Showing 1–50 of 102 results for author: Reiss, G

Disentangling complex current pathways in a metallic Ru/Co bilayer nanostructure using THz spectroscopy

Authors: Nicolas S. Beermann, Savio Fabretti, Karsten Rott, Hassan A. Hafez, Günter Reiss, Dmitry Turchinovich

Abstract: Many modern spintronic technologies, such as spin valves, spin Hall applications, and spintronic THz emitters, are based on electrons crossing buried internal interfaces within metallic nanostructures. However, the complex current pathways within such nanostructures are difficult to disentangle using conventional experimental methods. Here, we measure the conductivity of a technologically relevant… ▽ More Many modern spintronic technologies, such as spin valves, spin Hall applications, and spintronic THz emitters, are based on electrons crossing buried internal interfaces within metallic nanostructures. However, the complex current pathways within such nanostructures are difficult to disentangle using conventional experimental methods. Here, we measure the conductivity of a technologically relevant Ru/Co bilayer nanostructure in a contact-free fashion using THz time-domain spectroscopy. By applying an effective resistor network to the data, we resolve the complex current pathways within the nanostructure and determine the degree of electronic transparency of the internal interface between the Ru and Co nanolayers. △ Less

Submitted 23 November, 2022; v1 submitted 3 November, 2022; originally announced November 2022.

Journal ref: Appl. Phys. Lett. 121, 203101 (2022)

Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems

Authors: Anastasiia Moskaltsova, Denis Dyck, Jan-Michael Schmalhorst, Günter Reiss, Timo Kuschel

Abstract: We present a detailed analysis of harmonic longitudinal and Hall voltage measurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers in reference to Pt/Co and Ta/Co bilayers. Enhancement of spin-orbit torques (SOTs) and unidirectional spin Hall magnetoresistance (USMR) is achieved by introducing the second heavy metal (HM) with the opposite sign of the spin Hall angle. The extracted SOT e… ▽ More We present a detailed analysis of harmonic longitudinal and Hall voltage measurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers in reference to Pt/Co and Ta/Co bilayers. Enhancement of spin-orbit torques (SOTs) and unidirectional spin Hall magnetoresistance (USMR) is achieved by introducing the second heavy metal (HM) with the opposite sign of the spin Hall angle. The extracted SOT efficiencies are larger for the trilayers as compared to the bilayers, confirming the enhanced values reported for the trilayers with perpendicularly magnetized Co. The maximum effective spin Hall angle found for the Pt/Co/Ta trilayer reaches $θ_{SH}$ = 20%. The USMR of the trilayer yields up to 27% higher effect as for the respective bilayers with the largest effective USMR amplitude of -0.32 $\times$ 10$^{-5}$ for the Pt/Co/Ta trilayer at a charge current density of 10$^{7}$ A/cm$^2$. △ Less

Submitted 16 November, 2021; originally announced November 2021.

Enhancement in Thermally Generated Spin Voltage at Pd/NiFe$_2$O$_4$ Interfaces by the Growth on Lattice-Matched Substrates

Authors: A. Rastogi, Z. Li, A. V. Singh, S. Regmi, T. Peters, P. Bougiatioti, D. Carsten né Meier, J. B. Mohammadi, B. Khodadadi, T. Mewes, R. Mishra, J. Gazquez, A. Y. Borisevich, Z. Galazka, R. Uecker, G. Reiss, T. Kuschel, A. Gupta

Abstract: Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $μ$m) are grown by pulsed laser deposition on isostructural spinel MgAl$_2$O$_4$, MgGa$_2$O$_4$, and CoGa$_2$O$_4$ substrates with lattice mismatch varying between 3.2% and 0.2%. For the… ▽ More Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $μ$m) are grown by pulsed laser deposition on isostructural spinel MgAl$_2$O$_4$, MgGa$_2$O$_4$, and CoGa$_2$O$_4$ substrates with lattice mismatch varying between 3.2% and 0.2%. For the thinner films ($\leq$ 330 nm), an increase in the spin Seebeck voltage is observed with decreasing lattice mismatch, which correlates well with a decrease in the Gilbert dam** parameter as determined from ferromagnetic resonance measurements. High resolution transmission electron microscopy studies indicate substantial decrease of antiphase boundary and interface defects that cause strain-relaxation, i.e., misfit dislocations, in the films with decreasing lattice mismatch. This highlights the importance of reducing structural defects in spinel ferrites for efficient spin injection. It is further shown that angle-dependent spin Seebeck effect measurements provide a qualitative method to probe for in-plane magnetic anisotropies present in the films. △ Less

Submitted 1 June, 2020; originally announced June 2020.

Comments: 18 pages, 6 figures

Journal ref: Phys. Rev. Applied 14, 014014 (2020)

Sub-Nanosecond Spin-Transfer Torque in an Ensemble of Superparamagnetic-Like Nanomagnets

Authors: Satoru Emori, Christoph Klewe, Jan-Michael Schmalhorst, Jan Krieft, Padraic Shafer, Youngmin Lim, David A. Smith, Arjun Sapkota, Abhishek Srivastava, Claudia Mewes, Zijian Jiang, Behrouz Khodadadi, Hesham Elmkharram, Jean J. Heremans, Elke Arenholz, Gunter Reiss, Tim Mewes

Abstract: Spin currents can exert spin-transfer torques on magnetic systems even in the limit of vanishingly small net magnetization, as is the case for antiferromagnets. Here, we experimentally show that a spin-transfer torque is operative in a material with weak, short-range magnetic order -- namely, a macroscopic ensemble of superparamagnetic-like Co nanomagnets. We employ element- and time-resolved X-ra… ▽ More Spin currents can exert spin-transfer torques on magnetic systems even in the limit of vanishingly small net magnetization, as is the case for antiferromagnets. Here, we experimentally show that a spin-transfer torque is operative in a material with weak, short-range magnetic order -- namely, a macroscopic ensemble of superparamagnetic-like Co nanomagnets. We employ element- and time-resolved X-ray ferromagnetic resonance (XFMR) spectroscopy to directly detect sub-ns dynamics of the Co nanomagnets, excited into precession with cone angle $\geq$0.003$^{\circ}$ by an oscillating spin current. XFMR measurements reveal that as the net moment of the ensemble decreases, the strength of the spin-transfer torque increases relative to those of magnetic field torques. Our findings point to spin-transfer torque as an effective way to manipulate the state of nanomagnet ensembles at sub-ns timescales. △ Less

Submitted 6 May, 2020; originally announced May 2020.

Resistive contribution in electrical switching experiments with antiferromagnets

Authors: Tristan Matalla-Wagner, Jan-Michael Schmalhorst, Günter Reiss, Nobumichi Tamura, Markus Meinert

Abstract: Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse anisotropic magnetoresistance at planar cross- or star-shaped devices with four or eight arms, respectively. Depending on the material, the current density necessa… ▽ More Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse anisotropic magnetoresistance at planar cross- or star-shaped devices with four or eight arms, respectively. Depending on the material, the current density necessary to switch the magnetic state can be large, often close to the destruction threshold of the device. We demonstrate that the resulting electrical stress changes the film resistivity locally and thereby breaks the fourfold rotational symmetry of the conductor. This symmetry breaking due to film inhomogeneity produces signals, that resemble the anisotropic magnetoresistance and is experimentally seen as a "saw-tooth"-shaped transverse resistivity. This artifact can persist over many repeats of the switching experiment and is not easily separable from the magnetic contribution. We discuss the origin of the artifact, elucidate the role of the film crystallinity, and propose approaches how to separate the resistive contribution from the magnetic contribution. △ Less

Submitted 18 October, 2019; originally announced October 2019.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. Research 2, 033077 (2020)

Superparamagnetic dwell times and tuning of switching rates in perpendicular CoFeB/MgO/CoFeB tunnel junctions

Authors: G. Reiss, J. Ludwig, K. Rott

Abstract: Thin electrodes of magnetic tunnel junctions can show superparamagnetism at surprisingly low temperature. We analysed their thermally induced switching for varying temperature, magnetic and electric field. Although the dwell times follow an Arrhenius law, they are orders of magnitude too small compared to a model of single domain activation. Including entropic effects removes this inconsistency an… ▽ More Thin electrodes of magnetic tunnel junctions can show superparamagnetism at surprisingly low temperature. We analysed their thermally induced switching for varying temperature, magnetic and electric field. Although the dwell times follow an Arrhenius law, they are orders of magnitude too small compared to a model of single domain activation. Including entropic effects removes this inconsistency and leads to a magnetic activation volume much smaller than that of the electrode. Comparing data for varying barrier thickness then allows to separate the impact of Zeman energy, spin-transfer-torque and voltage induced anisotropy change on the dwell times. Based on these results, we demonstrate a tuning of the switching rates by combining magnetic and electric fields, which opens a path for their application in noisy neural networks. △ Less

Submitted 20 September, 2019; v1 submitted 6 August, 2019; originally announced August 2019.

Low dam** magnetic properties and perpendicular magnetic anisotropy with strong volume contribution in the Heusler alloy Fe1.5CoGe

Authors: Andres Conca, Alessia Niesen, Günter Reiss, Burkard Hillebrands

Abstract: We present a study of the dynamic magnetic properties of TiN-buffered epitaxial thin films of the Heusler alloy Fe$_{1.5}$CoGe. Thickness series annealed at different temperatures are prepared and the magnetic dam** is measured, a lowest value of $α=2.18\times 10^{-3}$ is obtained. The perpendicular magnetic anisotropy properties in Fe$_{1.5}$CoGe/MgO are also characterized. The evolution of the… ▽ More We present a study of the dynamic magnetic properties of TiN-buffered epitaxial thin films of the Heusler alloy Fe$_{1.5}$CoGe. Thickness series annealed at different temperatures are prepared and the magnetic dam** is measured, a lowest value of $α=2.18\times 10^{-3}$ is obtained. The perpendicular magnetic anisotropy properties in Fe$_{1.5}$CoGe/MgO are also characterized. The evolution of the interfacial perpendicular anisotropy constant $K^{\perp}_{\rm S}$ with the annealing temperature is shown and compared with the widely used CoFeB/MgO interface. A large volume contribution to the perpendicular anisotropy of $(4.3\pm0.5)\times 10^{5}$ $\rm J/m^3$ is also found, in contrast with vanishing bulk contribution in common Co- and Fe-based Heusler alloys. △ Less

Submitted 25 April, 2019; originally announced April 2019.

Comments: 5 pages, 5 figures

Electrical Néel-order switching in magnetron-sputtered CuMnAs thin films

Authors: Tristan Matalla-Wagner, Matthias-Felix Rath, Dominik Graulich, Jan-Michael Schmalhorst, Günter Reiss, Markus Meinert

Abstract: Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal varian… ▽ More Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for high-quality films grown with molecular beam epitaxy. Here, we demonstrate that the magnetic order of magnetron-sputtered CuMnAs films can also be manipulated by electrical current pulses. The switching efficiency and relaxation as a function of temperature, current density, and pulse width can be described by a thermal-activation model. Our findings demonstrate that CuMnAs can be fabricated with an industry-compatible deposition technique, which will accelerate the development cycle of devices based on this remarkable material. △ Less

Submitted 25 June, 2019; v1 submitted 29 March, 2019; originally announced March 2019.

Comments: 6 + 4 pages, 4 + 4 figures (main + appendix)

Journal ref: Phys. Rev. Applied 12, 064003 (2019)

Spincaloritronic measurements: a round robin comparison of the longitudinal spin Seebeck effect

Authors: A. Sola, V. Basso, M. Kuepferling, M. Pasquale, D. Meier, G. Reiss, T. Kuschel, T. Kikkawa, K. Uchida, E. Saitoh, H. **, S. Boona, S. Watzman, J. Heremans, M. B. Jungfleisch, W. Zhang, J. E. Pearson, A. Hoffmann, H. W. Schumacher

Abstract: The rising field of spin caloritronics focuses on the interactions between spin and heat currents in a magnetic material; the observation of the spin Seebeck effect opened the route to this branch of research. This paper reports the results of a round robin test performed by five partners on a single device highlighting the reproducibility problems related to the measurements of the spin Seebeck c… ▽ More The rising field of spin caloritronics focuses on the interactions between spin and heat currents in a magnetic material; the observation of the spin Seebeck effect opened the route to this branch of research. This paper reports the results of a round robin test performed by five partners on a single device highlighting the reproducibility problems related to the measurements of the spin Seebeck coefficient, the quantity that describes the strength of the spin Seebeck effect. This work stimulated the search for more reproducible measurement methods through the analysis of the systematic effects. △ Less

Submitted 3 December, 2018; originally announced December 2018.

Comments: PDFLaTeX, 8 pages, 8 figures

Journal ref: IEEE Trans. Instrum. Meas. 68, 1765 (2019)

Tunnel magneto-Seebeck effect

Authors: Timo Kuschel, Michael Czerner, Jakob Walowski, Andy Thomas, Hans Werner Schumacher, Günter Reiss, Christian Heiliger, Markus Münzenberg

Abstract: The interplay of charge, spin and heat transport is investigated in the fascinating research field of spin caloritronics, the marriage of spintronics and thermoelectrics. Here, many new spin-dependent thermal transport phenomena in magnetic nanostructures have been explored in the recent years. One of them is the tunnel magneto-Seebeck (TMS) effect in magnetic tunnel junctions (MTJs) that has larg… ▽ More The interplay of charge, spin and heat transport is investigated in the fascinating research field of spin caloritronics, the marriage of spintronics and thermoelectrics. Here, many new spin-dependent thermal transport phenomena in magnetic nanostructures have been explored in the recent years. One of them is the tunnel magneto-Seebeck (TMS) effect in magnetic tunnel junctions (MTJs) that has large potential for future nanoelectronic devices, such as nanostructured sensors for three-dimentional thermal gradients, or scanning tunneling microscopes driven by temperature differences. The TMS describes the dependence of the MTJ's thermopower on its magnetic cofiguration when a thermal gradient is applied. In this review, we highlight the successful way from first observation of the TMS in 2011 to current ongoing developments in this research area. We emphasize on different heating techniques, material designs, applications, and additional physical aspects such as the role of the thermal conductivity of the barrier material. We further demonstrate the efficient interplay between ab initio calculations and experiments within this field, as this has led, e.g., to the detection of large TMS ratios in MTJs with half-metallic Heusler electrodes. △ Less

Submitted 6 November, 2018; v1 submitted 16 August, 2018; originally announced August 2018.

Comments: 19 pages, 18 figures. Topical Review Article. Please sent a mail, if you have any comments or suggestions

Journal ref: J. Phys. D: Appl. Phys. 52, 133001 (2019)

Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias

Authors: Orestis Manos, Panagiota Bougiatioti, Denis Dyck, Torsten Huebner, Karsten Rott, Jan-Michael Schmalhorst, Günter Reiss

Abstract: We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel magnetoresistance ratio, in a series of perpendicular magnetic tunnel junctions of materials sequence Ta/Pd/IrMn/CoFe/Ta$(\textit{x})$/CoFeB/MgO$(\textit{y})$/CoFeB… ▽ More We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel magnetoresistance ratio, in a series of perpendicular magnetic tunnel junctions of materials sequence Ta/Pd/IrMn/CoFe/Ta$(\textit{x})$/CoFeB/MgO$(\textit{y})$/CoFeB$(\textit{z})$/Ta/Pd. We obtain a large perpendicular exchange bias of 79.6$\,$kA/m for $x=0.3\,$nm. For stacks with $z=1.05\,$nm, the magnetic properties of the soft electrode resemble the characteristics of superparamagnetism. For stacks with $x=0.4\,$nm, $y=2\,$nm, and $z=1.20\,$nm, the exchange bias presents a significant decrease at post annealing temperature $T_\textrm{ann}=330\,^{\circ}$C for 60 min, while the interlayer exchange coupling and the saturation magnetization per unit area sharply decay at $T_\textrm{ann}=340\,^{\circ}$C for 60 min. Simultaneously, the tunnel magnetoresistance ratio shows a peak of $65.5\%$ after being annealed at $T_\textrm{ann}=300\,^{\circ}$C for 60 min, with a significant reduction down to $10\%$ for higher annealing temperatures ($T_\textrm{ann}\geq330\,^{\circ}$C) and down to $14\%$ for longer annealing times ($T_\textrm{ann}=300\,^{\circ}$C for 90 min). We attribute the large decrease of tunnel magnetoresistance ratio to the loss of exchange bias in the pinned electrode. △ Less

Submitted 5 October, 2018; v1 submitted 22 February, 2018; originally announced February 2018.

Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling

Authors: Torsten Huebner, Ulrike Martens, Jakob Walowski, Markus Münzenberg, Andy Thomas, Günter Reiss, Timo Kuschel

Abstract: In general, it is difficult to access the thermal conductivity of thin insulating films experimentally just by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl… ▽ More In general, it is difficult to access the thermal conductivity of thin insulating films experimentally just by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl$_2$O$_4$ (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO ($0.7$ W/(K$\cdot$m)) and MgO ($5.8$ W/(K$\cdot$m)), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films. △ Less

Submitted 7 February, 2018; v1 submitted 6 February, 2018; originally announced February 2018.

Journal ref: J. Phys. D: Appl. Phys. 51, 224006 (2018)

Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias

Authors: Orestis Manos, Alexander Böhnke, Panagiota Bougiatioti, Robin Klett, Karsten Rott, Alessia Niesen, Jan-Michael Schmalhorst, Günter Reiss

Abstract: Recently, magnetic tunnel junctions with perpendicular magnetized electrodes combined with exchange bias films have attracted large interest. In this paper we examine the tunnel magnetoresistance of Ta/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/cap**/Pd magnetic tunnel junctions in dependence on the cap** layer, i.e., Hf or Ta. In these stacks perpendicular exchange bias fields of -500\,Oe along wit… ▽ More Recently, magnetic tunnel junctions with perpendicular magnetized electrodes combined with exchange bias films have attracted large interest. In this paper we examine the tunnel magnetoresistance of Ta/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/cap**/Pd magnetic tunnel junctions in dependence on the cap** layer, i.e., Hf or Ta. In these stacks perpendicular exchange bias fields of -500\,Oe along with perpendicular magnetic anisotropy are combined. A tunnel magnetoresistance of $(47.2\pm 1.4)\%$ for the Hf-capped sample was determined compared to the Ta one $(42.6\pm 0.7)\%$ at room temperature. Interestingly, this observation is correlated to the higher boron absorption of Hf compared to Ta which prevents the suppression of $Δ_{\textrm{1}}$ channel and leads to higher tunnel magnetoresistance values. Furthermore, the temperature dependent coercivities of the soft electrodes of both samples are mainly described by the Stoner-Wohlfarth model including thermal fluctuations. Slight deviations at low temperatures can be attributed to a torque on the soft electrode that is generated by the pinned magnetic layer system. △ Less

Submitted 8 September, 2017; originally announced September 2017.

Electrical transport and optical band gap of NiFe$_\textrm{2}$O$_\textrm{x}$ thin films

Authors: Panagiota Bougiatioti, Orestis Manos, Christoph Klewe, Daniel Meier, Niclas Teichert, Jan-Michael Schmalhorst, Timo Kuschel, Günter Reiss

Abstract: We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen deficiency leads to controllable electrical and optical properties which would be beneficial for the investigations of the transport phenomena and would, therefore,… ▽ More We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen deficiency leads to controllable electrical and optical properties which would be beneficial for the investigations of the transport phenomena and would, therefore, promote the use of such materials in spintronic and spin caloritronic applications. We used several characterization techniques in order to investigate the film properties, focusing on their structural, magnetic, electrical, and optical properties. From the electrical resistivity measurements we obtained the conduction mechanisms that govern the systems in high and low temperature regimes, extracting low thermal activation energies which unveil extrinsic transport mechanisms. The thermal activation energy decreases in the less oxidized samples revealing the pronounced contribution of a large amount of electronic states localized in the band gap to the electrical conductivity. Hall effect measurements showed the mixed-type semiconducting character of our films. The optical band gaps were determined via ultraviolet-visible spectroscopy. They follow a similar trend as the thermal activation energy, with lower band gap values in the less oxidized samples. △ Less

Submitted 6 August, 2017; originally announced August 2017.

Journal ref: J. Appl. Phys. 122, 225101 (2017)

Evolution of the interfacial perpendicular magnetic anisotropy constant of the Co$_2$FeAl/MgO interface upon annealing

Authors: Andres Conca, Alessia Niesen, Günter Reiss, Burkard Hillebrands

Abstract: We investigate thickness series of films of the Heusler alloy Co$_2$FeAl in order to study the effect of annealing on the interface with a MgO layer and on the bulk magnetic properties. Our results reveal that while the perpendicular interface anisotropy constant $K^{\perp}_{\rm S}$ is zero for the as-deposited samples, its value increases with annealing up to a value of $1.14\, \pm \,0.07$~mJ/m… ▽ More We investigate thickness series of films of the Heusler alloy Co$_2$FeAl in order to study the effect of annealing on the interface with a MgO layer and on the bulk magnetic properties. Our results reveal that while the perpendicular interface anisotropy constant $K^{\perp}_{\rm S}$ is zero for the as-deposited samples, its value increases with annealing up to a value of $1.14\, \pm \,0.07$~mJ/m$^2$ for the series annealed at 320$^{\rm o}$C and of $2.07\, \pm \,0.7$~mJ/m$^2$ for the 450$^{\rm o}$C annealed series owing to a strong modification of the interface during the thermal treatment. This large value ensures a stabilization of a perpendicular magnetization orientation for a thickness below 1.7~nm. The data additionally shows that the in-plane biaxial anisotropy constant has a different evolution with thickness in as-deposited and annealed systems. The Gilbert dam** parameter $α$ shows minima for all series for a thickness of 40~nm and an absolute minimum value of $2.8\pm0.1\cdot10^{-3}$. The thickness dependence is explained in terms of an inhomogenous magnetization state generated by the interplay between the different anisotropies of the system and by crystalline disorder. △ Less

Submitted 23 January, 2018; v1 submitted 3 August, 2017; originally announced August 2017.

Comments: 6 pages, 5 figures

Large magneto-Seebeck effect in magnetic tunnel junctions with half-metallic Heusler electrodes

Authors: Alexander Boehnke, Ulrike Martens, Christian Sterwerf, Alessia Niesen, Torsten Huebner, Marvin von der Ehe, Markus Meinert, Timo Kuschel, Andy Thomas, Christian Heiliger, Markus Münzenberg, Günter Reiss

Abstract: Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted heat in electronic devices useable or to provide new read-out mechanisms for information. However, only few materials have been studied so far with Seebeck volt… ▽ More Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted heat in electronic devices useable or to provide new read-out mechanisms for information. However, only few materials have been studied so far with Seebeck voltages of only some μV, which hampers applications. Here, we demonstrate that half-metallic Heusler compounds are hot candidates for enhancing spin-dependent thermoelectric effects. This becomes evident when considering the asymmetry of the spin-split density of electronic states around the Fermi level that determines the spin-dependent thermoelectric transport in magnetic tunnel junctions. We identify Co$_2$FeAl and Co$_2$FeSi Heusler compounds as ideal due to their energy gaps in the minority density of states, and demonstrate devices with substantially larger Seebeck voltages and tunnel magneto-Seebeck effect ratios than the commonly used Co-Fe-B based junctions. △ Less

Submitted 20 November, 2017; v1 submitted 3 July, 2017; originally announced July 2017.

Comments: 9 pages, 4 figures

Journal ref: Nat. Commun. 8, 1626 (2017)

Proximity-induced superconductivity and quantum interference in topological crystalline insulator SnTe thin film devices

Authors: Robin-Pierre Klett, Joachim Schönle, Andreas Becker, Denis Dyck, Karsten Rott, Jan Haskenhoff, Jan Krieft, Torsten Hübner, Oliver Reimer, Chandra Shekhar, Jan-Michael Schmalhorst, Andreas Hütten, Claudia Felser, Wolfgang Wernsdorfer, Günter Reiss

Abstract: Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and thus to host Majorana physics. We repo… ▽ More Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and thus to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak antilocalization and the weak links of the SQUID fully-gapped proximity induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2$π$ periodicity, possibly dominated by the bulk conductivity. △ Less

Submitted 30 June, 2017; originally announced June 2017.

Enhancement of thermovoltage and tunnel magneto-Seebeck effect in CoFeB based magnetic tunnel junctions by variation of the MgAl$_2$O$_4$ and MgO barrier thickness

Authors: Torsten Huebner, Ulrike Martens, Jakob Walowski, Alexander Boehnke, Jan Krieft, Christian Heiliger, Andy Thomas, Günter Reiss, Timo Kuschel, Markus Münzenberg

Abstract: We investigate the influence of the barrier thickness of Co$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-induced tunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm, we find a distinct maximum in the tunnel magneto-Seebeck effect for 2.6nm barrier thickness. This maximum is independently measured for two barrier materials, namely MgAl$_2$O$_4$ and M… ▽ More We investigate the influence of the barrier thickness of Co$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-induced tunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm, we find a distinct maximum in the tunnel magneto-Seebeck effect for 2.6nm barrier thickness. This maximum is independently measured for two barrier materials, namely MgAl$_2$O$_4$ and MgO. Additionally, samples with an MgAl$_2$O$_4$ barrier exhibit a high thermovoltage of more than 350$μ$V in comparison to 90$μ$V for the MTJs with MgO barrier when heated with the maximum laser power of 150mW. Our results allow for the fabrication of improved stacks when dealing with temperature differences across magnetic tunnel junctions for future applications in spin caloritronics, the emerging research field that combines spintronics and themoelectrics. △ Less

Submitted 26 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 214435 (2017)

Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices

Authors: Jan Balluff, Teodor Huminiuc, Markus Meinert, Atsufumi Hirohata, Günter Reiss

Abstract: We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by… ▽ More We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by X-ray diffraction and reflection, as well as atomic force and high-resolution transmission electron microscopy. We find an excellent crystal growth quality with low interface roughnesses of 1-3 Å, which is crucial for the preparation of working tunnelling barriers. Using Fe as a ferromagnetic electrode material we prepared magnetic tunneling junctions and measured the magnetoresistance. We find a sizeable maximum magnetoresistance value of 135%, which is comparable to other common Fe based MTJ systems. △ Less

Submitted 23 May, 2017; originally announced May 2017.

Comments: 5 pages, 5 figures

Quantitative analysis of the influence of keV He ion bombardment on exchange bias layer systems

Authors: Nicolas David Müglich, Gerhard Götz, Alexander Gaul, Markus Meyl, Günter Reiss, Timo Kuschel, Arno Ehresmann

Abstract: The mechanism of ion bombardment induced magnetic patterning of exchange bias layer systems for creating engineered magnetic stray field landscapes is still unclear. We compare results from vectorial magneto-optic Kerr effect measurements to a recently proposed model with time dependent rotatable magnetic anisotropy. Results show massive reduction of rotational magnetic anisotropy compared to all… ▽ More The mechanism of ion bombardment induced magnetic patterning of exchange bias layer systems for creating engineered magnetic stray field landscapes is still unclear. We compare results from vectorial magneto-optic Kerr effect measurements to a recently proposed model with time dependent rotatable magnetic anisotropy. Results show massive reduction of rotational magnetic anisotropy compared to all other magnetic anisotropies. We disprove the assumption of comparable weakening of all magnetic anisotropies and show that ion bombardment mainly influences smaller grains in the antiferromagnet. △ Less

Submitted 18 April, 2017; originally announced April 2017.

Comments: 5 figures

Journal ref: New J. Phys. 20, 053018 (2018)

Quantitative disentanglement of spin Seebeck, proximity-induced and intrinsic anomalous Nernst effect in NM/FM bilayers

Authors: Panagiota Bougiatioti, Christoph Klewe, Daniel Meier, Orestis Manos, Olga Kuschel, Joachim Wollschläger, Laurence Bouchenoire, Simon D. Brown, Jan-Michael Schmalhorst, Günter Reiss, Timo Kuschel

Abstract: We identify and investigate thermal spin transport phenomena in sputter-deposited Pt/NiFe$_2$O$_{\textrm{4-x}}$ ($4\geq x \geq 0$) bilayers. We separate the voltage generated by the spin Seebeck effect from the anomalous Nernst effect contributions and even disentangle the intrinsic anomalous Nernst effect (ANE) in the ferromagnet (FM) from the ANE produced by the Pt that is spin polarized due to… ▽ More We identify and investigate thermal spin transport phenomena in sputter-deposited Pt/NiFe$_2$O$_{\textrm{4-x}}$ ($4\geq x \geq 0$) bilayers. We separate the voltage generated by the spin Seebeck effect from the anomalous Nernst effect contributions and even disentangle the intrinsic anomalous Nernst effect (ANE) in the ferromagnet (FM) from the ANE produced by the Pt that is spin polarized due to its proximity to the FM. Further, we probe the dependence of these effects on the electrical conductivity and the band gap energy of the FM film varying from nearly insulating NiFe$_2$O$_4$ to metallic Ni$_{33}$Fe$_{67}$. A proximity-induced ANE could only be identified in the metallic Pt/Ni$_{33}$Fe$_{67}$ bilayer in contrast to Pt/NiFe$_2$O$_{\rm x}$ ($x>0$) samples. This is verified by the investigation of static magnetic proximity effects via x-ray resonant magnetic reflectivity. △ Less

Submitted 16 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. Lett. 119, 227205 (2017)

Pum** laser excited spins through MgO barriers

Authors: Ulrike Martens, Jakob Walowski, Thomas Schumann, Maria Mansurova, Alexander Boehnke, Torsten Huebner, Günter Reiss, Andy Thomas, Markus Münzenberg

Abstract: We present a study of the tunnel magneto-Seebeck (TMS) effect in MgO based magnetic tunnel junctions (MTJs). The electrodes consist of CoFeB with in-plane magnetic anisotropy. The temperature gradients which generate a voltage across the MTJs layer stack are created using laser heating. Using this method, the temperature can be controlled on the micrometer length scale: here, we investigate, how b… ▽ More We present a study of the tunnel magneto-Seebeck (TMS) effect in MgO based magnetic tunnel junctions (MTJs). The electrodes consist of CoFeB with in-plane magnetic anisotropy. The temperature gradients which generate a voltage across the MTJs layer stack are created using laser heating. Using this method, the temperature can be controlled on the micrometer length scale: here, we investigate, how both, the TMS voltage and the TMS effect, depend on the size, position and intensity of the applied laser spot. For this study, a large variety of different temperature distributions was created across the junction. We recorded two-dimensional maps of voltages generated by heating in dependence of the laser spot position and the corresponding calculated TMS values. The voltages change in value and sign, from large positive values when heating the MTJ directly in the centre to small values when heating the junction on the edges and even small negative values when heating the sample away from the junction. Those zero crossings lead to very high calculated TMS ratios. Our systematic analysis shows, that the distribution of the temperature gradient is essential, to achieve high voltage signals and reasonable resulting TMS ratios. Furthermore, artefacts on the edges produce misleading results, but also open up further possibilities of more complex heating scenarios for spincaloritronics in spintronic devices. △ Less

Submitted 16 February, 2017; originally announced February 2017.

Comments: 12 pages, 6 figures

Longitudinal spin Seebeck coefficient: heat flux vs. temperature difference method

Authors: A. Sola, P. Bougiatioti, M. Kuepferling, D. Meier, G. Reiss, M. Pasquale, T. Kuschel, V. Basso

Abstract: The determination of the longitudinal spin Seebeck effect (LSSE) coefficient is currently plagued by a large uncertainty due to the poor reproducibility of the experimental conditions used in its measurement. In this work we present a detailed analysis of two different methods used for the determination of the LSSE coefficient. We have performed LSSE experiments in different laboratories, by using… ▽ More The determination of the longitudinal spin Seebeck effect (LSSE) coefficient is currently plagued by a large uncertainty due to the poor reproducibility of the experimental conditions used in its measurement. In this work we present a detailed analysis of two different methods used for the determination of the LSSE coefficient. We have performed LSSE experiments in different laboratories, by using different setups and employing both the temperature difference method and the heat flux method. We found that the lack of reproducibility can be mainly attributed to the thermal contact resistance between the sample and the thermal baths which generate the temperature gradient. Due to the variation of the thermal resistance, we found that the scaling of the LSSE voltage to the heat flux through the sample rather than to the temperature difference across the sample greatly reduces the uncertainty. The characteristics of a single YIG/Pt LSSE device obtained with two different setups was $(1.143\pm0.007)\cdot 10^{-7}$ Vm/W and $(1.101\pm0.015)\cdot 10^{-7}$ Vm/W with the heat flux method and $(2.313\pm0.017)\cdot 10^{-7}$ V/K and $(4.956\pm0.005)\cdot 10^{-7}$ V/K with the temperature difference method. This shows that systematic errors can be considerably reduced with the heat flux method. △ Less

Submitted 10 November, 2018; v1 submitted 12 January, 2017; originally announced January 2017.

Comments: PDFLaTeX, 10 pages, 6 figures

Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films

Authors: J. Shan, P. Bougiatioti, L. Liang, G. Reiss, T. Kuschel, B. J. van Wees

Abstract: We report magnon spin transport in nickel ferrite (NiFe$_2$O$_4$, NFO)/ platinum (Pt) bilayer systems at room temperature. A nonlocal geometry is employed, where the magnons are excited by the spin Hall effect or by the Joule heating induced spin Seebeck effect at the Pt injector, and detected at a certain distance away by the inverse spin Hall effect at the Pt detector. The dependence of the nonl… ▽ More We report magnon spin transport in nickel ferrite (NiFe$_2$O$_4$, NFO)/ platinum (Pt) bilayer systems at room temperature. A nonlocal geometry is employed, where the magnons are excited by the spin Hall effect or by the Joule heating induced spin Seebeck effect at the Pt injector, and detected at a certain distance away by the inverse spin Hall effect at the Pt detector. The dependence of the nonlocal magnon spin signals as a function of the magnetic field is closely related to the NFO magnetization behavior. In contrast, we observe that the magnetoresistance measured locally at the Pt injector does not show a clear relation with the average NFO magnetization. We estimate the magnon spin relaxation length to be 3.1 $\pm$ 0.2 $μ$m in the investigated NFO samples. △ Less

Submitted 13 April, 2017; v1 submitted 8 January, 2017; originally announced January 2017.

Comments: 6 pages, 4 figures

Journal ref: Appl. Phys. Lett. 110, 132406 (2017)

Co-sputtered PtMnSb thin films and PtMnSb/Pt bilayers for spin-orbit torque investigations

Authors: Jan Krieft, Johannes Mendil, Myriam H. Aguirre, Can O. Avci, Christoph Klewe, Karsten Rott, Jan-Michael Schmalhorst, Günter Reiss, Pietro Gambardella, Timo Kuschel

Abstract: The manipulation of the magnetization by spin-orbit torques (SOTs) has recently been extensively studied due to its potential for efficiently writing information in magnetic memories. Particular attention is paid to non-centrosymmetric systems with space inversion asymmetry, where SOTs emerge even in single-layer materials. The half-metallic half-Heusler PtMnSb is an interesting candidate for stud… ▽ More The manipulation of the magnetization by spin-orbit torques (SOTs) has recently been extensively studied due to its potential for efficiently writing information in magnetic memories. Particular attention is paid to non-centrosymmetric systems with space inversion asymmetry, where SOTs emerge even in single-layer materials. The half-metallic half-Heusler PtMnSb is an interesting candidate for studies of this intrinsic SOT. Here, we report on the growth and epitaxial properties of PtMnSb thin films and PtMnSb/Pt bilayers deposited on MgO(001) substrates by dc magnetron co-sputtering at high temperature in ultra-high vacuum. The film properties were investigated by x-ray diffraction, x-ray reflectivity, atomic force microscopy, and electron microscopy. Thin PtMnSb films present a monocrystalline C1b phase with (001) orientation, coexisting at increasing thickness with a polycrystalline phase with (111) texture. Films thinner than about 5 nm grow in islands, whereas thicker films grow layer-by-layer, forming a perfect MgO/PtMnSb interface. The thin PtMnSb/Pt bilayers also show island growth and a defective transition zone, while thicker films grow layer-by-layer and Pt grows epitaxially on the half-Heusler compound without significant interdiffusion. △ Less

Submitted 22 December, 2016; originally announced December 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Status Solidi (Rapid Res. Lett.) 11, 1600439 (2017)

Quantitative separation of the anisotropic magnetothermopower and planar Nernst effect by the rotation of an in-plane thermal gradient

Authors: Oliver Reimer, Daniel Meier, Michel Bovender, Lars Helmich, Jan-Oliver Dreessen, Jan Krieft, Anatoly S. Shestakov, Christian H. Back, Jan-Michael Schmalhorst, Andreas Hütten, Günter Reiss, Timo Kuschel

Abstract: A thermal gradient as the driving force for spin currents plays a key role in spin caloritronics. In this field the spin Seebeck effect (SSE) is of major interest and was investigated in terms of in-plane thermal gradients inducing perpendicular spin currents (transverse SSE) and out-of-plane thermal gradients generating parallel spin currents (longitudinal SSE). Up to now all spincaloric experime… ▽ More A thermal gradient as the driving force for spin currents plays a key role in spin caloritronics. In this field the spin Seebeck effect (SSE) is of major interest and was investigated in terms of in-plane thermal gradients inducing perpendicular spin currents (transverse SSE) and out-of-plane thermal gradients generating parallel spin currents (longitudinal SSE). Up to now all spincaloric experiments employ a spatially fixed thermal gradient. Thus anisotropic measurements with respect to well defined crystallographic directions were not possible. Here we introduce a new experiment that allows not only the in-plane rotation of the external magnetic field, but also the rotation of an in-plane thermal gradient controlled by optical temperature detection. As a consequence, the anisotropic magnetothermopower and the planar Nernst effect in a permalloy thin film can be measured simultaneously and reveal a phase shift, that allows the quantitative separation of the thermopower, the anisotropic magnetothermopower and the planar Nernst effect. △ Less

Submitted 28 September, 2016; originally announced September 2016.

Comments: Main Manuscript: 9 pages, 9 figures; Supplementary Informations: 9 pages, 8 figures

Journal ref: Sci. Rep. 7, 40586 (2017)

Temperature dependence of the spin Hall angle and switching current in the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy

Authors: Lukas Neumann, Daniel Meier, Jan Schmalhorst, Karsten Rott, Günter Reiss, Markus Meinert

Abstract: We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle $|Θ_\mathrm{SH}| \approx 0.22$ is independent of temperature, whereas the switching current increases strongly at low temperature. We show that the nc-W(O) is insensitive to annealing. It… ▽ More We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle $|Θ_\mathrm{SH}| \approx 0.22$ is independent of temperature, whereas the switching current increases strongly at low temperature. We show that the nc-W(O) is insensitive to annealing. It thus can be a good choice for the integration of spin Hall driven writing of information in magnetic memory or logic devices that require a high-temperature annealing process during fabrication. △ Less

Submitted 8 August, 2016; originally announced August 2016.

Comments: 4 pages, 4 figures

Low Gilbert dam** in Co2FeSi and Fe2CoSi films

Authors: Christian Sterwerf, Soumalya Paul, Behrouz Khodadadi, Markus Meinert, Jan-Michael Schmalhorst, Mathias Buchmeier, Claudia K. A. Mewes, Tim Mewes, Günter Reiss

Abstract: Thin highly textured Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si ($0 \leq$ x $\leq 1$) films were prepared on MgO (001) substrates by magnetron co-sputtering. The magneto-optic Kerr effect (MOKE) and ferromagnetic resonance (FMR) measurements were used to investigate the composition dependence of the magnetization, the magnetic anisotropy, the gyromagnetic ratio and the relaxation of the films. The e… ▽ More Thin highly textured Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si ($0 \leq$ x $\leq 1$) films were prepared on MgO (001) substrates by magnetron co-sputtering. The magneto-optic Kerr effect (MOKE) and ferromagnetic resonance (FMR) measurements were used to investigate the composition dependence of the magnetization, the magnetic anisotropy, the gyromagnetic ratio and the relaxation of the films. The effective magnetization for the thin Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si films, determined by FMR measurements, are consistent with the Slater Pauling prediction. Both MOKE and FMR measurements reveal a pronounced fourfold anisotropy distribution for all films. In addition we found a strong influence of the stoichiometry on the anisotropy as the cubic anisotropy strongly increases with increasing Fe concentration. The gyromagnetic ratio is only weakly dependent on the composition. We find low Gilbert dam** parameters for all films with values down to $0.0012\pm0.00012$ for Fe$_{1.75}$Co$_{1.25}$Si. The effective dam** parameter for Co$_2$FeSi is found to be $0.0018\pm 0.0004$. We also find a pronounced anisotropic relaxation, which indicates significant contributions of two-magnon scattering processes that is strongest along the easy axes of the films. This makes thin Fe$_{\mathrm{1+x}}$Co$_{\mathrm{2-x}}$Si films ideal materials for the application in STT-MRAM devices. △ Less

Submitted 22 May, 2016; originally announced May 2016.

Grain size correlated rotatable magnetic anisotropy in polycrystalline exchange bias systems

Authors: Nicolas David Müglich, Gerhard Götz, Alexander Gaul, Markus Meyl, Günter Reiss, Timo Kuschel, Arno Ehresmann

Abstract: Angular resolved measurements of the exchange bias field and the coercive field are a powerful tool to distinguish between different competing magnetic anisotropies in polycrystalline exchange bias layer systems. No simple analytical model is as yet available, which considers time dependent effects like enhanced coercivity arising from the grain size distribution of the antiferromagnet. In this wo… ▽ More Angular resolved measurements of the exchange bias field and the coercive field are a powerful tool to distinguish between different competing magnetic anisotropies in polycrystalline exchange bias layer systems. No simple analytical model is as yet available, which considers time dependent effects like enhanced coercivity arising from the grain size distribution of the antiferromagnet. In this work we expand an existing model class describing polycrystalline exchange bias systems by a rotatable magnetic anisotropy term to describe grain size correlated effects. Additionally, we performed angular resolved magnetization curve measurements using vectorial magnetooptic Kerr magnetometry. Comparison of the experimental data with the proposed model shows excellent agreement and reveals the ferromagnetic anisotropy and properties connected to the grain size distribution of the antiferromagnet. Therefore, a distinction between the different influences on coercivity and anisotropy becomes available. △ Less

Submitted 27 May, 2016; v1 submitted 10 May, 2016; originally announced May 2016.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. B 94, 184407 (2016)

Comparison of laser induced and intrinsic tunnel magneto-Seebeck effect in CoFeB/MgAl$_2$O$_4$ and CoFeB/MgO magnetic tunnel junctions

Authors: Torsten Huebner, Alexander Boehnke, Ulrike Martens, Andy Thomas, Jan-Michael Schmalhorst, Günter Reiss, Markus Münzenberg, Timo Kuschel

Abstract: We present a comparison of the tunnel magneto-Seebeck effect for laser induced and intrinsic heating. Therefore, Co$_{40}$Fe$_{40}$B$_{20}$/MgAl$_2$O$_4$ and Co$_{25}$Fe$_{55}$B$_{20}$/MgO magnetic tunnel junctions have been prepared. The TMS ratio of 3\,\% in case of the MAO MTJ agrees well with ratios found for other barrier materials, while the TMS ratio of 23\,\% of the MgO MTJ emphasizes the… ▽ More We present a comparison of the tunnel magneto-Seebeck effect for laser induced and intrinsic heating. Therefore, Co$_{40}$Fe$_{40}$B$_{20}$/MgAl$_2$O$_4$ and Co$_{25}$Fe$_{55}$B$_{20}$/MgO magnetic tunnel junctions have been prepared. The TMS ratio of 3\,\% in case of the MAO MTJ agrees well with ratios found for other barrier materials, while the TMS ratio of 23\,\% of the MgO MTJ emphasizes the influence of the CoFe composition. We find results using the intrinsic method that differ in sign and magnitude in comparison to the results of the laser heating. The intrinsic contributions can alternatively be explained by the Brinkman model and the given junction properties. Especially, we are able to demonstrate that the symmetric contribution is solely influenced by the barrier asymmetry. Thus, we conclude that the symmetry analysis used for the intrinsic method is not suitable to unambiguously identify an intrinsic tunnel magneto-Seebeck effect. △ Less

Submitted 1 July, 2016; v1 submitted 26 April, 2016; originally announced April 2016.

Journal ref: Phys. Rev. B 93, 224433 (2016)

Static Magnetic Proximity Effect in Pt Layers on Sputter-Deposited NiFe2O4 and on Fe of Various Thicknesses Investigated by XRMR

Authors: Timo Kuschel, Christoph Klewe, Panagiota Bougiatioti, Olga Kuschel, Joachim Wollschläger, Laurence Bouchenoire, Simon D. Brown, Jan-Michael Schmalhorst, Daniel Meier, Günter Reiss

Abstract: The longitudinal spin Seebeck effect is detected in sputter-deposited NiFe2O4 films using Pt as a spin detector and compared to previously investigated NiFe2O4 films prepared by chemical vapor deposition. Anomalous Nernst effects induced by the magnetic proximity effect in Pt can be excluded for the sputter-deposited NiFe2O4 films down to a certain limit, since x-ray resonant magnetic reflectivity… ▽ More The longitudinal spin Seebeck effect is detected in sputter-deposited NiFe2O4 films using Pt as a spin detector and compared to previously investigated NiFe2O4 films prepared by chemical vapor deposition. Anomalous Nernst effects induced by the magnetic proximity effect in Pt can be excluded for the sputter-deposited NiFe2O4 films down to a certain limit, since x-ray resonant magnetic reflectivity measurements show no magnetic response down to a limit of 0.04 μB per Pt atom comparable to the case of the chemicallydeposited NiFe2O4 films. These differently prepared films have various thicknesses. Therefore, we further studied Pt/Fe reference samples with various Fe thicknesses and could confirm that the magnetic proximity effect is only induced by the interface properties of the magnetic material. △ Less

Submitted 25 February, 2016; originally announced February 2016.

Comments: 4 pages, 4 figures

Journal ref: IEEE Trans. Magn. 52, 4500104 (2016)

Electronic and magnetic structure of epitaxial NiO/Fe$_3$O$_4$(001) heterostructures grown on MgO(001) and Nb-doped SrTiO$_3$(001)

Authors: K. Kuepper, O. Kuschel, N. Pathé, T. Schemme, J. Schmalhorst, A. Thomas, E. Arenholz M. Gorgoi, R. Ovsyannikov, S. Bartkowski, G. Reiss, J. Wollschläger

Abstract: We study the underlying chemical, electronic and magnetic properties of a number of magnetite based thin films. The main focus is placed onto NiO/Fe$_3$O$_4$(001) bilayers grown on MgO(001) and Nb-SrTiO$_3$(001) substrates. We compare the results with those obtained on pure Fe$_3$O$_4$(001) thin films. It is found that the magnetite layers are oxidized and Fe$^{3+}$ dominates at the surfaces due t… ▽ More We study the underlying chemical, electronic and magnetic properties of a number of magnetite based thin films. The main focus is placed onto NiO/Fe$_3$O$_4$(001) bilayers grown on MgO(001) and Nb-SrTiO$_3$(001) substrates. We compare the results with those obtained on pure Fe$_3$O$_4$(001) thin films. It is found that the magnetite layers are oxidized and Fe$^{3+}$ dominates at the surfaces due to maghemite ($γ$-Fe$_2$O$_3$) formation, which decreases with increasing magnetite layer thickness. From a layer thickness of around 20 nm on the cationic distribution is close to that of stoichiometric Fe$_3$O$_4$. At the interface between NiO and Fe$_3$O$_4$ we find the Ni to be in a divalent valence state, with unambiguous spectral features in the Ni 2p core level x-ray photoelectron spectra typical for NiO. The formation of a significant NiFe$_2$O$_4$ interlayer can be excluded by means of XMCD. Magneto optical Kerr effect measurements reveal significant higher coercive fields compared to magnetite thin films grown on MgO(001), and a 45$^{\circ}$ rotated magnetic easy axis. We discuss the spin magnetic moments of the magnetite layers and find that the moment increases with increasing thin film thickness. At low thickness the NiO/Fe$_3$O$_4$ films grown on Nb-SrTiO$_3$ exhibits a significantly decreased spin magnetic moments. A thickness of 20 nm or above leads to spin magnetic moments close to that of bulk magnetite. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. B 94, 024401 (2016)

Detection of DC currents and resistance measurements in longitudinal spin Seebeck effect experiments on Pt/YIG and Pt/NFO

Authors: Daniel Meier, Timo Kuschel, Sibylle Meyer, Sebastian T. B. Goennenwein, Liming Shen, Arunava Gupta, Jan-Michael Schmalhorst, Günter Reiss

Abstract: In this work we investigated thin films of the ferrimagnetic insulators YIG and NFO capped with thin Pt layers in terms of the longitudinal spin Seebeck effect (LSSE). The electric response detected in the Pt layer under an out-of-plane temperature gradient can be interpreted as a pure spin current converted into a charge current via the inverse spin Hall effect. Typically, the transverse voltage… ▽ More In this work we investigated thin films of the ferrimagnetic insulators YIG and NFO capped with thin Pt layers in terms of the longitudinal spin Seebeck effect (LSSE). The electric response detected in the Pt layer under an out-of-plane temperature gradient can be interpreted as a pure spin current converted into a charge current via the inverse spin Hall effect. Typically, the transverse voltage is the quantity investigated in LSSE measurements (in the range of μV). Here, we present the directly detected DC current (in the range of nA) as an alternative quantity. Furthermore, we investigate the resistance of the Pt layer in the LSSE configuration. We found an influence of the test current on the resistance. The typical shape of the LSSE curve varies for increasing test currents. △ Less

Submitted 3 January, 2016; originally announced January 2016.

Comments: 4 pages, 2 figures

Journal ref: AIP Advances 6, 056302 (2016)

Room temperature exchange bias in BiFeO3 / Co-Fe bilayers

Authors: Christian Sterwerf, Markus Meinert, Elke Arenholz, Jan-Michael Schmalhorst, Günter Reiss

Abstract: Thin highly epitaxial BiFeO$_3$ films were prepared on SrTiO$_3$ (100) substrates by reactive magnetron co-sputtering. Detailed MOKE measurements on BiFeO$_3$/Co-Fe bilayers were performed to investigate the exchange bias as a function of the films thicknesses and Co-Fe stoichiometries. We found a maximum exchange bias of H$_{\mathrm{eb}}$=92 Oe and a coercive field of H$_{\mathrm{c}}$=89 Oe for a… ▽ More Thin highly epitaxial BiFeO$_3$ films were prepared on SrTiO$_3$ (100) substrates by reactive magnetron co-sputtering. Detailed MOKE measurements on BiFeO$_3$/Co-Fe bilayers were performed to investigate the exchange bias as a function of the films thicknesses and Co-Fe stoichiometries. We found a maximum exchange bias of H$_{\mathrm{eb}}$=92 Oe and a coercive field of H$_{\mathrm{c}}$=89 Oe for a 12.5 nm thick BiFeO$_3$ film with a 2 nm thick Co layer. The unidirectional anisotropy is clearly visible in in-plane rotational MOKE measurements. AMR measurements reveal a strongly increasing coercivity with decreasing temperature, but no significant change in the exchange bias field. △ Less

Submitted 26 December, 2015; v1 submitted 18 December, 2015; originally announced December 2015.

Structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga thin films

Authors: Alessia Niesen, Christian Sterwerf, Manuel Glas, Jan-Michael Schmalhorst, Günter Reiss

Abstract: We investigated structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga compounds. The crystallinity of the Mn-Fe-Ga thin films was confirmed using x-ray diffraction. X-ray reflection and atomic force microscopy measurements were utilized to investigate the surface properties, roughness, thickness and density of the deposited Mn-Fe-Ga. Depending on the stoichiometry, as well a… ▽ More We investigated structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga compounds. The crystallinity of the Mn-Fe-Ga thin films was confirmed using x-ray diffraction. X-ray reflection and atomic force microscopy measurements were utilized to investigate the surface properties, roughness, thickness and density of the deposited Mn-Fe-Ga. Depending on the stoichiometry, as well as the used substrates (SrTiO3 (001) and MgO (001)) or buffer layer (TiN) the Mn-Fe-Ga crystallizes in the cubic or the tetragonally distorted phase. Anomalous Hall effect and alternating gradient magnetometry measurements confirmed strong perpendicular magnetocrystalline anisotropy. Low saturation magnetization and hard magnetic behavior was reached by tuning the composition. Temperature dependent anomalous Hall effect measurements in a closed cycle He-cryostat showed a slight increase in coercivity with decreasing temperature (300K to 2K). TiN buffered Mn2.7Fe0.3Ga revealed sharper switching of the magnetization compared to the unbuffered layers. △ Less

Submitted 1 August, 2016; v1 submitted 6 November, 2015; originally announced November 2015.

Journal ref: IEEE Transactions on Magnetics, vol. 52, no. 7, pp. 1-4, July 2016

Titanium Nitride as a Seed Layer for Heusler Compounds

Authors: Alessia Niesen, Manuel Glas, Jana Ludwig, Roshnee Sahoo, Daniel Ebke, Elke Arenholz, Jan-Michael Schmalhorst, Günter Reiss

Abstract: Titanium nitride (TiN) shows low resistivity at room temperature, high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by X-ray diffraction and 4-terminal transport measurements. Element specific X-ray absorption spectroscopy revea… ▽ More Titanium nitride (TiN) shows low resistivity at room temperature, high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by X-ray diffraction and 4-terminal transport measurements. Element specific X-ray absorption spectroscopy revealed pure TiN in the bulk. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device (SQUID) and anomalous Hall effect (AHE) for Mn2.45Ga. Magneto optical Kerr effect (MOKE) measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature. △ Less

Submitted 28 January, 2016; v1 submitted 21 October, 2015; originally announced October 2015.

Journal ref: Journal of Applied Physics, 118, 243904 (2015)

Static magnetic proximity effect in Pt/Ni$_{1-x}$Fe$_x$ bilayers investigated by x-ray resonant magnetic reflectivity

Authors: Christoph Klewe, Timo Kuschel, Jan-Michael Schmalhorst, Florian Bertram, Olga Kuschel, Joachim Wollschläger, Jörg Strempfer, Markus Meinert, Günter Reiss

Abstract: We present x-ray resonant magnetic reflectivity (XRMR) as a very sensitive tool to detect proximity induced interface spin polarization in Pt/Fe, Pt/Ni$_{33}$Fe$_{67}$, Pt/Ni$_{81}$Fe$_{19}$ (permalloy), and Pt/Ni bilayers. We demonstrate that a detailed analysis of the reflected x-ray intensity gives insight in the spatial distribution of the spin polarization of a non-magnetic metal across the i… ▽ More We present x-ray resonant magnetic reflectivity (XRMR) as a very sensitive tool to detect proximity induced interface spin polarization in Pt/Fe, Pt/Ni$_{33}$Fe$_{67}$, Pt/Ni$_{81}$Fe$_{19}$ (permalloy), and Pt/Ni bilayers. We demonstrate that a detailed analysis of the reflected x-ray intensity gives insight in the spatial distribution of the spin polarization of a non-magnetic metal across the interface to a ferromagnetic layer. The evaluation of the experimental results with simulations based on optical data from ab initio calculations provides the induced magnetic moment per Pt atom in the spin polarized volume adjacent to the ferromagnet. We find the largest spin polarization in Pt/Fe and a much smaller magnetic proximity effect in Pt/Ni. Additional XRMR experiments with varying photon energy are in good agreement with the theoretical predictions for the energy dependence of the magnetooptic parameters and allow identifying the optical dispersion $δ$ and absorption $β$ across the Pt L3-absorption edge. △ Less

Submitted 3 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. B 93, 214440 (2016)

Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

Authors: Luca Marnitz, Karsten Rott, Stefan Niehörster, Christoph Klewe, Daniel Meier, Savio Fabretti, Matthäus Witziok, Andreas Krampf, Olga Kuschel, Tobias Schemme, Karsten Kuepper, Joachim Wollschläger, Andy Thomas, Günter Reiss, Timo Kuschel

Abstract: Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO… ▽ More Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe3O4 as the reason for the change of the TMR. Additionally, different treatments of the magnetite interface (argon bombardment, annealing at 200°C in oxygen atmosphere) during the preparation of the MTJs have been studied regarding their effect on the performance of the MTJs. A maximum TMR of up to -12% could be observed using both argon bombardment and annealing in oxygen atmosphere, despite exposing the magnetite surface to atmospheric conditions before the deposition of the MgO barrier. △ Less

Submitted 10 April, 2015; v1 submitted 23 December, 2014; originally announced December 2014.

Comments: 5 pages, 5 figures, 2 tables

Journal ref: AIP Advances 5, 047103 (2015)

Longitudinal spin Seebeck effect contribution in transverse spin Seebeck effect experiments in Pt/YIG and Pt/NFO

Authors: Daniel Meier, Daniel Reinhardt, Michael van Straaten, Christoph Klewe, Matthias Althammer, Michael Schreier, Sebastian T. B. Goennenwein, Arunava Gupta, Maximilian Schmid, Christian H. Back, Jan-Michael Schmalhorst, Timo Kuschel, Günter Reiss

Abstract: We investigate the inverse spin Hall voltage of a 10nm thin Pt strip deposited on the magnetic insulators Y3Fe5O12 (YIG) and NiFe2O4 (NFO) with a temperature gradient in the film plane. We observe characteristics typical of the spin Seebeck effect, although we do not observe a change of sign of the voltage at the Pt strip when it is moved from hot to cold side, which is believed to be the most str… ▽ More We investigate the inverse spin Hall voltage of a 10nm thin Pt strip deposited on the magnetic insulators Y3Fe5O12 (YIG) and NiFe2O4 (NFO) with a temperature gradient in the film plane. We observe characteristics typical of the spin Seebeck effect, although we do not observe a change of sign of the voltage at the Pt strip when it is moved from hot to cold side, which is believed to be the most striking feature of the transverse spin Seebeck effect. Therefore, we relate the observed voltages to the longitudinal spin Seebeck effect generated by a parasitic out-of-plane temperature gradient, which can be simulated by contact tips of different material and heat conductivities and by tip heating. This work gives new insights into the interpretation of transverse spin Seebeck effect experiments, which are still under discussion. △ Less

Submitted 25 November, 2014; originally announced November 2014.

Comments: 6 pages, 5 figures

Journal ref: Nature Commun. 6, 8211 (2015)

Towards wafer scale inductive characterization of spin transfer torque critical current density of magnetic tunnel junction stacks

Authors: Sibylle Sievers, Niklas Liebing, Santiago Serrano-Guisan, Ricardo Ferreira, Elvira Paz, Ambra Caprile, Alessandra Manzin, Massimo Pasquale, Witold Skowroński, Tomasz Stobiecki, Karsten Rott, Günter Reiss, Jürgen Langer, Berthold Ocker, Hans Werner Schumacher

Abstract: We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements magnetostatic parameters and the effective dam** are derived and $j^{c0}$ is calculated based on spin transfer torque equations. The inductive values compare well… ▽ More We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements magnetostatic parameters and the effective dam** are derived and $j^{c0}$ is calculated based on spin transfer torque equations. The inductive values compare well to the values derived from current induced switching measurements on individual nanopillars. Using a wafer scale inductive probe head could in the future enable wafer probe station based metrology of $j^{c0}$. △ Less

Submitted 18 November, 2014; originally announced November 2014.

Static magnetic proximity effect in Pt/NiFe2O4 and Pt/Fe bilayers investigated by x-ray resonant magnetic reflectivity

Authors: Timo Kuschel, Christoph Klewe, Jan-Michael Schmalhorst, Florian Bertram, Olga Schuckmann, Tobias Schemme, Joachim Wollschläger, Sonia Francoual, Jörg Strempfer, Arunava Gupta, Markus Meinert, Gerhard Götz, Daniel Meier, Günter Reiss

Abstract: The spin polarization of Pt in Pt/NiFe2O4 and Pt/Fe bilayers is studied by interface-sensitive x-ray resonant magnetic reflectivity to investigate static magnetic proximity effects. The asymmetry ratio of the reflectivity was measured at the Pt L3 absorption edge using circular polarized x-rays for opposite directions of the magnetization at room temperature. The results of the 2% asymmetry ratio… ▽ More The spin polarization of Pt in Pt/NiFe2O4 and Pt/Fe bilayers is studied by interface-sensitive x-ray resonant magnetic reflectivity to investigate static magnetic proximity effects. The asymmetry ratio of the reflectivity was measured at the Pt L3 absorption edge using circular polarized x-rays for opposite directions of the magnetization at room temperature. The results of the 2% asymmetry ratio for Pt/Fe bilayers are independent of the Pt thickness between 1.8 and 20 nm. By comparison with ab initio calculations, the maximum magnetic moment per spin polarized Pt atom at the interface is determined to be $(0.6\pm0.1)\,μ_{B}$ for Pt/Fe. For Pt/NiFe2O4 the asymmetry ratio drops below the sensitivity limit of $0.02\,μ_{B}$ per Pt atom. Therefore, we conclude, that the longitudinal spin Seebeck effect recently observed in Pt/NiFe2O4 is not influenced by a proximity induced anomalous Nernst effect. △ Less

Submitted 28 August, 2015; v1 submitted 1 November, 2014; originally announced November 2014.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 115, 097401 (2015)

Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$

Authors: Matthias Götte, Tomi Paananen, Günter Reiss, Thomas Dahm

Abstract: We theoretically investigate tunneling magnetoresistance (TMR) devices, which are probing the spin-momentum coupled nature of surface states of the three-dimensional topological insulator Bi$_{2}$Se$_{3}$. Theoretical calculations are performed based on a realistic tight-binding model for Bi$_{2}$Se$_{3}$. We study both three dimensional devices, which exploit the surface states of Bi$_{2}$Se… ▽ More We theoretically investigate tunneling magnetoresistance (TMR) devices, which are probing the spin-momentum coupled nature of surface states of the three-dimensional topological insulator Bi$_{2}$Se$_{3}$. Theoretical calculations are performed based on a realistic tight-binding model for Bi$_{2}$Se$_{3}$. We study both three dimensional devices, which exploit the surface states of Bi$_{2}$Se$_{3}$, as well as two-dimensional devices, which exploit the edge states of thin Bi$_{2}$Se$_{3}$ strips. We demonstrate that the material properties of Bi$_{2}$Se$_{3}$ allow a TMR ratio at room temperature of the order of 1000%. Analytical formulas are derived that allow a quick estimate of the achievable TMR ratio in these devices. The devices can be used to measure the spin polarization of the topological surface states as an alternative to spin-ARPES. Unlike TMR devices based on magnetic tunnel junctions the present devices avoid the use of a second ferromagnetic electrode whose magnetization needs to be pinned. △ Less

Submitted 24 September, 2014; v1 submitted 11 July, 2014; originally announced July 2014.

Comments: 11 pages, 10 figures, improved manuscript including a new device proposal and more detailed discussions

Journal ref: Phys. Rev. Applied 2, 054010 (2014)

Spin-transfer torque switching at ultra low current densities

Authors: Johannes Christian Leutenantsmeyer, Vladyslav Zbarsky, Steffen Wittrock, Marvin Walter, Patrick Peretzki, Henning Schuhmann, Andy Thomas, Karsten Rott, Guenter Reiss, Tae Hee Kim, Michael Seibt, Markus Muenzenberg

Abstract: The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of Boron into the tantalum buffer is considered to play an important role on the switching currents of those devices… ▽ More The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of Boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.2 kA/cm$^2$ is observed. As of today, this value is the lowest reported value for current-induced magnetization reversal. △ Less

Submitted 22 May, 2015; v1 submitted 16 May, 2014; originally announced May 2014.

On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect

Authors: Alexander Boehnke, Marius Milnikel, Marvin Walter, Vladyslav Zbarsky, Christian Franz, Michael Czerner, Karsten Rott, Andy Thomas, Christian Heiliger, Markus Münzenberg, Günter Reiss

Abstract: Thermoelectric effects in magnetic tunnel junctions are currently an attractive research topic. Here, we demonstrate that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic 1 state and off to 0 by simply changing the magnetic state of the CoFeB electrodes. We enable this new functionality of magnetic tunnel junctions by combining a thermal gra… ▽ More Thermoelectric effects in magnetic tunnel junctions are currently an attractive research topic. Here, we demonstrate that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic 1 state and off to 0 by simply changing the magnetic state of the CoFeB electrodes. We enable this new functionality of magnetic tunnel junctions by combining a thermal gradient and an electric field. This new technique unveils the bias-enhanced tunnel magneto-Seebeck effect, which can serve as the basis for logic devices or memories in a green information technology with a pure thermal write and read process. Furthermore, the thermally generated voltages that are referred to as the Seebeck effect are well known to sensitively depend on the electronic structure and therefore have been valued in solid-state physics for nearly one hundred years. Here, we lift Seebeck's historic discovery from 1821 to a new level of current spintronics. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance (TMR) and even completely suppressed for only one magnetic configuration, which is either parallel (P) or anti-parallel (AP). This option allows a readout contrast for the magnetic information of -3000% at room temperature while maintaining a large signal for one magnetic orientation. This contrast is much larger than the value that can be obtained using the TMR effect. Moreover, our measurements are a step towards the experimental realization of high TMS ratios, which are predicted for specific Co-Fe compositions. △ Less

Submitted 5 May, 2014; originally announced May 2014.

Experimental realization of a semiconducting full Heusler compound: Fe2TiSi

Authors: Markus Meinert, Manuel P. Geisler, Jan Schmalhorst, Ulrich Heinzmann, Elke Arenholz, Walid Hetaba, Michael Stöger-Pollach, Andreas Hütten, Günter Reiss

Abstract: Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to disor… ▽ More Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to disorder or off-stoichiometry. Density functional theory calculations of the electronic structure are in excellent agreement with electron energy loss, optical, and x-ray absorption experiments. Fe2TiSi may find applications as a thermoelectric material. △ Less

Submitted 24 February, 2014; originally announced February 2014.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 90, 085127 (2014)

Multiple phases in sputtered Cr2CoGa films

Authors: Manuel P. Geisler, Markus Meinert, Jan Schmalhorst, Günter Reiss, Elke Arenholz

Abstract: By magnetron co-sputtering, thin films of a nominal Cr2CoGa compound were deposited on MgO and MgAl2O4. To achieve crystallisation in the inverse Heusler structure, different heat treatments were tested. Instead of the inverse Heusler structure, we observed phase separation and precipitate formation in dependence on the heat treatment. The main precipitate is Cr3Ga in A15 structure. The remainder… ▽ More By magnetron co-sputtering, thin films of a nominal Cr2CoGa compound were deposited on MgO and MgAl2O4. To achieve crystallisation in the inverse Heusler structure, different heat treatments were tested. Instead of the inverse Heusler structure, we observed phase separation and precipitate formation in dependence on the heat treatment. The main precipitate is Cr3Ga in A15 structure. The remainder forms Co-rich CoGa in the B2 structure and possibly Cr-rich CoCr in the sigma-phase. △ Less

Submitted 9 February, 2014; v1 submitted 20 December, 2013; originally announced December 2013.

Comments: 4 pages, 4 figures

Journal ref: Journal of Alloys and Compounds 598, 213 (2014)

Physical characteristics and cation distribution of NiFe2O4 thin films with high resistivity prepared by reactive co-sputtering

Authors: Christoph Klewe, Markus Meinert, Alexander Boehnke, Karsten Kuepper, Elke Arenholz, Arunava Gupta, Jan-Michael Schmalhorst, Timo Kuschel, Guenter Reiss

Abstract: We fabricated NiFe2O thin films on MgAl2O4 (001) substrates by reactive dc magnetron co-sputtering in a pure oxygen atmosphere at different substrate temperatures. The film properties were investigated by various techniques with a focus on their structure, surface topography, magnetic characteristics, and transport properties. Structural analysis revealed a good crystallization with epitaxial grow… ▽ More We fabricated NiFe2O thin films on MgAl2O4 (001) substrates by reactive dc magnetron co-sputtering in a pure oxygen atmosphere at different substrate temperatures. The film properties were investigated by various techniques with a focus on their structure, surface topography, magnetic characteristics, and transport properties. Structural analysis revealed a good crystallization with epitaxial growth and low roughness and a similar quality as in films grown by pulsed laser deposition. Electrical conductivity measurements showed high room temperature resistivity (12 Ohmm), but low activation energy, indicating an extrinsic transport mechanism. A band gap of about 1.55 eV was found by optical spectroscopy. Detailed x-ray spectroscopy studies confirmed the samples to be ferrimagnetic with fully compensated Fe moments. By comparison with multiplet calculations of the spectra we found that the cation valencies are to a large extent Ni2+ and Fe3+. △ Less

Submitted 4 December, 2013; originally announced December 2013.

Comments: 8 pages, 8 figures

Journal ref: J. Appl. Phys. 115, 123903 (2014)

Magneto-thermoelectric figure of merit of Co/Cu multilayers

Authors: X. K. Hu, P. Krzysteczko, N. Liebing, S. Serrano-Guisan, K. Rott, G. Reiss, J. Kimling, T. Böhnert, K. Nielsch, H. W. Schumacher

Abstract: The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the t… ▽ More The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the thermoelectric power factor. The Seebeck coefficient reaches values up to -18 microvolt/K at room temperature and shows a magnetic field dependence up to 28.6 % upon spin reversal. In combination with thermal conductivity data of the same Co/Cu stack, we find a spin dependence of the thermoelectric figure of merit of up to 65 %. Furthermore, a spin dependence of the power factor of up to 110 % is derived. △ Less

Submitted 13 November, 2013; originally announced November 2013.

Comments: 15 pages, 3 figures

Unusual angular dependence of tunneling magneto-Seebeck effect

Authors: Christian Heiliger, Michael Czerner, Niklas Liebing, Santiago Serrano-Guisan, Karsten Rott, Günter Reiss, Hans W. Schumacher

Abstract: We find an unusual angular dependence of the tunneling magneto-Seebeck effect (TMS). The conductance shows normally a cosine-dependence with the angle between the magnetizations of the two ferromagnetic leads. In contrast, the angular dependence of the TMS depends strongly on the tunneling magneto resistance (TMR) ratio. For small TMR ratios we obtain also a cosine-dependence whereas for very larg… ▽ More We find an unusual angular dependence of the tunneling magneto-Seebeck effect (TMS). The conductance shows normally a cosine-dependence with the angle between the magnetizations of the two ferromagnetic leads. In contrast, the angular dependence of the TMS depends strongly on the tunneling magneto resistance (TMR) ratio. For small TMR ratios we obtain also a cosine-dependence whereas for very large TMR ratios the angular dependence approaches a step-like function. △ Less

Submitted 12 November, 2013; originally announced November 2013.

Comments: 4 pages, 3 figures

Electronic structure and optical band gap determination of NiFe2O4

Authors: Markus Meinert, Günter Reiss

Abstract: In a theoretical study we investigate the electronic structure and the band gap of the inverse spinel ferrite NiFe2O4. The experimental optical absorption spectrum is accurately reproduced by fitting the Tran-Blaha parameter in the modified Becke-Johnson potential. The accuracy of the commonly applied Tauc plot to find the optical gap is assessed based on the computed spectra and we find that this… ▽ More In a theoretical study we investigate the electronic structure and the band gap of the inverse spinel ferrite NiFe2O4. The experimental optical absorption spectrum is accurately reproduced by fitting the Tran-Blaha parameter in the modified Becke-Johnson potential. The accuracy of the commonly applied Tauc plot to find the optical gap is assessed based on the computed spectra and we find that this approach can lead to a misinterpretation of the experimental data. The minimum gap of NiFe2O4 is found to be a 1.53eV wide indirect gap, which is located in the minority spin channel. △ Less

Submitted 24 October, 2013; originally announced October 2013.

Comments: 4 pages, 4 figures

Journal ref: Journal of Physics: Condensed Matter 26, 115503 (2014)