-
InP nanocrystals on silicon for optoelectronic applications
Authors:
Slawomir Prucnal,
Shengqiang Zhou,
Xin Ou,
Helfried Reuther,
Maciej Oskar Liedke,
Arndt Mücklich,
Manfred Helm,
Jerzy Zuk,
Marcin Turek,
Krzysztof Pyszniak,
Wolfgang Skorupa
Abstract:
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.g. a direct ba…
▽ More
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.g. a direct band gap III-V compound semiconductor material. In the paper we present the synthesis of single crystalline InP nanodots (NDs) on silicon using combined ion implantation and millisecond flash lamp annealing techniques. The optical and microstructural investigations reveal the growth of high-quality (100)-oriented InP nanocrystals. The current-voltage measurements confirm the formation of an n-p heterojunction between the InP NDs and silicon. The main advantage of our method is its integration with large-scale silicon technology, which allows applying it for Si-based optoelectronic devices.
△ Less
Submitted 11 November, 2012;
originally announced November 2012.
-
Substrate effect on the resistive switching in BiFeO3 thin films
Authors:
Yao Shuai,
Xin Ou,
Chuangui Wu,
Wanli Zhang,
Shengqiang Zhou,
Danilo Buerger,
Helfried Reuther,
Stefan Slesazeck,
Thomas Mikolajick,
Manfred Helm,
Heidemarie Schmidt
Abstract:
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top…
▽ More
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors.
△ Less
Submitted 26 September, 2012;
originally announced September 2012.
-
Effect of He-ion irradiation on Fe-Cr alloys: Mössbauer - effect study
Authors:
S. M. Dubiel,
J. Cieslak,
H. Reuther
Abstract:
Effect of He ion irradiation on three model Fe(100-x)Cr(x) alloys (x =5.8, 10.75 and 15.15) was investigated with the conversion electron Mössbauer spectroscopy. The study of the alloys irradiated with 25 keV ions revealed that the strongest effect occured in the Fe(84.85)Cr(15.15) sample where an inversion of a short-range-order (SRO) parameter was found. Consequently, the investigation of the in…
▽ More
Effect of He ion irradiation on three model Fe(100-x)Cr(x) alloys (x =5.8, 10.75 and 15.15) was investigated with the conversion electron Mössbauer spectroscopy. The study of the alloys irradiated with 25 keV ions revealed that the strongest effect occured in the Fe(84.85)Cr(15.15) sample where an inversion of a short-range-order (SRO) parameter was found. Consequently, the investigation of the influence of the irradiation dose, D, was carried out on the chromium-most concentrated sample showing that the average hyperfine field, <B>, the average angle between the normal to the sample's surface and the magnetization vector, <theta>, as well as the actual distribution of Fe/Cr atoms, as expressed by SRO parameters, strongly depend on D. In particular: (a) <B> increases with D, and its maximum increase corresponds to a decrease of Cr content within the two-shell volume around the probe 57Fe nuclei by ~2.3 at%, <theta> decreases by ~13 degree at maximum, (c) SRO-parameter averaged over the two-shell volume increases with D from weakly negative value (indicative of Cr atoms clustering) to weakly positive value (indicative of Cr atoms ordering). The inversion takes place at D ca. 7 dpa.
△ Less
Submitted 23 May, 2012;
originally announced May 2012.
-
GaMnN epitaxial films with high magnetization
Authors:
Gerd Kunert,
Sylwia Dobkowska,
Tian Li,
Helfried Reuther,
Carsten Kruse,
Stephan Figge,
Rafal Jakiela,
Alberta Bonanni,
Jörg Grenzer,
Wiktor Stefanowicz,
Maciej Sawicki,
Tomasz Dietl,
Detlef Hommel
Abstract:
We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribu…
▽ More
We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm^3.
△ Less
Submitted 17 May, 2012; v1 submitted 15 May, 2012;
originally announced May 2012.
-
Reduced leakage current in BiFeO3 thin films with rectifying contacts
Authors:
Yao Shuai,
Shengqiang Zhou,
Stephan Streit,
Helfried Reuther,
Danilo Bürger,
Stefan Slesazeck,
Thomas Mikolajick,
Manfred Helm,
Heidemarie Schmidt
Abstract:
BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has t…
▽ More
BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.
△ Less
Submitted 19 May, 2011;
originally announced May 2011.
-
Decisive role of oxygen vacancy in ferroelectric vs. ferromagnetic Mn-doped BaTiO3 thin films
Authors:
Yao Shuai,
Shengqiang Zhou,
Danilo Bürger,
Helfried Reuther,
Ilona Skorupa,
Varun John,
Manfred Helm,
Heidemarie Schmidt
Abstract:
Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a lo…
▽ More
Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a low leakage current, increased dielectric loss, and a decreased dielectric constant. Ferromagnetism is seen on Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure and is attributed to the formation of bound magnetic polarons (BMPs). This BMP formation is enhanced by oxygen vacancies. The present work confirms a theoretical work from C. Ederer and N. Spaldin on ferroelectric perovskites [Nature Mat. 3, 849 (2004)] which shows that the existence of ferroelectricity is incompatible with the existence of a spontaneous magnetization in Mn-doped BaTiO3 thin films.
△ Less
Submitted 27 April, 2011;
originally announced April 2011.
-
Fe-implanted ZnO: Magnetic precipitates versus dilution
Authors:
Shengqiang Zhou,
K. Potzger,
G. Talut,
H. Reuther,
J. von Borany,
R. Groetzschel,
W. Skorupa,
M. Helm,
J. Fassbender,
N. Volbers,
M. Lorenz,
T. Herrmannsdoerfer
Abstract:
Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors argue that the observed ferromagnetism stems from ferromagnetic precipitates or spinodal decomposition rather than from carrier mediated magnetic impurities, as required for a diluted magnetic semiconductor. In the present paper we answer this question for Fe-implanted ZnO single cry…
▽ More
Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors argue that the observed ferromagnetism stems from ferromagnetic precipitates or spinodal decomposition rather than from carrier mediated magnetic impurities, as required for a diluted magnetic semiconductor. In the present paper we answer this question for Fe-implanted ZnO single crystals comprehensively. Different implantation fluences and temperatures and post-implantation annealing temperatures have been chosen in order to evaluate the structural and magnetic properties over a wide range of parameters. Three different regimes with respect to the Fe concentration and the process temperature are found: 1) Disperse Fe$^{2+}$ and Fe$^{3+}$ at low Fe concentrations and low processing temperatures, 2) FeZn$_2$O$_4$ at very high processing temperatures and 3) an intermediate regime with a co-existence of metallic Fe (Fe$^0$) and ionic Fe (Fe$^{2+}$ and Fe$^{3+}$). Ferromagnetism is only observed in the latter two cases, where inverted ZnFe$_2$O$_4$ and $α$-Fe nanocrystals are the origin of the observed ferromagnetic behavior, respectively. The ionic Fe in the last case could contribute to a carrier mediated coupling. However, their separation is too large to couple ferromagnetically due to the lack of p-type carrier. For comparison investigations of Fe-implanted epitaxial ZnO thin films are presented.
△ Less
Submitted 4 August, 2009;
originally announced August 2009.
-
Ferromagnetism and suppression of metallic clusters in Fe implanted ZnO - a phenomenon related to defects?
Authors:
Shengqiang Zhou,
K. Potzger,
G. Talut,
H. Reuther,
K. Kuepper,
J. Grenzer,
Qingyu Xu,
A. Muecklich M. Helm,
J. Fassbender,
E. Arenholz
Abstract:
We investigated ZnO(0001) single crystals annealed in high vacuum with respect to their magnetic properties and cluster formation tendency after implant-do** with Fe. While metallic Fe cluster formation is suppressed, no evidence for the relevance of the Fe magnetic moment for the observed ferromagnetism was found. The latter along with the cluster suppression is discussed with respect to defe…
▽ More
We investigated ZnO(0001) single crystals annealed in high vacuum with respect to their magnetic properties and cluster formation tendency after implant-do** with Fe. While metallic Fe cluster formation is suppressed, no evidence for the relevance of the Fe magnetic moment for the observed ferromagnetism was found. The latter along with the cluster suppression is discussed with respect to defects in the ZnO host matrix, since the crystalline quality of the substrates was lowered due to the preparation as observed by x-ray diffraction.
△ Less
Submitted 4 August, 2009;
originally announced August 2009.
-
Suppression of secondary phase formation in Fe implanted ZnO single crystals
Authors:
K. Potzger,
Shengqiang Zhou,
H. Reuther,
K. Kuepper,
G. Talut,
M. Helm,
J. Fassbender,
J. D. Denlinger
Abstract:
Unwanted secondary phases are one of the major problems in diluted magnetic semiconductor creation. Here, the authors show possibilities to avoid such phases in Fe implanted and postannealed ZnO(0001) single crystals. While -Fe nanoparticles are formed after such do** in as-polished crystals, high temperature (1273 K) annealing in O2 or high vacuum before implantation suppresses these phases.…
▽ More
Unwanted secondary phases are one of the major problems in diluted magnetic semiconductor creation. Here, the authors show possibilities to avoid such phases in Fe implanted and postannealed ZnO(0001) single crystals. While -Fe nanoparticles are formed after such do** in as-polished crystals, high temperature (1273 K) annealing in O2 or high vacuum before implantation suppresses these phases. Thus, the residual saturation magnetization in the preannealed ZnO single crystals is about 20 times lower than for the as-polished ones and assigned to indirect coupling between isolated Fe ions rather than to clusters.
△ Less
Submitted 4 August, 2009;
originally announced August 2009.
-
Crystallographically oriented magnetic ZnFe2O4 nanoparticles synthesized by Fe implantation into ZnO
Authors:
Shengqiang Zhou,
K. Potzger,
H. Reuther,
G. Talut,
F. Eichhorn,
J. von Borany,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
In this paper, a correlation between structural and magnetic properties of Fe implanted ZnO is presented. High fluence Fe^+ implantation into ZnO leads to the formation of superparamagnetic alpha-Fe nanoparticles. High vacuum annealing at 823 K results in the growth of alpha-Fe particles, but the annealing at 1073 K oxidized the majority of the Fe nanoparticles. After a long term annealing at 10…
▽ More
In this paper, a correlation between structural and magnetic properties of Fe implanted ZnO is presented. High fluence Fe^+ implantation into ZnO leads to the formation of superparamagnetic alpha-Fe nanoparticles. High vacuum annealing at 823 K results in the growth of alpha-Fe particles, but the annealing at 1073 K oxidized the majority of the Fe nanoparticles. After a long term annealing at 1073 K, crystallographically oriented ZnFe2O4 nanoparticles were formed inside ZnO with the orientation relationship of ZnFe2O4(111)[110]//ZnO(0001)[1120]. These ZnFe2O4 nanoparticles show a hysteretic behavior upon magnetization reversal at 5 K.
△ Less
Submitted 18 December, 2006;
originally announced December 2006.
-
Absence of ferromagnetism in V-implanted ZnO single crystals
Authors:
Shengqiang Zhou,
K. Potzger,
H. Reuther,
K. Kuepper,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. T…
▽ More
The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. The V ions show a thermal mobility as revealed by depth profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction revealed no secondary phase formation which indicates the substitution of V onto Zn site. However in all samples no pronounced ferromagnetism was observed down to 5 K by a superconducting quantum interference device magnetometer.
△ Less
Submitted 14 December, 2006;
originally announced December 2006.
-
Fe implanted ferromagnetic ZnO
Authors:
K. Potzger,
Shengqiang Zhou,
H. Reuther,
A. Muecklich,
F. Eichhorn,
N. Schell,
W. Skorupa,
M. Helm,
J. Fassbender,
T. Herrmannsdoerfer,
T. P. Papageorgiou
Abstract:
Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-do** with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe…
▽ More
Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-do** with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4x10^15 cm^-2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor (DMS).
△ Less
Submitted 13 December, 2005;
originally announced December 2005.
