Showing 1–10 of 10 results for author: Remeika, M

Measurement of exciton correlations using electrostatic lattices

Authors: M. Remeika, J. R. Leonard, C. J. Dorow, M. M. Fogler, L. V. Butov, M. Hanson, A. C. Gossard

Abstract: We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical e… ▽ More We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical estimate of the exciton correlation parameter and temperature. We also present a proof-of-principle demonstration of the method for determining the correlation parameter and discuss how its accuracy can be improved. △ Less

Submitted 5 April, 2016; v1 submitted 18 August, 2015; originally announced August 2015.

Comments: 10 pages, 11 figures

Journal ref: Phys. Rev. B 92, 115311 (2015)

Optically Controlled Excitonic Transistor

Authors: P. Andreakou, S. V. Poltavtsev, J. R. Leonard, E. V. Calman, M. Remeika, Y. Y. Kuznetsova, L. V. Butov, J. Wilkes, M. Hanson, A. C. Gossard

Abstract: Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical exciton… ▽ More Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers. △ Less

Submitted 29 October, 2013; originally announced October 2013.

Journal ref: Applied Physics Letters 104, 091101 (2014)

Pattern Formation in the Exciton Inner Ring

Authors: M. Remeika, A. T. Hammack, S. Poltavtsev, L. V. Butov, J. Wilkes, A. L. Ivanov, K. L. Campman, M. Hanson, A. C. Gossard

Abstract: We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the in… ▽ More We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the inner ring region. These features are found to originate from a weak spatial modulation of the excitation beam intensity in the inner ring region. The modulation of exciton emission intensity anti-correlates with the modulation of the laser excitation intensity. The three phenomena - inner ring fragmentation, formation of multiple rings in the inner ring region, and emission suppression by a weak probe laser beam - have a common feature: a reduction of exciton emission intensity in the region of enhanced laser excitation. This effect is explained in terms of exciton transport and thermalization. △ Less

Submitted 18 April, 2013; originally announced April 2013.

Comments: 9 pages, 12 figures

Journal ref: Phys. Rev. B 88, 125307 (2013)

Transport of Indirect Excitons in a Potential Energy Gradient

Authors: J. R. Leonard, M. Remeika, M. K. Chu, Y. Y. Kuznetsova, A. A. High, L. V. Butov, J. Wilkes, M. Hanson, A. C. Gossard

Abstract: We realized a potential energy gradient - a ramp - for indirect excitons using a shaped electrode at constant voltage. We studied transport of indirect excitons along the ramp and observed that the exciton transport distance increases with increasing density and temperature. We realized a potential energy gradient - a ramp - for indirect excitons using a shaped electrode at constant voltage. We studied transport of indirect excitons along the ramp and observed that the exciton transport distance increases with increasing density and temperature. △ Less

Submitted 31 May, 2012; v1 submitted 28 March, 2012; originally announced March 2012.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 100, 231106 (2012)

Spontaneous coherence of indirect excitons in a trap

Authors: Alexander A. High, Jason R. Leonard, Mikas Remeika, Leonid V. Butov, Micah Hanson, Arthur C. Gossard

Abstract: We report on the emergence of spontaneous coherence in a gas of indirect excitons in an electrostatic trap. At low temperatures, the exciton coherence length becomes much larger than the thermal de Broglie wavelength and reaches the size of the exciton cloud in the trap. We report on the emergence of spontaneous coherence in a gas of indirect excitons in an electrostatic trap. At low temperatures, the exciton coherence length becomes much larger than the thermal de Broglie wavelength and reaches the size of the exciton cloud in the trap. △ Less

Submitted 7 October, 2011; v1 submitted 6 October, 2011; originally announced October 2011.

Comments: 4 pages, 4 figures

Journal ref: Nano Letters 12, 2605--2609 (2012)

Two-Dimensional Electrostatic Lattices for Indirect Excitons

Authors: Mikas Remeika, Michael M. Fogler, Leonid V. Butov, Micah Hanson, Arthur C. Gossard

Abstract: We report on a method for the realization of two-dimensional electrostatic lattices for excitons using patterned interdigitated electrodes. Lattice structure is set by the electrode pattern and depth of the lattice potential is controlled by applied voltages. We demonstrate square, hexagonal, and honeycomb lattices created by this method. We report on a method for the realization of two-dimensional electrostatic lattices for excitons using patterned interdigitated electrodes. Lattice structure is set by the electrode pattern and depth of the lattice potential is controlled by applied voltages. We demonstrate square, hexagonal, and honeycomb lattices created by this method. △ Less

Submitted 29 September, 2011; originally announced September 2011.

Comments: 4 pages, 3 figures. Main text and supplementary information

Journal ref: Appl. Phys. Lett. 100, 061103 (2012)

Electrostatic Conveyer for Excitons

Authors: A. G. Winbow, J. R. Leonard, M. Remeika, Y. Y. Kuznetsova, A. A. High, A. T. Hammack, L. V. Butov, J. Wilkes, A. A. Guenther, A. L. Ivanov, M. Hanson, A. C. Gossard

Abstract: We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition… ▽ More We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition for excitons in the conveyers and measured its dependence on the exciton density and conveyer amplitude and velocity. We considered a model for exciton transport via conveyers. The theoretical simulations are in agreement with the experimental data. △ Less

Submitted 25 February, 2011; originally announced February 2011.

Comments: 4 pages, 4 figures + supplemental material including two videos

Journal ref: Phys. Rev. Lett. 106, 196806 (2011)

Collection of indirect excitons in a diamond-shaped electrostatic trap

Authors: A. A. High, A. K. Thomas, G. Grosso, M. Remeika, A. T. Hammack, A. D. Meyertholen, M. M. Fogler, L. V. Butov, M. Hanson, A. C. Gossard

Abstract: We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening o… ▽ More We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening of disorder in the trap by the excitons. As a result, the diamond trap behaves as a smooth parabolic potential which realizes a cold and dense exciton gas at the trap center. △ Less

Submitted 3 June, 2009; originally announced June 2009.

Comments: 4 Pages, 5 figures

Journal ref: Phys. Rev. Lett. 103, 087403 (2009)

Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices

Authors: M. Remeika, J. C. Graves, A. T. Hammack, A. D. Meyertholen, M. M. Fogler, L. V. Butov, M. Hanson, A. C. Gossard

Abstract: We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results a… ▽ More We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction. △ Less

Submitted 9 January, 2009; originally announced January 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 102, 186803 (2009)

The effect of morphology on the superconductor-insulator transition in 1-D nanowires

Authors: A. T. Bollinger, A. Rogachev, M. Remeika, A. Bezryadin

Abstract: We study the effect of morphology on the low temperature behavior of superconducting nanowires of length $\approx$100 nm. A well-defined superconductor-insulator transition (SIT) is observed only in homogenous wires, in which case the transition occurs when the normal resistance is close to $h/4e^2$. Inhomogeneous wires, on the other hand, exhibit a mixed behavior, such that signatures of the su… ▽ More We study the effect of morphology on the low temperature behavior of superconducting nanowires of length $\approx$100 nm. A well-defined superconductor-insulator transition (SIT) is observed only in homogenous wires, in which case the transition occurs when the normal resistance is close to $h/4e^2$. Inhomogeneous wires, on the other hand, exhibit a mixed behavior, such that signatures of the superconducting and insulating regimes can be observed in the same sample. The resistance versus temperature curves of inhomogeneous wires show multiple steps, each corresponding to a weak link constriction (WLC) present in the wire. Similarly, each WLC generates a differential resistance peak when the bias current reaches the critical current of the WLC. Due to the presence of WLCs an inhomogeneous wire splits into a sequence of weakly interacting segments where each segment can act as a superconductor or as an insulator. Thus the entire wire then shows a mixed behavior. △ Less

Submitted 19 January, 2004; originally announced January 2004.

Comments: 4 pages, 4 figures, 1 table