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Enhanced Ferromagnetism in Monolayer Cr2Te3 via Topological Insulator Coupling
Authors:
Yunbo Ou,
Murod Mirzhalilov,
Norbert M. Nemes,
Jose L. Martinez,
Mirko Rocci,
Austin Akey,
Wenbo Ge,
Dhavala Suri,
Yi** Wang,
Haile Ambaye,
Jong Keum,
Mohit Randeria,
Nandini Trivedi,
Kenneth S. Burch,
David C. Bell,
Weida Wu,
Don Heiman,
Valeria Lauter,
Jagadeesh S. Moodera,
Hang Chi
Abstract:
Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) substrates…
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Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) substrates using molecular beam epitaxy. Robust ferromagnetism emerges in 2D Cr2Te3 ML with a Curie temperature TC = 17 K. Moreover, when Cr2Te3 is proximitized with topological insulator (TI) (Bi,Sb)2Te3, the magnetism becomes stronger -- for 1 ML, TC increases to 30 K, while for 2 ML it boosts from 65 K to 82 K. Our experiments and theory strongly indicate that the Bloembergen-Rowland interaction is likely a universal aspect of TC enhancement in TI-coupled magnetic heterostructures. The topological-surface-enhanced magnetism in 2D TMC enables further exchange coupling physics and quantum hybrid studies, including paving the way to realize interface-modulated topological electronics.
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Submitted 22 December, 2023;
originally announced December 2023.
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Gate-controlled Suspended Titanium Nanobridge Supercurrent Transistor
Authors:
M. Rocci,
G. De Simoni,
C. Puglia,
D. Degli Esposti,
E. Strambini,
V. Zannier,
L. Sorba,
F. Giazotto
Abstract:
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population, the manipulation of the superconducting phase, and the broadening of the switching current distributions. Aside from the high potential for future applications,…
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In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population, the manipulation of the superconducting phase, and the broadening of the switching current distributions. Aside from the high potential for future applications, these findings raised fundamental questions on the origin of these phenomena. To date, two complementary hypotheses are under debate: an electrostatically-triggered orbital polarization at the superconductor surface, or the injection of highly-energetic quasiparticles extracted from the gate. Here, we tackle this crucial issue via a fully suspended gate-controlled Ti nano-transistor. Our geometry allows to eliminate any direct injection of quasiparticles through the substrate thereby making cold electron field emission through the vacuum the only possible charge transport mechanism. With the aid of a fully numerical 3D model in combination with the observed phenomenology and thermal considerations we can rule out, with any realistic likelihood, the occurrence of cold electron field emission. Excluding these two trivial phenomena is pivotal in light of understanding the microscopic nature of gating effect in superconducting nanostructures, which represents an unsolved puzzle in contemporary superconductivity. Yet, from the technological point of view, our suspended fabrication technique provides the enabling technology to implement a variety of applications and fundamental studies combining, for instance, superconductivity with nano-mechanics.
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Submitted 23 January, 2021; v1 submitted 12 June, 2020;
originally announced June 2020.
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Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage
Authors:
Mirko Rocci,
Dhavala Suri,
Akashdeep Kamra,
Gilvania Vilela,
Norbert Nemes,
Jose Luis Martinez,
Mar Garcia Hernandez,
Jagadeesh S. Moodera
Abstract:
The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric field effect in these systems. Here, we demonstrate an enhancement of up to 30 % in critical current in the type II superconductor NbN, micro- and nano superconduc…
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The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric field effect in these systems. Here, we demonstrate an enhancement of up to 30 % in critical current in the type II superconductor NbN, micro- and nano superconducting bridges, tunable via a back-gate voltage. Our suggested plausible mechanism of this enhancement in critical current based on surface nucleation and pinning of Abrikosov vortices is consistent with expectations and observations for type-II superconductor films with thicknesses comparable to their coherence length. Furthermore we demonstrate infinite electroresistance and a hysteretic resistance dependence on the applied electric field which could lead to logic and memory applications in a superconductors-based low-dissipation digital computing paradigm. Our work thus provides the first demonstration of an electric field enhancement in the superconducting property in metallic superconductors, constituting a crucial step towards understanding of electric field-effects on the fundamental properties of a superconductor and its exploitation for future technologies.
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Submitted 28 January, 2021; v1 submitted 20 February, 2020;
originally announced February 2020.
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A Josephson phase battery
Authors:
E. Strambini,
A. Iorio,
O. Durante,
R. Citro,
C. Sanz-Fernández,
C. Guarcello,
I. V. Tokatly,
A. Braggio,
M. Rocci,
N. Ligato,
V. Zannier,
L. Sorba,
F. S. Bergeret,
F. Giazotto
Abstract:
A battery is a classical apparatus which converts a chemical reaction into a persistent voltage bias able to power electronic circuits. Similarly, a phase battery is a quantum equipment which provides a persistent phase bias to the wave function of a quantum circuit. It represents a key element for quantum technologies based on quantum coherence. Unlike the voltage batteries, a phase battery has n…
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A battery is a classical apparatus which converts a chemical reaction into a persistent voltage bias able to power electronic circuits. Similarly, a phase battery is a quantum equipment which provides a persistent phase bias to the wave function of a quantum circuit. It represents a key element for quantum technologies based on quantum coherence. Unlike the voltage batteries, a phase battery has not been implemented so far, mainly because of the natural rigidity of the quantum phase that, in typical quantum circuits, is imposed by the parity and time-reversal symmetry constrains. Here we report on the first experimental realization of a phase battery in a hybrid superconducting circuit. It consists of an n-doped InAs nanowire with unpaired-spin surface states and proximitized by Al superconducting leads. We find that the ferromagnetic polarization of the unpaired-spin states is efficiently converted into a persistent phase bias $\varphi_0$ across the wire, leading to the anomalous Josephson effect. By applying an external in-plane magnetic field a continuous tuning of $\varphi_0$ is achieved. This allows the charging and discharging of the quantum phase battery and reveals the symmetries of the anomalous Josephson effect predicted by our theoretical model. Our results demonstrate how the combined action of spin-orbit coupling and exchange interaction breaks the phase rigidity of the system inducing a strong coupling between charge, spin and superconducting phase. This interplay opens avenues for topological quantum technologies, superconducting circuitry and advanced schemes of circuit quantum electrodynamics.}
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Submitted 20 June, 2020; v1 submitted 10 January, 2020;
originally announced January 2020.
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Investigation of InAs based devices for topological applications
Authors:
Matteo Carrega,
Stefano Guiducci,
Andrea Iorio,
Lennart Bours,
Elia Strambini,
Giorgio Biasiol,
Mirko Rocci,
Valentina Zannier,
Lucia Sorba,
Fabio Beltram,
Stefano Roddaro,
Francesco Giazotto,
Stefan Heun
Abstract:
Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former,…
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Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin-orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to T_c~8K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin-orbit coherence length or supercurrent amplitude.
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Submitted 26 September, 2019;
originally announced September 2019.
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Strategy for accurate thermal biasing at the nanoscale
Authors:
Artem Denisov,
Evgeny Tikhonov,
Stanislau Piatrusha,
Ivan Khrapach,
Francesco Rossella,
Mirko Rocci,
Lucia Sorba,
Stefano Roddaro,
Vadim Khrapai
Abstract:
We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing techniqu…
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We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing technique in InAs nanowire based devices, that a nanoscale metallic constriction on a SiO2 substrate acts like a diffusive conductor with negligible electron-phonon relaxation and non-ideal leads. The non-universal impact of the leads on the achieved thermal bias -- which depends on their dimensions, shape and material composition -- is hard to minimize, but is possible to accurately calibrate in a properly designed nano-device. Our results allow to reduce the issue of the thermal bias calibration to the knowledge of the heater resistance and pave the way for accurate thermoelectric or similar measurements at the nanoscale.
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Submitted 20 March, 2020; v1 submitted 16 December, 2018;
originally announced December 2018.
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Vectorial control of the spin-orbit interaction in suspended InAs nanowires
Authors:
Andrea Iorio,
Mirko Rocci,
Lennart Bours,
Matteo Carrega,
Valentina Zannier,
Lucia Sorba,
Stefano Roddaro,
Francesco Giazotto,
Elia Strambini
Abstract:
Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires…
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Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires placed on top of a substrate which modifies the SOI vector and spoils the intrinsic symmetries of the system. In this work, we report experimental results on suspended InAs nanowires, in which the wire symmetries are fully preserved and clearly visible in transport measurements. Using a vectorial magnet, the non-trivial evolution of weak anti-localization (WAL) is tracked through all 3D space, and both the spin-orbit length $l_{SO}$ and coherence length $l_\varphi$ are determined as a function of the magnetic field magnitude and direction. Studying the angular maps of the WAL signal, we demonstrate that the average SOI within the nanowire is isotropic and that our findings are consistent with a semiclassical quasi-1D model of WAL adapted to include the geometrical constraints of the nanostructure. Moreover, by acting on properly designed side gates, we apply an external electric field introducing an additional vectorial Rashba spin-orbit component whose strength can be controlled by external means. These results give important hints on the intrinsic nature of suspended nanowire and can be interesting for in the field of spintronics as well as for the manipulation of Majorana bound states in devices based on hybrid semiconductors.
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Submitted 15 November, 2018; v1 submitted 11 July, 2018;
originally announced July 2018.
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InAs nanowire superconducting tunnel junctions: spectroscopy, thermometry and nanorefrigeration
Authors:
Jaakko Mastomäki,
Stefano Roddaro,
Mirko Rocci,
Valentina Zannier,
Daniele Ercolani,
Lucia Sorba,
Ilari J. Maasilta,
Nadia Ligato,
Antonio Fornieri,
Elia Strambini,
Francesco Giazotto
Abstract:
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with…
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We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with the BCS theoretical expectations of a superconducting tunnel junction. The studied devices combine small-scale tunnel contacts working as thermometers as well as larger electrodes that provide a proof-of-principle active {\em cooling} of the electron distribution in the nanowire. A peak refrigeration of about $δT = 10\,{\rm mK}$ is achieved at a bath temperature $T_{bath}\approx250-350\,{\rm mK}$ in our prototype devices. This method opens important perspectives for the investigation of thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration.
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Submitted 8 November, 2016;
originally announced November 2016.
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Local noise in a diffusive conductor
Authors:
E. S. Tikhonov,
D. V. Shovkun,
D. Ercolani,
F. Rossella,
M. Rocci,
L. Sorba,
S. Roddaro,
V. S. Khrapai
Abstract:
The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermogra…
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The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermography. Beyond time-averaged properties, valuable information can also be gained from spontaneous fluctuations of current (noise). From these perspective, however, a fundamental constraint is set by current conservation, which makes noise a characteristic of the whole conductor, rather than some part of it. Here we demonstrate how to remove this obstacle and pick up a local noise temperature of a current biased diffusive conductor with the help of a miniature noise probe. This approach is virtually noninvasive and extends primary local measurements towards strongly non-equilibrium regimes.
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Submitted 15 July, 2016; v1 submitted 25 April, 2016;
originally announced April 2016.
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Noise thermometry applied to thermoelectric measurements in InAs nanowires
Authors:
E. S. Tikhonov,
D. V. Shovkun,
V. S. Khrapai,
D. Ercolani,
F. Rossella,
M. Rocci,
L. Sorba,
S. Roddaro
Abstract:
We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike in previous approaches, we make use of a primary electronic nois…
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We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike in previous approaches, we make use of a primary electronic noise thermometry to calibrate a thermal bias across the NW. In particular, this enables us to apply a contact heating scheme, which is much more efficient in creating the thermal bias as compared to conventional substrate heating. The measured thermoelectric Seebeck coefficient exhibits strong mesoscopic fluctuations in dependence on the back-gate voltage that is used to tune the NW carrier density. We analyze the transport and thermoelectric data in terms of approximate Mott's thermopower relation and to evaluate a gate-voltage to Fermi energy conversion factor.
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Submitted 29 February, 2016;
originally announced February 2016.
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Proximity driven commensurate pinning in YBa2Cu3O7 through all-oxide magnetic nanostructures
Authors:
M. Rocci,
J. Azpeitia,
J. Trastoy A. Perez-Muñoz,
M. Cabero,
R. F. Luccas,
C. Munuera,
F. J. Mompean,
M. Garcia-Hernandez,
K. Bouzehouane,
Z. Sefrioui,
C. Leon,
A. Rivera-Calzada,
J. E. Villegas,
J. Santamaria
Abstract:
The design of artificial vortex pinning landscapes is a major goal towards large scale applications of cuprate superconductors. While disordered nanometric inclusions have shown to modify their vortex phase diagram and to produce enhancements of the critical current1,2, the effect of ordered oxide nanostructures remains essentially unexplored. This is due to the very small nanostructure size impos…
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The design of artificial vortex pinning landscapes is a major goal towards large scale applications of cuprate superconductors. While disordered nanometric inclusions have shown to modify their vortex phase diagram and to produce enhancements of the critical current1,2, the effect of ordered oxide nanostructures remains essentially unexplored. This is due to the very small nanostructure size imposed by the short coherence length, and to the technological difficulties in the nanofabrication process. Yet, the novel phenomena occurring at oxide interfaces open a wide spectrum of technological opportunities to interplay with the superconductivity in cuprates. Here we show that the unusual long range suppression of the superconductivity occurring at the interface between manganites and cuprates affects vortex nucleation and provides a novel vortex pinning mechanism. In particular, we show evidence of commensurate pinning in YBCO films with ordered arrays of LCMO ferromagnetic nanodots. Vortex pinning results from the proximity induced reduction of the condensation energy at the vicinity of the magnetic nanodots, and yields an enhanced friction between the nanodot array and the moving vortex lattice in the liquid phase. This result shows that all-oxide ordered nanostructures constitute a powerful, new route for the artificial manipulation of vortex matter in cuprates.
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Submitted 9 November, 2015;
originally announced November 2015.