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A singlet-triplet hole-spin qubit in MOS silicon
Authors:
S. D. Liles,
D. J. Halverson,
Z. Wang,
A. Shamim,
R. S. Eggli,
I. K. **,
J. Hillier,
K. Kumar,
I. Vorreiter,
M. Rendell,
J. H. Huang,
C. C. Escott,
F. E. Hudson,
W. H. Lim,
D. Culcer,
A. S. Dzurak,
A. R. Hamilton
Abstract:
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with sing…
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Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 us using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits.
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Submitted 14 October, 2023;
originally announced October 2023.
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Probing Fermi surface parity with spin resolved transverse magnetic focussing
Authors:
M. J. Rendell,
S. D. Liles,
S. Bladwell,
A. Srinivasan,
O. Klochan,
I. Farrer,
D. A. Ritchie,
O. P. Sushkov,
A. R. Hamilton
Abstract:
Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k…
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Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k $\neq$ -k). Here, we show that transverse magnetic focussing can be used to detect such changes, because focussing only measures a well defined section of the Fermi surface and does not average over +k and -k. Furthermore, our results show that focussing is an order of magnitude more sensitive to changes in the Fermi surface than other 2D techniques, and could be used to investigate similar Fermi surface changes in other 2D systems.
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Submitted 7 March, 2024; v1 submitted 6 October, 2023;
originally announced October 2023.
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Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
Authors:
Abhikbrata Sarkar,
Zhanning Wang,
Mathew Rendell,
Nico W. Hendrickx,
Menno Veldhorst,
Giordano Scappucci,
Mohammad Khalifa,
Joe Salfi,
Andre Saraiva,
A. S. Dzurak,
A. R. Hamilton,
Dimitrie Culcer
Abstract:
In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental measurements of the angular dependence of electrically driven spin resonance. We focus the theoretical analysis on electrical spin operation, phonon-induced relaxa…
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In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental measurements of the angular dependence of electrically driven spin resonance. We focus the theoretical analysis on electrical spin operation, phonon-induced relaxation, and the existence of coherence sweet spots. We find that the choice of magnetic field orientation makes a substantial difference for the properties of hole spin qubits. Furthermore, although the Schrieffer-Wolff approximation can describe electron dipole spin resonance (EDSR), it does not capture the fundamental spin dynamics underlying qubit coherence. Specifically, we find that: (i) EDSR for in-plane magnetic fields varies non-linearly with the field strength and weaker than for perpendicular magnetic fields; (ii) The EDSR Rabi frequency is maximized when the a.c. electric field is aligned parallel to the magnetic field, and vanishes when the two are perpendicular; (iii) The Rabi ratio $T_1/T_π$, i.e. the number of EDSR gate operation per unit relaxation time, is expected to be as large as $5{\times}10^5$ at the magnetic fields used experimentally; (iv) The orbital magnetic field terms make the in-plane $g$-factor strongly anisotropic in a squeezed dot, in excellent agreement with experimental measurements; (v) The coherence sweet spots do not exist in an in-plane magnetic field, as the orbital magnetic field terms expose the qubit to all components of the defect electric field. These findings will provide a guideline for experiments to design ultrafast, highly coherent hole spin qubits in Ge.
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Submitted 3 July, 2023;
originally announced July 2023.
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Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
Authors:
Ik Kyeong **,
Krittika Kumar,
Matthew J. Rendell,
Jonathan Y. Huang,
Chris C. Escott,
Fay E. Hudson,
Wee Han Lim,
Andrew S. Dzurak,
Alexander R. Hamilton,
Scott D. Liles
Abstract:
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address…
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Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance (EDSR). We achieve smooth control of the inter-dot coupling rate over two orders of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet-triplet relaxation time of 11 μs for a known hole occupation. These results provide a path towards improving the quality and controllability of hole spin-qubits.
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Submitted 31 October, 2022;
originally announced November 2022.
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Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing
Authors:
M. J. Rendell,
S. D. Liles,
A. Srinivasan,
O. Klochan,
I. Farrer,
D. A. Ritchie,
A. R. Hamilton
Abstract:
In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally assoc…
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In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally associated with a change in the spin polarisation. We instead show that in hole systems with a $k^3$ spin-orbit interaction, this peak suppression is due to a change in the scattering of one spin state, not a change in spin polarisation. We also show that the change in scattering length extracted from magnetic focussing is consistent with results obtained from measurements of Shubnikov-de Haas oscillations. This result suggests that scattering must be considered when relating focussing peak amplitude to spin polarisation in hole systems
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Submitted 7 October, 2022;
originally announced October 2022.
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Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing
Authors:
M. J. Rendell,
S. D. Liles,
A. Srinivasan,
O. Klochan,
I. Farrer,
D. A. Ritchie,
A. R. Hamilton
Abstract:
Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term…
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Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term allows the spatial separation of spins to be changed in-situ using a voltage applied to an overall top gate. Here we demonstrate that this can be used to control the splitting of the magnetic focussing peaks. Additionally, we compare the focussing peak splitting to that predicted by Shubnikov-de Haas oscillations and k.p bandstructure calculations. We find that the focussing peak splitting is consistently larger than expected, suggesting further work is needed on understanding spin dependent magnetic focussing.
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Submitted 3 April, 2022;
originally announced April 2022.
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Lightly-strained germanium quantum wells with hole mobility exceeding one million
Authors:
M. Lodari,
O. Kong,
M. Rendell,
A. Tosato,
A. Sammak,
M. Veldhorst,
A. R. Hamilton,
G. Scappucci
Abstract:
We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$ cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low densit…
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We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$ cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density and low magnetic field. The low-disorder and small effective mass (0.068$m_e$) defines lightly-strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.
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Submitted 5 February, 2022; v1 submitted 22 December, 2021;
originally announced December 2021.
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Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
Authors:
S. D. Liles,
F. Martins,
D. S. Miserev,
A. A. Kiselev,
I. D. Thorvaldson,
M. J. Rendell,
I. K. **,
F. E. Hudson,
M. Veldhorst,
K. M. Itoh,
O. P. Sushkov,
T. D. Ladd,
A. S. Dzurak,
A. R. Hamilton
Abstract:
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We sh…
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Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We show that non-uniform electrode-induced strain produces nanometre-scale variations in the HH-LH splitting. Importantly, we find that this \RR{non-uniform strain causes} the HH-LH splitting to vary by up to 50\% across the active region of the quantum dot. We show that local electric fields can be used to displace the hole relative to the non-uniform strain profile, allowing a new mechanism for electric modulation of the hole g-tensor. Using this mechanism we demonstrate tuning of the hole $g$-factor by up to 500\%. In addition, we observe a \RR{potential} sweet spot where d$g_{(1\overline{1}0)}$/d$V$ = 0, offering a configuration to suppress spin decoherence caused by electrical noise. These results open a path towards a previously unexplored technology: engineering of \RR{non-uniform} strains to optimise spin-based devices.
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Submitted 20 December, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
