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Fast learning synapses with molecular spin valves via selective magnetic potentiation
Authors:
Alberto Riminucci,
Robert Legenstein
Abstract:
We studied LSMO/Alq3/AlOx/Co molecular spin valves in view of their use as synapses in neuromorphic computing. In neuromorphic computing, the learning ability is embodied in specific changes of the synaptic weight. In this perspective, the relevant parameter is the conductance of the molecular spin valve, which plays the role of the synaptic weight. In this work we demonstrated that the conductanc…
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We studied LSMO/Alq3/AlOx/Co molecular spin valves in view of their use as synapses in neuromorphic computing. In neuromorphic computing, the learning ability is embodied in specific changes of the synaptic weight. In this perspective, the relevant parameter is the conductance of the molecular spin valve, which plays the role of the synaptic weight. In this work we demonstrated that the conductance can be changes by the repeated application of voltage pulses. We studied the parameter space of the pulses in order to determine the most effective voltage and duration of the pulses. The conductance could also be modified by aligning the magnetizations of the ferromagnetic electrodes parallel or anti parallel to each other. This phenomenon, known as magnetoresistance, affects high conductance devices while leaving low conductance devices unaffected. We studied how this weight update rule affected the speed of reward-based learning in an actor-critic framework, compared to a linear update rule. This nonlinear update performed significantly better (50 learning trials; Epochs to reach a performance goal of 0.975 was 896+/-301 in the nonlinear case and 1076+/-484 in the nonlinear case; Welch t-test: p<0.05). The linear update resulted in more learning trails with very long convergence times, which was largely absent in the nonlinear update.
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Submitted 22 March, 2019; v1 submitted 20 March, 2019;
originally announced March 2019.
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Controlling magnetoresistance by oxygen impurities in Mq3-based molecular spin valves
Authors:
Alberto Riminucci,
Zhi-Gang Yu,
Mirko Prezioso,
Raimondo Cecchini,
Ilaria Bergenti,
Patrizio Graziosi,
Valentin Alek Dediu
Abstract:
The understanding of magnetoresistance (MR) in organic spin valves (OSVs) based on molecular semiconductors is still incomplete after its demonstration more than a decade ago. While carrier concentration may play an essential role in spin transport in these devices, direct experimental evidence of its importance is lacking. We probed the role of charge carrier concentration by studying the interpl…
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The understanding of magnetoresistance (MR) in organic spin valves (OSVs) based on molecular semiconductors is still incomplete after its demonstration more than a decade ago. While carrier concentration may play an essential role in spin transport in these devices, direct experimental evidence of its importance is lacking. We probed the role of charge carrier concentration by studying the interplay between MR and multilevel resistive switching in OSVs. The present work demonstrates that all salient features of these devices, particularly the intimate correlation between MR and resistance, can be accounted for by the impurity band model, based on oxygen migration. Finally, we highlight the critical importance of carrier concentration in determining spin transport and MR in OSVs and the role of interface-mediated oxygen migration in controlling the OSVs response.
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Submitted 5 March, 2019;
originally announced March 2019.
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Linking electronic transport through a spin crossover thin film to the molecular spin state using X-ray absorption spectroscopy operando techniques
Authors:
Filip Schleicher,
Michał Studniarek,
Kuppusamy Senthil Kumar,
Etienne Urbain,
Kostantine Katcko,
**jie Chen,
Timo Frauhammer,
Marie Hervé,
Ufuk Halisdemir,
Lalit Mohan Kandpal,
Daniel Lacour,
Alberto Riminucci,
Loic Joly,
Fabrice Scheurer,
Benoit Gobaut,
Fadi Choueikani,
Edwige Otero,
Philippe Ohresser,
Jacek Arabski,
Guy Schmerber,
Wulf Wulfhekel,
Eric Beaurepaire,
Wolfgang Weber,
Samy Boukari,
Mario Ruben
, et al. (1 additional authors not shown)
Abstract:
One promising route toward encoding information is to utilize the two stable electronic states of a spin crossover molecule. However, while this property is clearly manifested in transport across single molecule junctions, evidence linking charge transport across a solid-state device to the molecular film's spin state has thus far remained indirect. To establish this link, we deploy materials-cent…
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One promising route toward encoding information is to utilize the two stable electronic states of a spin crossover molecule. However, while this property is clearly manifested in transport across single molecule junctions, evidence linking charge transport across a solid-state device to the molecular film's spin state has thus far remained indirect. To establish this link, we deploy materials-centric and device-centric operando experiments involving X-ray absorption spectroscopy. We find a correlation between the temperature dependencies of the junction resistance and the Fe spin state within the device's Fe(bpz)2(phen) molecular film. We also factually observe that the Fe molecular site mediates charge transport. Our dual operando studies reveal that transport involves a subset of molecules within an electronically heterogeneous spin crossover film. Our work confers an insight that substantially improves the state-of-the-art regarding spin crossover-based devices, thanks to a methodology that can benefit device studies of other next-generation molecular compounds.
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Submitted 3 February, 2018; v1 submitted 30 January, 2018;
originally announced January 2018.
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Enhancing Light Emission in Interface Engineered Spin-OLEDs Through Spin-Polarized Injection at High Voltages
Authors:
J. P. Prieto-Ruiz,
S. G. Miralles,
H. Prima-García,
A. Løpez-Munoz,
A. Riminucci,
P. Graziosi,
M. Cinchetti,
V. A. Dediu,
E. Coronado
Abstract:
The quest for a spin-polarized organic light emitting diode (spin-OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device two ferromagnetic electrodes are used to enhance the electroluminescence intensity of the OLED through a magnetic control of the spin polarization of the injected carriers. The major difficulty is that the driving voltage of an OLE…
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The quest for a spin-polarized organic light emitting diode (spin-OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device two ferromagnetic electrodes are used to enhance the electroluminescence intensity of the OLED through a magnetic control of the spin polarization of the injected carriers. The major difficulty is that the driving voltage of an OLED device exceeds of a few volts, while spin injection in organic materials is only efficient at low voltages. We report here the fabrication of a spin-OLED that uses a conjugated polymer as bipolar spin collector layer and ferromagnetic electrodes. Through a careful engineering of the organic/inorganic interfaces we have succeeded in obtaining a light-emitting device showing spin-valve effects at high voltages (up to 14 V). This has allowed us to detect a magneto-electroluminescence enhancement on the order of a 2.4 % at 9 V for the antiparallel configuration of the magnetic electrodes. This observation provides evidence for the long-standing fundamental issue of injecting spins from magnetic electrodes into the frontier levels of a molecular semiconductor. Our finding opens the way for the design of multifunctional devices coupling the light and the spin degrees of freedom.
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Submitted 12 April, 2019; v1 submitted 2 December, 2016;
originally announced December 2016.
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A novel picture for charge transport interpretation in epitaxial manganite thin films
Authors:
Patrizio Graziosi,
Alessandro Gambardella,
Mirko Prezioso,
Alberto Riminucci,
Ilaria Bergenti,
Daniele Pullini,
David Busquets-Mataix,
Valentin Alek Dediu
Abstract:
Transport characterizations of epitaxial La0.7Sr0.3MnO3 thin films in the thickness range 5-40 nm and 25-410 K temperature interval have been accurately collected. We show that taking into account polaronic effects allows to achieve the best ever fitting of the transport curves in the whole temperature range. The Current Carriers Density Collapse picture accurately accounts for the properties vari…
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Transport characterizations of epitaxial La0.7Sr0.3MnO3 thin films in the thickness range 5-40 nm and 25-410 K temperature interval have been accurately collected. We show that taking into account polaronic effects allows to achieve the best ever fitting of the transport curves in the whole temperature range. The Current Carriers Density Collapse picture accurately accounts for the properties variation across the metal-insulator-transition. The electron-phonon coupling parameter estimations are in a good agreement with theoretical predictions. The results promote a clear and straightforward quantitative description of the manganite films involved in charge transport device applications.
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Submitted 12 November, 2013; v1 submitted 6 August, 2013;
originally announced August 2013.
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Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation
Authors:
Patrizio Graziosi,
Mirko Prezioso,
Alessandro Gambardella,
Catherine Kitts,
Rajib Kumar Rakshit,
Alberto Riminucci,
Ilaria Bergenti,
Francesco Borgatti,
Chiara Pernechele,
Massimo Solzi,
Daniele Pullini,
David Jeronimo Busquets-Mataix,
Valentin Alek Dediu
Abstract:
We report on the optimisation of the growth conditions of manganite La0.7Sr0.3MnO3 (LSMO) thin films prepared by Channel Spark Ablation (CSA). CSA belongs to pulsed electron deposition methods and its energetic and deposition parameters are quite similar to those of pulsed laser deposition. The method has been already proven to provide manganite films with good magnetic properties, but the films w…
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We report on the optimisation of the growth conditions of manganite La0.7Sr0.3MnO3 (LSMO) thin films prepared by Channel Spark Ablation (CSA). CSA belongs to pulsed electron deposition methods and its energetic and deposition parameters are quite similar to those of pulsed laser deposition. The method has been already proven to provide manganite films with good magnetic properties, but the films were generally relatively rough (a few nm coarseness). Here we show that increasing the oxygen deposition pressure with respect to previously used regimes, reduces the surface roughness down to unit cell size while maintaining a robust magnetism. We analyse in detail the effect of other deposition parameters, like accelerating voltage, discharging energy, and temperature and provide on this basis a set of optimal conditions for the growth of atomically flat films. The thicknesses for which atomically flat surface was achieved is as high as about 10-20 nm, corresponding to films with room temperature magnetism. We believe such magnetic layers represent appealing and suitable electrodes for various spintronic devices.
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Submitted 28 December, 2012;
originally announced December 2012.
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Hanle effect missing in a prototypical organic spintronic device
Authors:
Alberto Riminucci,
Mirko Prezioso,
Chiara Pernechele,
Patrizio Graziosi,
Ilaria Bergenti,
Raimondo Cecchini,
Marco Calbucci,
Massimo Solzi,
Alek Dediu
Abstract:
We investigate spin precession (Hanle effect) in the prototypical organic spintronic giant magnetoresistance (GMR) device La0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co. The Hanle effect is not observed in measurements taken by swee** a magnetic field at different angles from the plane of the device. As possible explanations we discuss the tilting out of plane of the magnetization o…
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We investigate spin precession (Hanle effect) in the prototypical organic spintronic giant magnetoresistance (GMR) device La0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co. The Hanle effect is not observed in measurements taken by swee** a magnetic field at different angles from the plane of the device. As possible explanations we discuss the tilting out of plane of the magnetization of the electrodes, exceptionally high mobility or hot spots. Our results call for a greater understanding of spin injection and transport in such devices.
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Submitted 4 December, 2012; v1 submitted 16 November, 2012;
originally announced November 2012.
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Negative Spin Valve effects in manganite/organic based devices
Authors:
A. Riminucci,
I. Bergenti,
L. E. Hueso,
M. Murgia,
C. Taliani,
Y. Zhan,
F. Casoli,
M. P. de Jong,
V. Dediu
Abstract:
We report detailed investigations of hybrid organic-inorganic vertical spin valves. Spin polarized injection in tris(8-hydroxyquinoline) aluminum (Alq3) organic semiconductor (OS) was performed using La0.7Sr0.3MnO3 manganite as the bottom electrode and Co as the top electrode. While manganite was directly connected to the organic semiconductor layer, a thin tunnel barrier was placed between the…
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We report detailed investigations of hybrid organic-inorganic vertical spin valves. Spin polarized injection in tris(8-hydroxyquinoline) aluminum (Alq3) organic semiconductor (OS) was performed using La0.7Sr0.3MnO3 manganite as the bottom electrode and Co as the top electrode. While manganite was directly connected to the organic semiconductor layer, a thin tunnel barrier was placed between the OS and the Co electrode. A clear negative spin valve effect - low resistance for antiparallel electrodes configuration - was observed below 210 K in various devices using two different tunnel barriers: LiF and Al2O3. The magnetoresistance effect was found to be strongly asymmetric with respect to the bias voltage. Photoelectron Spectroscopy (PES) investigation of the interface between manganite and Alq3 revealed a strong interface dipole, which leads to a better matching of the metal Fermi level with Alq3 LUMO (1.1 eV) rather than with HOMO level (1.7 eV). This unequivocally indicates that the current in these devices is dominated by the electron channel, and not by holes as previously suggested. The knowledge of the energy diagram at the bottom interface allowed us to work out a semi- quantitative model explaining both negative spin valve effect and strong voltage asymmetry. This model involves a sharp energy selection of the moving charges by the very narrow LUMO level of the organic material leading to peculiar resonant effects.
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Submitted 24 January, 2007;
originally announced January 2007.
