Showing 1–41 of 41 results for author: Reichlova, H

Detecting slow magnetization relaxation via magnetotransport measurements based on the current-reversal method

Authors: Sebastian Beckert, Richard Schlitz, Gregor Skob**, Antonin Badura, Miina Leiviskä, Dominik Kriegner, Daniel Scheffler, Giacomo Sala, Kamil Olejník, Lisa Michez, Vincent Baltz, Andy Thomas, Helena Reichlová, Sebastian T. B. Goennenwein

Abstract: Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model sy… ▽ More Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model system, and then explore relaxation in τ -MnAl films. Compared to magnetotransport experiments based on ac lock-in techniques, we find that the dc current-reversal method is particulary sensitive to relaxation processes with relaxation time scales on the order of seconds, comparable to the current-reversal measurement time scales. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Anisotropic magnetoresistance in altermagnetic MnTe

Authors: Ruben Dario Gonzalez Betancourt, Jan Zubáč, Kevin Geishendorf, Philipp Ritzinger, Barbora Růžičková, Tommy Kotte, Jakub Železný, Kamil Olejník, Gunther Springholz, Bernd Büchner, Andy Thomas, Karel Výborný, Tomas Jungwirth, Helena Reichlová, Dominik Kriegner

Abstract: Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical res… ▽ More Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. △ Less

Submitted 25 April, 2024; originally announced April 2024.

Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3

Authors: Antonin Badura, Warlley H. Campos, Venkata K. Bharadwaj, Ismaïla Kounta, Lisa Michez, Matthieu Petit, Javier Rial, Miina Leiviskä, Vincent Baltz, Filip Krizek, Dominik Kriegner, Jan Zemen, Sjoerd Telkamp, Sebastian Sailler, Michaela Lammel, Rodrigo Jaeschke Ubiergo, Anna Birk Hellenes, Rafael González-Hernández, Jairo Sinova, Tomáš Jungwirth, Sebastian T. B. Goennenwein, Libor Šmejkal, Helena Reichlova

Abstract: The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the… ▽ More The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the presence of the anomalous Nernst effect possible despite the collinear spin arrangement. In this work, we investigate epitaxial Mn5Si3 thin films known to be an altermagnetic candidate. We show that the material manifests a sizable anomalous Nernst coefficient despite the small net magnetization of the films. The measured magnitudes of the anomalous Nernst coefficient reach a scale of microVolts per Kelvin. We support our magneto-thermoelectric measurements by density-functional theory calculations of the material's spin-split electronic structure, which allows for the finite Berry curvature in the reciprocal space. Furthermore, we present our calculations of the intrinsic Berry-curvature Nernst conductivity, which agree with our experimental observations. △ Less

Submitted 19 March, 2024; originally announced March 2024.

Anisotropy of the anomalous Hall effect in the altermagnet candidate Mn$_5$Si$_3$ films

Authors: Miina Leiviskä, Javier Rial, Antonín Badura, Rafael Lopes Seeger, Ismaïla Kounta, Sebastian Beckert, Dominik Kriegner, Isabelle Joumard, Eva Schmoranzerová, Jairo Sinova, Olena Gomonay, Andy Thomas, Sebastian T. B. Goennenwein, Helena Reichlová, Libor Šmejkal, Lisa Michez, Tomáš Jungwirth, Vincent Baltz

Abstract: Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rota… ▽ More Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rotations, which results in an unconventional spin-polarized band structure in the momentum space. This low symmetry of the crystal structure is expected to be reflected in the anisotropy of the anomalous Hall effect. In this work, we study the anisotropy of the anomalous Hall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidate material. We first demonstrate a change in the relative Néel vector orientation when rotating the external field orientation through systematic changes in both the anomalous Hall effect and the anisotropic longitudinal magnetoresistance. We then show that the anomalous Hall effect in this material is anisotropic with the Néel vector orientation relative to the crystal structure and that this anisotropy requires high crystal quality and unlikely correlates with the magnetocrystalline anisotropy. Our results provide further systematic support to the case for considering epitaxial thin films of Mn$_5$Si$_3$ as an altermagnetic candidate material. △ Less

Submitted 4 January, 2024; originally announced January 2024.

Even-in-magnetic-field part of transverse resistivity as a probe of magnetic order

Authors: Antonin Badura, Dominik Kriegner, Eva Schmoranzerová, Karel Výborný, Miina Leiviskä, Rafael Lopes Seeger, Vincent Baltz, Daniel Scheffler, Sebastian Beckert, Ismaila Kounta, Lisa Michez, Libor Šmejkal, Jairo Sinova, Sebastian T. B. Goennenwein, Jakub Železný, Helena Reichlová

Abstract: The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effec… ▽ More The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is typically ascribed to experimental artefacts and ignored. We here show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $ρ_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner-Wohlfarth modelling. We then apply our approach to magnetotransport measurements in $\rm Mn_5Si_3$ thin films with a complex compensated magnetic order. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$ K and thus offers a simple and readily available probe of the magnetic order. △ Less

Submitted 24 November, 2023; originally announced November 2023.

Comments: 18 pages, 5 figures

Anomalous Hall effect and magnetoresistance in micro-ribbons of the magnetic Weyl semimetal candidate PrRhC2

Authors: Mickey Martini, Helena Reichlova, Laura T. Corredor, Dominik Kriegner, Ye** Lee, Luca Tomarchio, Kornelius Nielsch, Ali G. Moghaddam, Jeroen van den Brink, Bernd Büchner, Sabine Wurmehl, Vitaliy Romaka, Andy Thomas

Abstract: PrRhC2 belongs to the rare-earth carbides family whose properties are of special interest among topological semimetals due to the simultaneous breaking of both inversion and time-reversal symmetry. The concomitant absence of both symmetries grants the possibility to tune the Weyl nodes chirality and to enhance topological effects like the chiral anomaly. In this work, we report on the synthesis an… ▽ More PrRhC2 belongs to the rare-earth carbides family whose properties are of special interest among topological semimetals due to the simultaneous breaking of both inversion and time-reversal symmetry. The concomitant absence of both symmetries grants the possibility to tune the Weyl nodes chirality and to enhance topological effects like the chiral anomaly. In this work, we report on the synthesis and compare the magnetotransport measurements of a poly- and single crystalline PrRhC2 sample. Using a remarkable and sophisticated technique, the PrRhC2 single crystal is prepared via focused ion beam cutting from the polycrystalline material. Our magnetometric and specific heat analyses reveal a non-collinear antiferromagnetic state below 20K, as well as short-range magnetic correlations and/or magnetic fluctuations well above the onset of the magnetic transition. The transport measurements on the PrRhC2 single crystal display an electrical resistivity peak at 3K and an anomalous Hall effect below 6K indicative of a net magnetization component in the ordered state. Furthermore, we study the angular variation of magnetoresistivities as a function of the angle between the in-plane magnetic field and the injected electrical current. We find that both the transverse and the longitudinal resistivities exhibit fourfold angular dependencies due to higher-order terms in the resistivity tensor, consistent with the orthorhombic crystal symmetry of PrRhC2. Our experimental results may be interpreted as features of topological Weyl semimetallic behavior in the magnetotransport properties. △ Less

Submitted 13 September, 2023; originally announced September 2023.

Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2

Authors: Teresa Tschirner, Philipp Keßler, Ruben Dario Gonzalez Betancourt, Tommy Kotte, Dominik Kriegner, Bernd Buechner, Joseph Dufouleur, Martin Kamp, Vedran Jovic, Libor Smejkal, Jairo Sinova, Ralph Claessen, Tomas Jungwirth, Simon Moser, Helena Reichlova, Louis Veyrat

Abstract: Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in Ru… ▽ More Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in RuO$_2$ is excluded by symmetry for the Néel vector pointing along the zero-field [001] easy-axis. Guided by a symmetry analysis and ab initio calculations, a field-induced reorientation of the Néel vector from the easy-axis towards the [110] hard-axis was used to demonstrate the anomalous Hall signal in this altermagnet. We confirm the existence of an anomalous Hall effect in our RuO$_2$ thin-film samples whose set of magnetic and magneto-transport characteristics is consistent with the earlier report. By performing our measurements at extreme magnetic fields up to 68 T, we reach saturation of the anomalous Hall signal at a field $H_{\rm c} \simeq$ 55 T that was inaccessible in earlier studies, but is consistent with the expected Néel-vector reorientation field. △ Less

Submitted 1 September, 2023; originally announced September 2023.

Comments: 4 figures

Journal ref: APL Mater. 11, 101103 (2023)

Altermagnetic lifting of Kramers spin degeneracy

Authors: J. Krempaský, L. Šmejkal, S. W. D'Souza, M. Hajlaoui, G. Springholz, K. Uhlířová, F. Alarab, P. C. Constantinou, V. Strokov, D. Usanov, W. R. Pudelko, R. González-Hernández, A. Birk Hellenes, Z. Jansa, H. Reichlová, Z. Šobáň, R. D. Gonzalez Betancourt, P. Wadley, J. Sinova, D. Kriegner, J. Minár, J. H. Dil, T. Jungwirth

Abstract: Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal… ▽ More Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal symmetry-breaking mechanisms. The first one refers to time-reversal symmetry breaking by magnetization of ferromagnets, and tends to be strong due to the non-relativistic exchange-coupling origin. The second mechanism applies to crystals with broken inversion symmetry, and tends to be comparatively weaker as it originates from the relativistic spin-orbit coupling. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic, that allows for lifting the Kramers spin degeneracy without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of lifted Kramers spin degeneracy generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization. Our observation of the altermagnetic lifting of the Kramers spin degeneracy can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors, that have been either identified recently or perceived for many decades as conventional antiferromagnets. △ Less

Submitted 21 August, 2023; originally announced August 2023.

Anomalous Nernst effect in perpendicularly magnetised τ-MnAl thin films

Authors: Daniel Scheffler, Sebastian Beckert, Helena Reichlova, Thomas G. Woodcock, Sebastian T. B. Goennenwein, Andy Thomas

Abstract: $τ$-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here we report on the anomalous Nernst effect of sputter deposited $τ… ▽ More $τ$-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here we report on the anomalous Nernst effect of sputter deposited $τ$-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 K and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetisation of the material. The anomalous Nernst coefficient of (0.6$\pm$0.24) $μ$V/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore $τ$-MnAl is a promising candidate for spin-caloritronic research. △ Less

Submitted 7 July, 2023; originally announced July 2023.

Anomalous Nernst effect in Mn$_3$NiN thin films

Authors: Sebastian Beckert, João Godinho, Freya Johnson, Jozef Kimák, Eva Schmoranzerová, Jan Zemen, Zbyněk Šobáň, Kamil Olejník, Jakub Železný, Joerg Wunderlich, Petr Němec, Dominik Kriegner, Andy Thomas, Sebastian T. B. Goennenwein, Lesley F Cohen, Helena Reichlová

Abstract: The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect… ▽ More The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Crystal growth, characterization and electronic band structure of TiSeS

Authors: Y. Shemerliuk, A. Kuibarov, O. Feia, M. Behnami, H. Reichlova, O. Suvorov, S. Selter, D. V. Efremov, S. Borisenko, B. Büchner, S. Aswartham

Abstract: Layered semimetallic van der Waals materials TiSe2 has attracted a lot of attention because of interplay of a charge density wave (CDW) state and superconductivity. Its sister compound TiS2, being isovalent to TiSe2 and having the same crystal structure, shows a semiconducting behavior. The natural rises what happens at the transition point in TiSe2-xSx, which is expected for x close to 1. Here we… ▽ More Layered semimetallic van der Waals materials TiSe2 has attracted a lot of attention because of interplay of a charge density wave (CDW) state and superconductivity. Its sister compound TiS2, being isovalent to TiSe2 and having the same crystal structure, shows a semiconducting behavior. The natural rises what happens at the transition point in TiSe2-xSx, which is expected for x close to 1. Here we report the growth and characterization of TiSeS single crystals and the study of the electronic structure using density functional theory (DFT) and angle-resolved photoemission (ARPES). We show that TiSeS single crystals have the same morphology as TiSe2. Transport measurements reveal a metallic state, no evidence of CDW was found. DFT calculations suggest that the electronic band structure in TiSeS is similar to that of TiSe2, but the electron and hole pockets in TiSeS are much smaller. The ARPES results are in good agreement with the calculations. △ Less

Submitted 13 February, 2023; v1 submitted 23 October, 2022; originally announced October 2022.

Comments: 22 pages, 9 figures

Identifying the octupole Antiferromagnetic domain orientation in Mn$_{3}$NiN by scanning Anomalous Nernst Effect microscopy

Authors: F. Johnson, J. Kimák, J. Zemen, Z. Šobáň, E. Schmoranzerová, J. Godinho, P. Němec, S. Beckert, H. Reichlová, D. Boldrin, J. Wunderlich, L. F. Cohen

Abstract: The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directio… ▽ More The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directions. The sign of each component of the anomalous Nernst effect is determined by the local antiferromagnetic domain state. In this work, a temperature gradient is induced in a 50 nm thick Mn$_{3}$NiN two micron-size Hall cross by a focused scanning laser beam, and the spatial distribution of the anomalous Nernst voltage is used to image and identify the octupole macrodomain arrangement. Although the focused laser beam width may span many individual domains, cooling from room temperature through the antiferromagnetic transition temperature in an in-plane magnetic field prepares the domain state producing a checkerboard pattern resulting from the convolution of contributions from each domain. These images together with atomistic and micromagnetic simulations suggest an average macrodomain of the order of $1 μm^{2}$. △ Less

Submitted 24 May, 2022; originally announced May 2022.

Comments: 25 pages 4 figures, 6 supplementary figures F.J. and J.K. both contributed equally to this manuscript. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://aip.scitation.org/journal/apl

Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures

Authors: T. Schumann, T. Kleinke, L. Braun, N. Meyer, G. Mussler, J. Kampmeier, D. Grützmacher, E. Schmoranzerova, K. Olejník, H. Reichlová, C. Heiliger, C. Denker, J. Walowski, T. Kampfrath, M. Münzenberg

Abstract: We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiment… ▽ More We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiments, we reveal a lateral and dynamic interaction of the ferromagnet and the topological insulator interface. △ Less

Submitted 3 February, 2022; originally announced February 2022.

Comments: 15 pages,5 figures

Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor

Authors: R. D. Gonzalez Betancourt, J. Zubáč, R. J. Gonzalez-Hernandez, K. Geishendorf, Z. Šobáň, G. Springholz, K. Olejník, L. Šmejkal, J. Sinova, T. Jungwirth, S. T. B. Goennenwein, A. Thomas, H. Reichlová, J. Železný, D. Kriegner

Abstract: The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a colli… ▽ More The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect. △ Less

Submitted 23 January, 2023; v1 submitted 13 December, 2021; originally announced December 2021.

Comments: 34 pages, 14 figures

Journal ref: Phys. Rev. Lett. 130, 036702 (2023)

Thermally induced all-optical ferromagnetic resonance in thin YIG films

Authors: E. Schmoranzerová, J. Kimák, R. Schlitz, S. T. B. Goennenwein, D. Kriegner, H. Reichlová, Z. Šobáň, G. Jakob, E. -J. Guo, M. Kläui, M. Münzenberg, P. Němec, T. Ostatnický

Abstract: All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert dam** or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic cap** layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heatin… ▽ More All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert dam** or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic cap** layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heating of the metallic layer with femtosecond laser pulses. The heating modifies the magneto-crystalline anisotropy of the YIG film and shifts the quasi-equilibrium orientation of magnetization, which results in precessional magnetization dynamics. The laser-induced magnetization precession corresponds to a uniform (Kittel) magnon mode, with the precession frequency determined by the magnetic anisotropy of the material as well as the external magnetic field, and the dam** time set by a Gilbert dam** parameter. The AO-FMR method thus enables measuring local magnetic properties, with spatial resolution given only by the laser spot size. △ Less

Submitted 31 October, 2021; originally announced November 2021.

Giant quadratic magneto-optical response of thin YIG films for sensitive magnetometric experiments

Authors: E. Schmoranzerová, T. Ostatnický, J. Kimák, D. Kriegner, H. Reichlová, R. Schlitz, A. Baďura, Z. Šobáň, M. Münzenberg, G. Jakob, E. -J. Guo, M. Kläui, P. Němec

Abstract: We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response,… ▽ More We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response, reaching values of 450 urad that are comparable with Heusler alloys or ferromagnetic semiconductors. Furthermore, we demonstrate that a proper choice of experimental conditions, particularly with respect to the wavelength, is crucial for optimization of the quadratic magneto-optical effect for magnetometry measurement. △ Less

Submitted 26 October, 2021; originally announced October 2021.

Atomic Layer Deposition of Yttrium Iron Garnet Thin Films for 3D Magnetic Structures

Authors: M. Lammel, D. Scheffler, D. Pohl, P. Swekis, S. Reitzig, H. Reichlova, R. Schlitz, K. Geishendorf, L. Siegl, B. Rellinghaus, L. M. Eng, K. Nielsch, S. T. B. Goennenwein, A. Thomas

Abstract: A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required, such as magnetic tubes and spirals. Furthermore, the materials currently used to assemble these structures are predominantly magnetic metals that do… ▽ More A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required, such as magnetic tubes and spirals. Furthermore, the materials currently used to assemble these structures are predominantly magnetic metals that do not allow to study the magnetic response of the system separately from the electronic one. In the field of spintronics, the prototypical material used for such experiments is the ferrimagnetic insulator yttrium iron garnet (Y$_3$Fe$_5$O$_{12}$, YIG). YIG is one of the best materials especially for magnonic studies due to its low Gilbert dam**. Here, we report the first successful fabrication of YIG thin films via atomic layer deposition. To that end we utilize a supercycle approach based on the combination of sub-nanometer thin layers of the binary systems Fe$_2$O$_3$ and Y$_2$O$_3$ in the correct atomic ratio on Y$_3$Al$_5$O$_{12}$ substrates with a subsequent annealing step. Our process is robust against typical growth-related deviations, ensuring a good reproducibility. The ALD-YIG thin films exhibit a good crystalline quality as well as magnetic properties comparable to other deposition techniques. One of the outstanding characteristics of atomic layer deposition is its ability to conformally coat arbitrarily-shaped substrates. ALD hence is the ideal deposition technique to grant an extensive freedom in choosing the shape of the magnetic system. The atomic layer deposition of YIG enables the fabrication of novel three dimensional magnetic nanostructures, which in turn can be utilized for experimentally investigating the phenomena predicted in those structures. △ Less

Submitted 18 January, 2022; v1 submitted 20 April, 2021; originally announced April 2021.

Macroscopic time reversal symmetry breaking by staggered spin-momentum interaction

Authors: Helena Reichlová, Rafael Lopes Seeger, Rafael González-Hernández, Ismaila Kounta, Richard Schlitz, Dominik Kriegner, Philipp Ritzinger, Michaela Lammel, Miina Leiviskä, Václav Petříček, Petr Doležal, Eva Schmoranzerová, Antonín Bad'ura, Andy Thomas, Vincent Baltz, Lisa Michez, Jairo Sinova, Sebastian T. B. Goennenwein, Tomáš Jungwirth, Libor Šmejkal

Abstract: Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Aniso… ▽ More Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Anisotropic electron interactions, on the other hand, have been a domain of correlated quantum phases, such as the T-invariant nematics or unconventional superconductors. Here we report discovery of a broken-T phase of itinerant Bloch electrons with an unconventional anisotropic spin-momentum interaction, whose staggered nature leads to the formation of two ferromagnetic-like valleys in the momentum space with opposite spin splittings. We describe qualitatively the effect by deriving a non-relativistic single-particle Hamiltonian model. Next, we identify the unconventional staggered spin-momentum interaction by first-principles electronic structure calculations in a four-sublattice antiferromagnet Mn5Si3 with a collinear checkerboard magnetic order. We show that the staggered spin-momentum interaction is set by nonrelativistic spin-symmetries which were previously omitted in relativistic physics classifications of spin interactions and topological quasiparticles. Our measurements of a spontaneous Hall effect in epilayers of antiferromagnetic Mn5Si3 with vanishing magnetization are consistent with our theory predictions. Bloch electrons with the unconventional staggered spin interaction, compatible with abundant low atomic-number materials, strong spin-coherence, and collinear antiferromagnetic order open unparalleled possibilities for realizing T-symmetry broken spin and topological quantum phases. △ Less

Submitted 20 March, 2021; v1 submitted 31 December, 2020; originally announced December 2020.

Comments: 26 pages, 4 figures

Anisotropic magneto-thermal transport in Co$_2$MnGa thin films

Authors: Philipp Ritzinger, Helena Reichlova, Dominik Kriegner, Anastasios Markou, Richard Schlitz, Michaela Lammel, Gyu Hyeon Park, Andy Thomas, Pavel Streda, Claudia Felser, Sebastian T. B. Goennenwein, Karel Vyborny

Abstract: Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by f… ▽ More Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by free energy minimisation within the Stoner-Wohlfarth formalism and conclude that both crystalline and non-crystalline components of this magneto-transport phenomenon are present in Co$_2$MnGa. Unlike the AMR which is small in relative terms, the AMTP is large due to a change of sign of the Seebeck coefficient as a function of temperature. This fact is discussed in the context of the Mott rule and further analysis of AMTP components is presented. △ Less

Submitted 28 December, 2020; originally announced December 2020.

Comments: 19 pages, 5 figures

Journal ref: Phys. Rev. B 104, 094406 (2021)

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs

Authors: Tomas Janda, Joao Godinho, Tomas Ostatnicky, Emanuel Pfitzner, Georg Ulrich, Arne Hoehl, Sonka Reimers, Zbynek Soban, Thomas Metzger, Helena Reichlova, Vít Novák, Richard Campion, Joachim Heberle, Peter Wadley, Kevin Edmonds, Ollie Amin, Jas Chauhan, Sarnjeet Dhesi, Francesco Maccherozzi, Ruben Otxoa, Pierre Roy, Kamil Olejnik, Petr Němec, Tomas Jungwirth, Bernd Kaestner , et al. (1 additional authors not shown)

Abstract: Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferroma… ▽ More Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Néel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Néel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism. △ Less

Submitted 11 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Materials 4, 094413 (2020)

Thickness dependence of the anomalous Nernst effect and the Mott relation of Weyl-semimetal Co2MnGa thin films

Authors: Gyu-Hyeon Park, Helena Reichlova, Richard Schlitz, Michaela Lammel, Anastasios Markou, Peter Swekis, Philipp Ritzinger, Dominik Kriegner, Jonathan Noky, Jacob Gayles, Yan Sun, Claudia Felser, Kornelius Nielsch, Sebastian T. B. Goennenwein, Andy Thomas

Abstract: We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistiv… ▽ More We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness. △ Less

Submitted 7 April, 2020; v1 submitted 23 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 101, 060406 (2020)

Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn$_{\text{3}}$Sn

Authors: Helena Reichlova, Tomas Janda, Joao Godinho, Anastasios Markou, Dominik Kriegner, Richard Schlitz, Jakub Zelezny, Zbynek Soban, Mauricio Bejarano, Helmut Schultheiss, Petr Nemec, Tomas Jungwirth, Claudia Felser, Joerg Wunderlich, Sebastian T. B. Goennenwein

Abstract: Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally obse… ▽ More Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally observed in non-collinear AFMs, and the presence of the equivalent to the ferromagnetic spin transfer torque via spin polarized currents was theoretically predicted. In spite of these developments, an interpretation of the rich physical phenomena observed in non-collinear antiferromagnets is challenging, since the microscopic spin arrangement, the magnetic domain distribution, and the domain orientations have proven notoriously difficult to access experimentally. This is all the more problematic, as imaging and writing magnetic domains is of central importance for applications. Successful imaging is a basic requirement to experimentally confirm the spin transfer torque acting on non-collinear domain walls and therefore of eminent interest. Here, we demonstrate that the local magnetic structure of the non-collinear AFM Mn3Sn films can be imaged by scanning thermal gradient microscopy (STGM). The technique is based on scanning a laser spot over the sample's surface, and recording the ensuing thermo-voltage. We image the magnetic structure at a series of different temperatures and show that at room temperature, the domain structure is not affected by the application of moderate magnetic fields. In addition to imaging, we establish a scheme for heat-assisted magnetic recording, using local laser heating in combination with magnetic fields to intentionally write domain patterns into the antiferromagnet. △ Less

Submitted 31 May, 2019; originally announced May 2019.

Comments: 4 figures

Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt

Authors: Michaela Lammel, Richard Schlitz, Kevin Geishendorf, Denys Makarov, Tobias Kosub, Savio Fabretti, Helena Reichlova, Rene Huebner, Kornelius Nielsch, Andy Thomas, Sebastian T. B. Goennenwein

Abstract: The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposit… ▽ More The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence for crystalline order or spontaneous magnetization in the yttrium iron garnet layer. Nevertheless, we observe a clear magnetoresistance response with a dependence on the magnetic field orientation characteristic for the SMR. We propose two models for the origin of the SMR response in paramagnetic insulator/Pt heterostructures. The first model describes the SMR of an ensemble of non-interacting paramagnetic moments, while the second model describes the magnetoresistance arising by considering the total net moment. Interestingly, our experimental data are consistently described by the net moment picture, in contrast to the situation in compensated ferrimagnets or antiferromagnets. △ Less

Submitted 28 January, 2019; originally announced January 2019.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 114, 252402 (2019)

All Electrical Access to Topological Transport Features in Mn$_{1.8}$PtSn Films

Authors: Richard Schlitz, Peter Swekis, Anastasios Markou, Helena Reichlova, Michaela Lammel, Jacob Gayles, Andy Thomas, Kornelius Nielsch, Claudia Felser, Sebastian T. B. Goennenwein

Abstract: The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topolog… ▽ More The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn$_{1.8}$PtSn below the spin reorientation temperature $T_\mathrm{SR} \approx 190$K. The magnitude of the topological Hall effect $ρ_\mathrm{xy}^\mathrm{T} = 8$ n$Ω$m is close to the value reported in bulk Mn$_2$PtSn, and the topological Nernst effect $S_\mathrm{xy}^\mathrm{T} = 115$ nV K$^{-1}$ measured in the same microstructure has a similar magnitude as reported for bulk MnGe ($S_\mathrm{xy}^\mathrm{T} \sim 150$ nV K$^{-1}$), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nano-patterned materials without detrimental magnetization related limitations. △ Less

Submitted 4 April, 2020; v1 submitted 19 December, 2018; originally announced December 2018.

Comments: 8 pages, 3 figures

Large anomalous Nernst effect in thin films of the Weyl semimetal Co2MnGa

Authors: Helena Reichlova, Richard Schlitz, Sebastian Beckert, Peter Swekis, Anastasios Markou, Yi-Cheng Chen, Savio Fabretti, Gyu Hyeon Park, Anna Niemann, Shashank Sudheendra, Andy Thomas, Kornelius Nielsch, Claudia Felser, Sebastian T. B. Goennenwein

Abstract: The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip the… ▽ More The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co$_2$MnGa films exhibit a large anomalous Nernst effect of -2$μ$V/K at 300 K, whereas the 10-nm-thick Co$_2$MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co$_2$MnGa is complex and may contain contributions from skew-scattering, side-jump or intrinsic Berry phase. In any case, the large anomalous Nernst coefficent of Co$_2$MnGa thin films at room temperature makes this material system a very promising candidate for efficient spin-caloritronic devices. △ Less

Submitted 17 July, 2018; originally announced July 2018.

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet

Authors: J. Godinho, H. Reichlova, D. Kriegner, V. Novak, K. Olejnik, Z. Kaspar, Z. Soban, P Wadley, R. P. Campion, R. M. Otxoa, P. E. Roy, J. Zelezny, T. Jungwirth, J. Wunderlich

Abstract: Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed f… ▽ More Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vector reversal in CuMnAs which comprises two collinear spin sublattices and belongs to an antiferromagnetic symmetry group with no net magnetic moment. We detect the spin reversal by measuring a second-order magnetotransport coefficient whose presence is allowed in systems with broken space inversion symmetry. The phenomenology of the non-linear transport effect we observe in CuMnAs is consistent with a microscopic scenario combining anisotropic magneto-resistance (AMR) with a transient tilt of the Néel vector due to a current-induced, staggered spin-orbit field. We use the same staggered spin-orbit field, but of a higher amplitude, for the electrical switching between reversed antiferromagnetic states which are stable and show no sign of decay over 25 hour probing times. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 15 pages, 5 pictures, supplementary informations

Short-range antiferromagnetic interaction and spin-phonon coupling in La2CoMnO6 double perovskite

Authors: R. X. Silva, C. C. Santos, H. Reichlova, X. Marti, R. Paniago, C. W. A. Paschoal

Abstract: Weak antiferromagnetic (AF) interaction in the ferromagnetic (FM) partially ordered La2CoMnO6 (LCMO) was detected by Raman spectroscopy by monitoring spin-phonon coupling. Because of the sensibility to probe short-range disorder and lattice modifications, the Raman spectroscopy showed to be an useful tool to indicate less remarkable magnetic transitions in LCMO compound. Apart from the expected sp… ▽ More Weak antiferromagnetic (AF) interaction in the ferromagnetic (FM) partially ordered La2CoMnO6 (LCMO) was detected by Raman spectroscopy by monitoring spin-phonon coupling. Because of the sensibility to probe short-range disorder and lattice modifications, the Raman spectroscopy showed to be an useful tool to indicate less remarkable magnetic transitions in LCMO compound. Apart from the expected spin-phonon coupling due to the long-range FM superexchange (Tc~230 K), phonons parameters pointed out an additional spin-phonon coupling related to the short-range AF interaction at Tc~135 K, which was not detected from the magnetic bulk response. These results reinforce the Raman spectroscopy as a powerful technique to detect antisite disorder into A2B'B"O6 magnetic double perovskites, whose magnetic properties are driven by superexchange interactions. △ Less

Submitted 13 May, 2022; v1 submitted 20 February, 2018; originally announced February 2018.

Comments: 20 pages; 3 figures

Magnetic anisotropy in antiferromagnetic hexagonal MnTe

Authors: D. Kriegner, H. Reichlova, J. Grenzer, W. Schmidt, E. Ressouche, J. Godinho, T. Wagner, S. Y. Martin, A. B. Shick, V. V. Volobuev, G. Springholz, V. Holý, J. Wunderlich, T. Jungwirth, K. Výborný

Abstract: Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic mome… ▽ More Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along $\left<1\bar100\right>$ directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed. Using epitaxially induced strain the onset of the spin-flop transition changes from $\sim2$~T to $\sim0.5$~T for films grown on InP and SrF$_2$ substrates, respectively. △ Less

Submitted 17 September, 2018; v1 submitted 23 October, 2017; originally announced October 2017.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 96, 214418 (2017)

Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks

Authors: H. Reichlova, V. Novak, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, M. Marysko, J. Wunderlich, X. Marti, T. Jungwirth

Abstract: We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate… ▽ More We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise. △ Less

Submitted 31 July, 2016; originally announced August 2016.

Journal ref: Mater. Res. Express 3 (2016) 076406

Optical investigation of magneto-structural phase transition in FeRh

Authors: V. Saidl, M. Brajer, L. Horak, H. Reichlova, K. Vyborny, M. Veis, T. Janda, F. Trojanek, I. Fina, X. Marti, T. Jungwirth, P. Nemec

Abstract: Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in F… ▽ More Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in FeRh films with thicknesses from 6 to 100 nm and it was observed that the hysteretic transition region broadens significantly in the thinner films. △ Less

Submitted 24 August, 2015; originally announced August 2015.

Comments: 7 pages, 4 figures

Journal ref: New J. Phys. 18, 083017 (2016)

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Authors: D. Kriegner, K. Vyborny, K. Olejnik, H. Reichlova, V. Novak, X. Marti, J. Gazquez, V. Saidl, P. Nemec, V. V. Volobuev, G. Springholz, V. Holy, T. Jungwirth

Abstract: A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a mul… ▽ More A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a multiple-stable memory device in epitaxial manganese telluride (MnTe) which is an antiferromagnetic counterpart of common II-VI semiconductors. Favorable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the applied magnetic field, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states which we set by heat-assisted magneto-recording and by changing the angle of the writing field. We explore the dependence of the magnitude of the zero-field read-out signal on the strength of the writing field and demonstrate the robustness of the antiferromagnetic memory states against strong magnetic field perturbations. We ascribe the multiple-stability in our antiferromagnetic memory to different distributions of domains with the Néel vector aligned along one of the three $c$-plane magnetic easy axes in the hexagonal MnTe film. The domain redistribution is controlled during the heat-assisted recording by the strength and angle of the writing field and freezes when sufficiently below the Néel temperature. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Journal ref: Nature Communications 7,11623 (2016)

Current induced torques in structures with ultra-thin IrMn antiferromagnet

Authors: H. Reichlová, D. Kriegner, V. Holý, K. Olejník, V. Novák, M. Yamada, K. Miura, S. Ogawa, H. Takahashi, T. Jungwirth, J. Wunderlich

Abstract: Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced Néel temperature and the thickness comparable to the spin-diffusion length allow us to i… ▽ More Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced Néel temperature and the thickness comparable to the spin-diffusion length allow us to investigate the role of the antiferromagnetic order in the ultra-thin IrMn films in the observed torques. In a Ta/IrMn/CoFeB structure, IrMn in the high-temperature phase diminishes the torque in the CoFeB ferromagnet. At low temperatures, the antidam** torque in CoFeB flips sign as compared to the reference Ta/CoFeB structure, suggesting that IrMn in the antiferromagnetic phase governs the net torque acting on the ferromagnet. At low temperatures, current induced torque signatures are observed also in a Ta/IrMn structure comprising no ferromagnetic layer. △ Less

Submitted 20 July, 2015; v1 submitted 12 March, 2015; originally announced March 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 92, 165424 (2015)

Role of rare-earth ionic radii on the spin-phonon coupling in multiferroic ordered double perovskites

Authors: R. B. Macedo Filho, D. A. B. Barbosa, H. Reichlova, X. Marti, A. Menezes, A. P. Ayala, C. W. A. Paschoal

Abstract: In this paper we investigated the influence of the rare-earth ionic radii on the spin-phonon coupling in RE2NiMnO6 double perovskites by Raman spectroscopy. Spin-phonon in dense Nd2NiMnO6 and Gd2NiMnO6 ceramics were investigated by Raman spectroscopy at low temperatures. The magnitude of the coupling observed in comparison with other isostructural compounds shows that it is not influenced by the r… ▽ More In this paper we investigated the influence of the rare-earth ionic radii on the spin-phonon coupling in RE2NiMnO6 double perovskites by Raman spectroscopy. Spin-phonon in dense Nd2NiMnO6 and Gd2NiMnO6 ceramics were investigated by Raman spectroscopy at low temperatures. The magnitude of the coupling observed in comparison with other isostructural compounds shows that it is not influenced by the rare-earth ionic radius, as well as the deviation of the position of the stretching phonon in the ferromagnetic phase with relation to the anharmonic contributions follows a power law. △ Less

Submitted 19 September, 2014; v1 submitted 11 September, 2014; originally announced September 2014.

Comments: 13 pages, 3 Figures

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Authors: P. Wadley, V. Novák, R. P. Campion, C. Rinaldi, X. Martí, H. Reichlová, J. Zelezný, J. Gazquez, M. A. Roldan, M. Varela, D. Khalyavin, S. Langridge, D. Kriegner, F. Máca, J. Masek, R. Bertacco, V. Holy, A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, C. T. Foxon, J. Wunderlich, T. Jungwirth

Abstract: Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and c… ▽ More Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neél temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics. △ Less

Submitted 14 February, 2014; originally announced February 2014.

Comments: 16 pages, 5 figures, Published in Nature Communications (2013)

Journal ref: Nat. Commun. 4:2322

Spin-phonon coupling in Gd(Co1/2Mn1/2)O3 perovskite

Authors: R. X. Silva, H. Reichlova, X. Marti, D. A. B. Barbosa, M. W. Lufaso, A. P. Ayala, C. W. A. Paschoal

Abstract: We have investigated the temperature-dependent Raman-active phonons and the magnetic properties of Gd(Co1/2Mn1/2)O3 perovskite ceramics in the temperature range from 40 K to 300 K. The samples crystallized in an orthorhombic distorted simple perovskite, whose symmetry belongs to the Pnma space group. The data reveals spin-phonon coupling near the ferromagnetic transition occurring at around 120 K.… ▽ More We have investigated the temperature-dependent Raman-active phonons and the magnetic properties of Gd(Co1/2Mn1/2)O3 perovskite ceramics in the temperature range from 40 K to 300 K. The samples crystallized in an orthorhombic distorted simple perovskite, whose symmetry belongs to the Pnma space group. The data reveals spin-phonon coupling near the ferromagnetic transition occurring at around 120 K. The correlation of the Raman and magnetization data suggests that the structural order influences the magnitude of the spin-phonon coupling. △ Less

Submitted 17 September, 2013; v1 submitted 4 September, 2013; originally announced September 2013.

Comments: 3 Figures, suplementary material

Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

Authors: D. Petti, E. Albisetti, H. Reichlová, J. Gazquez, M. Varela, M. Molina-Ruiz, A. F. Lopeandía, K. Olejník, V. Novák, I. Fina, B. Dkhil, J. Hayakawa, X. Marti, J. Wunderlich, T. Jungwirth, R. Bertacco

Abstract: Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magn… ▽ More Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer. △ Less

Submitted 15 February, 2013; originally announced February 2013.

Influence of Magnetic Anisotropy on Laser-induced Precession of Magnetization in Ferromagnetic Semiconductor (Ga,Mn)As

Authors: N. Tesarova, E. Rozkotova, H. Reichlova, P. Maly, V. Novak, M. Cukr, T. Jungwirth, P. Nemec

Abstract: The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external magnetic field depends strongly on the magnetic anisotropy of (Ga,Mn)As and we explain this phenomenon in terms of competing cubic and uniaxial anisotropies. We also… ▽ More The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external magnetic field depends strongly on the magnetic anisotropy of (Ga,Mn)As and we explain this phenomenon in terms of competing cubic and uniaxial anisotropies. We also show that the corresponding anisotropy fields can be deduced from the magnetic field dependence of the precession frequency. △ Less

Submitted 5 December, 2012; originally announced December 2012.

Comments: 7 pages, 4 figures

Journal ref: J. Nanosc. Nanotechnol 12, 7477-7481 (2012)

Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As

Authors: P. Nemec, V. Novak, N. Tesarova, E. Rozkotova, H. Reichlova, D. Butkovicova, F. Trojanek, K. Olejnik, P. Maly, R. P. Campion, B. L. Gallagher, Jairo Sinova, T. Jungwirth

Abstract: (Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducti… ▽ More (Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducting do** trends and micromagnetic parameters. In this paper we establish these basic material characteristics by individually optimizing the highly non-equilibrium synthesis for each Mn-do** level and by simultaneously determining all micromagnetic parameters from one set of magneto-optical pump-and-probe measurements. Our (Ga,Mn)As thin-film epilayers, spannig the wide range of accessible do**s, have sharp thermodynamic Curie point singularities typical of uniform magnetic systems. The materials show systematic trends of increasing magnetization, carrier density, and Curie temperature (reaching 188 K) with increasing do**, and monotonous do** dependence of the Gilbert dam** constant of ~0.1-0.01 and the spin stiffness of ~2-3 meVnm^2. These results render (Ga,Mn)As well controlled degenerate semiconductor with basic magnetic characteristics comparable to common band ferromagnets. △ Less

Submitted 2 July, 2012; originally announced July 2012.

Comments: 5 figures, supplementary information

Direct measurement of the three dimensional magnetization vector trajectory in GaMnAs by a magneto-optical pump-and-probe method

Authors: N. Tesarova, P. Nemec, E. Rozkotova, J. Subrt, H. Reichlova, D. Butkovicova, F. Trojanek, P. Maly, V. Novak, T. Jungwirth

Abstract: We report on a quantitative experimental determination of the three-dimensional magnetization vector trajectory in GaMnAs by means of the static and time-resolved pump-and-probe magneto-optical measurements. The experiments are performed in a normal incidence geometry and the time evolution of the magnetization vector is obtained without any numerical modeling of magnetization dynamics. Our experi… ▽ More We report on a quantitative experimental determination of the three-dimensional magnetization vector trajectory in GaMnAs by means of the static and time-resolved pump-and-probe magneto-optical measurements. The experiments are performed in a normal incidence geometry and the time evolution of the magnetization vector is obtained without any numerical modeling of magnetization dynamics. Our experimental method utilizes different polarization dependences of the polar Kerr effect and magnetic linear dichroism to disentangle the pump-induced out-of-plane and in-plane motions of magnetization, respectively. We demonstrate that the method is sensitive enough to allow for the determination of small angle excitations of the magnetization in GaMnAs. The method is readily applicable to other magnetic materials with sufficiently strong circular and linear magneto-optical effects. △ Less

Submitted 5 January, 2012; originally announced January 2012.

Comments: main paper: 7 pages, 3 figures; supplementary information: 11 pages, 6 figures

Journal ref: Appl. Phys. Lett. 100, 102403 (2012)

Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks

Authors: X. Marti, B. G. Park, J. Wunderlich, H. Reichlova, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, T. Jungwirth

Abstract: We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the… ▽ More We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift which correlates with the observation of fully rotating antiferromagnetic moments inside the IrMn film. The onset of exchange bias at lower temperatures is linked to a partial rotation between distinct metastable states and pinning of the IrMn antiferromagnetic moments in these states. The observation complements common pictures of exchange bias and reveals the presence of an electrically measurable memory effect in an antiferromagnet. △ Less

Submitted 10 August, 2011; originally announced August 2011.

Comments: 4 pages, 5 figures

CuMn-V compounds: a transition from semimetal low-temperature to semiconductor high-temperature antiferromagnets

Authors: F. Maca, J. Masek, O. Stelmakhovych, X. Marti, K. Uhlirova, P. Beran, H. Reichlova, P. Wadley, V. Novak, T. Jungwirth

Abstract: We report on a theoretical and experimental study of CuMn-V antiferromagnets. Previous works showed low-temperature antiferomagnetism and semimetal electronic structure of the semi-Heusler CuMnSb. In this paper we present theoretical predictions of high-temperature antiferromagnetism in the stable orthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs is at the transition from… ▽ More We report on a theoretical and experimental study of CuMn-V antiferromagnets. Previous works showed low-temperature antiferomagnetism and semimetal electronic structure of the semi-Heusler CuMnSb. In this paper we present theoretical predictions of high-temperature antiferromagnetism in the stable orthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs is at the transition from a semimetal to a semiconductor and we predict that CuMnP is a semiconductor. We show that the transition to a semiconductor-like band structure upon introducing the lighter group-V elements is present in both the metastable semi-Heusler and the stable orthorhombic crystal structures. On the other hand, the orthorhombic phase is crucial for the high Néel temperature. Results of X-ray diffraction, magnetization, transport, and neutron diffraction measurements we performed on chemically synthesized CuMnAs are consistent with the theory predictions. △ Less

Submitted 25 February, 2011; originally announced February 2011.

Comments: 7 pages, 10 figures