Showing 1–10 of 10 results for author: Riedl, H

Signatures of dynamically dressed states

Authors: Katarina Boos, Sang Kyu Kim, Thomas Bracht, Friedrich Sbresny, Jan Kaspari, Moritz Cygorek, Hubert Riedl, Frederik W. Bopp, William Rauhaus, Carolin Calcagno, Jonathan J. Finley, Doris E. Reiter, Kai Mueller

Abstract: The interaction of a resonant light field with a quantum two-level system is of key interest both for fundamental quantum optics and quantum technological applications employing resonant excitation. While emission under resonant continuous-wave excitation has been well-studied, the more complex emission spectrum of dynamically dressed states, a quantum two-level system driven by resonant pulsed ex… ▽ More The interaction of a resonant light field with a quantum two-level system is of key interest both for fundamental quantum optics and quantum technological applications employing resonant excitation. While emission under resonant continuous-wave excitation has been well-studied, the more complex emission spectrum of dynamically dressed states, a quantum two-level system driven by resonant pulsed excitation, has so far been investigated in detail only theoretically. Here, we present the first experimental observation of the complete resonance fluorescence emission spectrum of a single quantum two-level system, in form of an excitonic transition in a semiconductor quantum dot, driven by finite Gaussian pulses. We observe multiple emerging sidebands as predicted by theory with an increase of their number and spectral detuning with excitation pulse intensity and a dependence of their spectral shape and intensity on the pulse length. Detuning-dependent measurements provide additional insights into the emission features. The experimental results are in excellent agreement with theoretical calculations of the emission spectra, corroborating our findings. △ Less

Submitted 25 May, 2023; originally announced May 2023.

Se Nano-Powder Conversion into Lubricious 2D Selenide Layers by Tribochemical Reactions

Authors: Philipp G. Grützmacher, Michele Cutini, Edoardo Marquis, Manel Rodríguez Ripoll, Helmut Riedl, Philip Kutrowatz, Stefan Bug, Chia-Jui Hsu, Johannes Bernardi, M. Clelia Righi, Carsten Gachot, Ali Erdemir

Abstract: Transition metal dichalcogenide (TMD) coatings have attracted enormous scientific and industrial interest due to their outstanding tribological behavior. The paradigmatic example is MoS2, even though selenides and tellurides have demonstrated superior tribological properties. Here, we describe an innovative in-operando conversion of Se nano-powders into lubricious 2D selenides by sprinkling them o… ▽ More Transition metal dichalcogenide (TMD) coatings have attracted enormous scientific and industrial interest due to their outstanding tribological behavior. The paradigmatic example is MoS2, even though selenides and tellurides have demonstrated superior tribological properties. Here, we describe an innovative in-operando conversion of Se nano-powders into lubricious 2D selenides by sprinkling them onto sliding metallic surfaces coated with Mo and W thin films. Advanced material characterization confirms the tribochemical formation of a thin tribofilm containing selenides, reducing the coefficient of friction down to below 0.1 in ambient air, levels typically reached using fully formulated oils. Ab initio molecular dynamics simulations under tribological conditions reveal the atomistic mechanisms that result in shear-induced synthesis of selenide monolayers from nano-powders. The use of Se nano-powder provides thermal stability and prevents outgassing in vacuum environments. Additionally, the high reactivity of the Se nano-powder with the transition metal coating in the conditions prevailing in the contact interface yields highly reproducible results, making it particularly suitable for the replenishment of sliding components with solid lubricants, avoiding the long-lasting problem of TMD-lubricity degradation caused by environmental molecules. The suggested straightforward approach demonstrates an unconventional and smart way to synthesize TMDs in-operando and exploit their friction- and wear reducing impact. △ Less

Submitted 27 April, 2023; originally announced April 2023.

Coherent Dynamics of the Swing-Up Excitation Technique

Authors: Katarina Boos, Friedrich Sbresny, Sang Kyu Kim, Malte Kremser, Hubert Riedl, Frederik W. Bopp, William Rauhaus, Bianca Scaparra, Klaus D. Jöns, Jonathan J. Finley, Kai Müller, Lukas Hanschke

Abstract: Develo** coherent excitation methods for quantum emitters which enable high brightness, good single-photon purity and high indistinguishability of the emitted photons has been a key challenge in the past years. While many methods have been proposed and explored, they all have specific advantages and disadvantages. In this letter, we investigate the dynamics of the recent swing-up scheme as an ex… ▽ More Develo** coherent excitation methods for quantum emitters which enable high brightness, good single-photon purity and high indistinguishability of the emitted photons has been a key challenge in the past years. While many methods have been proposed and explored, they all have specific advantages and disadvantages. In this letter, we investigate the dynamics of the recent swing-up scheme as an excitation method for a two-level system and its performance in single-photon generation. By applying two far red-detuned laser pulses, the two-level system can be prepared in the excited state with near-unity fidelity. We demonstrate the successful functionality and the coherent character of this technique using semiconductor quantum dots. Moreover, we explore the multi-dimensional parameter space of the two laser pulses to study the impact on the excitation fidelity. Finally, we investigate the performance of the scheme as an excitation method for generation of high-quality single photons. We find that the swing-up scheme itself works well and exhibits nearly perfect single-photon purity, while the observed indistinguishability in our sample is limited by the influence of the inevitable high excitation powers on the semiconductor environment of the quantum dot. △ Less

Submitted 25 November, 2022; originally announced November 2022.

Comments: 11 pages, 11 figures

Quantum dot molecule devices with optical control of charge status and electronic control of coupling

Authors: Frederik Bopp, Jonathan Rojas, Natalia Revenga, Hubert Riedl, Friedrich Sbresny, Katarina Boos, Tobias Simmet, Arash Ahmadi, David Gershoni, Jacek Kasprzak, Arne Ludwig, Stephan Reitzenstein, Andreas Wieck, Dirk Reuter, Kai Muller, Jonathan J. Finley

Abstract: Tunnel-coupled pairs of optically active quantum dots - quantum dot molecules (QDMs) - offer the possibility to combine excellent optical properties such as strong light-matter coupling with two-spin singlet-triplet ($S-T_0$) qubits having extended coherence times. The $S-T_0$ basis formed using two spins is inherently protected against electric and magnetic field noise. However, since a single ga… ▽ More Tunnel-coupled pairs of optically active quantum dots - quantum dot molecules (QDMs) - offer the possibility to combine excellent optical properties such as strong light-matter coupling with two-spin singlet-triplet ($S-T_0$) qubits having extended coherence times. The $S-T_0$ basis formed using two spins is inherently protected against electric and magnetic field noise. However, since a single gate voltage is typically used to stabilize the charge occupancy of the dots and control the inter-dot orbital couplings, operation of the $S-T_0$ qubits under optimal conditions remains challenging. Here, we present an electric field tunable QDM that can be optically charged with one (1h) or two holes (2h) on demand. We perform a four-phase optical and electric field control sequence that facilitates the sequential preparation of the 2h charge state and subsequently allows flexible control of the inter-dot coupling. Charges are loaded via optical pum** and electron tunnel ionization. We achieve one- and two-hole charging efficiencies of 93.5 $\pm$ 0.8 % and 80.5 $\pm$ 1.3 %, respectively. Combining efficient charge state preparation and precise setting of inter-dot coupling allows control of few-spin qubits, as would be required for on-demand generation of two-dimensional photonic cluster states or quantum transduction between microwaves and photons. △ Less

Submitted 20 May, 2022; originally announced May 2022.

Comments: 4 figures

Journal ref: Adv Quantum Technol. 2022, 5, 2200049

Stimulated generation of indistinguishable single photons from a quantum ladder system

Authors: Friedrich Sbresny, Lukas Hanschke, Eva Schöll, William Rauhaus, Bianca Scaparra, Katarina Boos, Hubert Riedl, Jonathan J. Finley, Klaus Jöns, Kai Müller

Abstract: We propose a scheme for the generation of highly indistinguishable single photons using semiconductor quantum dots and demonstrate its performance and potential. The scheme is based on the resonant two-photon excitation of the biexciton followed by stimulation of the biexciton to selectively prepare an exciton. Quantum-optical simulations and experiments are in good agreement and show that the sch… ▽ More We propose a scheme for the generation of highly indistinguishable single photons using semiconductor quantum dots and demonstrate its performance and potential. The scheme is based on the resonant two-photon excitation of the biexciton followed by stimulation of the biexciton to selectively prepare an exciton. Quantum-optical simulations and experiments are in good agreement and show that the scheme provides significant advantages over previously demonstrated excitation methods. The two-photon excitation of the biexciton suppresses re-excitation and enables ultra-low multi-photon errors, while the precisely timed stimulation pulse results in very low timing jitter of the photons, and consequently, high indistinguishability. Since both control laser fields are detuned from the emission energy, the scheme does not require polarization filtering, facilitating high brightness approaching unity. Moreover, the polarization of the emitted single photons is controlled by the stimulation laser field, such that the polarization of the quantum light is deterministically programmable. △ Less

Submitted 7 July, 2021; originally announced July 2021.

Comments: 6 pages, 4 figures

Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties

Authors: Fabio del Giudice, Jonathan Becker, Claudio de Rose, Markus Doeblinger, Daniel Ruhstorfer, Linnea Suomenniemi, Hubert Riedl, Jonathan J. Finley, Gregor Koblmueller

Abstract: Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si are much desired. Here, we demonstrate two site-selective synthesis methods that achieve epitaxial, high aspect ratio InAs NWs on Si with ultrathin diameters b… ▽ More Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si are much desired. Here, we demonstrate two site-selective synthesis methods that achieve epitaxial, high aspect ratio InAs NWs on Si with ultrathin diameters below 20 nm. The first approach exploits direct vapor-solid growth to tune the NW diameter by interwire spacing, mask opening size and growth time. The second scheme explores a unique reverse-reaction growth by which the sidewalls of InAs NWs are thermally decomposed under controlled arsenic flux and annealing time. Interesting kinetically limited dependencies between interwire spacing and thinning dynamics are found, yielding diameters as low as 12 nm for sparse NW arrays. We clearly verify the 1D sub-band structure in ultrathin NWs by pronounced conductance steps in low-temperature transport measurements using back-gated NW-field effect transistors. Correlated simulations reveal single- and double degenerate conductance steps, which highlight the rotational hexagonal symmetry and reproduce the experimental traces in the diffusive 1D transport limit. Modelling under the realistic back-gate configuration further evidences regimes that lead to asymmetric carrier distribution and lifts of the degeneracy in dependence of gate bias. △ Less

Submitted 5 August, 2020; originally announced August 2020.

Non-linear two-photon resonance fluorescence on a single artificial atom

Authors: P. -L. Ardelt, M. Koller, T. Simmet, L. Hanschke, A. Bechtold, A. Regler, J. Wierzbowski, H. Riedl, K. Müller, J. J. Finley

Abstract: We report two-photon resonance fluorescence of an individual semiconductor artificial atom. By non-linearly driving a single quantum dot via a two-photon transition, we probe the linewidth of the two-photon processes and show that, similar to their single-photon counterparts, they are close to being Fourier limited at low temperatures. The evolution of the population of excitonic states with the R… ▽ More We report two-photon resonance fluorescence of an individual semiconductor artificial atom. By non-linearly driving a single quantum dot via a two-photon transition, we probe the linewidth of the two-photon processes and show that, similar to their single-photon counterparts, they are close to being Fourier limited at low temperatures. The evolution of the population of excitonic states with the Rabi frequency exhibits a clear s-shaped behavior, indicative of the non-linear response via the two-photon excitation process. We model the non-linear response using a 4-level atomic system representing the manifold of excitonic and biexcitonic states of the quantum dot and show that quantitative agreement is obtained only by including the interaction with LA-phonons in the solid state environment. Finally, we demonstrate the formation of dressed states emerging from a two-photon interaction between the artificial atom and the excitation field. The non-linear optical dressing induces a mixing of all four excitonic states that facilitates the tuning of the polarization selection rules of the artificial atom. △ Less

Submitted 2 November, 2015; originally announced November 2015.

Journal ref: Phys. Rev. B 93, 165305 (2016)

Controlled tunneling induced dephasing of Rabi rotations for ultra-high fidelity hole spin initialization

Authors: P. L. Ardelt, T. Simmet, K. Müller, C. Dory, K. A. Fischer, A. Bechtold, A. Kleinkauf, H. Riedl, J. J. Finley

Abstract: We report the sub-picosecond initialization of a single heavy hole spin in a self-assembled quantum dot with >98.5 % fidelity and without external magnetic field. Using an optically adressable charge and spin storage device we tailor the relative electron and hole tunneling escape timescales from the dot and simultaneously achieve high-fidelity initialization, long hole storage times and high effi… ▽ More We report the sub-picosecond initialization of a single heavy hole spin in a self-assembled quantum dot with >98.5 % fidelity and without external magnetic field. Using an optically adressable charge and spin storage device we tailor the relative electron and hole tunneling escape timescales from the dot and simultaneously achieve high-fidelity initialization, long hole storage times and high efficiency readout via a photocurrent signal. We measure electric field-dependent Rabi oscillations of the neutral and charged exciton transitions in the ultrafast tunneling regime and demonstrate that tunneling induced dephasing (TID) of excitonic Rabi rotations is the major source for the intensity dam** of Rabi oscillations in the low Rabi frequency, low temperature regime. Our results are in very good quantitative agreement with quantum-optical simulations revealing that TID can be used to precisely measure tunneling escape times and extract changes in the Coulomb binding energies for different charge configurations of the quantum dot. Finally, we demonstrate that for sub-picosecond electron tunneling escape TID of a coherently driven exciton transition facilitates ultrafast hole spin initialization with near-unity fidelity. △ Less

Submitted 3 April, 2015; originally announced April 2015.

Journal ref: Phys. Rev. B 92, 115306 (2015)

Dissipative preparation of the exciton and biexciton in a self-assembled quantum dot on picosecond timescales

Authors: Per-Lennart Ardelt, Lukas Hanschke, Kevin A. Fischer, Kai Müller, Alexander Kleinkauf, Manuel Koller, Alexander Bechtold, Tobias Simmet, Jakob Wierzbowski, Hubert Riedl, Gerhard Abstreiter, Jonathan. J. Finley

Abstract: Pulsed resonant fluorescence is used to probe ultrafast phonon-assisted exciton and biexciton preparation in individual self-assembled InGaAs quantum dots. By driving the system using large area ($\geq10π$) near resonant optical pulses, we experimentally demonstrate how phonon mediated dissipation within the manifold of dressed excitonic states can be used to prepare the neutral exciton with a fid… ▽ More Pulsed resonant fluorescence is used to probe ultrafast phonon-assisted exciton and biexciton preparation in individual self-assembled InGaAs quantum dots. By driving the system using large area ($\geq10π$) near resonant optical pulses, we experimentally demonstrate how phonon mediated dissipation within the manifold of dressed excitonic states can be used to prepare the neutral exciton with a fidelity $\geq 70\%$. By comparing the phonon-assisted preparation with resonant Rabi oscillations we show that the phonon-mediated process provides the higher fidelity preparation for large pulse areas and is less sensitive to pulse area variations. Moreover, by detuning the laser with respect to the exciton transition we map out the spectral density for exciton coupling to the bulk LA-phonon continuum. Similar phonon mediated processes are shown to facilitate direct biexciton preparation via two photon biexciton absorption, with fidelities $>80\%$. Our results are found to be in very good quantitative agreement with simulations that model the quantum dot-phonon bath interactions with Bloch-Redfield theory. △ Less

Submitted 21 September, 2014; originally announced September 2014.

Journal ref: Phys.Rev.B 90, 241404(R) (2014)

Origin of High Temperature Oxidation Resistance of Ti-Al-Ta-N Coatings

Authors: R. Hollerweger, H. Riedl, J. Paulitsch, M. Arndt, R. Rachbauer, P. Polcik, S. Primig, P. H. Mayrhofer

Abstract: Alloying Ti-Al-N coatings with Ta has proven to enhance their hardness, thermal stability, and oxidation resistance. However, especially for arc-evaporated Ti-Al-Ta-N coatings only limited information on the detailed influence of the elements on various properties is available. Therefore, we have developed arc-evaporated Ti1-x-yAlxTayN coatings with various Al (x = 0.50 - 0.65) and Ta (y = 0.00 -… ▽ More Alloying Ti-Al-N coatings with Ta has proven to enhance their hardness, thermal stability, and oxidation resistance. However, especially for arc-evaporated Ti-Al-Ta-N coatings only limited information on the detailed influence of the elements on various properties is available. Therefore, we have developed arc-evaporated Ti1-x-yAlxTayN coatings with various Al (x = 0.50 - 0.65) and Ta (y = 0.00 - 0.15) contents. While the thermal stability of our coatings during annealing in inert He atmosphere increases with increasing Ta content, best results are obtained for specific Ta-Al ratios during oxidation. Single phase cubic Ti0.32Al0.60Ta0.08N yields a mass-gain of only ~5 % after 5 h at 950 °C in synthetic air, whereas Ti0.35Al0.65N is completely oxidized after 15 min. This is in part based on the suppressed anatase and direct rutile TiO2 formation at a defined Ta-Al content. Consequently, the anatase-to-rutile transformation, generally observed for Ti1-xAlxN, is absent. This reduces the generation of pores and cracks within the oxide scale and especially at the nitride-oxide interface, leading to the formation of a protective rutile and corundum based oxide scale. This is also reflected in the pronounced decrease in activation energy for the protective scale formation from 232 kJ/mol for Ti0.35Al0.65N down to 14.5 kJ/mol for Ti0.32Al0.60Ta0.08N. Based on our results we can conclude that especially phase transformations within the oxide scale need to be suppressed, as the connected volume changes lead to the formation of cracks and pores. △ Less

Submitted 16 April, 2014; originally announced April 2014.