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Disorder From the Bulk Ionic Liquid in Electric Double Layer Transistors
Authors:
Trevor A. Petach,
K. V. Reich,
Xiao Zhang,
Kenji Watanabe,
Takashi Taniguchi,
B. I. Shklovskii,
David Goldhaber-Gordon
Abstract:
Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our…
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Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.
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Submitted 23 January, 2018;
originally announced January 2018.
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ZnO Nanocrystal Networks Near the Insulator-Metal Transition: Tuning Contact Radius and Electron Density with Intense Pulsed Light
Authors:
Benjamin L. Greenberg,
Zachary L. Robinson,
K. V. Reich,
Claudia Gorynski,
Bryan N. Voigt,
Lorraine F. Francis,
B. I. Shklovskii,
Eray S. Aydil,
Uwe R. Kortshagen
Abstract:
Networks of ligand-free semiconductor nanocrystals (NCs) offer a valuable combination of high carrier mobility and optoelectronic properties tunable via quantum confinement. In principle, maximizing carrier mobility entails crossing the insulator-metal transition (IMT), where carriers become delocalized. A recent theoretical study predicted that this transition occurs at nρ^3 ~ 0.3, where n is the…
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Networks of ligand-free semiconductor nanocrystals (NCs) offer a valuable combination of high carrier mobility and optoelectronic properties tunable via quantum confinement. In principle, maximizing carrier mobility entails crossing the insulator-metal transition (IMT), where carriers become delocalized. A recent theoretical study predicted that this transition occurs at nρ^3 ~ 0.3, where n is the carrier density and ρis the interparticle contact radius. In this work, we satisfy this criterion in networks of plasma-synthesized ZnO NCs by using intense pulsed light (IPL) annealing to tune n and ρindependently. IPL applied to as-deposited NCs increases ρby inducing sintering, and IPL applied after the NCs are coated with Al2O3 by atomic layer deposition increases n by removing electron-trap** surface hydroxyls. This procedure does not substantially alter NC size or composition and is potentially applicable to a wide variety of nanomaterials. As we increase nρ^3 to at least twice the predicted critical value, we observe conductivity scaling consistent with arrival at the critical region of a continuous quantum phase transition. This allows us to determine the critical behavior of the dielectric constant and electron localization length at the IMT. However, our samples remain on the insulating side of the critical region, which suggests that the critical value of nρ^3 may in fact be significantly higher than 0.3.
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Submitted 23 January, 2018;
originally announced January 2018.
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Universality of Electron Mobility in LaAlO$_3$/SrTiO$_3$ and bulk SrTiO$_3$
Authors:
F. Trier,
K. V. Reich,
D. V. Christensen,
Y. Zhang,
H. L. Tuller,
Y. Z. Chen,
B. I. Shklovskii,
N. Pryds
Abstract:
Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the three-dimensional electron density near the interface, $n_{3D}$, as a function of $n_s$ and find that the mobility for LAO/STO-based interfaces depends on $n_{3D}$ in…
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Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the three-dimensional electron density near the interface, $n_{3D}$, as a function of $n_s$ and find that the mobility for LAO/STO-based interfaces depends on $n_{3D}$ in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with $N \simeq 5 \times 10^{18}~\rm{cm^{-3}}$ background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons $n_{3D} < N$ background impurities determine the electron scattering. Thus, when $n_{3D} < N$ it is natural to see in LAO/STO the same mobility as in the bulk. On the other hand, in the bulk samples with $n_{3D} > N$ the mobility collapses because scattering happens on $n_{3D}$ intentionally introduced donors. For LAO/STO the polar catastrophe which provides electrons is not supposed to provide equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO the polar catastrophe model should be revisited.
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Submitted 4 September, 2017; v1 submitted 6 April, 2017;
originally announced April 2017.
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Exciton Transfer in Array of Epitaxially Connected Nanocrystals
Authors:
K. V. Reich,
B. I. Shklovskii
Abstract:
Recently, epitaxially connected at facets semiconductor nanocrystals (NCs) have been introduced to fascilitate the electron transport between nanocrystals. To fully deploy their potential a better understanding of the exciton transfer between connected NCs is needed. We go beyond the two well-known transfer mechanisms suggested by Förster and Dexter and propose a third mechanism of exciton tandem…
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Recently, epitaxially connected at facets semiconductor nanocrystals (NCs) have been introduced to fascilitate the electron transport between nanocrystals. To fully deploy their potential a better understanding of the exciton transfer between connected NCs is needed. We go beyond the two well-known transfer mechanisms suggested by Förster and Dexter and propose a third mechanism of exciton tandem tunneling. The tandem tunnelling occurs through the intermediate state in which electron and hole are in different NCs. The corresponding rate for exciton hops is larger than the Dexter rate and for Si is even much larger that the Förster one.
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Submitted 5 February, 2017;
originally announced February 2017.
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Metal-insulator transition in films of doped semiconductor nanocrystals
Authors:
Ting Chen,
K. V. Reich,
Nicolaas J. Kramer,
Han Fu,
Uwe R. Kortshagen,
B. I. Shklovskii
Abstract:
To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration $n_c$…
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To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration $n_c$ for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted $n_c$, we find that the localization length of hop** electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.
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Submitted 14 June, 2016;
originally announced June 2016.
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Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in $\text{SrTiO}_3$
Authors:
Han Fu,
K. V. Reich,
B. I. Shklovskii
Abstract:
We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of $\text{SrTiO}_3$ sample. Due to the strongly nonlinear lattice dielectric response, the three-dimensional density of electrons $n(x)$ in such a layer decays with the distance from the surface $x$ very slowly as $n(x) \propto 1/x^{12/7}$. We show that when the mob…
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We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of $\text{SrTiO}_3$ sample. Due to the strongly nonlinear lattice dielectric response, the three-dimensional density of electrons $n(x)$ in such a layer decays with the distance from the surface $x$ very slowly as $n(x) \propto 1/x^{12/7}$. We show that when the mobility is limited by the surface scattering the contribution of such a tail to the conductivity diverges at large $x$ because of growing time electrons need to reach the surface. We explore truncation of this divergence by the finite sample width, by the bulk scattering rate, or by the crossover to the bulk linear dielectric response with the dielectric constant $κ$. As a result we arrive at the anomalously large mobility, which depends not only on the rate of the surface scattering, but also on the physics of truncation. Similar anomalous behavior is found for the Hall factor, the magnetoresistance, and the thermopower.
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Submitted 7 July, 2016; v1 submitted 28 April, 2016;
originally announced April 2016.
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Surface roughness scattering in multisubband accumulation layers
Authors:
Han Fu,
K. V. Reich,
B. I. Shklovskii
Abstract:
Accumulation layers with very large concentrations of electrons where many subbands are filled became recently available due to ionic liquid and other new methods of gating. The low temperature mobility in such layers is limited by the surface roughness scattering. However theories of roughness scattering so far dealt only with the small-density single subband two-dimensional electron gas (2DEG).…
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Accumulation layers with very large concentrations of electrons where many subbands are filled became recently available due to ionic liquid and other new methods of gating. The low temperature mobility in such layers is limited by the surface roughness scattering. However theories of roughness scattering so far dealt only with the small-density single subband two-dimensional electron gas (2DEG). Here we develop a theory of roughness-scattering limited mobility for the multisubband large concentration case. We show that with growing 2D electron concentration $n$ the surface dimensionless conductivity $σ/(2e^2/h)$ first decreases as $\propto n^{-6/5}$ and then saturates as $\sim(da_B/Δ^2)\gg 1$, where $d$ and $Δ$ are the characteristic length and height of the surface roughness, $a_B$ is the effective Bohr radius. This means that in spite of the shrinkage of the 2DEG width and the related increase of the scattering rate, the 2DEG remains a good metal. Thus, there is no re-entrant metal-insulator transition at high concentrations conjectured by Das Sarma and Hwang [PRB 89, 121413 (2014)].
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Submitted 6 July, 2016; v1 submitted 11 March, 2016;
originally announced March 2016.
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Dielectric Constant and Charging Energy in Array of Touching Nanocrystals
Authors:
K. V. Reich,
B. I. Shklovskii
Abstract:
We calculate the effective macroscopic dielectric constant $\varepsilon_a$ of a periodic array of spherical nanocrystals (NCs) with dielectric constant $\varepsilon$ immersed in the medium with dielectric constant $\varepsilon_m \ll \varepsilon$. For an array of NCs with the diameter $d$ and the distance $D$ between their centers, which are separated by the small distance $s=D-d \ll d$ or touch ea…
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We calculate the effective macroscopic dielectric constant $\varepsilon_a$ of a periodic array of spherical nanocrystals (NCs) with dielectric constant $\varepsilon$ immersed in the medium with dielectric constant $\varepsilon_m \ll \varepsilon$. For an array of NCs with the diameter $d$ and the distance $D$ between their centers, which are separated by the small distance $s=D-d \ll d$ or touch each other by small facets with radius $ρ\ll d$ what is equivalent to $s < 0$, $|s| \ll d$ we derive two analytical asymptotics of the function $\varepsilon_a(s)$ in the limit $\varepsilon/\varepsilon_m \gg 1$. Using the scaling hypothesis we interpolate between them near $s=0$ to obtain new approximated function $\varepsilon_a(s)$ for $\varepsilon/\varepsilon_m \gg 1$. It agrees with existing numerical calculations for $\varepsilon/\varepsilon_m =30$, while the standard mean-field Maxwell-Garnett and Bruggeman approximations fail to describe percolation-like behavior of $\varepsilon_a(s)$ near $s = 0$. We also show that in this case the charging energy $E_c$ of a single NC in an array of touching NCs has a non-trivial relationship to $\varepsilon_a $, namely $E_c = αe^2/\varepsilon_a d$, where $α$ varies from 1.59 to 1.95 depending on the studied three-dimensional lattices. Our approximation for $\varepsilon_a(s)$ can be used instead of mean field Maxwell-Garnett and Bruggeman approximations to describe percolation like transitions near $s=0$ for other material characteristics of NC arrays, such as conductivity.
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Submitted 17 March, 2016; v1 submitted 17 December, 2015;
originally announced December 2015.
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Hop** conductivity and insulator-metal transition in films of touching semiconductor nanocrystals
Authors:
Han Fu,
K. V. Reich,
B. I. Shklovskii
Abstract:
This paper is focused on the the variable-range hop** of electrons in semiconductor nanocrystal (NC) films below the critical do** concentration $n_c$ at which it becomes metallic. The hop** conductivity is described by the Efros-Shklovskii law which depends on the localization length of electrons. We study how the localization length grows with the do** concentration $n$ in the film of to…
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This paper is focused on the the variable-range hop** of electrons in semiconductor nanocrystal (NC) films below the critical do** concentration $n_c$ at which it becomes metallic. The hop** conductivity is described by the Efros-Shklovskii law which depends on the localization length of electrons. We study how the localization length grows with the do** concentration $n$ in the film of touching NCs. For that we calculate the electron transfer matrix element $t(n)$ between neighboring NCs for two models when NCs touch by small facets or just one point. We study two sources of disorder: variations of NC diameters and random Coulomb potentials originating from random numbers of donors in NCs. We use the ratio of $t(n)$ to the disorder-induced NC level dispersion to find the localization length of electrons due to the multi-step elastic co-tunneling process. We found three different phases at $n<n_c$ depending on the strength of disorder, the material, sizes of NCs and their facets: 1) "insulator" where the localization length of electrons increases monotonically with $n$ and 2) "oscillating insulator" when the localization length (and the conductivity) oscillates with $n$ from the insulator base and 3) "blinking metal" where the localization length periodically diverges. The first two phases were seen experimentally and we discuss how one can see the more exotic third one. In all three the localization length diverges at $n=n_c$. This allows us to find $n_c$.
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Submitted 31 December, 2015; v1 submitted 10 December, 2015;
originally announced December 2015.
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Electron gas induced in SrTiO$_3$
Authors:
Han Fu,
K. V. Reich,
B. I. Shklovskii
Abstract:
This mini-review is dedicated to the 85th birthday of Prof. L. V. Keldysh, from whom we have learned so much. In this paper we study the potential and electron density depth profiles in surface accumulation layers in crystals with a large and nonlinear dielectric response such as SrTiO$_3$ (STO) in the cases of planar, spherical and cylindrical geometries. The electron gas can be created by applyi…
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This mini-review is dedicated to the 85th birthday of Prof. L. V. Keldysh, from whom we have learned so much. In this paper we study the potential and electron density depth profiles in surface accumulation layers in crystals with a large and nonlinear dielectric response such as SrTiO$_3$ (STO) in the cases of planar, spherical and cylindrical geometries. The electron gas can be created by applying an induction $D_0$ to the STO surface. We describe the lattice dielectric response of STO using the Landau-Ginzburg free energy expansion and employ the Thomas-Fermi (TF) approximation for the electron gas. For the planar geometry we arrive at the electron density profile $n(x) \propto (x+d)^{-12/7}$, where $d \propto D_0^{-7/5} $. We extend our results to overlap** electron gases in GTO/STO/GTO multi-heterojunctions and electron gases created by spill-out from NSTO (heavily $n$-type doped STO) layers into STO. Generalization of our approach to a spherical donor cluster creating a big TF atom with electrons in STO brings us to the problem of supercharged nuclei. It is known that for an atom with nuclear charge $Ze$, where $Z > 170$, electrons collapse onto the nucleus resulting in a net charge $Z_n < Z$. Here, instead of relativistic physics, the collapse is caused by the nonlinear dielectric response. Electrons collapse into the charged spherical donor cluster with radius $R$ when its total charge number $Z$ exceeds the critical value $Z_c \simeq R/a$, where $a$ is the lattice constant. The net charge $eZ_n$ grows with $Z$ until $Z$ exceeds $Z^* \simeq (R/a)^{9/7}$. After this point, the charge number of the compact core $Z_n$ remains $\simeq Z^*$, with the rest $Z^*$ electrons forming a sparse Thomas-Fermi electron atmosphere around it. We extend our results to the case of long cylindrical clusters as well.
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Submitted 14 September, 2015; v1 submitted 14 August, 2015;
originally announced August 2015.
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Hop** Conduction via Ionic Liquid Induced Silicon Surface States
Authors:
J. Nelson,
K. V. Reich,
M. Sammon,
B. I. Shklovskii,
A. M. Goldman
Abstract:
In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for ionic liquids. We explore the case where the concentration of induced holes at the Si surface is below $10^{12}\text{cm}^{-2}$, hundreds of times smaller than re…
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In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for ionic liquids. We explore the case where the concentration of induced holes at the Si surface is below $10^{12}\text{cm}^{-2}$, hundreds of times smaller than record values. We find that in this case an excess negative ion binds a hole on the interface between the IL and Si becoming a surface acceptor. We study the surface conductance of holes hop** between such nearest neighbor acceptors. Analyzing the acceptor concentration dependence of this conductivity, we find that the localization length of a hole is in reasonable agreement with our direct variational calculation of its binding energy. The observed hop** conductivity resembles that of well studied $\text{Na}^{+}$ implanted Si MOSFETs.
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Submitted 23 August, 2015; v1 submitted 30 April, 2015;
originally announced May 2015.
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Collapse of electrons to a donor cluster in SrTiO$_3$
Authors:
Han Fu,
K. V. Reich,
B. I. Shklovskii
Abstract:
It is known that a nucleus with charge $Ze$ where $Z>170$ creates electron-positron pairs from the vacuum. These electrons collapse onto the nucleus resulting in a net charge $Z_n<Z$ while the positrons are emitted. This effect is due to the relativistic dispersion law. The same reason leads to the collapse of electrons to the charged impurity with a large charge number $Z$ in narrow-band gap semi…
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It is known that a nucleus with charge $Ze$ where $Z>170$ creates electron-positron pairs from the vacuum. These electrons collapse onto the nucleus resulting in a net charge $Z_n<Z$ while the positrons are emitted. This effect is due to the relativistic dispersion law. The same reason leads to the collapse of electrons to the charged impurity with a large charge number $Z$ in narrow-band gap semiconductors and Weyl semimetals as well as graphene. In this paper, a similar effect of electron collapse and charge renormalization is found for donor clusters in SrTiO$_3$ (STO), but with a very different origin. At low temperatures, STO has an enormously large dielectric constant. Because of this, the nonlinear dielectric response becomes dominant when the electric field is not too small. We show that this leads to the collapse of surrounding electrons into a charged spherical donor cluster with radius $R$ when its total charge number $Z$ exceeds a critical value $Z_c\simeq R/a$ where $a$ is the lattice constant. Using the Thomas-Fermi approach, we find that the net charge $Z_ne$ grows with $Z$ until $Z$ exceeds another value $Z^*\simeq(R/a)^{9/7}$. After this point, $Z_n$ remains $\sim Z^*$. We extend our results to the case of long cylindrical clusters. Our predictions can be tested by creating discs and stripes of charge on the STO surface.
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Submitted 27 April, 2015; v1 submitted 14 April, 2015;
originally announced April 2015.
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Accumulation, inversion, and depletion layers in SrTiO$_3$
Authors:
K. V. Reich,
M. Schecter,
B. I. Shklovskii
Abstract:
We study potential and electron density depth profiles in accumulation, inversion and depletion layers in crystals with large and nonlinear dielectric response such as $\mathrm{SrTiO_3}$. We describe the lattice dielectric response using the Landau-Ginzburg free energy expansion. In accumulation and inversion layers we arrive at new nonlinear dependencies of the width $d$ of the electron gas on ap…
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We study potential and electron density depth profiles in accumulation, inversion and depletion layers in crystals with large and nonlinear dielectric response such as $\mathrm{SrTiO_3}$. We describe the lattice dielectric response using the Landau-Ginzburg free energy expansion. In accumulation and inversion layers we arrive at new nonlinear dependencies of the width $d$ of the electron gas on applied electric field $D_0$. Particularly important is the predicted electron density profile of accumulation layers (including the $\mathrm{LaAlO_3/SrTiO_3}$ interface) $n(x) \propto (x+d)^{-12/7}$, where $d \propto D_0^{-7/5}$ . We compare this profile with available data and find satifactory agreement. For a depletion layer we find an unconventional nonlinear dependence of capacitance on voltage. We also evaluate the role of spatial dispersion in the dielectric response by adding a gradient term to the Landau-Ginzburg free energy.
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Submitted 6 March, 2015; v1 submitted 18 December, 2014;
originally announced December 2014.
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Theory of a field effect transistor based on semiconductor nanocrystal array
Authors:
K. V. Reich,
Tianran Chen,
B. I. Shklovskii
Abstract:
We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array. Computer simulations and analytical theory are used to study the array screening and corresponding evolution of electron concentrations of the first and second l…
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We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array. Computer simulations and analytical theory are used to study the array screening and corresponding evolution of electron concentrations of the first and second layers with growing gate voltage. When first layer NCs have two electrons per NC the quantization energy gap between its 1S and 1P levels induces occupation of 1S levels of second layer NCs. Only at a larger gate voltage electrons start leaving 1S levels of second layer NCs and filling 1P levels of first layer NCs. By substantially larger gate voltage, all the electrons vacate the second layer and move to 1P levels of first layer NCs. As a result of this nontrivial evolution of the two layers concentrations, the surface conductivity of FET non-monotonically depends on the gate voltage. The same evolution of electron concentrations leads to non-monotonous behaviour of the differential capacitance.
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Submitted 19 March, 2014; v1 submitted 17 March, 2014;
originally announced March 2014.
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Photoluminescence in array of doped semiconductor nanocrystals
Authors:
K. V. Reich,
Tianran Chen,
Al. L. Efros,
B. I. Shklovskii
Abstract:
We study the dependence of the quantum yield of photoluminescence of a dense, periodic array of semiconductor nanocrystals (NCs) on the level of do** and NC size. Electrons introduced to NCs via do** quench photoluminescence by the Auger process, so that practically only NCs without electrons contribute to the photoluminescence. Computer simulation and analytical theory are used to find a frac…
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We study the dependence of the quantum yield of photoluminescence of a dense, periodic array of semiconductor nanocrystals (NCs) on the level of do** and NC size. Electrons introduced to NCs via do** quench photoluminescence by the Auger process, so that practically only NCs without electrons contribute to the photoluminescence. Computer simulation and analytical theory are used to find a fraction of such empty NCs as a function of the average number of donors per NC and NC size. For an array of small spherical NCs, the quantization gap between 1S and 1P levels leads to transfer of electrons from NCs with large number of donors to those without donors. As a result, empty NCs become extinct, and photoluminescence is quenched abruptly at an average number of donors per NC close to 1.8. The relative intensity of photoluminescence is shown to correlate with the type of hop** conductivity of an array of NCs.
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Submitted 3 January, 2014; v1 submitted 2 October, 2013;
originally announced October 2013.
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Temperature gradient and Fourier's law in gradient-mass harmonic systems
Authors:
K. V. Reich
Abstract:
Heat flow and thermal profile in a 1D harmonic lattice with coordinate-dependent masses has been calculated in the thermodynamic limit. It is shown in the particular example of a 1D harmonic lattice with linearly increasing masses that in standard Langevin conditions of contact, a temperature gradient can form, and Fourier's law can be obeyed.
Heat flow and thermal profile in a 1D harmonic lattice with coordinate-dependent masses has been calculated in the thermodynamic limit. It is shown in the particular example of a 1D harmonic lattice with linearly increasing masses that in standard Langevin conditions of contact, a temperature gradient can form, and Fourier's law can be obeyed.
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Submitted 8 May, 2013; v1 submitted 3 February, 2013;
originally announced February 2013.
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Electron-phonon interaction in a local region
Authors:
K. V. Reich
Abstract:
The paper reports on a study of electron-phonon interaction within a limited nanosized region. We invoked the modified Fröhlich's Hamiltonian to calculate the electron self-energy, as well as the elastic and inelastic scattering cross sections. New effects have been revealed, more specifically: a bound state forms within the limited nanosized region, electrons undergo resonant elastic scattering,…
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The paper reports on a study of electron-phonon interaction within a limited nanosized region. We invoked the modified Fröhlich's Hamiltonian to calculate the electron self-energy, as well as the elastic and inelastic scattering cross sections. New effects have been revealed, more specifically: a bound state forms within the limited nanosized region, electrons undergo resonant elastic scattering, with strong inelastic scattering being possible from this state even at low electron energies. The effect of scattering on the magnetic-field-independent dephasing time, in particular, in a diamond-decorated carbon nanotube, has been determined. The effect of strong inelastic electron scattering on thermal resistance at the metal-insulator interface is discussed.
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Submitted 5 January, 2011;
originally announced January 2011.
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Requirements for Digital Preservation Systems: A Bottom-Up Approach
Authors:
David S. H. Rosenthal,
Thomas S. Robertson,
Tom Lipkis,
Vicky Reich,
Seth Morabito
Abstract:
The field of digital preservation is being defined by a set of standards developed top-down, starting with an abstract reference model (OAIS) and gradually adding more specific detail. Systems claiming conformance to these standards are entering production use. Work is underway to certify that systems conform to requirements derived from OAIS.
We complement these requirements derived top-down…
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The field of digital preservation is being defined by a set of standards developed top-down, starting with an abstract reference model (OAIS) and gradually adding more specific detail. Systems claiming conformance to these standards are entering production use. Work is underway to certify that systems conform to requirements derived from OAIS.
We complement these requirements derived top-down by presenting an alternate, bottom-up view of the field. The fundamental goal of these systems is to ensure that the information they contain remains accessible for the long term. We develop a parallel set of requirements based on observations of how existing systems handle this task, and on an analysis of the threats to achieving the goal. On this basis we suggest disclosures that systems should provide as to how they satisfy their goals.
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Submitted 6 September, 2005; v1 submitted 6 September, 2005;
originally announced September 2005.
