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Charge Transport and Defects in Sulfur-Deficient Chalcogenide Perovskite BaZrS$_3$
Authors:
Garima Aggarwal,
Adeem Saeed Mirza,
Stefania Riva,
Corrado Comparotto,
Robert J. W. Frost,
Soham Mukherjee,
Monica Morales-Masis,
Håkan Rensmo,
Jonathan Staaf Scragg
Abstract:
Exploring the conduction mechanism in the chalcogenide perovskite BaZrS$_3$ is of significant interest due to its potential suitability as a top absorber layer in silicon-based tandem solar cells and other optoelectronic applications. Theoretical and experimental studies anticipate native ambipolar do** in BaZrS$_3$, although experimental validation remains limited. This study reveals a transiti…
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Exploring the conduction mechanism in the chalcogenide perovskite BaZrS$_3$ is of significant interest due to its potential suitability as a top absorber layer in silicon-based tandem solar cells and other optoelectronic applications. Theoretical and experimental studies anticipate native ambipolar do** in BaZrS$_3$, although experimental validation remains limited. This study reveals a transition from highly insulating behavior to n-type conductivity in BaZrS$_3$ through annealing in an S-poor environment. BaZrS$_3$ thin films are synthesized $\textit{via}$ a two step process: co-sputtering of Ba-Zr followed by sulfurization at 600 $^{\circ}$C, and subsequent annealing in high vacuum. UV-Vis measurement reveal a red-shift in the absorption edge concurrent with sample color darkening after annealing. The increase in defect density with vacuum annealing, coupled with low activation energy and n-type character of defects, strongly suggests that sulfur vacancies (V$_{\mathrm{S}}$) are responsible, in agreement with theoretical predictions. The shift of the Fermi level towards conduction band minimum, quantified by Hard X-ray Photoelectron Spectroscopy (Ga K$α$, 9.25 keV), further corroborates the induced n-type of conductivity in annealed samples. Our findings indicate that vacuum annealing induces V$_{\mathrm{S}}$ defects that dominate the charge transport, thereby making BaZrS$_3$ an n-type semiconductor under S-poor conditions. This study offers crucial insights into understanding the defect properties of BaZrS$_3$, facilitating further improvements for its use in solar cell applications.
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Submitted 27 May, 2024;
originally announced May 2024.
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Experimentally observed defect tolerance in the electronic structure of lead bromide perovskites
Authors:
Gabriel J. Man,
Aleksandr Kalinko,
Dibya Phuyal,
Pabitra K. Nayak,
Håkan Rensmo,
Sergei M. Butorin
Abstract:
Point defect tolerance in materials, which extends operational lifetime, is essential for societal sustainability, and the creation of a framework to design such properties is a grand challenge in the material sciences. Using three prototypical lead bromide perovskites in single crystal form and high-resolution synchrotron-based X-ray spectroscopy, we reveal the unexpectedly pivotal role of the A-…
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Point defect tolerance in materials, which extends operational lifetime, is essential for societal sustainability, and the creation of a framework to design such properties is a grand challenge in the material sciences. Using three prototypical lead bromide perovskites in single crystal form and high-resolution synchrotron-based X-ray spectroscopy, we reveal the unexpectedly pivotal role of the A-cation in mediating the influence of photoinduced defects. Organic A-cation hydrogen bonding facilitates chemical flexing of the lead-bromide bond that mitigates the self-do** effect of bromide vacancies. The contribution of partially ionic lead-bromide bonding to the electronic band edges, where the bonding becomes more ionic upon the formation of defects, mitigates re-hybridization of the electronic structure upon degradation. These findings reveal two new general design principles for defect tolerance in materials. Our findings uncover the foundations of defect tolerance in halide perovskites and have implications for defect calculations, all beam-based measurements of photophysical properties and perovskite solar cell technology.
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Submitted 6 May, 2023;
originally announced May 2023.
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Intra-Atomic and Local Exchange Fields in the Van der Waals Magnet CrI3
Authors:
Anirudha Ghosh,
H. Johan M. Jonsson,
D. J. Mukkattukavil,
Y. Kvashnin,
D. Phuyal,
M. Agaker,
Alessandro Nicolaou,
M. Jonak,
R. Klingeler,
M. V. Kamalakar,
Hakan Rensmo,
Tapati Sarkar,
Alexander N. Vasiliev,
Sergei Butorin,
J. -E. Rubensson,
Olle Eriksson,
Mahmoud Abdel-Hafiez
Abstract:
We report on a combined experimental and theoretical study on CrI3 single crystals by employing the polarization dependence of resonant inelastic X-ray scattering (RIXS). Our investigations reveal multiple Cr 3d orbital splitting (dd excitations) as well as magnetic dichroism (MD) in the RIXS spectra which is evidence of spin-flip in the dd excitation. Interestingly, the dd excitation energies are…
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We report on a combined experimental and theoretical study on CrI3 single crystals by employing the polarization dependence of resonant inelastic X-ray scattering (RIXS). Our investigations reveal multiple Cr 3d orbital splitting (dd excitations) as well as magnetic dichroism (MD) in the RIXS spectra which is evidence of spin-flip in the dd excitation. Interestingly, the dd excitation energies are similar on both sides of the ferromagnetic transition temperature, TC of 61 K, although MD in RIXS is predominant at 0.4 tesla magnetic field below TC. This demonstrates that the ferromagnetic superexchange interaction that is responsible for the intra-atomic exchange field, is vanishingly small compared to local exchange field that comes from exchange and correlation interaction among the interacting Cr 3d orbitals. The investigation presented here demonstrate that the electronic structure of bulk CrI3 is complex in the sense that dynamical electron correlations are significant. The recorded RIXS spectra reported here reveal clearly resolved Cr 3d intra-orbital dd excitations that represent transitions between electronic levels that are heavily influenced by multi-configuration effects. Our calculations employing the crystal field TTmultiplet theory taking into account the Cr 3d hybridization with the ligand valence states and the full multiplet structure due to intra-atomic and crystal field interactions in Oh and D3d symmetry, clearly reproduced the dichroic trend in experimental RIXS spectra.
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Submitted 12 January, 2022;
originally announced January 2022.
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Growth of Transition Metal Sulfides by Sulfuric Vapor Transport and Liquid Sulfur: Synthesis and Properties
Authors:
D. A. Chareev,
D. Phyual,
D. Karmakar,
A. Nekrasov,
F. O. L. Johansson,
T. Sarkar,
H. Rensmo,
Olle Eriksson,
Anna Delin,
A. N. Vasiliev,
Mahmoud Abdel-Hafiez
Abstract:
Transition metals dichalcogenides (TMDs) are an emergent class of low-dimensional materials with growing applications in the field of nanoelectronics. However, efficient methods for synthesizing large mono-crystals of these systems are still lacking. Here, we describe an efficient synthetic route for a large number of TMDs that were obtained in quartz ampoules by sulfuric vapor transport and liqui…
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Transition metals dichalcogenides (TMDs) are an emergent class of low-dimensional materials with growing applications in the field of nanoelectronics. However, efficient methods for synthesizing large mono-crystals of these systems are still lacking. Here, we describe an efficient synthetic route for a large number of TMDs that were obtained in quartz ampoules by sulfuric vapor transport and liquid sulfur. Crystals of metal sulfides MgS, PdS, PtS2, ReS2, NbS2, TaS2, TaS3, MoS2, WS2, FeS2, CoS2, NiS2, Cr2S3, VS2, In2S3, Bi2S3, TiS2, ZrS3, HfS3, and pure Au were obtained in quartz ampoules by chemical vapor transport technique with sulfur vapors as the transport agent. Unlike the sublimation technique, the metal enters the gas phase in the form of molecules, hence containing greater amount of sulfur than the growing crystal. We have investigated the physical properties for a selection of these crystals and compared them to state-of-the-art findings reported in the literature. The acquired x-ray photoemission spectroscopy features demonstrate the overall high quality of single crystals grown in this work as exemplified by ReS2 and CoS2. This new approach to synthesize high-quality transition metal dichalcogenides single crystals can alleviate many material quality concerns and is suitable for emerging electronic devices.
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Submitted 31 December, 2021;
originally announced December 2021.
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A-site Cation Influence on the Conduction Band of Lead Bromide Perovskites
Authors:
Gabriel J. Man,
Chinnathambi Kamal,
Aleksandr Kalinko,
Dibya Phuyal,
Joydev Acharya,
Soham Mukherjee,
Pabitra K. Nayak,
Håkan Rensmo,
Michael Odelius,
Sergei M. Butorin
Abstract:
Hot carrier solar cells hold promise for exceeding the Shockley-Queisser limit. Slow hot carrier cooling is one of the most intriguing properties of lead halide perovskites and distinguishes this class of materials from competing materials used in solar cells. Here we use the element selectivity of high-resolution X-ray spectroscopy to uncover a previously hidden feature in the conduction band sta…
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Hot carrier solar cells hold promise for exceeding the Shockley-Queisser limit. Slow hot carrier cooling is one of the most intriguing properties of lead halide perovskites and distinguishes this class of materials from competing materials used in solar cells. Here we use the element selectivity of high-resolution X-ray spectroscopy to uncover a previously hidden feature in the conduction band states, the σ-π energy separation, and find that it is strongly influenced by the strength of electronic coupling between the A-cation and bromide-lead sublattice. Our finding provides an alternative mechanism to the commonly discussed polaronic screening and hot phonon bottleneck carrier cooling mechanisms. Our work emphasizes the optoelectronic role of the A-cation, provides a comprehensive view of A-cation effects in the electronic and crystal structures, and outlines a broadly applicable spectroscopic approach for assessing the impact of chemical alterations of the A-cation on halide and potentially non-halide perovskite electronic structure.
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Submitted 17 September, 2021;
originally announced September 2021.
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Electronic Coupling between the Unoccupied States of the Organic and Inorganic Sub-Lattices of Methylammonium Lead Iodide a Hybrid Organic-Inorganic Perovskite Single Crystal
Authors:
Gabriel J. Man,
Cody M. Sterling,
Chinnathambi Kamal,
Konstantin A. Simonov,
Sebastian Svanström,
Joydev Acharya,
Fredrik O. L. Johansson,
Erika Giangrisostomi,
Ruslan Ovsyannikov,
Thomas Huthwelker,
Sergei M. Butorin,
Pabitra K. Nayak,
Michael Odelius,
Håkan Rensmo
Abstract:
Organic-inorganic halide perovskites have been intensively re-investigated due to their applications, yet the opto-electronic function of the organic cation remains unclear. Through organic-selective resonant Auger electron spectroscopy measurements on well-defined single crystal surfaces, we find evidence for electronic coupling in the unoccupied states between the organic and inorganic sub-latti…
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Organic-inorganic halide perovskites have been intensively re-investigated due to their applications, yet the opto-electronic function of the organic cation remains unclear. Through organic-selective resonant Auger electron spectroscopy measurements on well-defined single crystal surfaces, we find evidence for electronic coupling in the unoccupied states between the organic and inorganic sub-lattices of the prototypical hybrid perovskite, which is contrary to the notion based on previous studies that the organic cation is electronically inert. The coupling is relevant for electron dynamics in the material and for understanding opto-electronic functionality.
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Submitted 18 May, 2021; v1 submitted 3 November, 2020;
originally announced November 2020.
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Growth of Transition Metal Dichalcogenides by Solvent Evaporation Technique
Authors:
Dmitriy A. Chareev,
Polina V. Evstigneeva,
Dibya Phuyal,
Gabriel Man,
Hakan Rensmo,
Alexander N. Vasiliev,
Mahmoud Abdel-Hafiez
Abstract:
Due to their physical properties and potential applications in energy conversion and storage, transition metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Amongst this class of materials, TMDs based on molybdenum, tungsten, sulfur and selenium are particularly attractive due to their semiconducting properties and the availability of bottom-up synthesis techniques. He…
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Due to their physical properties and potential applications in energy conversion and storage, transition metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Amongst this class of materials, TMDs based on molybdenum, tungsten, sulfur and selenium are particularly attractive due to their semiconducting properties and the availability of bottom-up synthesis techniques. Here we report a method which yields high quality crystals of transition metal diselenide and ditelluride compounds (PtTe2, PdTe2, NiTe2, TaTe2, TiTe2, RuTe2, PtSe2, PdSe2, NbSe2, TiSe2, VSe2, ReSe2) from their solid solutions, via vapor deposition from a metal-saturated chalcogen melt. Additionally, we show the synthesis of rare-earth metal poly-chalcogenides and NbS2 crystals using the aforementioned process. Most of the obtained crystals have a layered CdI2 structure. We have investigated the physical properties of selected crystals and compared them to state-of-the-art findings reported in the literature. Remarkably, the charge density wave transition in 1T-TiSe2 and 2H-NbSe2 crystals is well-defined at TCDW ~ 200 K and ~ 33 K, respectively. Angle-resolved photoelectron spectroscopy and electron diffraction are used to directly access the electronic and crystal structures of PtTe2 single crystals, and yield state-of-the-art measurements.
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Submitted 14 August, 2020; v1 submitted 28 July, 2020;
originally announced July 2020.
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Do** induced site-selective Mott insulating phase in LaFeO$_3$
Authors:
S. Jana,
S. K. Panda,
D. Phuyal,
B. Pal,
S. Mukherjee,
A. Dutta,
P. Anil Kumar,
D. Hedlund,
J. Schott,
P. Thunstrom,
Y. Kvashnin,
H. Rensmo,
M. Venkata Kamalakar,
Carlo. U. Segre,
P. Svedlindh,
K. Gunnarsson,
S. Biermann,
O. Eriksson,
O. Karis,
D. D. Sarma
Abstract:
Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature superconducting phases. In manganites, do** results in exotic physics such as insulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital- or charge…
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Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature superconducting phases. In manganites, do** results in exotic physics such as insulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital- or charge-ordered (CO) or charge-disproportionate (CD) states. In most oxides, antiferromagnetic order and charge-disproportionation are asssociated with insulating behavior. Here we report the realization of a unique physical state that can be induced by Mo do** in LaFeO$_3$: the resulting metallic state is a site-selective Mott insulator where itinerant electrons evolving in low-energy Mo states coexist with localized carriers on the Fe sites. In addition, a local breathing-type lattice distortion induces charge disproportionation on the latter, without destroying the antiferromagnetic order. A state, combining antiferromangetism, metallicity and CD phenomena is rather rare in oxides and may be of utmost significance for future antiferromagnetic memory devices.
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Submitted 25 October, 2018;
originally announced October 2018.
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Maximising and Stabilising Luminescence in Metal Halide Perovskite Device Structures
Authors:
Mojtaba Abdi-Jalebi,
Zahra Andaji-Garmaroudi,
Stefania Cacovich,
Camille Stavrakas,
Bertrand Philippe,
Johannes M. Richter,
Mejd Alsari,
Edward P. Booker,
Eline M. Hutter,
Andrew J. Pearson,
Samuele Lilliu,
Tom J Savenije,
Håkan Rensmo,
Giorgio Divitini,
Caterina Ducati,
Richard H. Friend,
Samuel D. Stranks
Abstract:
Metal halide perovskites are attracting tremendous interest for a variety of optoelectronic applications. The ability to tune the perovskite bandgap by tweaking the chemical compositions opens up new applications as coloured emitters and as components of tandem photovoltaics. Nevertheless, non-radiative losses are still limiting performance, with luminescence yields in state-of-the-art perovskite…
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Metal halide perovskites are attracting tremendous interest for a variety of optoelectronic applications. The ability to tune the perovskite bandgap by tweaking the chemical compositions opens up new applications as coloured emitters and as components of tandem photovoltaics. Nevertheless, non-radiative losses are still limiting performance, with luminescence yields in state-of-the-art perovskite solar cells still far from 100% under solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability (bandgaps ~1.7-1.9 eV), photo-induced ion segregation leads to bandgap instabilities. Here, we substantially mitigate both non-radiative losses and photo-induced ion migration in perovskite structures by decorating the surfaces and grain boundaries with passivating potassium-halide interlayers. We demonstrate external photo-luminescence quantum yields of 66%, translating to internal yields exceeding 95%. The high luminescence yields are achieved while maintaining high mobilities over 40 cm2V-1s-1, giving the elusive combination of both high luminescence and excellent charge transport. We find that the external luminescence yield when interfaced with electrodes in a solar cell device stack, a quantity that must be maximized to approach the efficiency limits, remains as high as 15%, indicating very clean interfaces. We also demonstrate the inhibition of photo-induced ion migration processes across a wide range of mixed halide perovskite bandgaps that otherwise show bandgap instabilities. We validate these results in full operating solar cells, highlighting the importance of stabilising luminescence in device structures. Our work represents a critical breakthrough in the construction of tunable halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells and coloured LEDs.
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Submitted 13 December, 2017;
originally announced December 2017.
