Showing 1–7 of 7 results for author: Rench, D W

Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films

Authors: Joon Sue Lee, Anthony Richardella, David W. Rench, Robert D. Fraleigh, Thomas C. Flanagan, Julie A. Borchers, **g Tao, Nitin Samarth

Abstract: We describe a detailed study of the structural, magnetic, and magneto-transport properties of single-crystal, n-type, Mn-doped Bi2Te3 thin films grown by molecular beam epitaxy. With increasing Mn concentration, the crystal structure changes from the tetradymite structure of the Bi2Te3 parent crystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m(Bi2)n homologous series. Magnetizat… ▽ More We describe a detailed study of the structural, magnetic, and magneto-transport properties of single-crystal, n-type, Mn-doped Bi2Te3 thin films grown by molecular beam epitaxy. With increasing Mn concentration, the crystal structure changes from the tetradymite structure of the Bi2Te3 parent crystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m(Bi2)n homologous series. Magnetization measurements reveal the onset of ferromagnetism with a Curie temperature in the range 13.8 K - 17 K in films with 2 % - 10 % Mn concentration. Magnetization hysteresis loops reveal that the magnetic easy axis is along the c-axis of the crystal (perpendicular to the plane). Polarized neutron reflectivity measurements of a 68 nm-thick sample show that the magnetization is uniform through the film. The presence of ferromagnetism is also manifest in a strong anomalous Hall effect and a hysteretic magnetoresistance arising from domain wall scattering. Ordinary Hall effect measurements show that the carrier density is n-type, increases with Mn do**, and is high enough (> 2.8 x 10^{13} cm^{-2}) to place the chemical potential in the conduction band. Thus, the observed ferromagnetism is likely associated with both bulk and surface states. Surprisingly, the Curie temperature does not show any clear dependence on the carrier density but does increase with Mn concentration. Our results suggest that the ferromagnetism probed in these Mn-doped Bi2Te3 films is not mediated by carriers in the conduction band or in an impurity band. △ Less

Submitted 22 February, 2014; originally announced February 2014.

Journal ref: Phys. Rev. B 89, 174425 (2014)

Growth and Characterization of Hybrid Insulating Ferromagnet-Topological Insulator Heterostructure Devices

Authors: A. Kandala, A. Richardella, D. W. Rench, D. M. Zhang, T. C. Flanagan, N. Samarth

Abstract: We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enables direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer re… ▽ More We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enables direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface. △ Less

Submitted 16 September, 2013; v1 submitted 5 December, 2012; originally announced December 2012.

Comments: The title and content of this manuscript have been significantly revised taking into account newly acquired data

Journal ref: Appl. Phys. Lett. 103 , 202409 (2013)

Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator

Authors: Duming Zhang, Anthony Richardella, David W. Rench, Su-Yang Xu, Abhinav Kandala, Thomas C. Flanagan, Haim Beidenkopf, Andrew L. Yeats, Bob B. Buckley, Paul V. Klimov, David D. Awschalom, Ali Yazdani, Peter Schiffer, M. Zahid Hasan, Nitin Samarth

Abstract: The breaking of time-reversal symmetry by ferromagnetism is predicted to yield profound changes to the electronic surface states of a topological insulator. Here, we report on a concerted set of structural, magnetic, electrical and spectroscopic measurements of \MBS thin films wherein photoemission and x-ray magnetic circular dichroism studies have recently shown surface ferromagnetism in the temp… ▽ More The breaking of time-reversal symmetry by ferromagnetism is predicted to yield profound changes to the electronic surface states of a topological insulator. Here, we report on a concerted set of structural, magnetic, electrical and spectroscopic measurements of \MBS thin films wherein photoemission and x-ray magnetic circular dichroism studies have recently shown surface ferromagnetism in the temperature range 15 K $\leq T \leq 100$ K, accompanied by a suppressed density of surface states at the Dirac point. Secondary ion mass spectroscopy and scanning tunneling microscopy reveal an inhomogeneous distribution of Mn atoms, with a tendency to segregate towards the sample surface. Magnetometry and anisotropic magnetoresistance measurements are insensitive to the high temperature ferromagnetism seen in surface studies, revealing instead a low temperature ferromagnetic phase at $T \lesssim 5$ K. The absence of both a magneto-optical Kerr effect and anomalous Hall effect suggests that this low temperature ferromagnetism is unlikely to be a homogeneous bulk phase but likely originates in nanoscale near-surface regions of the bulk where magnetic atoms segregate during sample growth. Although the samples are not ideal, with both bulk and surface contributions to electron transport, we measure a magnetoconductance whose behavior is qualitatively consistent with predictions that the opening of a gap in the Dirac spectrum drives quantum corrections to the conductance in topological insulators from the symplectic to the orthogonal class. △ Less

Submitted 7 November, 2012; v1 submitted 13 June, 2012; originally announced June 2012.

Comments: To appear in Phys. Rev. B

Journal ref: Phys. Rev. B 86, 205127 (2012)

Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires

Authors: J. Liang, J. Wang, A. Paul, B. J. Cooley, D. W. Rench, N. S. Dellas, S. E. Mohney, R. Engel-Herbert, N. Samarth

Abstract: We report four probe measurements of the low field magnetoresistance in single core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously att… ▽ More We report four probe measurements of the low field magnetoresistance in single core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures. △ Less

Submitted 19 January, 2012; v1 submitted 15 January, 2012; originally announced January 2012.

Comments: Submitted to Applied Physics Letters; some typos corrected and a defective figure replaced

Journal ref: Appl. Phys. Lett. 100, 182402 (2012)

Structural and Magnetic Characteristics of MnAs Nanoclusters Embedded in Be-doped GaAs

Authors: D. W. Rench, P. Schiffer, N. Samarth

Abstract: We describe a systematic study of the synthesis, microstructure and magnetization of hybrid ferromagnet-semiconductor nanomaterials comprised of MnAs nanoclusters embedded in a p-doped GaAs matrix. These samples are created during the in situ annealing of Be-doped (Ga,Mn)As heterostructures grown by molecular beam epitaxy. Transmission electron microscopy and magnetometry studies reveal two distin… ▽ More We describe a systematic study of the synthesis, microstructure and magnetization of hybrid ferromagnet-semiconductor nanomaterials comprised of MnAs nanoclusters embedded in a p-doped GaAs matrix. These samples are created during the in situ annealing of Be-doped (Ga,Mn)As heterostructures grown by molecular beam epitaxy. Transmission electron microscopy and magnetometry studies reveal two distinct classes of nanoclustered samples whose structural and magnetic properties depend on the Mn content of the initial (Ga,Mn)As layer. For Mn content in the range 5% - 7.5%, annealing creates a superparamagnetic material with a uniform distribution of small clusters (diameter around 6 nm) and with a low blocking temperature (T_B approximately 10 K). While transmission electron microscopy cannot definitively identify the composition and crystalline phase of these small clusters, our experimental data suggest that they may be comprised of either zinc-blende MnAs or Mn-rich regions of (Ga,Mn)As. At higher Mn content (> 8 %), we find that annealing results in an inhomogeneous distribution of both small clusters as well as much larger NiAs-phase MnAs clusters (diameter around 25 nm). These samples also exhibit supermagnetism, albeit with substantially larger magnetic moments and coercive fields, and blocking temperatures well above room temperature. △ Less

Submitted 23 May, 2011; originally announced May 2011.

Journal ref: Phys. Rev. B 84, 094434 (2011)

Measurements of Nanoscale Domain Wall Flexing in a Ferromagnetic Thin Film

Authors: A. L. Balk, M. E. Nowakowski, M. J. Wilson, D. W. Rench, P. Schiffer, D. D. Awschalom, N. Samarth

Abstract: We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be around 10^14 cm^{-3}… ▽ More We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be around 10^14 cm^{-3}. Analysis of single site depinning events and their temperature dependence yields estimates of pinning site forces (10 pN range) as well as the thermal deactivation energy. Finally, our data hints at a much higher intrinsic domain wall mobility for flexing than previously observed in optically-probed micron scale measurements. △ Less

Submitted 27 March, 2011; originally announced March 2011.

Journal ref: Phys. Rev. Lett. 107, 077205 (2011)

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Authors: A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, N. Samarth

Abstract: We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundre… ▽ More We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures. △ Less

Submitted 8 December, 2010; originally announced December 2010.

Comments: To appear in Applied Physics Letters

Journal ref: Applied Physics Letters 97, 262104 (2010)