Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
Authors:
V. Braza,
T. Ben,
S. Flores,
D. F. Reyes,
A. Gallego-Carro,
L. Stanojevic,
Z. Gacevic,
N. Ruíz-Marín,
J. M. Ulloa,
D. González
Abstract:
Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar cells. However, due to strong surface Sb segregation, experimental Sb composition profiles differ greatly from the nominal square-wave design. In this work, the improvement of the interface quality of these SLs in terms…
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Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar cells. However, due to strong surface Sb segregation, experimental Sb composition profiles differ greatly from the nominal square-wave design. In this work, the improvement of the interface quality of these SLs in terms of compositional abruptness and surface roughness has been evaluated by implementing different growth interruption times under Sb4/As4 (soaking) and As4 (desorption) overpressure conditions before and after the growth of GaAsSb layers, respectively. The combined effects of both processes enhance Sb distribution, achieving squarer compositional profiles with reduced surface roughness interfaces. It has been found that the improvement in compositional abruptness is quantitatively much higher at the lower interface, during soaking, than at the upper interface during desorption. Conversely, a larger decrease in surface roughness is achieved at the upper interface than at the lower interface. Fitting of the Sb segregation profiles using the 3-layer kinetic fluid model has shown that the increase in Sb incorporation rate is due to the decrease in segregation energy, presumably to changes in the surface reconstruction of the floating layer at the surface.
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Submitted 31 January, 2024;
originally announced January 2024.
Strain-balanced type-II superlattices for efficient multi-junction solar cells
Authors:
A. Gonzalo,
A. D. Utrilla,
D. F. Reyes,
V. Braza,
J. M. Llorens,
D. Fuertes Marron,
B. Alen,
T. Ben,
D. Gonzalez,
A. Guzman,
A. Hierro,
J. M. Ulloa
Abstract:
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth problems related to the concomitant presence of bo…
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We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth problems related to the concomitant presence of both elements in GaAsSbN layers. This approach not only reduces clustering and improves crystal quality and interface abruptness, but also allows for additional control of the effective bandgap in the 1.0-1.15 eV spectral region through the SL period thickness. The optimized SL structure exhibits a type-II band alignment and strong electronic coupling at 0 V. Both effects cooperate to increase the minority carrier collection and leads to a net strong enhancement of the external quantum efficiency (EQE) under photovoltaic conditions with respect to bulk layers of equivalent thickness.
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Submitted 21 December, 2016; v1 submitted 15 December, 2016;
originally announced December 2016.
