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Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates
Authors:
Wojciech Rudno-Rudziński,
Michał Gawełczyk,
Paweł Podemski,
Ramasubramanian Balasubramanian,
Vitalii Sichkovskyi,
Amnon J. Willinger,
Gadi Eisenstein,
Johann P. Reithmaier,
Grzegorz Sęk
Abstract:
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 micrometers, compatible wi…
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Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 micrometers, compatible with established telecom platform. Using different dislocation defects filtering layers, exploiting strained superlattices and supplementary QD layers, we mitigate the effects of lattice constant and thermal expansion mismatches between III-V materials and Si during growth. Complementary optical spectroscopy techniques, i.e. photoreflectance and temperature-, time- and polarization- resolved photoluminescence, allow us to determine the optical quality and application potential of the obtained structures by comparing them to a reference sample -- state-of-the-art QDs grown on InP. Experimental findings are supported by calculations of excitonic states and optical transitions by combining multiband k.p and configuration-interaction methods. We show that our design of structures prevents the generation of a considerable density of defects, as intended. The emission of Si-based structures appears to be much broader than for the reference dots, due to the creation of different QD populations which might be a disadvantage in particular laser applications, however, could be favourable for others, e.g. in broadly tunable devices, sensors, or optical amplifiers. Eventually, we identify the overall most promising combination of defect filtering layers, discuss its advantages and limitations, and prospects for further improvements.
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Submitted 20 March, 2024;
originally announced March 2024.
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Strategies for the alignment of electronic states in quantum-dot tunnel-injection lasers and their influence on the emission dynamics
Authors:
Michael Lorke,
Igor Khanonkin,
Stephan Michael,
Johann Peter Reithmaier,
Gadi Eisenstein,
Frank Jahnke
Abstract:
In quantum-dot tunnel-injection lasers, the excited charge carriers are efficiently captured from the bulk states via an injector quantum well and then transferred into the quantum dots via a tunnel barrier. The alignment of the electronic levels is crucial for the high efficiency of these processes and especially for the fast modulation dynamics of these lasers. In particular, the quantum mechani…
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In quantum-dot tunnel-injection lasers, the excited charge carriers are efficiently captured from the bulk states via an injector quantum well and then transferred into the quantum dots via a tunnel barrier. The alignment of the electronic levels is crucial for the high efficiency of these processes and especially for the fast modulation dynamics of these lasers. In particular, the quantum mechanical nature of the tunneling process must be taken into account in the transition from two-dimensional quantum well states to zero-dimensional quantum dot states. This results in hybrid states, from which the scattering into the quantum-dot ground states takes place. We combine electronic state calculations of the tunnel-injection structures with many-body calculations of the scattering processes and insert this into a complete laser simulator. This allows us to study the influence of the level alignment and limitations due to inhomogeneous quantum-dot distributions. We find that the optimal alignment deviates from a simple picture in which the of the quantum-dot ground state energies are one LO-phonon energy below the injector quantum well ground state. \author{Frank Jahnke
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Submitted 28 February, 2024;
originally announced February 2024.
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Hole spin coherence in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
Authors:
E. Evers,
N. E. Kopteva,
V. Nedelea,
A. Kors,
R. Kaur,
J. P. Reithmaier,
M. Benyoucef,
M. Bayer,
A. Greilich
Abstract:
We report measurements of the longitudinal and transverse spin relaxation times of holes in an ensemble of self-assembled InAs/InAlGaAs quantum dots (QDs), emitting in the telecom spectral range. The spin coherence of a single carrier is determined using spin mode-locking in the inhomogeneous ensemble of QDs. Modeling the signal allows us to extract the hole spin coherence time to be in the range…
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We report measurements of the longitudinal and transverse spin relaxation times of holes in an ensemble of self-assembled InAs/InAlGaAs quantum dots (QDs), emitting in the telecom spectral range. The spin coherence of a single carrier is determined using spin mode-locking in the inhomogeneous ensemble of QDs. Modeling the signal allows us to extract the hole spin coherence time to be in the range of T$_2 = 0.02-0.4$ $μ$s. The longitudinal spin relaxation time T$_1 = 0.5$ $μ$s is measured using the spin inertia method.
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Submitted 6 November, 2023;
originally announced November 2023.
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Carrier dynamics in quantum-dot tunnel-injection structures: microscopic theory and experiment
Authors:
Michael Lorke,
Igor Khanonkin,
Stephan Michael,
Johann Peter Reithmaier,
Gadi Eisenstein,
Frank Jahnke
Abstract:
Tunneling-injection structures are incorporated in semiconductor lasers in order to overcome the fundamental dynamical limitation due to hot carrier injection by providing a carrier transport path from a cold carrier reservoir. The tunneling process itself depends on band alignment between quantum-dot levels and the injector quantum well, especially as in these devices LO-phonon scattering is domi…
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Tunneling-injection structures are incorporated in semiconductor lasers in order to overcome the fundamental dynamical limitation due to hot carrier injection by providing a carrier transport path from a cold carrier reservoir. The tunneling process itself depends on band alignment between quantum-dot levels and the injector quantum well, especially as in these devices LO-phonon scattering is dominant. Quantum dots with their first excited state near the quantum well bottom profit most from tunnel coupling. As inhomogeneous broadening is omnipresent in quantum dot structures, this implies that individual members of the ensemble couple differently to the injector quantum well. Quantum dots with higher energy profit less, as the phonon couples to higher, less occupied states. Likewise, if the energy difference between ground state and quantum well exceeds the LO phonon energy, scattering becomes increasingly inefficient. Therefore, within 20-30meV we find Quantum Dots that benefit substantially different from the tunnel coupling. Furthermore, in quantum dots with increasing confinement depth, excited states become sucessively confined. Here, scattering gets more efficient again, as subsequent excited states reach the phonon resonance with the quantum well bottom. Our results provide guidelines for the optimization of tunnel-injection lasers. Theoretical results for electronic state caluluations in connection with carrier-phonon and carrier-carrier scattering are compared to experimental results of the temporal gain recovery after a short pulse perturbation.
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Submitted 31 May, 2022;
originally announced May 2022.
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On the carrier transport and radiative recombination mechanisms in tunneling injection quantum dot lasers
Authors:
V. Mikhelashvili,
S. Bauer,
I. Khanonkin,
O. Eyal,
G. Seri,
L. Gal,
J. P. Reithmaier,
G. Eisenstein
Abstract:
We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is accompanied by physical models that distinguish between different current flow and light emission mechanisms for different applied voltages and temperature ranges. Three…
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We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is accompanied by physical models that distinguish between different current flow and light emission mechanisms for different applied voltages and temperature ranges. Three exponential regimes in the I - V characteristics were identified for low bias levels where no optical radiation takes place. At the lowest bias levels, the diffusion-recombination mechanism based on the classical Shockley-Reid-Hall theory dominates. This is followed, at low and near room temperature, by a combination of weak tunneling and generation-recombination, respectively. In the third exponential region, for all temperatures carrier transport is dictated by strong tunneling, which is characterized by a temperature-independent slope of the I - V curves and a variable ideality factor. The I - V results were compared to a conventional QD laser in which the current flow mechanisms of the first and third types are absent, which clearly demonstrates the key role played by the TI layer.
In the post-exponential voltage range, when the diodes are in the high injection regime, the characteristics of the two types of diodes are identical. The typical behavior at the threshold current, where the output power increases fast has a clear signature in the I - V characteristics. Finally, an analytical quantitative relationship is established between the light output power and the applied voltage and current as well as the carrier density participating in radiative recombination.
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Submitted 14 August, 2021;
originally announced August 2021.
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Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
Authors:
M. Gawełczyk,
P. Wyborski,
P. Podemski,
J. P. Reithmaier,
S. Höfling,
G. Sęk
Abstract:
We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. This is based on probing the optical transitions via pol…
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We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. This is based on probing the optical transitions via polarization-resolved microphotoluminescence excitation ($μ$PLE) measurement performed on single nanostructures combined with theoretical calculation of neutral and charged exciton optical properties. We successfully probe absorption-like spectra for individual bright states forming the exciton ground-state fine structure, as well as for the negatively charged exciton. Confronting the calculated spectrum of excitonic absorption with $μ$PLE traces, we identify optical transitions involving states that contain carriers at various excited levels related to the longest dimension. Based on cross-polarized excitation-detection scheme, we show very well conserved spin configuration during orbital relaxation of the exciton from a number of excited states comparable to the quasi-resonant pum** via the optical phonon, and no polarization memory for the trion, as theoretically expected.
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Submitted 28 June, 2021;
originally announced June 2021.
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InP-based single-photon sources operating at telecom C-band with increased extraction efficiency
Authors:
A. Musiał,
M. Mikulicz,
P. Mrowiński,
A. Zielińska,
P. Sitarek,
P. Wyborski,
M. Kuniej,
J. P. Reithmaier,
G. Sęk,
M. Benyoucef
Abstract:
In this work we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded directly in an InP matrix. Low QD spatial density on th…
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In this work we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded directly in an InP matrix. Low QD spatial density on the order of 5x108 cm-2 to ~2x109 cm-2 and symmetric shape of these nanostructures together with spectral range of emission makes them relevant for quantum communication applications. The engineering of extraction efficiency is realized by combining a bottom distributed Bragg reflector consisting of 25 pairs of InP/In0.53Ga0.37Al0.1As layers and cylindrical photonic confinement structures. Realization of such technologically non-demanding approach even in a non-deterministic fashion results in photon extraction efficiency of (13.3+/-2)% into 0.4 numerical aperture detection optics at approx. 1560 nm emission wavelength, i.e., close to the center of the telecom C-band.
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Submitted 31 January, 2021;
originally announced February 2021.
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Magneto-optical characterization of trions in symmetric InP-based quantum dots for quantum communication applications
Authors:
Wojciech Rudno-Rudziński,
Marek Burakowski,
Johann Peter Reithmaier,
Anna Musiał,
Mohamed Benyoucef
Abstract:
Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations of external magnetic field. The diamagnetic coefficients are found to be in the range of 1.5-4 μeV/{\T^2}, and 8-15 μeV/{\T^2}, respectively out of plane and in…
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Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations of external magnetic field. The diamagnetic coefficients are found to be in the range of 1.5-4 μeV/{\T^2}, and 8-15 μeV/{\T^2}, respectively out of plane and in plane of the dots. The determined values of diamagnetic shifts are related to the anisotropy of dot sizes. Trion g-factors are measured to be relatively small, in the range of 0.3-0.7 and 0.5-1.3, in both configurations respectively. Analysis of single carrier g-factors, based on the formalism of spin-correlated orbital currents, leads to the similar values for hole and electron of {\sim} 0.25 for Voigt and {\g_e} {\approx} -5; {\g_h} {\approx} +6 for Faraday configuration of magnetic field. Values of g-factors close to zero measured in Voigt configuration make the investigated dots promising for electrical tuning of g-factor sign, required for schemes of single spin control in qubit applications.
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Submitted 24 January, 2021;
originally announced January 2021.
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Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
Authors:
Paweł Holewa,
Michał Gawełczyk,
Aleksander Maryński,
Paweł Wyborski,
Johann Peter Reithmaier,
Grzegorz Sęk,
Mohamed Benyoucef,
Marcin Syperek
Abstract:
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emis…
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We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emission in the range of $1.4-2.0$ $μ$m, essential for many near-infrared photonic applications. We find that, in contrast to the InAs/InP system, the multimodal distribution results here from a two-monolayer difference in QD height between consecutive families of dots. This may stem from the long-range ordering in the quaternary barrier alloy that stabilizes QD nucleation. Measuring the photoluminescence (PL) lifetime of the spectrally broad emission, we find a nearly dispersionless value of $1.3\pm0.3$ ns. Finally, we examine the temperature dependence of emission characteristics. We underline the impact of localized states in the wetting layer playing the role of carrier reservoir during thermal carrier redistribution. We determine the hole escape to the InAlGaAs barrier to be a primary PL quenching mechanism in these QDs.
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Submitted 18 November, 2020;
originally announced November 2020.
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Room Temperature Quantum Coherent Revival in an Ensemble of Artificial Atoms
Authors:
Igor Khanonkin,
Ori Eyal,
Johann Peter Reithmaier,
Gadi Eisenstein
Abstract:
We report a demonstration of the hallmark concept of quantum optics: periodic collapse and revival of quantum coherence (QCR) in a room temperature ensemble of quantum dots (QD). Control over quantum states, inherent to QCR, together with the dynamical QD properties present an opportunity for practical room temperature building blocks of quantum information processing. The amplitude decay of QCR i…
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We report a demonstration of the hallmark concept of quantum optics: periodic collapse and revival of quantum coherence (QCR) in a room temperature ensemble of quantum dots (QD). Control over quantum states, inherent to QCR, together with the dynamical QD properties present an opportunity for practical room temperature building blocks of quantum information processing. The amplitude decay of QCR is dictated by the QD homogeneous linewidth, thus, enabling its extraction in a double-pulse Ramsey-type experiment. The more common photon echo technique was also invoked and yielded the same linewidth. Measured electrical bias and temperature dependencies of the transverse relaxation times enable to determine the two main decoherence mechanisms: carrier-carrier and carrier-phonon scatterings.
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Submitted 28 October, 2020;
originally announced October 2020.
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Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 μm
Authors:
M. Syperek,
Ł. Dusanowski,
M. Gawełczyk,
G. Sęk,
A. Somers,
J. P. Reithmaier,
S. Höfling,
J. Misiewicz
Abstract:
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pum**…
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Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pum** conditions on spin polarization and spin memory of the quantum dash ground state. We show that a spin pum** scheme, utilizing the longitudinal-optical-phonon-mediated coherent scattering process, can lead to the polarization degree above 50%. We discuss the role of intrinsic asymmetries in the quantum dash that influence values of the degree of polarization and its time evolution.
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Submitted 24 July, 2018;
originally announced July 2018.
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Carrier Dynamics in a Tunneling Injection Quantum Dot Semiconductor Optical Amplifier
Authors:
I. Khanonkin,
M. Lorke,
S. Michael,
A. K. Mishra,
J. P. Reithmaier,
F. Jahnke,
G. Eisenstein
Abstract:
The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the fact that it avoids hot carrier injection, which is a key performance-limiting factor in all semiconductor lasers. The tunneling injection process is…
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The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the fact that it avoids hot carrier injection, which is a key performance-limiting factor in all semiconductor lasers. The tunneling injection process is not fully understood microscopically and therefore it is difficult to optimize those laser structures. We present here a numerical study of the broad band carrier dynamics in a tunneling injection quantum dot gain medium in the form of an optical amplifier operating at 1.55 um. Charge carrier tunneling occurs in a hybrid state that joins the quantum dot first excited state and the confined quantum well - injection well states. The hybrid state, which is placed energetically roughly one LO phonon above the ground state and has a spectral extent of about 5 meV , dominates the carrier injection to the ground state. We calculate the dynamical response of the inversion across the entire gain spectrum following a short pulse perturbation at various wavelengths and for two bias currents. At a high bias of 200 mA, the entire spectrum exhibits gain; at 30 mA, the system exhibits a mixed gain - absorption spectrum. The carrier dynamics in the injection well is calculated simultaneously. We discuss the role of the pulse excitation wavelengths relative to the gain spectrum peak and demonstrate that the injection well responds to all perturbation wavelengths, even those which are far from the region where the tunneling injection process dominates.
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Submitted 22 July, 2018;
originally announced July 2018.
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Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 μm
Authors:
Ł. Dusanowski,
M. Gawełczyk,
J. Misiewicz,
S. Höfling,
J. P. Reithmaier,
G. Sęk
Abstract:
We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths. The structures are highly elongated and of large volume, which results in atypical carrier confinement characteristics with $s$-$p$ shell energy splittings far below the optical phonon energy, which strongly affects the…
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We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths. The structures are highly elongated and of large volume, which results in atypical carrier confinement characteristics with $s$-$p$ shell energy splittings far below the optical phonon energy, which strongly affects the phonon-assisted relaxation. Probing the emission kinetics with time-resolved microphotoluminescence from a single dot, we observe a strongly non-monotonic temperature dependence of the charged exciton lifetime. Using a kinetic rate-equation model, we find that a relaxation side-path through the excited charged exciton triplet states may lead to such behavior. This, however, involves efficient singlet-triplet relaxation via the electron spin-flip. Thus, we interpret the results as an indirect observation of strongly enhanced electron spin relaxation without magnetic field, possibly resulting from atypical confinement characteristics.
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Submitted 28 July, 2018; v1 submitted 8 July, 2018;
originally announced July 2018.
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Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths
Authors:
A. V. Mikhailov,
V. V. Belykh,
D. R. Yakovlev,
P. S. Grigoryev,
J. P. Reithmaier,
M. Benyoucef,
M. Bayer
Abstract:
We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As/InP quantum dots with emission wavelengths around $1.5$~$μ$m by pump-probe Faraday rotation spectroscopy. Electron spin dephasing due to the randomly oriented nuclear Overhauser fields is observed. At low temperatures we find a sub-microsecond longitudinal electron spin re…
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We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As/InP quantum dots with emission wavelengths around $1.5$~$μ$m by pump-probe Faraday rotation spectroscopy. Electron spin dephasing due to the randomly oriented nuclear Overhauser fields is observed. At low temperatures we find a sub-microsecond longitudinal electron spin relaxation time $T_1$ which unexpectedly strongly depends on temperature. At high temperatures the electron spin relaxation time is limited by optical phonon scattering through spin-orbit interaction decreasing down to $0.1$~ns at 260~K. We show that the hole spin relaxation is activated much more effectively by a temperature increase compared to the electrons.
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Submitted 29 December, 2018; v1 submitted 27 June, 2018;
originally announced June 2018.
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Telecom wavelength single quantum dots with very small excitonic fine-structure splitting
Authors:
Andrei Kors,
Johann Peter Reithmaier,
Mohamed Benyoucef
Abstract:
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $μ$m) with ultra-small excitonic fine-structure splitting of ~2 $μ$eV. The QDs are grown on distributed Bragg reflector and systematically characterized by micro-photoluminescence ($μ$-PL) measurements. One order of magnitude of QD PL intensity enhancement is observed in comparison…
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We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $μ$m) with ultra-small excitonic fine-structure splitting of ~2 $μ$eV. The QDs are grown on distributed Bragg reflector and systematically characterized by micro-photoluminescence ($μ$-PL) measurements. One order of magnitude of QD PL intensity enhancement is observed in comparison with as-grown samples. Combination of power-dependent and polarization-resolved measurements reveal background-free exciton, biexciton and dark exciton emission with resolution-limited linewidth below 35 $μ$eV and biexciton binding energy of ~1 meV. The results are confirmed by statistical measurements of about 20 QDs.
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Submitted 22 January, 2018;
originally announced January 2018.
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Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures
Authors:
M. Gawełczyk,
M. Syperek,
A. Maryński,
P. Mrowiński,
Ł. Dusanowski,
K. Gawarecki,
J. Misiewicz,
A. Somers,
J. P. Reithmaier,
S. Höfling,
G. Sęk
Abstract:
We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Considering general asymmetry- and size-driven effects, we illustrate them with a detailed analysis of InAs/AlGaInAs/InP elongated quantum dots. These offer a widely varied confinement characteristics tuned by size and geomet…
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We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Considering general asymmetry- and size-driven effects, we illustrate them with a detailed analysis of InAs/AlGaInAs/InP elongated quantum dots. These offer a widely varied confinement characteristics tuned by size and geometry that are tailored during the growth process, which leads to emission in the application-relevant spectral range of 1.25-1.65 μm. By exploring the interplay of the very shallow hole confining potential and widely varying structural asymmetry, we show that a transition from the strong through intermediate to even weak confinement regime is possible in nanostructures of this kind. This has a significant impact on exciton recombination dynamics and the polarization of emission, which are shown to depend not only on details of the calculated excitonic states but also on excitation conditions in the photoluminescence experiments. We estimate the impact of the latter and propose a way to determine the intrinsic polarization-dependent exciton light-matter coupling based on kinetic characteristics.
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Submitted 8 January, 2018; v1 submitted 21 September, 2017;
originally announced September 2017.
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Ramsey fringes in a room temperature quantum dot semiconductor optical amplifier
Authors:
Igor Khanonkin,
Akhilesh K. Mishra,
Ouri Karni,
Saddam Banyoudeh,
Florian Schnabel,
Vitalii Sichkovskyi,
Vissarion Michelashvili,
Johann P. Reithmaier,
Gadi Eisenstein
Abstract:
The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical applications. We demonstrate here a quantum interference phenomena, Ramsey fringes, in an inhomogeneously broadened InAs/InP quantum dot (QD) ensemble in the form of a 1.5…
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The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical applications. We demonstrate here a quantum interference phenomena, Ramsey fringes, in an inhomogeneously broadened InAs/InP quantum dot (QD) ensemble in the form of a 1.5 mm long optical amplifier operating at room temperature. Observation of Ramsey fringes in semiconductor QD was previously achieved only at cryogenic temperatures and only in isolated single dot systems. A high-resolution pump probe scheme where both pulses are characterized by cross frequency resolved optical gating (X-FROG) reveals a clear oscillatory behavior both in the amplitude and the instantaneous frequency of the probe pulse with a period that equals one optical cycle at operational wavelength. Using nominal input delays of 600 to 900 fs and scanning the separation around each delay in 1 fs steps, we map the evolution of the material de-coherence and extract a coherence time. Moreover we notice a unique phenomenon, which can not be observed in single dot systems, that the temporal position of the output probe pulse also oscillates with the same periodicity but with a quarter cycle delay relative to the intensity variations. This delay is the time domain manifestation of coupling between the real and imaginary parts of the complex susceptibility.
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Submitted 2 December, 2017; v1 submitted 21 August, 2017;
originally announced August 2017.
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Coherent control in room-temperature quantum dot semiconductor optical amplifiers using shaped pulses
Authors:
Ouri Karni,
Akhilesh Kumar Mishra,
Gadi Eisenstein,
Vitalii Ivanov,
Johann Peter Reithmaier
Abstract:
We demonstrate the ability to control quantum coherent Rabi-oscillations in a room-temperature quantum dot semiconductor optical amplifier (SOA) by sha** the light pulses that trigger them. The experiments described here show that when the excitation is resonant with the short wavelength slope of the SOA gain spectrum, a linear frequency chirp affects its ability to trigger Rabi-oscillations wit…
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We demonstrate the ability to control quantum coherent Rabi-oscillations in a room-temperature quantum dot semiconductor optical amplifier (SOA) by sha** the light pulses that trigger them. The experiments described here show that when the excitation is resonant with the short wavelength slope of the SOA gain spectrum, a linear frequency chirp affects its ability to trigger Rabi-oscillations within the SOA: A negative chirp inhibits Rabi-oscillations whereas a positive chirp can enhance them, relative to the interaction of a transform limited pulse. The experiments are confirmed by a numerical calculation that models the propagation of the experimentally shaped pulses through the SOA.
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Submitted 21 January, 2016;
originally announced January 2016.
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Large anisotropy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots
Authors:
V. V. Belykh,
D. R. Yakovlev,
J. J. Schindler,
E. A. Zhukov,
M. A. Semina,
M. Yacob,
J. P. Reithmaier,
M. Benyoucef,
M. Bayer
Abstract:
A detailed study of the $g$-factor anisotropy of electrons and holes in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled quantum dots emitting in the telecom spectral range of $1.5-1.6$ $μ$m (around 0.8 eV photon energy) is performed by time-resolved pump-probe ellipticity technique using a superconducting vector magnet. All components of the $g$-factor tensors are measured, including their…
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A detailed study of the $g$-factor anisotropy of electrons and holes in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled quantum dots emitting in the telecom spectral range of $1.5-1.6$ $μ$m (around 0.8 eV photon energy) is performed by time-resolved pump-probe ellipticity technique using a superconducting vector magnet. All components of the $g$-factor tensors are measured, including their spread in the quantum dot (QD) ensemble. Surprisingly, the electron $g$ factor shows a large anisotropy changing from $g_{\mathrm{e},x}= -1.63$ to $g_{\mathrm{e},z}= -2.52$ between directions perpendicular and parallel to the dot growth axis, respectively, at an energy of 0.82 eV. The hole $g$-factor anisotropy at this energy is even stronger: $|g_{\text{h},x}|= 0.64$ and $|g_{\text{h},z}|= 2.29$. On the other hand, the in-plane anisotropies of electron and hole $g$ factors are small. The pronounced out-of-plane anisotropy is also observed for the spread of the $g$ factors, determined from the spin dephasing time. The hole longitudinal $g$ factors are described with a theoretical model that allows us to estimate the QD parameters. We find that the QD height-to-diameter ratio increases while the indium composition decreases with increasing QD emission energy.
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Submitted 12 March, 2016; v1 submitted 11 December, 2015;
originally announced December 2015.
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Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths
Authors:
V. V. Belykh,
A. Greilich,
D. R. Yakovlev,
M. Yacob,
J. P. Reithmaier,
M. Benyoucef,
M. Bayer
Abstract:
We extend the range of quantum dot (QD) emission energies where electron and hole $g$ factors have been measured to the practically important telecom range. The spin dynamics in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled QDs with emission wavelengths at about 1.6 $μ$m grown on InP substrate is investigated by pump-probe Faraday rotation spectroscopy in a magnetic field. Pronounced osc…
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We extend the range of quantum dot (QD) emission energies where electron and hole $g$ factors have been measured to the practically important telecom range. The spin dynamics in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled QDs with emission wavelengths at about 1.6 $μ$m grown on InP substrate is investigated by pump-probe Faraday rotation spectroscopy in a magnetic field. Pronounced oscillations on two different frequencies, corresponding to the QD electron and hole spin precessions about the field are observed from which the corresponding $g$ factors are determined. The electron $g$ factor of about $-1.9$ has the largest negative value so far measured for III-V QDs by optical methods. This value, as well as the $g$ factors reported for other III-V QDs, differ from those expected for bulk semiconductors at the same emission energies, and this difference increases significantly for decreasing energies.
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Submitted 8 October, 2015;
originally announced October 2015.
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Towards Faster InP Photonic Crystal All-Optical-Gates
Authors:
Gregory Moille,
Sylvain Combrié,
Kerstin Fuchs,
Matusala Yacob,
Johann Peter Reithmaier,
Alfredo de Rossi
Abstract:
We demonstrated a two-fold acceleration of the fast time constant characterising the recovery of a P-doped Indium-Phosphide Photonic Crystal all-optical gate. Time-resolved spectral analysis is compared with a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This open the per…
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We demonstrated a two-fold acceleration of the fast time constant characterising the recovery of a P-doped Indium-Phosphide Photonic Crystal all-optical gate. Time-resolved spectral analysis is compared with a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This open the perspective for faster yet efficient nanophotonic all-optical gates.
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Submitted 6 June, 2015; v1 submitted 3 June, 2015;
originally announced June 2015.
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Nonlinear pulse propagation in InAs/InP quantum-dot optical amplifiers: Rabi-oscillations in the presence of non-resonant nonlinearities
Authors:
Ouri Karni,
Akilesh Kumar Mishra,
Gad Eisenstein,
Johann Peter Reithmaier
Abstract:
We study the interplay between coherent light-matter interactions and non-resonant pulse propagation effects when ultra-short pulses propagate in room-temperature quantum-dot (QD) semiconductor optical amplifiers (SOAs). The signatures observed on a pulse envelope after propagating in a transparent SOA, when coherent Rabi-oscillations are absent, highlight the contribution of two-photon absorption…
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We study the interplay between coherent light-matter interactions and non-resonant pulse propagation effects when ultra-short pulses propagate in room-temperature quantum-dot (QD) semiconductor optical amplifiers (SOAs). The signatures observed on a pulse envelope after propagating in a transparent SOA, when coherent Rabi-oscillations are absent, highlight the contribution of two-photon absorption (TPA), and its accompanying Kerr-like effect, as well as of linear dispersion, to the modification of the pulse complex electric field profile. These effects are incorporated into our previously developed finite-difference time-domain comprehensive model that describes the interaction between the pulses and the QD SOA. The present, generalized, model is used to investigate the combined effect of coherent and non-resonant phenomena in the gain and absorption regimes of the QD SOA. It confirms that in the QD SOA we examined, linear dispersion in the presence of the Kerr-like effect causes pulse compression, which counteracts the pulse peak suppression due to TPA, and also modifies the patterns which the coherent Rabi-oscillations imprint on the pulse envelope under both gain and absorption conditions. The inclusion of these effects leads to a better fit with experiments and to a better understanding of the interplay among the various mechanisms so as to be able to better analyze more complex future experiments of coherent light-matter interaction induced by short pulses propagating along an SOA.
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Submitted 21 September, 2014;
originally announced September 2014.
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Coherent control in a semiconductor optical amplifier operating at room temperature
Authors:
Amir Capua,
Ouri Karni,
Gadi Eisenstein,
Vitalii Sichkovskyi,
Vitalii Ivanov,
Johann Peter Reithmaier
Abstract:
We demonstrate the Ramsey analogous experiment known as coherent control, taking place along an electrically-driven semiconductor optical amplifier operating at room temperature.
We demonstrate the Ramsey analogous experiment known as coherent control, taking place along an electrically-driven semiconductor optical amplifier operating at room temperature.
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Submitted 20 May, 2014;
originally announced May 2014.
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Electron wavefunction probing in room-temperature semiconductors: direct observation of Rabi oscillations and self-induced transparency
Authors:
Amir Capua,
Ouri Karni,
Gadi Eisenstein,
Johann Peter Reithmaier
Abstract:
Quantum coherent light-matter interactions have been at the forefront of scientific interest since the fundamental predictions of Einstein and the later work of Rabi. Direct observation of quantum coherent interactions entails probing the electronic wavefunction which requires that the electronic state of the matter does not de-phase during the measurement, a condition that can be satisfied by len…
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Quantum coherent light-matter interactions have been at the forefront of scientific interest since the fundamental predictions of Einstein and the later work of Rabi. Direct observation of quantum coherent interactions entails probing the electronic wavefunction which requires that the electronic state of the matter does not de-phase during the measurement, a condition that can be satisfied by lengthening the coherence time or by shortening the observation time. The short de-phasing time in semiconductors has dictated that all coherent effects reported to date have been recorded directly only at cryogenic temperatures. Here we report on the first direct electronic wavefunction probing in a room-temperature semiconductor. Employing an ultrafast characterization scheme we have demonstrated Rabi oscillations and self-induced transparency in an electrically driven, room-temperature semiconductor laser amplifier, revealing the most intimate details of the light-matter interactions seen to date. The ability to employ quantum effects in solid-state media, which operate at elevated temperatures, will finally bring true quantum mechanical concepts into the realm of practical devices.
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Submitted 25 October, 2012;
originally announced October 2012.
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Spontaneously Localized Photonic Modes Due to Disorder in the Dielectric Constant
Authors:
Y. Kodriano,
D. Gershoni,
E. Linder,
B. Shapiro,
M. E. Raikh,
J. P. Reithmaier,
S. Reitzenstein,
A. Löffler,
A. Forchel
Abstract:
We present the first experimental evidence for the existence of strongly localized photonic modes due to random two dimensional fluctuations in the dielectric constant. In one direction, the modes are trapped by ordered Bragg reflecting mirrors of a planar, one wavelength long, microcavity. In the cavity plane, they are localized by disorder, which is due to randomness in the position, compositi…
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We present the first experimental evidence for the existence of strongly localized photonic modes due to random two dimensional fluctuations in the dielectric constant. In one direction, the modes are trapped by ordered Bragg reflecting mirrors of a planar, one wavelength long, microcavity. In the cavity plane, they are localized by disorder, which is due to randomness in the position, composition and sizes of quantum dots located in the anti-node of the cavity. We extend the theory of disorder induced strong localization of electron states to optical modes and obtain quantitative agreement with the main experimental observations.
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Submitted 18 April, 2010; v1 submitted 30 December, 2007;
originally announced January 2008.
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Radiative emission dynamics of quantum dots in a single cavity micropillar
Authors:
M. Schwab,
H. Kurtze,
T. Auer,
T. Berstermann,
M. Bayer,
J. Wiersig,
N. Baer,
C. Gies,
F. Jahnke,
J. P. Reithmaier,
A. Forchel,
M. Benyoucef,
P. Michler
Abstract:
The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAs-based micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a non-exponential decay of the photoluminescence where the decay rate strongly depends on the excitation intensity. A microscopic theory of the quantum dot photo…
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The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAs-based micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a non-exponential decay of the photoluminescence where the decay rate strongly depends on the excitation intensity. A microscopic theory of the quantum dot photon emission is used to explain both, the non-exponential decay and its intensity dependence. Also the transition from spontaneous to stimulated emission is studied.
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Submitted 22 June, 2006; v1 submitted 30 May, 2006;
originally announced May 2006.
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Carrier and Light Trap** in Graded Quantum Well Laser Structures
Authors:
G. Aichmayr,
M. D. Martin,
H. van der Meulen,
C. Pascual,
L. Vina,
J. M. Calleja,
F. Schafer,
J. P. Reithmaier,
A. Forchel
Abstract:
We investigated the carrier and light trap** in GaInAs/AlGaAs single quantum well laser structures by means of time resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and of the cavity geometry was studied by using different AlGaAs/GaAs short-period superlattices as barriers. Our results show that grading the optical cavity impr…
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We investigated the carrier and light trap** in GaInAs/AlGaAs single quantum well laser structures by means of time resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and of the cavity geometry was studied by using different AlGaAs/GaAs short-period superlattices as barriers. Our results show that grading the optical cavity improves considerably both carrier and light trap** in the quantum well, and that the trap** efficiency is enhanced by increasing the graded confining potential.
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Submitted 26 April, 2000;
originally announced April 2000.
