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RowPress Vulnerability in Modern DRAM Chips
Authors:
Haocong Luo,
Ataberk Olgun,
A. Giray Yağlıkçı,
Yahya Can Tuğrul,
Steve Rhyner,
Meryem Banu Cavlak,
Joël Lindegger,
Mohammad Sadrosadati,
Onur Mutlu
Abstract:
Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowHammer. RowPress induces bitflips by kee** a DRAM row open for a long period of time instead of repeatedly opening and closing the row. We experimentally characterize RowPress bitflips, showing their widespread existenc…
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Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowHammer. RowPress induces bitflips by kee** a DRAM row open for a long period of time instead of repeatedly opening and closing the row. We experimentally characterize RowPress bitflips, showing their widespread existence in commodity off-the-shelf DDR4 DRAM chips. We demonstrate RowPress bitflips in a real system that already has RowHammer protection, and propose effective mitigation techniques that protect DRAM against both RowHammer and RowPress.
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Submitted 23 June, 2024;
originally announced June 2024.
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Analysis of Distributed Optimization Algorithms on a Real Processing-In-Memory System
Authors:
Steve Rhyner,
Haocong Luo,
Juan Gómez-Luna,
Mohammad Sadrosadati,
Jiawei Jiang,
Ataberk Olgun,
Harshita Gupta,
Ce Zhang,
Onur Mutlu
Abstract:
Machine Learning (ML) training on large-scale datasets is a very expensive and time-consuming workload. Processor-centric architectures (e.g., CPU, GPU) commonly used for modern ML training workloads are limited by the data movement bottleneck, i.e., due to repeatedly accessing the training dataset. As a result, processor-centric systems suffer from performance degradation and high energy consumpt…
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Machine Learning (ML) training on large-scale datasets is a very expensive and time-consuming workload. Processor-centric architectures (e.g., CPU, GPU) commonly used for modern ML training workloads are limited by the data movement bottleneck, i.e., due to repeatedly accessing the training dataset. As a result, processor-centric systems suffer from performance degradation and high energy consumption. Processing-In-Memory (PIM) is a promising solution to alleviate the data movement bottleneck by placing the computation mechanisms inside or near memory.
Our goal is to understand the capabilities and characteristics of popular distributed optimization algorithms on real-world PIM architectures to accelerate data-intensive ML training workloads. To this end, we 1) implement several representative centralized distributed optimization algorithms on UPMEM's real-world general-purpose PIM system, 2) rigorously evaluate these algorithms for ML training on large-scale datasets in terms of performance, accuracy, and scalability, 3) compare to conventional CPU and GPU baselines, and 4) discuss implications for future PIM hardware and the need to shift to an algorithm-hardware codesign perspective to accommodate decentralized distributed optimization algorithms.
Our results demonstrate three major findings: 1) Modern general-purpose PIM architectures can be a viable alternative to state-of-the-art CPUs and GPUs for many memory-bound ML training workloads, when operations and datatypes are natively supported by PIM hardware, 2) the importance of carefully choosing the optimization algorithm that best fit PIM, and 3) contrary to popular belief, contemporary PIM architectures do not scale approximately linearly with the number of nodes for many data-intensive ML training workloads. To facilitate future research, we aim to open-source our complete codebase.
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Submitted 10 April, 2024;
originally announced April 2024.
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Read Disturbance in High Bandwidth Memory: A Detailed Experimental Study on HBM2 DRAM Chips
Authors:
Ataberk Olgun,
Majd Osseiran,
Abdullah Giray Yaglikci,
Yahya Can Tugrul,
Haocong Luo,
Steve Rhyner,
Behzad Salami,
Juan Gomez Luna,
Onur Mutlu
Abstract:
We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Bandwidth Memory (HBM). Detailed characterization of six real HBM2 DRAM chips in two different FPGA boards shows that (1) the read disturbance vulnerability significantly varies between different HBM2 chips and between dif…
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We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Bandwidth Memory (HBM). Detailed characterization of six real HBM2 DRAM chips in two different FPGA boards shows that (1) the read disturbance vulnerability significantly varies between different HBM2 chips and between different components (e.g., 3D-stacked channels) inside a chip, (2) DRAM rows at the end and in the middle of a bank are more resilient to read disturbance, (3) fewer additional activations are sufficient to induce more read disturbance bitflips in a DRAM row if the row exhibits the first bitflip at a relatively high activation count, (4) a modern HBM2 chip implements undocumented read disturbance defenses that track potential aggressor rows based on how many times they are activated. We describe how our findings could be leveraged to develop more powerful read disturbance attacks and more efficient defense mechanisms. We open source all our code and data to facilitate future research at https://github.com/CMU-SAFARI/HBM-Read-Disturbance.
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Submitted 2 May, 2024; v1 submitted 23 October, 2023;
originally announced October 2023.
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ABACuS: All-Bank Activation Counters for Scalable and Low Overhead RowHammer Mitigation
Authors:
Ataberk Olgun,
Yahya Can Tugrul,
Nisa Bostanci,
Ismail Emir Yuksel,
Haocong Luo,
Steve Rhyner,
Abdullah Giray Yaglikci,
Geraldo F. Oliveira,
Onur Mutlu
Abstract:
We introduce ABACuS, a new low-cost hardware-counter-based RowHammer mitigation technique that performance-, energy-, and area-efficiently scales with worsening RowHammer vulnerability. We observe that both benign workloads and RowHammer attacks tend to access DRAM rows with the same row address in multiple DRAM banks at around the same time. Based on this observation, ABACuS's key idea is to use…
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We introduce ABACuS, a new low-cost hardware-counter-based RowHammer mitigation technique that performance-, energy-, and area-efficiently scales with worsening RowHammer vulnerability. We observe that both benign workloads and RowHammer attacks tend to access DRAM rows with the same row address in multiple DRAM banks at around the same time. Based on this observation, ABACuS's key idea is to use a single shared row activation counter to track activations to the rows with the same row address in all DRAM banks. Unlike state-of-the-art RowHammer mitigation mechanisms that implement a separate row activation counter for each DRAM bank, ABACuS implements fewer counters (e.g., only one) to track an equal number of aggressor rows.
Our evaluations show that ABACuS securely prevents RowHammer bitflips at low performance/energy overhead and low area cost. We compare ABACuS to four state-of-the-art mitigation mechanisms. At a near-future RowHammer threshold of 1000, ABACuS incurs only 0.58% (0.77%) performance and 1.66% (2.12%) DRAM energy overheads, averaged across 62 single-core (8-core) workloads, requiring only 9.47 KiB of storage per DRAM rank. At the RowHammer threshold of 1000, the best prior low-area-cost mitigation mechanism incurs 1.80% higher average performance overhead than ABACuS, while ABACuS requires 2.50X smaller chip area to implement. At a future RowHammer threshold of 125, ABACuS performs very similarly to (within 0.38% of the performance of) the best prior performance- and energy-efficient RowHammer mitigation mechanism while requiring 22.72X smaller chip area. ABACuS is freely and openly available at https://github.com/CMU-SAFARI/ABACuS.
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Submitted 2 May, 2024; v1 submitted 15 October, 2023;
originally announced October 2023.
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RowPress: Amplifying Read Disturbance in Modern DRAM Chips
Authors:
Haocong Luo,
Ataberk Olgun,
A. Giray Yağlıkçı,
Yahya Can Tuğrul,
Steve Rhyner,
Meryem Banu Cavlak,
Joël Lindegger,
Mohammad Sadrosadati,
Onur Mutlu
Abstract:
Memory isolation is critical for system reliability, security, and safety. Unfortunately, read disturbance can break memory isolation in modern DRAM chips. For example, RowHammer is a well-studied read-disturb phenomenon where repeatedly opening and closing (i.e., hammering) a DRAM row many times causes bitflips in physically nearby rows.
This paper experimentally demonstrates and analyzes anoth…
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Memory isolation is critical for system reliability, security, and safety. Unfortunately, read disturbance can break memory isolation in modern DRAM chips. For example, RowHammer is a well-studied read-disturb phenomenon where repeatedly opening and closing (i.e., hammering) a DRAM row many times causes bitflips in physically nearby rows.
This paper experimentally demonstrates and analyzes another widespread read-disturb phenomenon, RowPress, in real DDR4 DRAM chips. RowPress breaks memory isolation by kee** a DRAM row open for a long period of time, which disturbs physically nearby rows enough to cause bitflips. We show that RowPress amplifies DRAM's vulnerability to read-disturb attacks by significantly reducing the number of row activations needed to induce a bitflip by one to two orders of magnitude under realistic conditions. In extreme cases, RowPress induces bitflips in a DRAM row when an adjacent row is activated only once. Our detailed characterization of 164 real DDR4 DRAM chips shows that RowPress 1) affects chips from all three major DRAM manufacturers, 2) gets worse as DRAM technology scales down to smaller node sizes, and 3) affects a different set of DRAM cells from RowHammer and behaves differently from RowHammer as temperature and access pattern changes.
We demonstrate in a real DDR4-based system with RowHammer protection that 1) a user-level program induces bitflips by leveraging RowPress while conventional RowHammer cannot do so, and 2) a memory controller that adaptively keeps the DRAM row open for a longer period of time based on access pattern can facilitate RowPress-based attacks. To prevent bitflips due to RowPress, we describe and evaluate a new methodology that adapts existing RowHammer mitigation techniques to also mitigate RowPress with low additional performance overhead. We open source all our code and data to facilitate future research on RowPress.
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Submitted 28 March, 2024; v1 submitted 29 June, 2023;
originally announced June 2023.
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An Experimental Analysis of RowHammer in HBM2 DRAM Chips
Authors:
Ataberk Olgun,
Majd Osseiran,
Abdullah Giray Ya{ğ}lık{c}ı,
Yahya Can Tuğrul,
Haocong Luo,
Steve Rhyner,
Behzad Salami,
Juan Gomez Luna,
Onur Mutlu
Abstract:
RowHammer (RH) is a significant and worsening security, safety, and reliability issue of modern DRAM chips that can be exploited to break memory isolation. Therefore, it is important to understand real DRAM chips' RH characteristics. Unfortunately, no prior work extensively studies the RH vulnerability of modern 3D-stacked high-bandwidth memory (HBM) chips, which are commonly used in modern GPUs.…
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RowHammer (RH) is a significant and worsening security, safety, and reliability issue of modern DRAM chips that can be exploited to break memory isolation. Therefore, it is important to understand real DRAM chips' RH characteristics. Unfortunately, no prior work extensively studies the RH vulnerability of modern 3D-stacked high-bandwidth memory (HBM) chips, which are commonly used in modern GPUs.
In this work, we experimentally characterize the RH vulnerability of a real HBM2 DRAM chip. We show that 1) different 3D-stacked channels of HBM2 memory exhibit significantly different levels of RH vulnerability (up to 79% difference in bit error rate), 2) the DRAM rows at the end of a DRAM bank (rows with the highest addresses) exhibit significantly fewer RH bitflips than other rows, and 3) a modern HBM2 DRAM chip implements undisclosed RH defenses that are triggered by periodic refresh operations. We describe the implications of our observations on future RH attacks and defenses and discuss future work for understanding RH in 3D-stacked memories.
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Submitted 29 May, 2023;
originally announced May 2023.
