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Infrastructure for Detector Research and Development towards the International Linear Collider
Authors:
J. Aguilar,
P. Ambalathankandy,
T. Fiutowski,
M. Idzik,
Sz. Kulis,
D. Przyborowski,
K. Swientek,
A. Bamberger,
M. Köhli,
M. Lupberger,
U. Renz,
M. Schumacher,
Andreas Zwerger,
A. Calderone,
D. G. Cussans,
H. F. Heath,
S. Mandry,
R. F. Page,
J. J. Velthuis,
D. Attié,
D. Calvet,
P. Colas,
X. Coppolani,
Y. Degerli,
E. Delagnes
, et al. (252 additional authors not shown)
Abstract:
The EUDET-project was launched to create an infrastructure for develo** and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infras…
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The EUDET-project was launched to create an infrastructure for develo** and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.
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Submitted 23 January, 2012;
originally announced January 2012.
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Test beam Characterizations of 3D Silicon Pixel detectors
Authors:
M. Mathes,
M. Cristinziani,
C. Da Via',
M. Garcia-Sciveres,
K. Einsweiler,
J. Hasi,
C. Kenney,
Sherwood Parker,
L. Reuen,
M. Ruspa,
J. Velthuis,
S. Watts,
N. Wermes
Abstract:
3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders them particularly interesting to be used in environments where standard silicon detectors have limitations, such as for example the radiation environment expect…
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3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders them particularly interesting to be used in environments where standard silicon detectors have limitations, such as for example the radiation environment expected in an LHC upgrade. For the first time, several 3D sensors were assembled as hybrid pixel detectors using the ATLAS-pixel front-end chip and readout electronics. Devices with different electrode configurations have been characterized in a 100 GeV pion beam at the CERN SPS. Here we report results on unirradiated devices with three 3D electrodes per 50 x 400 um2 pixel area. Full charge collection is obtained already with comparatively low bias voltages around 10 V. Spatial resolution with binary readout is obtained as expected from the cell dimensions. Efficiencies of 95.9% +- 0.1 % for tracks parallel to the electrodes and of 99.9% +- 0.1 % at 15 degrees are measured. The homogeneity of the efficiency over the pixel area and charge sharing are characterized.
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Submitted 20 June, 2008;
originally announced June 2008.
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Status of a DEPFET pixel system for the ILC vertex detector
Authors:
M. Trimpl,
M. Koch,
R. Kohrs,
H. Krueger,
P. Lodomez,
L. Reuen,
C. Sandow,
E. v. Toerne,
J. J. Velthuis,
N. Wermes,
L. Andricek,
H. G. Moser,
R. H. Richter,
G. Lutz,
F. Giesen,
P. Fischer,
I. Peric
Abstract:
We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micro…
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We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micron and a row wise read out with line rates of 20MHz and more. The targeted noise performance for the DEPFET technology is in the range of ENC=100 e-. The functionality of the system has been demonstrated using different radioactive sources in an energy range from 6 to 40keV. In recent test beam experiments using 6GeV electrons, a signal-to-noise ratio of S/N~120 has been achieved with present sensors being 450 micron thick. For improved DEPFET systems using 50 micron thin sensors in future, a signal-to-noise of 40 is expected.
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Submitted 6 December, 2006; v1 submitted 13 June, 2006;
originally announced June 2006.
