vacancies, which counter-intuitively depends on the field-effect, even though the graphene contact layer is positioned between the backgate and the MoS2 channel. △ Less

Submitted 19 January, 2022; v1 submitted 4 August, 2021; originally announced August 2021.

Electron localization in periodically strained graphene

Authors: Davide Giambastiani, Francesco Colangelo, Alessandro Tredicucci, Stefano Roddaro, Alessandro Pitanti

Abstract: Pseudo-magnetic field (PMF) in deformed graphene has been proposed as a promising and flexible method to quantum-confine electronic states and create gaps in the local density of states. Motivated by this perspective, we numerically analyze various different configurations leading to electronic localization and band flattening in periodically strained graphene. In particular, we highlight the exis… ▽ More Pseudo-magnetic field (PMF) in deformed graphene has been proposed as a promising and flexible method to quantum-confine electronic states and create gaps in the local density of states. Motivated by this perspective, we numerically analyze various different configurations leading to electronic localization and band flattening in periodically strained graphene. In particular, we highlight the existence of a fine structure in the pseudo-Landau levels confined in large-PMF regions, the emergence of states confined to PMF nodes as well as of snake-like orbits. In our paper, we further analyze the importance of the relative rotation and asymmetry of the strain lattice with respect to the atomic lattice and show how it can be used to modulate the PMF periodicity and to create localized orbits far from the strain points. Possible implementations and applications of the simulated structures are discussed. △ Less

Submitted 16 July, 2021; originally announced July 2021.

Electrostatic field-driven supercurrent suppression in ionic-gated metallic Josephson nanotransistors

Authors: Federico Paolucci, Francesco Crisà, Giorgio De Simoni, Lennart Bours, Claudio Puglia, Elia Strambini, Stefano Roddaro, Francesco Giazotto

Abstract: Recent experiments have shown the possibility to tune the electron transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between intense electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: unconventional electric field-effect or qu… ▽ More Recent experiments have shown the possibility to tune the electron transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between intense electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: unconventional electric field-effect or quasiparticle injection. By realizing ionic-gated Josephson field-effect nanotransistors (IJoFETs), we provide the conclusive evidence of electrostatic field-driven control of the supercurrent in metallic nanosized superconductors. Our Nb IJoFETs show bipolar giant suppression of the superconducting critical current up to $\sim45\%$ with negligible variation of both the critical temperature and the normal-state resistance, in a setup where both overheating and charge injection are impossible. The microscopic explanation of these results calls upon a novel theory able to describe the non-trivial interaction of static electric fields with conventional superconductivity. △ Less

Submitted 5 July, 2021; v1 submitted 2 July, 2021; originally announced July 2021.

Comments: 9 pages, 6 figures

Journal ref: Nano Lett. 21, 10309-10314 (2021)

A Roadmap for Controlled and Efficient n-type Do** of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy

Authors: Marta Orrù, Eva Repiso, Stefania Carapezzi, Alex Henning, Stefano Roddaro, Alfonso Franciosi, Yossi Rosenwaks, Anna Cavallini, Faustino Martelli, Silvia Rubini

Abstract: N-type do** of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier density as high as 1020 electron/cm3 by self-assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of… ▽ More N-type do** of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier density as high as 1020 electron/cm3 by self-assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of highly doped nanowires are extracted through a combination of transport measurement and Kelvin probe force microscopy analysis in single-wire field-effect devices. Low-temperature photoluminescence is used to characterize the Te-doped nanowires over several orders of magnitude of the impurity concentration. The combined use of those techniques allows the precise definition of the growth conditions required for effective Te incorporation. △ Less

Submitted 9 April, 2021; originally announced April 2021.

Journal ref: Advanced Functional Materials 2016

Stress-strain in electron-beam activated polymeric micro-actuators

Authors: Davide Giambastiani, Fabio Dispinzeri, Francesco Colangelo, Stiven Forti, Camilla Coletti, Alessandro Tredicucci, Alessandro Pitanti, Stefano Roddaro

Abstract: Actuation of thin polymeric films via electron irradiation is a promising avenue to realize devices based on strain engineered two dimensional (2D) materials. Complex strain profiles demand a deep understanding of the mechanics of the polymeric layer under electron irradiation; in this article we report a detailed investigation on electron-induced stress on poly-methyl-methacrylate (PMMA) thin fil… ▽ More Actuation of thin polymeric films via electron irradiation is a promising avenue to realize devices based on strain engineered two dimensional (2D) materials. Complex strain profiles demand a deep understanding of the mechanics of the polymeric layer under electron irradiation; in this article we report a detailed investigation on electron-induced stress on poly-methyl-methacrylate (PMMA) thin film material. After an assessment of stress values using a method based on dielectric cantilevers, we directly investigate the lateral shrinkage of PMMA patterns on epitaxial graphene, which reveals a universal behavior, independent of the electron acceleration energy. By knowing the stress-strain curve, we finally estimate an effective Young's modulus of PMMA on top of graphene which is a relevant parameter for PMMA based electron-beam lithography and strain engineering applications. △ Less

Submitted 5 July, 2020; originally announced July 2020.

Programmable quantum Hall bisector: towards a novel resistance standard for quantum metrology

Authors: Zahra Sadre Momtaz, Stefan Heun, Giorgio Biasiol, Stefano Roddaro

Abstract: We demonstrate a programmable quantum Hall circuit that implements a novel iterative voltage bisection scheme and allows obtaining any binary fraction $(k/2^n)$ of the fundamental resistance quantum $R_K/2=h/2e^2$. The circuit requires a number $n$ of bisection stages that only scales logarithmically with the precision of the fraction. The value of $k$ can be set to any integer between 1 and… ▽ More We demonstrate a programmable quantum Hall circuit that implements a novel iterative voltage bisection scheme and allows obtaining any binary fraction $(k/2^n)$ of the fundamental resistance quantum $R_K/2=h/2e^2$. The circuit requires a number $n$ of bisection stages that only scales logarithmically with the precision of the fraction. The value of $k$ can be set to any integer between 1 and $2^n$ by proper gate configuration. The architecture exploits gate-controlled routing, mixing and equilibration of edge modes of robust quantum Hall states. The device does not contain {\em any} internal ohmic contact potentially leading to spurious voltage drops. Our scheme addresses key critical aspects of quantum Hall arrays of resistance standards, which are today widely studied and used to create custom calibration resistances. The approach is demonstrated in a proof-of-principle two-stage bisection circuit built on a high-mobility GaAs/AlGaAs heterostructure operating at a temperature of $260\,{\rm mK}$ and a magnetic field of $4.1\,{\rm T}$. △ Less

Submitted 22 March, 2020; originally announced March 2020.

Comments: 7 pages, 5 figures, plus SI

Journal ref: Phys. Rev. Applied 14, 024059 (2020)

Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

Authors: Zahra Sadre Momtaz, Stefano Servino, Valeria Demontis, Valentina Zannier, Daniele Ercolani, Francesca Rossi, Francesco Rossella, Lucia Sorba, Fabio Beltram, Stefano Roddaro

Abstract: We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low f… ▽ More We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the electron orbital. Transmission rates versus filling are further modified by acting on the radial configuration of the orbitals by means of electrostatic gating, and the barrier transparency for the various orbitals is found to evolve as expected from numerical simulations. The possibility to exploit this mechanism to achieve a controlled continuous tuning of the tunneling rate of an individual Coulomb blockade resonance is discussed. △ Less

Submitted 1 February, 2020; v1 submitted 22 November, 2019; originally announced November 2019.

Comments: 7 pages, 5 figures, plus SI

Journal ref: Nano Lett. 2020, 20, 3, 1693-1699

Investigation of InAs based devices for topological applications

Authors: Matteo Carrega, Stefano Guiducci, Andrea Iorio, Lennart Bours, Elia Strambini, Giorgio Biasiol, Mirko Rocci, Valentina Zannier, Lucia Sorba, Fabio Beltram, Stefano Roddaro, Francesco Giazotto, Stefan Heun

Abstract: Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former,… ▽ More Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin-orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to T_c~8K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin-orbit coherence length or supercurrent amplitude. △ Less

Submitted 26 September, 2019; originally announced September 2019.

Comments: 6 pages, 5 figures (Proceeding of the SPIE conference)

Journal ref: Spintronics XII, Proc. of SPIE Vol. 11090, 110903Z (2019)

Going beyond copper: wafer-scale synthesis of graphene on sapphire

Authors: N. Mishra, S. Forti, F. Fabbri, L. Martini, C. McAleese, B. Conran, P. R. Whelan, A. Shivayogimath, L. Buß, J. Falta, I. Aliaj, S. Roddaro, J. I. Flege, P. Bøggild, K. B. K. Teo, C. Coletti

Abstract: The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-cataly… ▽ More The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, we demonstrate a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapour deposition (CVD). We identify via low energy electron diffraction (LEED), low energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) measurements the Al-rich reconstruction root31R9 of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm2/Vs. We scale up the process to 4-inch and 6-inch wafer sizes and demonstrate that metal contamination levels are within the limits for back-end-of-line (BEOL) integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis. △ Less

Submitted 2 July, 2019; originally announced July 2019.

Comments: 15 main text pages, 4 main text figures, 13 supplementary information pages, 12 supplementary figures, 3 supplementary tables

Journal ref: Small, Volume15, Issue50 December 13, 2019 1904906

Electron cooling with graphene-insulator-superconductor tunnel junctions and applications to fast bolometry

Authors: Francesco Vischi, Matteo Carrega, Alessandro Braggio, Federico Paolucci, Federica Bianco, Stefano Roddaro, Francesco Giazotto

Abstract: Electronic cooling in hybrid normal metal-insulator-superconductor junctions is a promising technology for the manipulation of thermal loads in solid state nanosystems. One of the main bottlenecks for efficient electronic cooling is the electron-phonon coupling, as it represents a thermal leakage channel to the phonon bath. Graphene is a two-dimensional material that exhibits a weaker electron-pho… ▽ More Electronic cooling in hybrid normal metal-insulator-superconductor junctions is a promising technology for the manipulation of thermal loads in solid state nanosystems. One of the main bottlenecks for efficient electronic cooling is the electron-phonon coupling, as it represents a thermal leakage channel to the phonon bath. Graphene is a two-dimensional material that exhibits a weaker electron-phonon coupling compared to standard metals. For this reason, we study the electron cooling in graphene-based systems consisting of a graphene sheet contacted by two insulator/superconductor junctions. We show that, by properly biasing the graphene, its electronic temperature can reach base values lower than those achieved in similar systems based on metallic ultra-thin films. Moreover, the lower electron-phonon coupling is mirrored in a lower heat power pumped into the superconducting leads, thus avoiding their overheating and preserving the cooling mechanisms. Finally, we analyze the possible application of cooled graphene as a bolometric radiation sensor. We study its main figures of merit, i.e. responsivity, noise equivalent power and response time. In particular, we show that the built-in electron refrigeration allows reaching a responsivity of the order of 50 nA/pW and a noise equivalent power of order of $\rm 10^{-18}\, W\, Hz^{-1/2}$ while the response speed is about 10 ns, corresponding to a thermal bandwidth in the order of 20MHz. △ Less

Submitted 6 May, 2020; v1 submitted 26 June, 2019; originally announced June 2019.

Comments: 19 pages, 9 figures

Journal ref: Phys. Rev. Applied 13, 054006 (2020)

Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots

Authors: Domenic Prete, Paolo Andrea Erdman, Valeria Demontis, Valentina Zannier, Daniele Ercolani, Lucia Sorba, Fabio Beltram, Francesco Rossella, Fabio Taddei, Stefano Roddaro

Abstract: We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely o… ▽ More We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely on the estimate of co-tunnelling contributions since electronic thermal transport is dominated by multi-level heat transport. By taking into account two spin-degenerate energy levels we are able to evaluate the electronic thermal conductance K and investigate the evolution of the electronic figure of merit ZT as a function of the quantum dot configuration and demonstrate ZT ~ 35 at 30 K, corresponding to an electronic effciency at maximum power close to the Curzon- Ahlborn limit. △ Less

Submitted 16 March, 2019; originally announced March 2019.

Comments: 7 pages, 4 figures

Journal ref: Nano Lett. 2019, 19, 5, 3033-3039

Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure

Authors: Francesco Colangelo, Andrea Morandi, Stiven Forti, Filippo Fabbri, Camilla Coletti, Flavia Viola Di Girolamo, Alberto Di Lieto, Mauro Tonelli, Alessandro Tredicucci, Alessandro Pitanti, Stefano Roddaro

Abstract: The control of the local strain profile in 2D materials offers an invaluable tool for tailoring the electronic and photonic properties of solid-state devices. In this paper, we demonstrate a local engineering of the exciton photoluminescence (PL) energy of monolayer tungsten disulfide (WS2) by means of strain. We apply a local uniaxial stress to WS2 by exploiting electron-beam patterned and actuat… ▽ More The control of the local strain profile in 2D materials offers an invaluable tool for tailoring the electronic and photonic properties of solid-state devices. In this paper, we demonstrate a local engineering of the exciton photoluminescence (PL) energy of monolayer tungsten disulfide (WS2) by means of strain. We apply a local uniaxial stress to WS2 by exploiting electron-beam patterned and actuated polymeric micrometric artificial muscles (MAMs), which we implement onto monolithic synthetic WS2/graphene heterostructures. We show that MAMs are able to induce an in-plane stress to the top WS2 layer of the van der Waals heterostructure and that the latter can slide on the graphene underneath with negligible friction. As a proof of concept for the local strain-induced PL shift experiments, we exploit a two-MAM configuration in order to apply uniaxial tensile stress on well-defined micrometric regions of WS2. Remarkably, our architecture does not require the adoption of fragile suspended microstructures. We observe a spatial modulation of the excitonic PL energy of the WS2 monolayers under stress, which agrees with the expected strain profile and attains a maximum redshift of about 40 meV at the maximum strain intensity point. After the actuation, a time-dependent PL blueshift is observed in agreement with the viscoelastic properties of the polymeric MAMs. Our approach enables inducing local and arbitrary deformation profiles and circumvents some key limitations and technical challenges of alternative strain engineering methods requiring the 2D material transfer and production of suspended membranes. △ Less

Submitted 6 November, 2019; v1 submitted 15 March, 2019; originally announced March 2019.

Comments: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in APL and may be found at https://aip.scitation.org/doi/10.1063/1.5122262

Journal ref: Appl. Phys. Lett. 115, 183101 (2019); https://aip.scitation.org/doi/10.1063/1.5122262

Strategy for accurate thermal biasing at the nanoscale

Authors: Artem Denisov, Evgeny Tikhonov, Stanislau Piatrusha, Ivan Khrapach, Francesco Rossella, Mirko Rocci, Lucia Sorba, Stefano Roddaro, Vadim Khrapai

Abstract: We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing techniqu… ▽ More We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing technique in InAs nanowire based devices, that a nanoscale metallic constriction on a SiO2 substrate acts like a diffusive conductor with negligible electron-phonon relaxation and non-ideal leads. The non-universal impact of the leads on the achieved thermal bias -- which depends on their dimensions, shape and material composition -- is hard to minimize, but is possible to accurately calibrate in a properly designed nano-device. Our results allow to reduce the issue of the thermal bias calibration to the knowledge of the heater resistance and pave the way for accurate thermoelectric or similar measurements at the nanoscale. △ Less

Submitted 20 March, 2020; v1 submitted 16 December, 2018; originally announced December 2018.

Comments: revised version of a submitted manuscript

Journal ref: Nanotechnology 31, 324004 (2020)

Vectorial control of the spin-orbit interaction in suspended InAs nanowires

Authors: Andrea Iorio, Mirko Rocci, Lennart Bours, Matteo Carrega, Valentina Zannier, Lucia Sorba, Stefano Roddaro, Francesco Giazotto, Elia Strambini

Abstract: Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires… ▽ More Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires placed on top of a substrate which modifies the SOI vector and spoils the intrinsic symmetries of the system. In this work, we report experimental results on suspended InAs nanowires, in which the wire symmetries are fully preserved and clearly visible in transport measurements. Using a vectorial magnet, the non-trivial evolution of weak anti-localization (WAL) is tracked through all 3D space, and both the spin-orbit length $l_{SO}$ and coherence length $l_\varphi$ are determined as a function of the magnetic field magnitude and direction. Studying the angular maps of the WAL signal, we demonstrate that the average SOI within the nanowire is isotropic and that our findings are consistent with a semiclassical quasi-1D model of WAL adapted to include the geometrical constraints of the nanostructure. Moreover, by acting on properly designed side gates, we apply an external electric field introducing an additional vectorial Rashba spin-orbit component whose strength can be controlled by external means. These results give important hints on the intrinsic nature of suspended nanowire and can be interesting for in the field of spintronics as well as for the manipulation of Majorana bound states in devices based on hybrid semiconductors. △ Less

Submitted 15 November, 2018; v1 submitted 11 July, 2018; originally announced July 2018.

Comments: 13 pages, 11 figures

Journal ref: Nano Lett. 2019, 19, 2, 652-657

Gate-tunable spatial modulation of localized plasmon resonances

Authors: Andrea Arcangeli, Francesco Rossella, Andrea Tomadin, Jihua Xu, Daniele Ercolani, Lucia Sorba, Fabio Beltram, Alessandro Tredicucci, Marco Polini, Stefano Roddaro

Abstract: Nanoplasmonics exploits the coupling between light and collective electron density oscillations (plasmons) to bypass the stringent limits imposed by diffraction. This coupling enables confinement of light to sub-wavelength volumes and is usually exploited in nanostructured metals. Substantial efforts are being made at the current frontier of the field to employ electron systems in semiconducting a… ▽ More Nanoplasmonics exploits the coupling between light and collective electron density oscillations (plasmons) to bypass the stringent limits imposed by diffraction. This coupling enables confinement of light to sub-wavelength volumes and is usually exploited in nanostructured metals. Substantial efforts are being made at the current frontier of the field to employ electron systems in semiconducting and semimetallic materials since these add the exciting possibility of realizing electrically tunable and/or active nanoplasmonic devices. Here we demonstrate that a suitable design of the do** profile in a semiconductor nanowire (NW) can be used to tailor the plasmonic response and induce localization effects akin to those observed in metal nanoparticles. Moreover, by field-effect carrier modulation, we demonstrate that these localized plasmon resonances can be spatially displaced along the nanostructure body, thereby paving the way for the implementation of spatially tunable plasmonic circuits. △ Less

Submitted 4 May, 2018; originally announced May 2018.

Comments: 12 pages, 3 figures

Journal ref: Nano Lett., 2016, 16(9), pp 5688-5693

Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate

Authors: Francesco Colangelo, Vincenzo Piazza, Camilla Coletti, Stefano Roddaro, Fabio Beltram, Pasqualantonio **ue

Abstract: We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the imp… ▽ More We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolayer graphene can be achieved by tuning the bias voltage during LAO. Finally, a complete compositional characterization was achieved by scanning electron microscopy and energy dispersive spectroscopy (EDS). △ Less

Submitted 2 May, 2018; originally announced May 2018.

Comments: 6 pages, 4 figures

Journal ref: Nanotechnology 28 (2017) 105709

Classical effects in the weak-field magnetoresistance of InGaAs/InAlAs quantum wells

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, G. Biasiol, S. Roddaro, L. Sorba

Abstract: We observe an unusual behavior of the low-temperature magnetoresistance of the high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wells in weak perpendicular magnetic fields. The observed magnetoresistance is qualitatively similar to that expected for the weak localization and anti-localization but its quantity exceeds significantly the scale of the quantum corrections. The calcul… ▽ More We observe an unusual behavior of the low-temperature magnetoresistance of the high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wells in weak perpendicular magnetic fields. The observed magnetoresistance is qualitatively similar to that expected for the weak localization and anti-localization but its quantity exceeds significantly the scale of the quantum corrections. The calculations show that the obtained data can be explained by the classical effects in electron motion along the open orbits in a quasiperiodic potential relief manifested by the presence of ridges on the quantum well surface. △ Less

Submitted 22 January, 2018; originally announced January 2018.

Journal ref: JETP Letters 107, 320 (2018)

Stretching graphene using polymeric micro-muscles

Authors: Francesco Colangelo, Alessandro Pitanti, Vaidotas Mišeikis, Camilla Coletti, Pasqualantonio **ue, Dario Pisignano, Fabio Beltram, Alessandro Tredicucci, Stefano Roddaro

Abstract: The control of strain in two-dimensional materials opens exciting perspectives for the engineering of their electronic properties. While this expectation has been validated by artificial-lattice studies, it remains elusive in the case of atomic lattices. Remarkable results were obtained on nanobubbles and nano-wrinkles, or using scanning probes; microscale strain devices were implemented exploitin… ▽ More The control of strain in two-dimensional materials opens exciting perspectives for the engineering of their electronic properties. While this expectation has been validated by artificial-lattice studies, it remains elusive in the case of atomic lattices. Remarkable results were obtained on nanobubbles and nano-wrinkles, or using scanning probes; microscale strain devices were implemented exploiting deformable substrates or external loads. These devices lack, however, the flexibility required to fully control and investigate arbitrary strain profiles. Here, we demonstrate a novel approach making it possible to induce strain in graphene using polymeric micrometric artificial muscles (MAMs) that contract in a controllable and reversible way under an electronic stimulus. Our method exploits the mechanical response of poly-methyl-methacrylate (PMMA) to electron-beam irradiation. Inhomogeneous anisotropic strain and out-of-plane deformation are demonstrated and studied by Raman, scanning-electron and atomic-force microscopy. These can all be easily combined with the present device architecture. The flexibility of the present method opens new opportunities for the investigation of strain and nanomechanics in two-dimensional materials. △ Less

Submitted 27 November, 2017; originally announced November 2017.

Journal ref: Colangelo F. et al., 2D Materials, 5 045032 (2018)

Perfecting the Growth and Transfer of Large Single-Crystal CVD Graphene: A Platform Material for Optoelectronic Applications

Authors: Vaidotas Miseikis, Shaohua Xiang, Stefano Roddaro, Stefan Heun, Camilla Coletti

Abstract: In this work we demonstrate the synthesis of millimetre-sized single-crystals of graphene, achievable in a commercially-available cold-wall CVD reactor, and several different approaches to transfer it from the growth substrate to a target substrate of choice. We confirm the high crystal quality of this material using various characterisation techniques, including optical and scanning electron micr… ▽ More In this work we demonstrate the synthesis of millimetre-sized single-crystals of graphene, achievable in a commercially-available cold-wall CVD reactor, and several different approaches to transfer it from the growth substrate to a target substrate of choice. We confirm the high crystal quality of this material using various characterisation techniques, including optical and scanning electron microscopy as well as Raman spectroscopy. By performing field effect and quantum Hall effect measurements we demonstrate that the electronic properties of such single-crystals are comparable to those of ideal mechanically exfoliated flakes of graphene. Several applications of this high-quality material are also reviewed. △ Less

Submitted 14 November, 2017; originally announced November 2017.

Comments: 7 pages, 8 figures

Journal ref: In: Morandi V., Ottaviano L. (eds) GraphITA. Carbon Nanostructures. Springer, Cham (2017)

InAs nanowire superconducting tunnel junctions: spectroscopy, thermometry and nanorefrigeration

Authors: Jaakko Mastomäki, Stefano Roddaro, Mirko Rocci, Valentina Zannier, Daniele Ercolani, Lucia Sorba, Ilari J. Maasilta, Nadia Ligato, Antonio Fornieri, Elia Strambini, Francesco Giazotto

Abstract: We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with… ▽ More We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with the BCS theoretical expectations of a superconducting tunnel junction. The studied devices combine small-scale tunnel contacts working as thermometers as well as larger electrodes that provide a proof-of-principle active {\em cooling} of the electron distribution in the nanowire. A peak refrigeration of about $δT = 10\,{\rm mK}$ is achieved at a bath temperature $T_{bath}\approx250-350\,{\rm mK}$ in our prototype devices. This method opens important perspectives for the investigation of thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration. △ Less

Submitted 8 November, 2016; originally announced November 2016.

Comments: 6 pages, 4 color figures

Journal ref: Nano Research (2017)

Inter-Edge Backscattering in Buried Split-Gate-Defined Graphene Quantum Point Contacts

Authors: Shaohua Xiang, Alina Mrenca-Kolasinska, Vaidotas Miseikis, Stefano Guiducci, Krzysztof Kolasinski, Camilla Coletti, Bartlomiej Szafran, Fabio Beltram, Stefano Roddaro, Stefan Heun

Abstract: Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system subject to a strong magnetic field. In the present work, we demonstrate a buried split-gate architecture and use it to control electron conduction in large-scale si… ▽ More Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system subject to a strong magnetic field. In the present work, we demonstrate a buried split-gate architecture and use it to control electron conduction in large-scale single-crystal monolayer graphene grown by chemical vapor deposition. The control of the edge trajectories is demonstrated by the observation of various fractional quantum resistances, as a result of a controllable inter-edge scattering. Experimental data are successfully modeled both numerically and within the Landauer-Buettiker formalism. Our architecture is particularly promising and unique in view of the investigation of quantum transport via scanning probe microscopy, since graphene constitutes the topmost layer of the device. For this reason, it can be approached and perturbed by a scanning probe down to the limit of mechanical contact. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 94, 155446 (2016)

Dephasing in strongly anisotropic black phosphorus

Authors: N. Hemsworth, V. Tayari, F. Telesio, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, S. Heun

Abstract: Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which characteristic scattering lengths could be inferred. The dephasing length $L_φ$ was found to increase linearly with increasing hole density attaining… ▽ More Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which characteristic scattering lengths could be inferred. The dephasing length $L_φ$ was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of approximately $10^{13} cm^{-2}$ inferred from the Hall effect. The temperature dependence of $L_φ$ was also investigated and above 1~K, it was found to decrease weaker than the $L_φ\propto T^{-\frac{1}{2}}$ dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in other quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes. We attribute our result to the crystal structure of bP which host a `puckered' honeycomb lattice forming a strongly anisotropic medium △ Less

Submitted 15 August, 2016; v1 submitted 28 July, 2016; originally announced July 2016.

Journal ref: Phys. Rev. B 94, 245404 (2016)

Anisotropic straining of graphene using micropatterned SiN membranes

Authors: Fabiana Francesca Settembrini, Francesco Colangelo, Alessandro Pitanti, Vaidotas Miseikis, Camilla Coletti, Guido Menichetti, Renato Colle, Giuseppe Grosso, Alessandro Tredicucci, Stefano Roddaro

Abstract: We use micro-Raman spectroscopy to study strain profiles in graphene monolayers suspended over SiN membranes micropatterned with holes of non-circular geometry. We show that a uniform differential pressure load $ΔP$ over elliptical regions of free-standing graphene yields measurable deviations from hydrostatic strain conventionally observed in radially-symmetric microbubbles. The top hydrostatic s… ▽ More We use micro-Raman spectroscopy to study strain profiles in graphene monolayers suspended over SiN membranes micropatterned with holes of non-circular geometry. We show that a uniform differential pressure load $ΔP$ over elliptical regions of free-standing graphene yields measurable deviations from hydrostatic strain conventionally observed in radially-symmetric microbubbles. The top hydrostatic strain $\bar{\varepsilon}$ we observe is estimated to be $\approx0.7\%$ for $ΔP = 1\,{\rm bar}$ in graphene clamped to elliptical SiN holes with axis $40$ and $20\,{\rm μm}$. In the same configuration, we report a $G_\pm$ splitting of $10\,{\rm cm^{-1}}$ which is in good agreement with the calculated anisotropy $Δ\varepsilon \approx 0.6\%$ for our device geometry. Our results are consistent with the most recent reports on the Grüneisen parameters. Perspectives for the achievement of arbitrary strain configurations by designing suitable SiN holes and boundary clam** conditions are discussed. △ Less

Submitted 22 June, 2016; originally announced June 2016.

Comments: 8 pages, 6 figure (including SI)

Local noise in a diffusive conductor

Authors: E. S. Tikhonov, D. V. Shovkun, D. Ercolani, F. Rossella, M. Rocci, L. Sorba, S. Roddaro, V. S. Khrapai

Abstract: The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermogra… ▽ More The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermography. Beyond time-averaged properties, valuable information can also be gained from spontaneous fluctuations of current (noise). From these perspective, however, a fundamental constraint is set by current conservation, which makes noise a characteristic of the whole conductor, rather than some part of it. Here we demonstrate how to remove this obstacle and pick up a local noise temperature of a current biased diffusive conductor with the help of a miniature noise probe. This approach is virtually noninvasive and extends primary local measurements towards strongly non-equilibrium regimes. △ Less

Submitted 15 July, 2016; v1 submitted 25 April, 2016; originally announced April 2016.

Comments: minor revision, accepted in Scientific Reports

Journal ref: Scientific Reports 6, Article number: 30621 (2016)

Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis

Authors: Domenico Montemurro, Daniela Stornaiuolo, Davide Massarotti, Daniele Ercolani, Lucia Sorba, Fabio Beltram, Francesco Tafuri, Stefano Roddaro

Abstract: We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis that allows to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence d… ▽ More We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis that allows to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence disorder and the orientation of the Rashba vector. The relevance of this approach in view of the implementation of Josephson junctions based on High-Temperature Superconductors is discussed. △ Less

Submitted 12 April, 2016; originally announced April 2016.

Comments: 8 pages, 5 figures

Journal ref: Nanotechnology. 2015 Sep 25;26(38):385302

Low-temperature quantum transport in CVD-grown single crystal graphene

Authors: Shaohua Xiang, Vaidotas Miseikis, Luca Planat, Stefano Guiducci, Stefano Roddaro, Camilla Coletti, Fabio Beltram, Stefan Heun

Abstract: Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present a detailed study on the electronic properties of high-quality single crystal monolayer graphene. The graphene is grown by CVD on copper using a cold-wall react… ▽ More Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present a detailed study on the electronic properties of high-quality single crystal monolayer graphene. The graphene is grown by CVD on copper using a cold-wall reactor and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the measured single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples is located at back-gate voltages of less than 10V, and their mobility can reach 11000 cm2/Vs. More than 12 flat and discernible half-integer quantum Hall plateaus have been observed in high magnetic field on both the electron and hole side of the Dirac point. At low magnetic field, the magnetoresistance shows a clear weak localization peak. Using the theory of McCann et al., we find that the inelastic scattering length is larger than 1 μm in these samples even at the charge neutrality point. △ Less

Submitted 24 March, 2016; originally announced March 2016.

Journal ref: Nano Research 2016, 9, 1823-1830

Noise thermometry applied to thermoelectric measurements in InAs nanowires

Authors: E. S. Tikhonov, D. V. Shovkun, V. S. Khrapai, D. Ercolani, F. Rossella, M. Rocci, L. Sorba, S. Roddaro

Abstract: We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike in previous approaches, we make use of a primary electronic nois… ▽ More We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike in previous approaches, we make use of a primary electronic noise thermometry to calibrate a thermal bias across the NW. In particular, this enables us to apply a contact heating scheme, which is much more efficient in creating the thermal bias as compared to conventional substrate heating. The measured thermoelectric Seebeck coefficient exhibits strong mesoscopic fluctuations in dependence on the back-gate voltage that is used to tune the NW carrier density. We analyze the transport and thermoelectric data in terms of approximate Mott's thermopower relation and to evaluate a gate-voltage to Fermi energy conversion factor. △ Less

Submitted 29 February, 2016; originally announced February 2016.

Journal ref: Semicond. Sci. Technol. 31 104001 (2016)

Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems

Authors: I. Aliaj, I. Torre, V. Miseikis, E. di Gennaro, A. Sambri, A. Gamucci, C. Coletti, F. Beltram, F. M. Granozio, M. Polini, V. Pellegrini, S. Roddaro

Abstract: We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed fo… ▽ More We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic depletion and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly-coupled bilayer systems is discussed. △ Less

Submitted 24 February, 2016; originally announced February 2016.

Comments: 10 pages, 3 figures

Journal ref: APL Mater. 4, 066101 (2016)

Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions

Authors: J. Paajaste, E. Strambini, M. Amado, S. Roddaro, P. San-Jose, R. Aguado, F. S. Bergeret, D. Ercolani, L. Sorba, F. Giazotto

Abstract: The Josephson effect is a fundamental quantum phenomenon consisting in the appearance of a dissipationless supercurrent in a weak link between two superconducting (S) electrodes. While the mechanism leading to the Josephson effect is quite general, i.e., Andreev reflections at the interface between the S electrodes and the weak link, the precise physical details and topology of the junction drasti… ▽ More The Josephson effect is a fundamental quantum phenomenon consisting in the appearance of a dissipationless supercurrent in a weak link between two superconducting (S) electrodes. While the mechanism leading to the Josephson effect is quite general, i.e., Andreev reflections at the interface between the S electrodes and the weak link, the precise physical details and topology of the junction drastically modify the properties of the supercurrent. Specifically, a strong enhancement of the critical supercurrent $I_C$ is expected to occur when the topology of the junction allows the emergence of Majorana bound states. Here we report charge transport measurements in mesoscopic Josephson junctions formed by InAs nanowires and Ti/Al superconducting leads. Our main observation is a colossal enhancement of the critical supercurrent induced by an external magnetic field applied perpendicular to the substrate. This striking and anomalous supercurrent enhancement cannot be ascribed to any known conventional phenomenon existing in Josephson junctions including, for instance, Fraunhofer-like diffraction or a $π$-state behavior. We also investigate an unconventional model related to inhomogenous Zeeman field caused by magnetic focusing, and note that it can not account for the observed behaviour. Finally, we consider these results in the context of topological superconductivity, and show that the observed $I_C$ enhancement is compatible with a magnetic field-induced topological transition of the junction. △ Less

Submitted 12 January, 2016; originally announced January 2016.

Comments: 9 pages, 4 color figures

Journal ref: Nat. Commun. (2017)

Nanoscale spin rectifiers controlled by the Stark effect

Authors: Francesco Rossella, Andrea Bertoni, Daniele Ercolani, Massimo Rontani, Lucia Sorba, Fabio Beltram, Stefano Roddaro

Abstract: The control of orbital and spin state of single electrons is a key ingredient for quantum information processing, novel detection schemes, and, more generally, is of much relevance for spintronics. Coulomb and spin blockade (SB) in double quantum dots (DQDs) enable advanced single-spin operations that would be available even for room-temperature applications for sufficiently small devices. To date… ▽ More The control of orbital and spin state of single electrons is a key ingredient for quantum information processing, novel detection schemes, and, more generally, is of much relevance for spintronics. Coulomb and spin blockade (SB) in double quantum dots (DQDs) enable advanced single-spin operations that would be available even for room-temperature applications for sufficiently small devices. To date, however, spin operations in DQDs were observed at sub-Kelvin temperatures, a key reason being that scaling a DQD system while retaining an independent field-effect control on the individual dots is very challenging. Here we show that quantum-confined Stark effect allows an independent addressing of two dots only 5 nm apart with no need for aligned nanometer-size local gating. We thus demonstrate a scalable method to fully control a DQD device, regardless of its physical size. In the present implementation we show InAs/InP nanowire (NW) DQDs that display an experimentally detectable SB up to 10 K. We also report and discuss an unexpected re-entrant SB lifting as a function magnetic-field intensity. △ Less

Submitted 9 December, 2015; originally announced December 2015.

Journal ref: Nature Nanotechnology 9, 997-1001 (2014)

Nanoscale Mach-Zehnder interferometer with spin-resolved quantum Hall edge states

Authors: Biswajit Karmakar, Davide Venturelli, Luca Chirolli, Vittorio Giovannetti, Rosario Fazio, Stefano Roddaro, Loren N. Pfeiffer, Ken W. West, Fabio Taddei, Vittorio Pellegrini

Abstract: We realize a nanoscale-area Mach-Zehnder interferometer with co-propagating quantum Hall spin-resolved edge states and demonstrate the persistence of gate-controlled quantum interference oscillations, as a function of an applied magnetic field, at relatively large temperatures. Arrays of top-gate magnetic nanofingers are used to induce a resonant charge transfer between the pair of spin-resolved e… ▽ More We realize a nanoscale-area Mach-Zehnder interferometer with co-propagating quantum Hall spin-resolved edge states and demonstrate the persistence of gate-controlled quantum interference oscillations, as a function of an applied magnetic field, at relatively large temperatures. Arrays of top-gate magnetic nanofingers are used to induce a resonant charge transfer between the pair of spin-resolved edge states. To account for the pattern of oscillations measured as a function of magnetic field and gate voltage, we have developed a simple theoretical model which satisfactorily reproduces the data. △ Less

Submitted 4 November, 2015; v1 submitted 15 September, 2015; originally announced September 2015.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 92, 195303 (2015)

Pb/InAs nanowire Josephson junction with high critical current and magnetic flux focusing

Authors: J. Paajaste, M. Amado, S. Roddaro, F. S. Bergeret, D. Ercolani, L. Sorba, F. Giazotto

Abstract: We have studied mesoscopic Josephson junctions formed by highly $n$-doped InAs nanowires and superconducting Ti/Pb source and drain leads. The current-voltage properties of the system are investigated by varying temperature and external out-of-plane magnetic field. Superconductivity in the Pb electrodes persists up to $ \sim 7$ K and with magnetic field values up to 0.4 T. Josephson coupling at ze… ▽ More We have studied mesoscopic Josephson junctions formed by highly $n$-doped InAs nanowires and superconducting Ti/Pb source and drain leads. The current-voltage properties of the system are investigated by varying temperature and external out-of-plane magnetic field. Superconductivity in the Pb electrodes persists up to $ \sim 7$ K and with magnetic field values up to 0.4 T. Josephson coupling at zero backgate voltage is observed up to 4.5 K and the critical current is measured to be as high as 615 nA. The supercurrent suppression as a function of the magnetic field reveals a diffraction pattern that is explained by a strong magnetic flux focusing provided by the superconducting electrodes forming the junction. △ Less

Submitted 25 March, 2015; v1 submitted 4 November, 2014; originally announced November 2014.

Comments: 6 pages, 5 color figures

Journal ref: Nano Lett. 15, 3, 1803-1808 (2015)

Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene

Authors: Andrea Iagallo, Shinichi Tanabe, Stefano Roddaro, Makoto Takamura, Yoshiaki Sekine, Hiroki Hibino, Vaidotas Miseikis, Camilla Coletti, Vincenzo Piazza, Fabio Beltram, Stefan Heun

Abstract: The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure fr… ▽ More The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties. △ Less

Submitted 14 October, 2014; v1 submitted 8 October, 2014; originally announced October 2014.

Journal ref: Semicond. Sci. Technol. 30 (2015) 055007

Large thermal biasing of individual gated nanostructures

Authors: Stefano Roddaro, Daniele Ercolani, Mian Akif Safeen, Francesco Rossella, Vincenzo Piazza, Francesco Giazotto, Lucia Sorba, Fabio Beltram

Abstract: We demonstrate a novel nanoheating scheme that yields very large and uniform temperature gradients up to about 1K every 100nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated largely exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating plat… ▽ More We demonstrate a novel nanoheating scheme that yields very large and uniform temperature gradients up to about 1K every 100nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated largely exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device. △ Less

Submitted 8 January, 2014; v1 submitted 10 December, 2013; originally announced December 2013.

Comments: 6 pages, 6 figures

Giant thermovoltage in single InAs-nanowire field-effect transistors

Authors: Stefano Roddaro, Daniele Ercolani, Mian Akif Safeen, Soile Suomalainen, Francesco Rossella, Francesco Giazotto, Lucia Sorba, Fabio Beltram

Abstract: Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise map** of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between r… ▽ More Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise map** of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between room temperature and 100K$. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices. △ Less

Submitted 10 December, 2013; originally announced December 2013.

Comments: 6 pages, 4 figures

Journal ref: Nano Lett. 13, 3638 (2013)

Selective control of edge-channel trajectories by scanning gate microscopy

Authors: N. Paradiso, S. Heun, S. Roddaro, L. N. Pfeiffer, K. W. West, L. Sorba, G. Biasiol, F. Beltram

Abstract: Electronic Mach-Zehnder interferometers in the Quantum Hall (QH) regime are currently discussed for the realization of quantum information schemes. A recently proposed device architecture employs interference between two co-propagating edge channels. Here we demonstrate the precise control of individual edge-channel trajectories in quantum point contact devices in the QH regime. The biased tip of… ▽ More Electronic Mach-Zehnder interferometers in the Quantum Hall (QH) regime are currently discussed for the realization of quantum information schemes. A recently proposed device architecture employs interference between two co-propagating edge channels. Here we demonstrate the precise control of individual edge-channel trajectories in quantum point contact devices in the QH regime. The biased tip of an atomic force microscope is used as a moveable local gate to pilot individual edge channels. Our results are discussed in light of the implementation of multi-edge interferometers. △ Less

Submitted 5 December, 2013; originally announced December 2013.

Journal ref: Physica E 42, 1038 (2010)

Tuning of quantum interference in top-gated graphene on SiC

Authors: Andrea Iagallo, Shinichi Tanabe, Stefano Roddaro, Makoto Takamura, Hiroki Hibino, Stefan Heun

Abstract: We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and charge density. We perform a systematic study of the quantum corrections to the magnetoresistance due to quantum interference of quasiparticles and electron-elect… ▽ More We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and charge density. We perform a systematic study of the quantum corrections to the magnetoresistance due to quantum interference of quasiparticles and electron-electron interaction. We analyze the contribution of the different scattering mechanisms affecting the magnetotransport in the $-2.0 \times 10^{10}$ cm$^{-2}$ to $3.75 \times 10^{11}$ cm$^{-2}$ density region and find a significant influence of the charge density on the intravalley scattering time. Furthermore, we observe a modulation of the electron-electron interaction with charge density not accounted for by present theory. Our results clarify the role of quantum transport in SiC-based devices, which will be relevant in the development of a graphene-based technology for coherent electronics. △ Less

Submitted 28 November, 2013; originally announced November 2013.

Journal ref: Phys. Rev. B 88,235406 (2013)

Scanning Gate Imaging of quantum point contacts and the origin of the 0.7 Anomaly

Authors: Andrea Iagallo, Nicola Paradiso, Stefano Roddaro, Christian Reichl, Werner Wegscheider, Giorgio Biasiol, Lucia Sorba, Fabio Beltram, Stefan Heun

Abstract: The origin of the anomalous transport feature appearing at conductance G \approx 0.7 x (2e2/h) in quasi-1D ballistic devices - the so-called 0.7 anomaly - represents a long standing puzzle. Several mechanisms were proposed to explain it, but a general consensus has not been achieved. Proposed explanations are based on quantum interference, Kondo effect, Wigner crystallization, and more. A key open… ▽ More The origin of the anomalous transport feature appearing at conductance G \approx 0.7 x (2e2/h) in quasi-1D ballistic devices - the so-called 0.7 anomaly - represents a long standing puzzle. Several mechanisms were proposed to explain it, but a general consensus has not been achieved. Proposed explanations are based on quantum interference, Kondo effect, Wigner crystallization, and more. A key open issue is whether point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-1D constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems. △ Less

Submitted 4 September, 2014; v1 submitted 25 November, 2013; originally announced November 2013.

Journal ref: Nano Research 8 (2015) 948-956

Coherent edge mixing and interferometry in quantum Hall bilayers

Authors: Stefano Roddaro, Luca Chirolli, Fabio Taddei, Marco Polini, Vittorio Giovannetti

Abstract: We discuss the implementation of a beam splitter for electron waves in a quantum Hall bilayer. Our architecture exploits inter-layer tunneling to mix edge states belonging to different layers. We discuss the basic working principle of the proposed coherent edge mixer, possible interferometric implementations based on existing semiconductor-heterojunction technologies, and advantages with respect t… ▽ More We discuss the implementation of a beam splitter for electron waves in a quantum Hall bilayer. Our architecture exploits inter-layer tunneling to mix edge states belonging to different layers. We discuss the basic working principle of the proposed coherent edge mixer, possible interferometric implementations based on existing semiconductor-heterojunction technologies, and advantages with respect to canonical quantum Hall interferometers based on quantum point contacts. △ Less

Submitted 28 December, 2012; originally announced December 2012.

Comments: 11 pages, 4 figures

Journal ref: Phys. Rev. B 87, 075321 (2013)

Imaging backscattering through impurity-induced antidots in quantum Hall constrictions

Authors: Nicola Paradiso, Stefan Heun, Stefano Roddaro, Giorgio Biasiol, Lucia Sorba, Davide Venturelli, Fabio Taddei, Vittorio Giovannetti, Fabio Beltram

Abstract: We exploit the biased tip of a scanning gate microscope (SGM) to induce a controlled backscattering between counter-propagating edge channels in a wide constriction in the quantum Hall regime. We compare our detailed conductance maps with a numerical percolation model and demonstrate that conductance fluctuations observed in these devices as a function of the gate voltage originate from backscatte… ▽ More We exploit the biased tip of a scanning gate microscope (SGM) to induce a controlled backscattering between counter-propagating edge channels in a wide constriction in the quantum Hall regime. We compare our detailed conductance maps with a numerical percolation model and demonstrate that conductance fluctuations observed in these devices as a function of the gate voltage originate from backscattering events mediated by localized states pinned by potential fluctuations. Our imaging technique allows us to identify the necessary conditions for the activation of these backscattering processes and also to reconstruct the constriction confinement potential profile and the underlying disorder. △ Less

Submitted 11 September, 2012; originally announced September 2012.

Journal ref: Physical Review B 86, 085326 (2012)

Imaging fractional incompressible stripes in integer quantum Hall systems

Authors: Nicola Paradiso, Stefan Heun, Stefano Roddaro, Lucia Sorba, Fabio Beltram, Giorgio Biasiol, L. N. Pfeiffer, K. W. West

Abstract: Transport experiments provide conflicting evidence on the possible existence of fractional order within integer quantum Hall systems. In fact integer edge states sometimes behave as monolithic objects with no inner structure, while other experiments clearly highlight the role of fractional substructures. Recently developed low-temperature scanning probe techniques offer today an opportunity for a… ▽ More Transport experiments provide conflicting evidence on the possible existence of fractional order within integer quantum Hall systems. In fact integer edge states sometimes behave as monolithic objects with no inner structure, while other experiments clearly highlight the role of fractional substructures. Recently developed low-temperature scanning probe techniques offer today an opportunity for a deeper-than-ever investigation of spatial features of such edge systems. Here we use scanning gate microscopy and demonstrate that fractional features were unambiguously observed in every integer quantum Hall constriction studied. We present also an experimental estimate of the width of the fractional incompressible stripes corresponding to filling factors 1/3, 2/5, 3/5, and 2/3. Our results compare well with predictions of the edge-reconstruction theory. △ Less

Submitted 2 May, 2012; originally announced May 2012.

Journal ref: Physical Review Letters 108, 246801 (2012)

Impact of electron heating on the equilibration between quantum Hall edge channels

Authors: Nicola Paradiso, Stefan Heun, Stefano Roddaro, Lucia Sorba, Fabio Beltram, Giorgio Biasiol

Abstract: When two separately contacted quantum Hall (QH) edge channels are brought into interaction, they can equilibrate their imbalance via scattering processes. In the present work we use a tunable QH circuit to implement a junction between co-propagating edge channels whose length can be controlled with continuity. Such a variable device allows us to investigate how current-voltage characteristics evol… ▽ More When two separately contacted quantum Hall (QH) edge channels are brought into interaction, they can equilibrate their imbalance via scattering processes. In the present work we use a tunable QH circuit to implement a junction between co-propagating edge channels whose length can be controlled with continuity. Such a variable device allows us to investigate how current-voltage characteristics evolve when the junction length d is changed. Recent experiments with fixed geometry reported a significant reduction of the threshold voltage for the onset of photon emission, whose origin is still under debate. Our spatially resolved measurements reveal that this threshold shift depends on the junction length. We discuss this unexpected result on the basis of a model which demonstrates that a heating of electrons is the dominant process responsible for the observed reduction of the threshold voltage. △ Less

Submitted 12 December, 2011; originally announced December 2011.

Journal ref: Physical Review B 84, 235318 (2011)