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Assembly and disorder dissipation in superparamagnetic nanoparticle chains in a rotating magnetic field
Authors:
Zhixing He,
Hans D. Robinson
Abstract:
We investigate the formation of chains of superparamagnetic iron oxide nanoparticles (SPIONs) in a rotating magnetic field, combining two well-explored chain-forming systems: larger micron-scale beads in a rotating magnetic field, and SPIONs in a static field. This simple combination is interesting because it features self-assembly that occurs both far from equilibrium and at a finite temperature,…
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We investigate the formation of chains of superparamagnetic iron oxide nanoparticles (SPIONs) in a rotating magnetic field, combining two well-explored chain-forming systems: larger micron-scale beads in a rotating magnetic field, and SPIONs in a static field. This simple combination is interesting because it features self-assembly that occurs both far from equilibrium and at a finite temperature, with the better-explored systems constituting respectively its zero temperature and near-equilibrium limits. Theories applicable to either of the two limits qualitatively predict the chain length distributions, except that chains in our experiments are shorter, which we attribute to the simultaneous presence of thermal fluctuations and fluid shear forces that work in concert to break chains apart. Our most striking result is that the disorder in the SPION chains gradually dissipates over a timescale of tens of minutes, about two orders of magnitude slower than the characteristic chain assembly time. The disorder dissipation can be sped up by increasing particle concentration and solution ionic strength, both of which increase the speed of chain assembly. This strongly suggests that the improvement in chain order with time is not due to thermal fluctuations but rather to energy imparted by the self-assembly process, which continually causes chains to grow and break apart, even when a steady state distribution has obtained. More generally, our results indicate that self-assembly away from equilibrium may sometimes lead to better ordered assemblies than under near-equilibrium conditions.
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Submitted 22 November, 2020; v1 submitted 5 March, 2020;
originally announced March 2020.
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Single photo-electron trap**, storage, and detection in a one-electron quantum dot
Authors:
Deepak Sethu Rao,
Thomas Szkopek,
Hans Daniel Robinson,
Eli Yablonovitch,
Hong-Wen Jiang
Abstract:
There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a…
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There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photo-electron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photo-electron detector could allow for information transfer between flying photon qubits and stored electron qubits.
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Submitted 15 December, 2004; v1 submitted 13 October, 2004;
originally announced October 2004.
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A single photoelectron transistor for quantum optical communications
Authors:
Hideo Kosaka,
Deepak S. Rao,
Hans D. Robinson,
Prabhakar Bandaru,
Kikuo Makita,
Eli Yablonovitch
Abstract:
A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be photo-ionized and repeatedly reset for the arrival of successive individual photons. This single photoelectron transistor (SPT) operating at th…
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A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be photo-ionized and repeatedly reset for the arrival of successive individual photons. This single photoelectron transistor (SPT) operating at the lambda = 1.3 mu m tele-communication band, was demonstrated by using a windowed-gate double-quantum-well InGaAs/InAlAs/InP heterostructure that was designed to provide near-zero electron g-factor. The g-factor engineering allows selection rules that would convert a photon's polarization to an electron spin polarization. The safe arrival of the photo-electric charge would trigger the commencement of the teleportation algorithm.
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Submitted 2 September, 2002; v1 submitted 30 August, 2002;
originally announced August 2002.
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Photoconductance Quantization in a Single-Photon Detector
Authors:
Hideo Kosaka,
Deepak S. Rao,
Hans D. Robinson,
Prabhakar Bandaru,
Toshitsugu Sakamoto,
Eli Yablonovitch
Abstract:
We have made a single-photon detector that relies on photoconductive gain in a narrow electron channel in an AlGaAs/GaAs 2-dimensional electron gas. Given that the electron channel is 1-dimensional, the photo-induced conductance has plateaus at multiples of the quantum conductance 2e$^{2}$/h. Super-imposed on these broad conductance plateaus are many sharp, small, conductance steps associated wi…
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We have made a single-photon detector that relies on photoconductive gain in a narrow electron channel in an AlGaAs/GaAs 2-dimensional electron gas. Given that the electron channel is 1-dimensional, the photo-induced conductance has plateaus at multiples of the quantum conductance 2e$^{2}$/h. Super-imposed on these broad conductance plateaus are many sharp, small, conductance steps associated with single-photon absorption events that produce individual photo-carriers. This type of photoconductive detector could measure a single photon, while safely storing and protecting the spin degree of freedom of its photo-carrier. This function is valuable for a quantum repeater that would allow very long distance teleportation of quantum information.
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Submitted 20 December, 2001;
originally announced December 2001.
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Direct Observation of Lateral Coupling Between Self-Assembled Qauntum Dots
Authors:
H. D. Robinson,
B. B. Goldberg,
J. L. Merz
Abstract:
Scattering of carriers between spatially separated zero dimensional states has been observed in a system of self-assembled In_{0.55}Al_{0.45}As quantum dots. We believe the interdot tunneling is mediated by localized states below the barrier band edge. The experiment was performed by taking photoluminescence excitation spectra at 4.2K using a near-field scanning optical microscope. Surprisingly,…
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Scattering of carriers between spatially separated zero dimensional states has been observed in a system of self-assembled In_{0.55}Al_{0.45}As quantum dots. We believe the interdot tunneling is mediated by localized states below the barrier band edge. The experiment was performed by taking photoluminescence excitation spectra at 4.2K using a near-field scanning optical microscope. Surprisingly, the excitation spectrum from individual dots does not quench to zero at any energy, even when the energy of the exciting light is tuned below the barrier band edge. On top of this continuum, narrow resonances are observed in the emission lines of individual dots. These resonances tend to occur simultaneously in several emission lines, originating from different quantum dots, evincing interdot scattering.
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Submitted 9 October, 1998;
originally announced October 1998.
