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Contact resistances in trigate and FinFET devices in a Non-Equilibrium Green's Functions approach
Authors:
Léo Bourdet,
Johan Pelloux-Prayer,
François Triozon,
Mikaël Cassé,
Sylvain Barraud,
Sébastien Martinie,
Denis Rideau,
Yann-Michel Niquet
Abstract:
We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that $R_{\rm c}$ represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the qu…
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We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that $R_{\rm c}$ represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the quasi-Fermi level profile reveals that the spacers between the heavily doped source/drain and the gate are major contributors to the contact resistance. The conductance is indeed limited by the poor electrostatic control over the carrier density under the spacers. We then disentangle the ballistic and diffusive components of $R_{\rm c}$, and analyze the impact of different design parameters (cross section and do** profile in the contacts) on the electrical performances of the devices. The contact resistance and variability rapidly increase when the cross sectional area of the channel goes below $\simeq 50$ nm$^2$. We also highlight the role of the charges trapped at the interface between silicon and the spacer material.
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Submitted 24 February, 2016;
originally announced February 2016.
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Remote Surface Roughness Scattering in FDSOI devices with high-$κ$/SiO$_2$ gate stacks
Authors:
Y. M. Niquet,
I. Duchemin,
V. -H. Nguyen,
F. Triozon,
D. Rideau
Abstract:
We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO$_2$ and SiO$_2$/HfO$_2$ interfaces. Therefore, surface roughness and remote surface roughness can not be…
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We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO$_2$ and SiO$_2$/HfO$_2$ interfaces. Therefore, surface roughness and remote surface roughness can not be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO$_2$ interface and SiO$_2$ thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-$κ$/Metal gate technologies.
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Submitted 8 April, 2015;
originally announced April 2015.
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Quantum calculations of the carrier mobility in thin films: Methodology, Matthiessen's rule and comparison with semi-classical approaches
Authors:
Yann-Michel Niquet,
Viet-Hung Nguyen,
François Triozon,
Ivan Duchemin,
Olivier Nier,
Denis Rideau
Abstract:
We discuss the calculation of the carrier mobility in silicon films within the quantum Non-Equilibrium Green's Functions (NEGF) framework. We introduce a new method for the extraction of the carrier mobility that is free from contact resistance contamination, and provides accurate mobilities at a reasonable cost, with minimal needs for ensemble averages. We then introduce a new paradigm for the de…
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We discuss the calculation of the carrier mobility in silicon films within the quantum Non-Equilibrium Green's Functions (NEGF) framework. We introduce a new method for the extraction of the carrier mobility that is free from contact resistance contamination, and provides accurate mobilities at a reasonable cost, with minimal needs for ensemble averages. We then introduce a new paradigm for the definition of the partial mobility $μ_{M}$ associated with a given elastic scattering mechanism "M", taking phonons (PH) as a reference ($μ_{M}^{-1}=μ_{PH+M}^{-1}-μ_{PH}^{-1}$). We argue that this definition makes better sense in a quantum transport framework as it is free from long range interference effects that can appear in purely ballistic calculations. As a matter of fact, these mobilities satisfy Matthiessen's rule for three mechanisms [surface roughness (SR), remote Coulomb scattering (RCS) and phonons] much better than the usual, single mechanism calculations. We also discuss the problems raised by the long range spatial correlations in the RCS disorder. Finally, we compare semi-classical Kubo-Greenwood (KG) and quantum NEGF calculations. We show that KG and NEGF are in reasonable agreement for phonon and RCS, yet not for SR. We point to possible deficiencies in the treatment of SR scattering in KG, opening the way for further improvements.
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Submitted 7 October, 2013;
originally announced October 2013.
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Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys
Authors:
Y. M. Niquet,
D. Rideau,
C. Tavernier,
H. Jaouen,
X. Blase
Abstract:
We discuss a model for the on-site matrix elements of the sp3d5s* tight-binding hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model features on-site, off-diagonal couplings between the s, p and d orbitals, and is able to reproduce the effects of arbitrary strains on the band energies and effective masses in the full Brillouin zone. It introduces only a few addit…
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We discuss a model for the on-site matrix elements of the sp3d5s* tight-binding hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model features on-site, off-diagonal couplings between the s, p and d orbitals, and is able to reproduce the effects of arbitrary strains on the band energies and effective masses in the full Brillouin zone. It introduces only a few additional parameters and is free from any ambiguities that might arise from the definition of the macroscopic strains as a function of the atomic positions. We apply this model to silicon, germanium and their alloys as an illustration. In particular, we make a detailed comparison of tight-binding and ab initio data on strained Si, Ge and SiGe.
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Submitted 3 February, 2009;
originally announced February 2009.
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Strained Si, Ge and SiGe alloys modeling with full-zone k.p method optimized from first principle calculation
Authors:
D. Rideau,
M. Feraille,
L. Ciampolini,
M. Minondo,
C. Tavernier,
H. Jaouen,
A. Ghetti
Abstract:
The electronic energy band structure of strained and unstrained Si, Ge and SiGe alloys is examined in this work using thirty-level k.p analysis. The energy bands are at first obtained with ab initio calculations based on the Local-Density-Approximation of Density-Functional Theory, including a GW correction and relativistic effects. The so-calculated band structure is then used to extract the un…
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The electronic energy band structure of strained and unstrained Si, Ge and SiGe alloys is examined in this work using thirty-level k.p analysis. The energy bands are at first obtained with ab initio calculations based on the Local-Density-Approximation of Density-Functional Theory, including a GW correction and relativistic effects. The so-calculated band structure is then used to extract the unknown k.p fitting parameters with a conjugate-gradient optimization procedure. In a similar manner, the results of ab initio calculations for strained materials are used to fit the unknown deformation potentials that are included in the present k.p Hamiltonian following the Pikus and Bir correction scheme. We show that the present k.p model is an efficient numerical method, as far as computational time is concerned, that reproduces accurately the overall band structure, as well as the bulk effective density of states and the carrier effective masses, for both strained and unstrained materials. As an application, the present thirty-level k.p model is used to describe the band offsets and the variations of the carrier effective masses in a strained material, a Si(1-x)Gex/Si(1-y)Gey layer system.
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Submitted 1 September, 2006; v1 submitted 20 July, 2006;
originally announced July 2006.
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X-Ray Scattering Evidence for Macroscopic Strong Pinning Centers in the Sliding CDW state of NbSe_3
Authors:
D. Rideau,
P. Monceau,
R. Currat,
H. Requardt,
F. Nad,
J. E. Lorenzo,
S. Brazovskii,
C. Detlefs,
G. Grubel
Abstract:
Using high-resolution X-ray scattering techniques, we measure the variation, q(x), of the position in reciprocal space of the CDW satellite, in the sliding state, along the length of NbSe_3 whiskers. We show that structural defects and intentionally X-ray radiation-damaged regions increase locally the CDW pinning force, and induce CDW phase distortions which are consistent with those observed ne…
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Using high-resolution X-ray scattering techniques, we measure the variation, q(x), of the position in reciprocal space of the CDW satellite, in the sliding state, along the length of NbSe_3 whiskers. We show that structural defects and intentionally X-ray radiation-damaged regions increase locally the CDW pinning force, and induce CDW phase distortions which are consistent with those observed near contacts. Using the semi-microscopic model from Brazovskii describing the normal-condensed carrier conversion, with spatially varying parameters, we account for the experimental spatial dependence of the CDW phase gradient near both types of defects.
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Submitted 7 August, 2000;
originally announced August 2000.
