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Enhanced Electron Spin Coherence in a GaAs Quantum Emitter
Authors:
Giang N. Nguyen,
Clemens Spinnler,
Mark R. Hogg,
Liang Zhai,
Alisa Javadi,
Carolin A. Schrader,
Marcel Erbe,
Marcus Wyss,
Julian Ritzmann,
Hans-Georg Babin,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of on-demand coherent photons. However, the spin rapidly decoheres via the magnetic noise arising from the host nuclei. Here, we address this drawback by implementi…
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A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of on-demand coherent photons. However, the spin rapidly decoheres via the magnetic noise arising from the host nuclei. Here, we address this drawback by implementing an all-optical nuclear-spin cooling scheme on a GaAs quantum dot. The electron-spin coherence time increases 156-fold from $T_2^*$ = 3.9 ns to 0.608 $μ$s. The cooling scheme depends on a non-collinear term in the hyperfine interaction. The results show that such a term is present even though the strain is low and no external stress is applied. Our work highlights the potential of optically-active GaAs quantum dots as fast, highly coherent spin-photon interfaces.
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Submitted 5 July, 2023;
originally announced July 2023.
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Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
Authors:
Inga Seidler,
Malte Neul,
Eugen Kammerloher,
Matthias Künne,
Andreas Schmidbauer,
Laura Diebel,
Arne Ludwig,
Julian Ritzmann,
Andreas D. Wieck,
Dominique Bougeard,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for elect…
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Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for electrostatically modelling new spin qubit device layouts, considering gate voltages, heterostructures, reservoirs and an applied source-drain bias. Exemplified by a specific potential, we study the influence of each parameter. We verify our model by indirectly probing the potential landscape of two design implementations through transport measurements. We use the simulations to identify critical design areas and optimize for robustness with regard to influence and resolution limits of the fabrication process.
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Submitted 23 March, 2023;
originally announced March 2023.
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Semiconductor membranes for electrostatic exciton trap** in optically addressable quantum transport devices
Authors:
Thomas Descamps,
Feng Liu,
Sebastian Kindel,
René Otten,
Tobias Hangleiter,
Chao Zhao,
Mihail Ion Lepsa,
Julian Ritzmann,
Arne Ludwig,
Andreas D. Wieck,
Beata E. Kardynał,
Hendrik Bluhm
Abstract:
Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example, interfacing stationary solid-state qubits with photonic quantum states would open a new pathway towards the realization of a quantum network with extended quantum pr…
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Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example, interfacing stationary solid-state qubits with photonic quantum states would open a new pathway towards the realization of a quantum network with extended quantum processing capacity in each node. While gated devices allow very flexible confinement of electrons or holes, the confinement of excitons without some element of self-assembly is much harder. To address this limitation, we introduce a technique to realize exciton traps in quantum wells via local electric fields by thinning a heterostructure down to a 220 nm thick membrane. We show that mobilities over $1 \times 10^{6}$ cm$^{2}$V$^{-1}$s$^{-1}$ can be retained and that quantum point contacts and Coulomb oscillations can be observed on this structure, which implies that the thinning does not compromise the heterostructure quality. Furthermore, the local lowering of the exciton energy via the quantum-confined Stark effect is confirmed, thus forming exciton traps. These results lay the technological foundations for devices like single photon sources, spin photon interfaces and eventually quantum network nodes in GaAs quantum wells, realized entirely with a top-down fabrication process.
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Submitted 9 November, 2022; v1 submitted 15 July, 2022;
originally announced July 2022.
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Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well
Authors:
T. Nakagawa,
S. Lamoureux,
T. Fujita,
J. Ritzmann,
A. Ludwig,
A. D. Wieck,
A. Oiwa,
M. Korkusinski,
A. Sachrajda,
D. G. Austing,
L. Gaudreau
Abstract:
The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inte…
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The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near zero magnetic field. Spin-blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ~0.1 found for a magnetic field parallel to the direction [11(bar)0], is approximately a factor of four lower than that for comparable circuits fabricated from material grown on widely-employed standard (001) GaAs substrates, and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates.
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Submitted 14 November, 2021;
originally announced November 2021.
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Sensing dot with high output swing for scalable baseband readout of spin qubits
Authors:
Eugen Kammerloher,
Andreas Schmidbauer,
Laura Diebel,
Inga Seidler,
Malte Neul,
Matthias Künne,
Arne Ludwig,
Julian Ritzmann,
Andreas Wieck,
Dominique Bougeard,
Lars R. Schreiber,
Hendrik Bluhm
Abstract:
A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically designed to provide a significant…
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A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically designed to provide a significantly improved response compared to conventional charge sensing dots. Our ASD design features a strongly decoupled drain reservoir from the sensor dot, which mitigates negative feedback effects found in conventional sensors. This results in a boosted output swing of $3\,\text{mV}$, which exceeds the response in the conventional regime of our device by more than ten times. The enhanced output signal paves the way for employing very low-power readout amplifiers in close proximity to the qubit.
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Submitted 4 May, 2023; v1 submitted 28 July, 2021;
originally announced July 2021.
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Quantum Interference of Identical Photons from Remote GaAs Quantum Dots
Authors:
Liang Zhai,
Giang N. Nguyen,
Clemens Spinnler,
Julian Ritzmann,
Matthias C. Löbl,
Andreas D. Wieck,
Arne Ludwig,
Alisa Javadi,
Richard J. Warburton
Abstract:
Photonic quantum technology provides a viable route to quantum communication, quantum simulation, and quantum information processing. Recent progress has seen the realisation of boson sampling using 20 single-photons and quantum key distribution over hundreds of kilometres. Scaling the complexity requires architectures containing multiple photon-sources, photon-counters, and a large number of indi…
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Photonic quantum technology provides a viable route to quantum communication, quantum simulation, and quantum information processing. Recent progress has seen the realisation of boson sampling using 20 single-photons and quantum key distribution over hundreds of kilometres. Scaling the complexity requires architectures containing multiple photon-sources, photon-counters, and a large number of indistinguishable single photons. Semiconductor quantum dots are bright and fast sources of coherent single-photons. For applications, a significant roadblock is the poor quantum coherence upon interfering single photons created by independent quantum dots. Here, we demonstrate two-photon interference with near-unity visibility ($93.0\pm0.8$)\% using photons from two completely separate GaAs quantum dots. The experiment retains all the emission into the zero-phonon-line -- only the weak phonon-sideband is rejected -- and temporal post-selection is not employed. Exploiting the quantum interference, we demonstrate a photonic controlled-not circuit and an entanglement with fidelity ($85.0\pm 1.0$)\% between photons of different origins. The two-photon interference visibility is high enough that the entanglement fidelity is well above the classical threshold. The high mutual-coherence of the photons stems from high-quality materials, a diode-structure, and the relatively large quantum dot size. Our results establish a platform, GaAs QDs, for creating coherent single photons in a scalable way.
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Submitted 14 February, 2023; v1 submitted 7 June, 2021;
originally announced June 2021.
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Optically driving the radiative Auger transition
Authors:
Clemens Spinnler,
Liang Zhai,
Giang N. Nguyen,
Julian Ritzmann,
Andreas D. Wieck,
Arne Ludwig,
Alisa Javadi,
Doris E. Reiter,
Paweł Machnikowski,
Richard J. Warburton,
Matthias C. Löbl
Abstract:
In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have been observed over a large spectral range: in the X-ray emission of atoms; close to visible frequencies on donors in semiconductors and quantum emitters; and a…
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In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have been observed over a large spectral range: in the X-ray emission of atoms; close to visible frequencies on donors in semiconductors and quantum emitters; and at infrared frequencies as shake-up lines in two-dimensional systems. So far, all the work on the radiative Auger process has focussed on detecting the spontaneous emission. However, the fact that the radiative Auger process leads to photon emission suggests that the transition can also be optically excited. In such an inverted radiative Auger process, excitation would correspond to simultaneous photon absorption and electronic de-excitation. Here, we demonstrate optical driving of the radiative Auger transition on a trion in a semiconductor quantum dot. The radiative Auger and the fundamental transition together form a $Λ$-system. On driving both transitions of this $Λ$-system simultaneously, we observe a reduction of the fluorescence signal by up to $70\%$. Our results demonstrate a type of optically addressable transition connecting few-body Coulomb interactions to quantum optics. The results open up the possibility of carrying out THz spectroscopy on single quantum emitters with all the benefits of optics: coherent laser sources, efficient and fast single-photon detectors. In analogy to optical control of an electron spin, the $Λ$-system between the radiative Auger and the fundamental transitions allows optical control of the emitters' orbital degree of freedom.
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Submitted 7 May, 2021;
originally announced May 2021.
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Wafer-Scale Epitaxial Modulation of Quantum Dot Density
Authors:
N. Bart,
C. Dangel,
P. Zajac,
N. Spitzer,
J. Ritzmann,
M. Schmidt,
H. G. Babin,
R. Schott,
S. R. Valentin,
S. Scholz,
Y. Wang,
R. Uppu,
D. Najer,
M. C. Löbl,
N. Tomm,
A. Javadi,
N. O. Antoniadis,
L. Midolo,
K. Müller,
R. J. Warburton,
P. Lodahl,
A. D. Wieck,
J. J. Finley,
A. Ludwig
Abstract:
Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be u…
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Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/$μm^{2}$ and periods ranging from several millimeters down to at least a few hundred microns. This novel method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.
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Submitted 9 December, 2021; v1 submitted 20 November, 2020;
originally announced November 2020.
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Low-Noise GaAs Quantum Dots for Quantum Photonics
Authors:
Liang Zhai,
Matthias C. Löbl,
Giang N. Nguyen,
Julian Ritzmann,
Alisa Javadi,
Clemens Spinnler,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-bas…
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Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an $n$-$i$-$p$-diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum.
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Submitted 24 September, 2020; v1 submitted 28 February, 2020;
originally announced March 2020.
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Radiative Auger Process in the Single-Photon Limit
Authors:
Matthias C. Löbl,
Clemens Spinnler,
Alisa Javadi,
Liang Zhai,
Giang N. Nguyen,
Julian Ritzmann,
Leonardo Midolo,
Peter Lodahl,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
In a multi-electron atom, an excited electron can decay by emitting a photon. Typically, the leftover electrons are in their ground state. In a radiative Auger process, the leftover electrons are in an excited state and a redshifted photon is created. In a semiconductor quantum dot, radiative Auger is predicted for charged excitons. Here we report the observation of radiative Auger on trions in si…
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In a multi-electron atom, an excited electron can decay by emitting a photon. Typically, the leftover electrons are in their ground state. In a radiative Auger process, the leftover electrons are in an excited state and a redshifted photon is created. In a semiconductor quantum dot, radiative Auger is predicted for charged excitons. Here we report the observation of radiative Auger on trions in single quantum dots. For a trion, a photon is created on electron-hole recombination, leaving behind a single electron. The radiative Auger process promotes this additional (Auger) electron to a higher shell of the quantum dot. We show that the radiative Auger effect is a powerful probe of this single electron: the energy separations between the resonance fluorescence and the radiative Auger emission directly measure the single-particle splittings of the electronic states in the quantum dot with high precision. In semiconductors, these single-particle splittings are otherwise hard to access by optical means as particles are excited typically in pairs, as excitons. After the radiative Auger emission, the Auger carrier relaxes back to the lowest shell. Going beyond the original theoretical proposals, we show how applying quantum optics techniques to the radiative Auger photons gives access to the single-electron dynamics, notably relaxation and tunneling. This is also hard to access by optical means: even for quasi-resonant $p$-shell excitation, electron relaxation takes place in the presence of a hole, complicating the relaxation dynamics. The radiative Auger effect can be exploited in other semiconductor nanostructures and quantum emitters in the solid state to determine the energy levels and the dynamics of a single carrier.
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Submitted 16 January, 2021; v1 submitted 26 November, 2019;
originally announced November 2019.
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Measurement of back-action from electron spins in a gate defined GaAs double quantum dot coupled to a mesoscopic nuclear spin bath
Authors:
Patrick Bethke,
Robert P. G. McNeil,
Julian Ritzmann,
Tim Botzem,
Arne Ludwig,
Andreas D. Wieck,
Hendrik Bluhm
Abstract:
Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology applications. The effects of large, weakly coupled environments are often described as a classical, fluctuating field whose dynamics is unaffected by the qubit, whereas a f…
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Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology applications. The effects of large, weakly coupled environments are often described as a classical, fluctuating field whose dynamics is unaffected by the qubit, whereas a fully quantum description still implies some back-action from the qubit on the environment. Here we show direct experimental evidence for such a back-action for an electron-spin-qubit in a GaAs quantum dot coupled to a mesoscopic environment of order $10^6$ nuclear spins. By means of a correlation measurement technique, we detect the back-action of a single qubit-environment interaction whose duration is comparable to the qubit's coherence time, even in such a large system. We repeatedly let the qubit interact with the spin bath and measure its state. Between such cycles, the qubit is reinitialized to different states. The correlations of the measurement outcomes are strongly affected by the intermediate qubit state, which reveals the action of a single electron spin on the nuclear spins.
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Submitted 26 July, 2020; v1 submitted 26 June, 2019;
originally announced June 2019.
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Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage
Authors:
Pascal Cerfontaine,
Tim Botzem,
Julian Ritzmann,
Simon Sebastian Humpohl,
Arne Ludwig,
Dieter Schuh,
Dominique Bougeard,
Andreas D. Wieck,
Hendrik Bluhm
Abstract:
Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses…
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Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses new challenges for high-fidelity control. Here, we demonstrate exchange-based single-qubit gates of two-electron spin qubits in GaAs double quantum dots. Using careful pulse optimization and closed-loop tuning, we achieve a randomized benchmarking fidelity of $(99.50 \pm 0.04)\%$ and a leakage rate of $0.13\%$ out of the computational subspace. These results open new perspectives for microwave-free control of singlet-triplet qubits in GaAs and other materials.
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Submitted 22 January, 2021; v1 submitted 12 June, 2019;
originally announced June 2019.
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Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots
Authors:
Matthias C. Löbl,
Liang Zhai,
Jan-Philipp Jahn,
Julian Ritzmann,
Yongheng Huo,
Andreas D. Wieck,
Oliver G. Schmidt,
Arne Ludwig,
Armando Rastelli,
Richard J. Warburton
Abstract:
A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-e…
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A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over $μ$m-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved.
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Submitted 3 October, 2019; v1 submitted 26 February, 2019;
originally announced February 2019.
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Excitons in InGaAs Quantum Dots without Electron Wetting Layer States
Authors:
Matthias C. Löbl,
Sven Scholz,
Immo Söllner,
Julian Ritzmann,
Thibaud Denneulin,
Andras Kovacs,
Beata E. Kardynał,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and nano-engineered devices. InAs QDs are excellent photon emitters: QD-excitons, electron-hole bound pairs, are exploited as emitters of high quality single photons for quantu…
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The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and nano-engineered devices. InAs QDs are excellent photon emitters: QD-excitons, electron-hole bound pairs, are exploited as emitters of high quality single photons for quantum communication. One significant drawback of the SK-mode is the wetting layer (WL). The WL results in a continuum rather close in energy to the QD-confined-states. The WL-states lead to unwanted scattering and dephasing processes of QD-excitons. Here, we report that a slight modification to the SK-growth-protocol of InAs on GaAs -- we add a monolayer of AlAs following InAs QD formation -- results in a radical change to the QD-excitons. Extensive characterisation demonstrates that this additional layer eliminates the WL-continuum for electrons enabling the creation of highly charged excitons where up to six electrons occupy the same QD. Single QDs grown with this protocol exhibit optical linewidths matching those of the very best SK QDs making them an attractive alternative to standard InGaAs QDs.
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Submitted 1 October, 2018;
originally announced October 2018.
