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A Cryogenic Memristive Neural Decoder for Fault-tolerant Quantum Error Correction
Authors:
Frédéric Marcotte,
Pierre-Antoine Mouny,
Victor Yon,
Gebremedhin A. Dagnew,
Bohdan Kulchytskyy,
Sophie Rochette,
Yann Beilliard,
Dominique Drouin,
Pooya Ronagh
Abstract:
Neural decoders for quantum error correction (QEC) rely on neural networks to classify syndromes extracted from error correction codes and find appropriate recovery operators to protect logical information against errors. Despite the good performance of neural decoders, important practical requirements remain to be achieved, such as minimizing the decoding time to meet typical rates of syndrome ge…
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Neural decoders for quantum error correction (QEC) rely on neural networks to classify syndromes extracted from error correction codes and find appropriate recovery operators to protect logical information against errors. Despite the good performance of neural decoders, important practical requirements remain to be achieved, such as minimizing the decoding time to meet typical rates of syndrome generation in repeated error correction schemes, and ensuring the scalability of the decoding approach as the code distance increases. Designing a dedicated integrated circuit to perform the decoding task in co-integration with a quantum processor appears necessary to reach these decoding time and scalability requirements, as routing signals in and out of a cryogenic environment to be processed externally leads to unnecessary delays and an eventual wiring bottleneck. In this work, we report the design and performance analysis of a neural decoder inference accelerator based on an in-memory computing (IMC) architecture, where crossbar arrays of resistive memory devices are employed to both store the synaptic weights of the decoder neural network and perform analog matrix-vector multiplications during inference. In proof-of-concept numerical experiments supported by experimental measurements, we investigate the impact of TiO$_\textrm{x}$-based memristive devices' non-idealities on decoding accuracy. Hardware-aware training methods are developed to mitigate the loss in accuracy, allowing the memristive neural decoders to achieve a pseudo-threshold of $9.23\times 10^{-4}$ for the distance-three surface code, whereas the equivalent digital neural decoder achieves a pseudo-threshold of $1.01\times 10^{-3}$. This work provides a pathway to scalable, fast, and low-power cryogenic IMC hardware for integrated QEC.
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Submitted 18 July, 2023;
originally announced July 2023.
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Miniaturizing neural networks for charge state autotuning in quantum dots
Authors:
Stefanie Czischek,
Victor Yon,
Marc-Antoine Genest,
Marc-Antoine Roux,
Sophie Rochette,
Julien Camirand Lemyre,
Mathieu Moras,
Michel Pioro-Ladrière,
Dominique Drouin,
Yann Beilliard,
Roger G. Melko
Abstract:
A key challenge in scaling quantum computers is the calibration and control of multiple qubits. In solid-state quantum dots, the gate voltages required to stabilize quantized charges are unique for each individual qubit, resulting in a high-dimensional control parameter space that must be tuned automatically. Machine learning techniques are capable of processing high-dimensional data - provided th…
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A key challenge in scaling quantum computers is the calibration and control of multiple qubits. In solid-state quantum dots, the gate voltages required to stabilize quantized charges are unique for each individual qubit, resulting in a high-dimensional control parameter space that must be tuned automatically. Machine learning techniques are capable of processing high-dimensional data - provided that an appropriate training set is available - and have been successfully used for autotuning in the past. In this paper, we develop extremely small feed-forward neural networks that can be used to detect charge-state transitions in quantum dot stability diagrams. We demonstrate that these neural networks can be trained on synthetic data produced by computer simulations, and robustly transferred to the task of tuning an experimental device into a desired charge state. The neural networks required for this task are sufficiently small as to enable an implementation in existing memristor crossbar arrays in the near future. This opens up the possibility of miniaturizing powerful control elements on low-power hardware, a significant step towards on-chip autotuning in future quantum dot computers.
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Submitted 30 November, 2021; v1 submitted 8 January, 2021;
originally announced January 2021.
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Algorithm for automated tuning of a quantum dot into the single-electron regime
Authors:
Maxime Lapointe-Major,
Olivier Germain,
Julien Camirand Lemyre,
Dany Lachance-Quirion,
Sophie Rochette,
Félix Camirand Lemyre,
Michel Pioro-Ladrière
Abstract:
We report an algorithm designed to perform computer-automated tuning of a single quantum dot with a charge sensor. The algorithm performs an adaptive measurement sequence of sub-sized stability diagrams until the single-electron regime is identified and reached. For each measurement, the signal processing module removes the physical background of the charge sensor to generate a binary image of cha…
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We report an algorithm designed to perform computer-automated tuning of a single quantum dot with a charge sensor. The algorithm performs an adaptive measurement sequence of sub-sized stability diagrams until the single-electron regime is identified and reached. For each measurement, the signal processing module removes the physical background of the charge sensor to generate a binary image of charge transitions. Then, the image analysis module identifies the position and number of lines using two line detection schemes that are robust to noise and missing data.
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Submitted 26 November, 2019;
originally announced November 2019.
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Quantum dots with split enhancement gate tunnel barrier control
Authors:
S. Rochette,
M. Rudolph,
A. -M. Roy,
M. Curry,
G. Ten Eyck,
R. Manginell,
J. Wendt,
T. Pluym,
S. M. Carr,
D. Ward,
M. P. Lilly,
M. S. Carroll,
M. Pioro-Ladrière
Abstract:
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attai…
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We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures.
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Submitted 5 March, 2019; v1 submitted 12 July, 2017;
originally announced July 2017.
