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Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
Authors:
Nidhin Kurian Kalarickal,
Zixuan Feng,
A F M Anhar Uddin Bhuiyan,
Zhanbo Xia,
Joe F. McGlone,
Wyatt Moore,
Aaron R. Arehart,
Steven A. Ringel,
Hong** Zhao,
Siddharth Rajan
Abstract:
The performance of ultra-wide band gap materials like $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO$_\mathrm{3}$ can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region…
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The performance of ultra-wide band gap materials like $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO$_\mathrm{3}$ can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region of lateral field effect transistors. Using this strategy, we were able to achieve high average breakdown fields of 1.5 MV/cm and 4 MV/cm at gate-drain spacing (L$_\mathrm{gd}$) of 6 um and 0.6 um respectively in $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$, at a high channel sheet charge density of 1.8x10$^\mathrm{13}$cm$^\mathrm{-2}$. The high sheet charge density together with high breakdown field enabled a record power figure of merit (V$^\mathrm{2}$$_\mathrm{br}$/R$_\mathrm{on}$) of 376 MW/cm$^\mathrm{2}$ at a gate-drain spacing of 3 um.
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Submitted 3 June, 2020;
originally announced June 2020.
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Probing charge transport and background do** in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$
Authors:
Zixuan Feng,
A F M Anhar Uddin Bhuiyan,
Zhanbo Xia,
Wyatt Moore,
Zhaoying Chen,
Joe F. McGlone,
David R. Daughton,
Aaron R. Arehart,
Steven A. Ringel,
Siddharth Rajan,
Hong** Zhao
Abstract:
A new record-high room temperature electron Hall mobility ($μ_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for $β$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of $\sim 9500\space cm^{2}/V\space s$ is achieved at 45 K. Further investi…
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A new record-high room temperature electron Hall mobility ($μ_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for $β$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of $\sim 9500\space cm^{2}/V\space s$ is achieved at 45 K. Further investigation on the transport properties indicate the existence of sheet charges near the epi-layer/substrate interface. Si is identified as the primary contributor to the background carrier in both the epi-layer and the interface, originated from both surface contamination as well as growth environment. Pre-growth hydrofluoric acid cleaning of the substrate lead to an obvious decrease of Si impurity both at interface and in epi-layer. In addition, the effect of MOCVD growth condition, particularly the chamber pressure, on the Si impurity incorporation is studied. A positive correlation between the background charge concentration and the MOCVD growth pressure is confirmed. It is noteworthy that in a $β$-Ga2O3 film with very low bulk charge concentration, even a reduced sheet charge density can play an important role in the charge transport properties.
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Submitted 27 April, 2020;
originally announced April 2020.
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Mechanism of Si do** in Plasma Assisted MBE Growth of \b{eta}-Ga2O3
Authors:
Nidhin Kurian Kalarickal,
Zhanbo Xia,
Joe McGlone,
Sriram Krishnamoorthy,
Wyatt Moore,
Mark Brenner,
Aaron R. Arehart,
Steven A. Ringel,
Siddharth Rajan
Abstract:
We report on the origin of high Si flux observed during the use of Si as a do** source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by the vapor pressure of Si but by the formation of volatile SiO. The low sublimation energy of SiO leads to weak dependence of the SiO flux of Si cell temperature…
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We report on the origin of high Si flux observed during the use of Si as a do** source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by the vapor pressure of Si but by the formation of volatile SiO. The low sublimation energy of SiO leads to weak dependence of the SiO flux of Si cell temperature and a strong dependence on the background oxygen pressure. Extended exposure to activated oxygen results in reduction of SiO flux due to the formation of SiO2 on the Si surface. The work reported provides key understanding for incorporating Si into future oxide-based semiconductor heterostructure and device MBE growth.
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Submitted 2 August, 2019;
originally announced August 2019.
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Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3
Authors:
Jared M. Johnson,
Zhen Chen,
Joel B. Varley,
Christine M. Jackson,
Esmat Farzana,
Zeng Zhang,
Aaron R. Arehart,
Hsien-Lien Huang,
Arda Genc,
Steven A. Ringel,
Chris G. Van de Walle,
David A. Muller,
**woo Hwang
Abstract:
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic scale structure of beta-Ga2O3 using high resolution scanning transmission electron mi…
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Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic scale structure of beta-Ga2O3 using high resolution scanning transmission electron microscopy (STEM). Each complex involves one cation interstitial atom paired with two cation vacancies. These divacancy - interstitial complexes correlate directly with structures obtained by density functional theory, which predicts them to be compensating acceptors in beta-Ga2O3. This prediction is confirmed by a comparison between STEM data and deep level optical spectroscopy results, which reveals that these complexes correspond to a deep trap within the band gap, and that the development of the complexes is facilitated by Sn do** through the increase in vacancy concentration. These findings provide new insight on this emerging material's unique response to the incorporation of impurities that can critically influence their properties.
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Submitted 1 July, 2019;
originally announced July 2019.
