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Machine Learning Peeling and Loss Modelling of Time-Domain Reflectometry
Authors:
J. R. Rinehart,
J. H. Béjanin,
T. C. Fraser,
M. Mariantoni
Abstract:
A fundamental pursuit of microwave metrology is the determination of the characteristic impedance profile of microwave systems. Among other methods, this can be practically achieved by means of time-domain reflectometry (TDR) that measures the reflections from a device due to an applied stimulus. Conventional TDR allows for the measurement of systems comprising a single impedance. However, real sy…
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A fundamental pursuit of microwave metrology is the determination of the characteristic impedance profile of microwave systems. Among other methods, this can be practically achieved by means of time-domain reflectometry (TDR) that measures the reflections from a device due to an applied stimulus. Conventional TDR allows for the measurement of systems comprising a single impedance. However, real systems typically feature impedance variations that obscure the determination of all impedances subsequent to the first one. This problem has been studied previously and is generally known as scattering inversion or, in the context of microwave metrology, time-domain "peeling". In this article, we demonstrate the implementation of a space-time efficient peeling algorithm that corrects for the effect of prior impedance mismatch in a nonuniform lossless transmission line, regardless of the nature of the stimulus. We generalize TDR measurement analysis by introducing two tools: A stochastic machine learning clustering tool and an arbitrary lossy transmission line modeling tool. The former mitigates many of the imperfections typically plaguing TDR measurements (except for dispersion) and allows for an efficient processing of large datasets; the latter allows for a complete transmission line characterization including both conductor and dielectric loss.
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Submitted 12 April, 2018;
originally announced April 2018.
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Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators
Authors:
C. R. H. McRae,
J. H. Béjanin,
C. T. Earnest,
T. G. McConkey,
J. R. Rinehart,
C. Deimert,
J. P. Thomas,
Z. R. Wasilewski,
M. Mariantoni
Abstract:
Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing materials losses is crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature supe…
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Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing materials losses is crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level states (TLSs) are the dominating loss mechanism at low photon number and temperature. Thermally evaporated indium is determined to have a TLS loss tangent due to indium oxide of ~5x1e-05. The molecular beam epitaxial films show evidence of formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.
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Submitted 22 December, 2017;
originally announced December 2017.
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Mitigating coherent leakage of superconducting qubits in a large-scale quantum socket
Authors:
T. G. McConkey,
J. H. Béjanin,
C. T. Earnest,
C. R. H. McRae,
Z. Pagel,
J. R. Rinehart,
M. Mariantoni
Abstract:
A practical quantum computer requires quantum bit (qubit) operations with low error rates in extensible architectures. We study a packaging method that makes it possible to address hundreds of superconducting qubits by means of three-dimensional wires: The large-scale quantum socket. A qubit chip is housed in a superconducting box, where both box and chip dimensions lead to unwanted modes that can…
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A practical quantum computer requires quantum bit (qubit) operations with low error rates in extensible architectures. We study a packaging method that makes it possible to address hundreds of superconducting qubits by means of three-dimensional wires: The large-scale quantum socket. A qubit chip is housed in a superconducting box, where both box and chip dimensions lead to unwanted modes that can interfere with qubit operations. We theoretically analyze these interference effects in the context of qubit coherent leakage. We propose two methods to mitigate the resulting errors by detuning the resonance frequency of the modes from the qubit frequency. We perform detailed electromagnetic field simulations indicating that the resonance frequency of the modes increases with the number of installed three-dimensional wires and can be engineered to be significantly higher than the highest qubit frequency. Finally, we show preliminary experimental results towards the implementation of a large-scale quantum socket.
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Submitted 12 October, 2017;
originally announced October 2017.
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Thermocompression Bonding Technology for Multilayer Superconducting Quantum Circuits
Authors:
C. R. H. McRae,
J. H. Béjanin,
Z. Pagel,
A. O. Abdallah,
T. G. McConkey,
C. T. Earnest,
J. R. Rinehart,
M. Mariantoni
Abstract:
Extensible quantum computing architectures require a large array of quantum devices operating with low error rates. A quantum processor based on superconducting quantum bits can be scaled up by stacking microchips that each perform different computational functions. In this article, we experimentally demonstrate a thermocompression bonding technology that utilizes indium films as a welding agent t…
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Extensible quantum computing architectures require a large array of quantum devices operating with low error rates. A quantum processor based on superconducting quantum bits can be scaled up by stacking microchips that each perform different computational functions. In this article, we experimentally demonstrate a thermocompression bonding technology that utilizes indium films as a welding agent to attach pairs of lithographically-patterned chips. We perform chip-to-chip indium bonding in vacuum at $190^{\circ}C$ with indium film thicknesses of $150 nm$. We characterize the dc and microwave performance of bonded devices at room and cryogenic temperatures. At $10 mK$, we find a dc bond resistance of $515 nΩmm^2$. Additionally, we show minimal microwave reflections and good transmission up to $6.8 GHz$ in a tunnel-capped, bonded device as compared to a similar uncapped device. As a proof of concept, we fabricate and measure a set of tunnel-capped superconducting resonators, demonstrating that our bonding technology can be used in quantum computing applications.
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Submitted 5 May, 2017;
originally announced May 2017.
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The Quantum Socket: Three-Dimensional Wiring for Extensible Quantum Computing
Authors:
J. H. Béjanin,
T. G. McConkey,
J. R. Rinehart,
C. T. Earnest,
C. R. H. McRae,
D. Shiri,
J. D. Bateman,
Y. Rohanizadegan,
B. Penava,
P. Breul,
S. Royak,
M. Zapatka,
A. G. Fowler,
M. Mariantoni
Abstract:
Quantum computing architectures are on the verge of scalability, a key requirement for the implementation of a universal quantum computer. The next stage in this quest is the realization of quantum error correction codes, which will mitigate the impact of faulty quantum information on a quantum computer. Architectures with ten or more quantum bits (qubits) have been realized using trapped ions and…
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Quantum computing architectures are on the verge of scalability, a key requirement for the implementation of a universal quantum computer. The next stage in this quest is the realization of quantum error correction codes, which will mitigate the impact of faulty quantum information on a quantum computer. Architectures with ten or more quantum bits (qubits) have been realized using trapped ions and superconducting circuits. While these implementations are potentially scalable, true scalability will require systems engineering to combine quantum and classical hardware. One technology demanding imminent efforts is the realization of a suitable wiring method for the control and measurement of a large number of qubits. In this work, we introduce an interconnect solution for solid-state qubits: The quantum socket. The quantum socket fully exploits the third dimension to connect classical electronics to qubits with higher density and better performance than two-dimensional methods based on wire bonding. The quantum socket is based on spring-mounted micro wires the three-dimensional wires that push directly on a micro-fabricated chip, making electrical contact. A small wire cross section (~1 mmm), nearly non-magnetic components, and functionality at low temperatures make the quantum socket ideal to operate solid-state qubits. The wires have a coaxial geometry and operate over a frequency range from DC to 8 GHz, with a contact resistance of ~150 mohm, an impedance mismatch of ~10 ohm, and minimal crosstalk. As a proof of principle, we fabricated and used a quantum socket to measure superconducting resonators at a temperature of ~10 mK.
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Submitted 31 May, 2016;
originally announced June 2016.
