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Characterization of Three-Dimensional Microstructures in Single Crystal Diamond
Authors:
P. Olivero,
S. Rubanov,
P. Reichart,
B. C. Gibson,
S. T. Huntington,
J. R. Rabeau,
A. D. Greentree,
J. Salzman,
D. Moore,
D. N. Jamieson,
S. Prawer
Abstract:
We report on the Raman and photoluminescence characterization of three-dimensional microstructures created in single crystal diamond with a Focused Ion Beam (FIB) assisted lift-off technique. The method is based on MeV ion implantation to create a buried etchable layer, followed by FIB patterning and selective etching. In the applications of such microstructures where the properties of high qualit…
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We report on the Raman and photoluminescence characterization of three-dimensional microstructures created in single crystal diamond with a Focused Ion Beam (FIB) assisted lift-off technique. The method is based on MeV ion implantation to create a buried etchable layer, followed by FIB patterning and selective etching. In the applications of such microstructures where the properties of high quality single crystal diamond are most relevant, residual damage after the fabrication process represents a critical technological issue. The results of Raman and photoluminescence characterization indicate that the partial distortion of the sp3-bonded lattice and the formation of isolated point defects are effectively removed after thermal annealing, leaving low amounts of residual damage in the final structures. Three-dimensional microstructures in single-crystal diamond offer a large range of applications, such as quantum optics devices and fully integrated opto mechanical assemblies.
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Submitted 1 September, 2016;
originally announced September 2016.
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Creating diamond color centers for quantum optical applications
Authors:
F. C. Waldermann,
P. Olivero,
J. Nunn,
K. Surmacz,
Z. Y. Wang,
D. Jaksch,
R. A. Taylor,
I. A. Walmsley,
M. Draganski,
P. Reichart,
A. D. Greentree,
D. N. Jamieson,
S. Prawer
Abstract:
Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized,…
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Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized, and decoherence due to the residual damage caused by the implantation process itself must be mitigated. To that end we have studied photoluminescence (PL) from NV$^-$, NV$^0$ and GR1 centers formed by ion implantation of 2MeV He ions over a wide range of fluences. The sample was annealed at $600^{\circ}$C to minimize residual vacancy diffusion, allowing for the concurrent analysis of PL from NV centers and irradiation induced vacancies (GR1). We find non-monotic PL intensities with increasing ion fluence, monotonic increasing PL in NV$^0$/NV$^-$ and GR1/(NV$^0$ + NV$^1$) ratios, and increasing inhomogeneous broadening of the zero-phonon lines with increasing ion fluence. All these results shed important light on the optimal formation conditions for NV qubits. We apply our findings to an off-resonant photonic quantum memory scheme using vibronic sidebands.
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Submitted 29 October, 2007;
originally announced October 2007.
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Coherent Population Trap** in Diamond N-V Centers at Zero Magnetic Field
Authors:
Charles Santori,
David Fattal,
Sean M. Spillane,
Marco Fiorentino,
Raymond G. Beausoleil,
Andrew D. Greentree,
Paolo Olivero,
Martin Draganski,
James R. Rabeau,
Patrick Reichart,
Brant C. Gibson,
Sergey Rubanov,
David N. Jamieson,
Steven Prawer
Abstract:
Coherent population trap** at zero magnetic field was observed for nitrogen-vacancy centers in diamond under optical excitation. This was measured as a reduction in photoluminescence when the detuning between two excitation lasers matched the 2.88 GHz crystal-field splitting of the color center ground states. This behavior is highly sensitive to strain, which modifies the excited states, and w…
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Coherent population trap** at zero magnetic field was observed for nitrogen-vacancy centers in diamond under optical excitation. This was measured as a reduction in photoluminescence when the detuning between two excitation lasers matched the 2.88 GHz crystal-field splitting of the color center ground states. This behavior is highly sensitive to strain, which modifies the excited states, and was unexpected following recent experiments demonstrating optical readout of single nitrogen-vacancy electron spins based on cycling transitions. These results demonstrate for the first time that three-level Lambda configurations suitable for proposed quantum information applications can be realized simultaneously for all four orientations of nitrogen-vacancy centers at zero magnetic field.
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Submitted 31 May, 2006; v1 submitted 23 February, 2006;
originally announced February 2006.
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3D-Hydrogen Analysis of Ferromagnetic Microstructures in Proton Irradiated Graphite
Authors:
P. Reichart,
D. Spemann,
A. Hauptner,
A. Bergmaier,
V. Hable,
R. Hertenberger,
C. Greubel,
A. Setzer,
G. Dollinger,
D. N. Jamieson,
T. Butz,
P. Esquinazi
Abstract:
Recently, magnetic order in highly oriented pyrolytic graphite (HOPG) induced by proton broad- and microbeam irradiation was discovered. Theoretical models propose that hydrogen could play a major role in the magnetism mechanism. We analysed the hydrogen distribution of pristine as well as irradiated HOPG samples, which were implanted to micrometer-sized spots as well as extended areas with vari…
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Recently, magnetic order in highly oriented pyrolytic graphite (HOPG) induced by proton broad- and microbeam irradiation was discovered. Theoretical models propose that hydrogen could play a major role in the magnetism mechanism. We analysed the hydrogen distribution of pristine as well as irradiated HOPG samples, which were implanted to micrometer-sized spots as well as extended areas with various doses of 2.25 MeV protons at the Leipzig microprobe LIPSION. For this we used the sensitive 3D hydrogen microscopy system at the Munich microprobe SNAKE. The background hydrogen level in pristine HOPG is determined to be less than 0.3 at-ppm. About 4.8e15 H-atoms/cm^2 are observed in the near-surface region (4 um depth resolution). The depth profiles of the implants show hydrogen located within a confined peak at the end of range, in agreement with SRIM Monte Carlo simulations, and no evidence of diffusion broadening along the c-axis. At sample with microspots, up to 40 at-% of the implanted hydrogen is not detected, providing support for lateral hydrogen diffusion.
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Submitted 12 December, 2005;
originally announced December 2005.
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Implantation of labelled single nitrogen vacancy centers in diamond using 15N
Authors:
J. R. Rabeau*,
P. Reichart,
G. Tamanyan,
D. N. Jamieson,
S. Prawer,
F. Jelezko,
T. Gaebel,
I. Popa,
M. Domhan,
J. Wrachtrup
Abstract:
Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV 15N (I = 1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of the NV- centers. The hyperfine spectrum from 15NV- arising from implanted 15N can be distinguished from 14NV- centers created by native 14N (I = 1) sites. Analysis indicates 1 in 40…
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Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV 15N (I = 1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of the NV- centers. The hyperfine spectrum from 15NV- arising from implanted 15N can be distinguished from 14NV- centers created by native 14N (I = 1) sites. Analysis indicates 1 in 40 implanted 15N atoms give rise to an optically observable 15NV- center. This report ultimately demonstrates a mechanism by which the yield of NV- center formation by nitrogen implantation can be measured.
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Submitted 18 April, 2006; v1 submitted 30 November, 2005;
originally announced November 2005.
