Showing 1–8 of 8 results for author: Repicky, J J

Observation of Skyrmion Bubbles in Multilayer [Pt/Co/Cu]n using spin-polarized STM

Authors: Jacob J. Repicky, Brad Goff, Shuyu Cheng, Roland K. Kawakami, Jay A. Gupta

Abstract: Magnetic multilayers are a promising platform for storage and logic devices based on skyrmion spin textures, due to the large materials phase space for tuning properties. Epitaxial superlattice structures of [Pt/Co/Cu]n thin films were grown by molecular beam epitaxy at room temperature. Spin-polarized scanning tunneling microscopy (SP-STM) of these samples was used to probe the connection between… ▽ More Magnetic multilayers are a promising platform for storage and logic devices based on skyrmion spin textures, due to the large materials phase space for tuning properties. Epitaxial superlattice structures of [Pt/Co/Cu]n thin films were grown by molecular beam epitaxy at room temperature. Spin-polarized scanning tunneling microscopy (SP-STM) of these samples was used to probe the connection between surface structure and skyrmion morphology with nanoscale spatial resolution. Irregular-shaped skyrmion bubbles were observed, with effective diameters from 20-200 nm that are much larger than the nanoscale grain structure of the surface topography. Nucleation, annihilation, and motion of skyrmion bubbles could be driven using the stray field of the ferromagnetic tip in repeated imaging, and spin-polarized current/voltage pulses. Our detailed comparison of STM topography and differential conductance images shows that there are no surface defects or inhomogeneities at length scales that could account for the range in skyrmion bubble size or shape observed in the measurements. △ Less

Submitted 1 June, 2023; v1 submitted 17 March, 2023; originally announced March 2023.

Comments: 11 pages, 5 figures

Spin polarized STM imaging of nanoscale Néel skyrmions in an SrIrO3/SrRuO3 Perovskite Bilayer

Authors: J. P. Corbett, K. -Y. Meng, J. J. Repicky, J. Rowland, A. S. Ahmed, J. Guerrero-Sanchez, F. Y. Yang, J. A. Gupta

Abstract: Spin-polarized scanning tunneling microscopy (SPSTM) was used to directly image nanoscale Néel skyrmions in a SrIrO3 / SrRuO3 bilayer system that are among the smallest reported to date in any system. Off-axis magnetron sputtering was used to cap epitaxial films of the oxide ferromagnet SRO with 2 unit cells of SrIrO3, intended to provide interfacial spin orbit coupling. Atomic resolution STM imag… ▽ More Spin-polarized scanning tunneling microscopy (SPSTM) was used to directly image nanoscale Néel skyrmions in a SrIrO3 / SrRuO3 bilayer system that are among the smallest reported to date in any system. Off-axis magnetron sputtering was used to cap epitaxial films of the oxide ferromagnet SRO with 2 unit cells of SrIrO3, intended to provide interfacial spin orbit coupling. Atomic resolution STM imaging and tunneling spectroscopy were used to identify island-like SrIrO3 grains and small regions of bare SrRuO3. Isolated skyrmions were only observed in SrIrO3-covered regions of the film, and exhibited a distribution of sizes and shapes with an average diameter of 3 nm. We found that skyrmions must be fully contained within, but may be smaller than, any given SrIrO3 region. Additionally, skyrmions were observed on SrIrO3 islands of varying thickness without loss of SPSTM contrast, suggesting the magnetic texture lies within the SrIrO3 island rather than the underlying ferromagnetic SrRuO3. Density functional theory calculations suggest this could be due to a small induced magnetic moment associated with IrO layers in the SrIrO3 film. △ Less

Submitted 12 July, 2020; originally announced July 2020.

Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators

Authors: Brenton A. Noesges, Tiancong Zhu, Jacob J. Repicky, Sisheng Yu, Fenguan Yang, Jay A. Gupta, Roland K. Kawakami, Leonard J. Brillson

Abstract: Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic chang… ▽ More Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic changes at the interface. Depositing Mn metal on Bi$_2$Se$_3$ without an external source of Se shows unexpected bonding within the Mn layer due to Mn-Se bonding as Se diffuses out of the Bi$_2$Se$_3$ layer into the growing Mn film. The Se out-diffusion is further evidenced by changes in Bi core levels within the Bi$_2$Se$_3$ layers indicating primarily Bi-Bi bonding over Bi-Se bonding. No out-diffusion of Se occurred when excess Se is supplied with Mn, indicating the importance of supplying enough chalcogen atoms with deposited metals. However, Bi$_2$Se$_3$ core level photoelectrons exhibited a rigid chemical shift toward higher binding energy after depositing a monolayer of MnSe$_{2-x}$, indicating a dipole within the overlayer. Stoichiometry calculations indicated that the monolayer forms MnSe preferentially over the transition metal dichalcogenide (TMD) phase MnSe$_2$, providing a consistent picture of the dipole formation in which a plane of Se anions sits above Mn cations. This study shows that chemical diffusion and dipole formation are important for Mn-Bi$_2$Se$_3$ and MnSe$_{2-x}$-Bi$_2$Se$_3$ and should be considered carefully for TMD/TI interfaces more generally. △ Less

Submitted 12 April, 2020; originally announced April 2020.

Comments: 12 pages, 6 figures + 1 supplemental figure

Journal ref: Phys. Rev. Materials 4, 054001 (2020)

Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy

Authors: Tiancong Zhu, Dante J. O'Hara, Brenton A. Noesges, Menglin Zhu, Jacob J. Repicky, Mark R. Brenner, Leonard J. Brillson, **woo Hwang, Jay A. Gupta, Roland K. Kawakami

Abstract: We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectrosc… ▽ More We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective cap** layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices. △ Less

Submitted 11 April, 2020; originally announced April 2020.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. Materials 4, 084002 (2020)

Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$

Authors: Tiancong Zhu, Alexander J. Bishop, Tong Zhou, Menglin Zhu, Dante J. O'Hara, Alexander A. Baker, Shuyu Cheng, Robert C. Walko, Jacob J. Repicky, Jay A. Gupta, Chris M. Jozwiak, Eli Rotenberg, **woo Hwang, Igor Žutić, Roland K. Kawakami

Abstract: The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of… ▽ More The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators. △ Less

Submitted 17 March, 2020; originally announced March 2020.

Comments: 20 pages, 9 figures

Tunable tunnel barriers in a semiconductor via ionization of individual atoms

Authors: Sara M. Mueller, Dongjoon Kim, Stephen R. McMillan, Steven J. Tjung, Jacob J. Repicky, Stephen Gant, Evan Lang, Fedor Bergmann, Kevin Werner, Enam Chowdhury, Aravind Asthagiri, Michael E. Flatte, Jay A. Gupta

Abstract: We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We att… ▽ More We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices. △ Less

Submitted 15 June, 2020; v1 submitted 9 September, 2019; originally announced September 2019.

Comments: 15 pages, 6 figures

Surface Structures of Epitaxial B20 FeGe(-1-1-1) Thin Films via Scanning Tunneling Microscopy

Authors: J. P. Corbett, T. Zhu, A. S. Ahmed, S. J. Tjung, J. J. Repicky, T. Takeuchi, R. K. Kawakami, J. A. Gupta

Abstract: We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffra… ▽ More We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction resulting in a size of ~6.84 Å in agreement with the bulk expectation. Furthermore, the atomic resolution and registry across triple-layer step edges definitively determine the grain orientation as (111) or (-1-1-1). Further verification of the grain orientation is made by Ar+ sputtering FeGe(-1-1-1) surface allowing direct imaging of the subsurface layer. △ Less

Submitted 2 July, 2018; originally announced July 2018.

Comments: 19 pages, 7 figures

STM and DFT studies of CO2 adsorption on Cu(100)-O surface

Authors: Steven J. Tjung, Qiang Zhang, Jacob J. Repicky, Simuck F. Yuk, Xiaowa Nie, Nancy M. Santagata, Aravind Asthagiri, Jay A. Gupta

Abstract: We characterized CO2 adsorption and diffusion on the missing row reconstructed Cu(100)-O surface using a combination of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations with dispersion. We deposited CO2 molecules in situ at 5K, which allowed us to unambiguously identify individual CO2 molecules and their adsorption sites. Based on a comparison of experimental an… ▽ More We characterized CO2 adsorption and diffusion on the missing row reconstructed Cu(100)-O surface using a combination of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations with dispersion. We deposited CO2 molecules in situ at 5K, which allowed us to unambiguously identify individual CO2 molecules and their adsorption sites. Based on a comparison of experimental and DFT-generated STM images, we find that the CO2 molecules sit in between the O atoms in the missing row reconstructed Cu(100)-O surface. The CO2 molecules are easily perturbed by the STM tip under typical imaging conditions, suggesting that the molecules are weakly bound to the surface. The calculated adsorption energy, vibrational modes, and diffusion barriers of the CO2 molecules also indicate weak adsorption, in qualitative agreement with the experiments. A comparison of tunneling spectroscopy and DFT-calculated density of states shows that the primary change near the Fermi level is associated with changes to the surface states with negligible contribution from the CO2 molecular states. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Journal ref: Surface Science, 679, 50-55 (2019)