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Ubiquitous Superconducting Diode Effect in Superconductor Thin Films
Authors:
Yasen Hou,
Fabrizio Nichele,
Hang Chi,
Alessandro Lodesani,
Yingying Wu,
Markus F. Ritter,
Daniel Z. Haxell,
Margarita Davydova,
Stefan Ilić,
Ourania Glezakou-Elbert,
Amith Varambally,
F. Sebastian Bergeret,
Akashdeep Kamra,
Liang Fu,
Patrick A. Lee,
Jagadeesh S. Moodera
Abstract:
The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in…
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The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish non-volatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge/surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens door for novel technologies. Meanwhile, we reveal the ubiquity of Meissner screening effect induced SC diode effect in superconducting films, which should be eliminated with great care in the search of exotic superconducting states harboring finite-momentum Cooper pairing.
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Submitted 3 February, 2023; v1 submitted 18 May, 2022;
originally announced May 2022.
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Large even-odd spacing and $g$-factor anisotropy in PbTe quantum dots
Authors:
S. C. ten Kate,
M. F. Ritter,
A. Fuhrer,
J. Jung,
S. G. Schellingerhout,
E. P. A. M. Bakkers,
H. Riel,
F. Nichele
Abstract:
PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-o…
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PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron $g$-factor as a function of magnetic field direction. We find the $g$-factor tensor to be highly anisotropic, with principal $g$-factors ranging from 0.9 to 22.4, and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots.
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Submitted 13 May, 2022;
originally announced May 2022.
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Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs
Authors:
D. Z. Haxell,
E. Cheah,
F. Křížek,
R. Schott,
M. F. Ritter,
M. Hinderling,
W. Belzig,
C. Bruder,
W. Wegscheider,
H. Riel,
F. Nichele
Abstract:
We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature…
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We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature, where the transition temperature $T^{*}$ is gate-tunable. The switching probability distributions are shown to be consistent with a small shunt capacitance and moderate dam**, resulting in a switching current which is a small fraction of the critical current. Phase locking between two JJs leads to a difference in switching current between that of a JJ measured in isolation and that of the same JJ measured in an asymmetric SQUID loop. In the case of the loop, $T^*$ is also tuned by a magnetic flux.
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Submitted 21 November, 2022; v1 submitted 12 April, 2022;
originally announced April 2022.
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Semiconductor Epitaxy in Superconducting Templates
Authors:
M. F. Ritter,
H. Schmid,
M. Sousa,
P. Staudinger,
D. Z. Haxell,
M. A. Mueed,
B. Madon,
A. Pushp,
H. Riel,
F. Nichele
Abstract:
Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characteriz…
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Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
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Submitted 12 August, 2021;
originally announced August 2021.
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On the Role of Out-of-Equilibrium Phonons in Gated Superconducting Switches
Authors:
M. F. Ritter,
N. Crescini,
D. Z. Haxell,
M. Hinderling,
H. Riel,
C. Bruder,
A. Fuhrer,
F. Nichele
Abstract:
Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small currents of high-energy electrons. We shed light on this matter by studying the suppression of superconductivity in sample geometries where the roles of electric…
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Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small currents of high-energy electrons. We shed light on this matter by studying the suppression of superconductivity in sample geometries where the roles of electric field and electron-current flow can be clearly separated. Our results show that suppression of superconductivity does not depend on the presence or absence of an electric field at the surface of the nanowire, but requires a current of high-energy electrons. The suppression is most efficient when electrons are injected into the nanowire, but similar results are obtained also when electrons are passed between two remote electrodes at a distance $d$ to the nanowire (with $d$ in excess of $1~\mathrm{μm}$). In the latter case, high-energy electrons decay into phonons which propagate through the substrate and affect superconductivity in the nanowire by generating quasiparticles. We show that this process involves a non-thermal phonon distribution, with marked differences from the loss of superconductivity due to Joule heating near the nanowire or an increase in the bath temperature.
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Submitted 3 June, 2021;
originally announced June 2021.
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A superconducting switch actuated by injection of high energy electrons
Authors:
M. F. Ritter,
A. Fuhrer,
D. Z. Haxell,
S. Hart,
P. Gumann,
H. Riel,
F. Nichele
Abstract:
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting…
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Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting devices. Here we present an electrically controlled superconducting switch based on a metallic nanowire. Transition from superconducting to resistive state is realized by tunneling of high-energy electrons from a gate contact through an insulating barrier. Operating gate currents are several orders of magnitude smaller than the nanowire critical source-drain current, effectively resulting in a voltage-controlled device. This superconducting switch is fast, self-resets from normal to superconducting state, and can operate in large magnetic fields, making it an ideal component for low-power cryogenic applications and quantum computing architectures.
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Submitted 1 May, 2020;
originally announced May 2020.
