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Synthetic Semimetals with van der Waals Interfaces
Authors:
Bojja Aditya Reddy,
Evgeniy Ponomarev,
Ignacio Gutiérrez-Lezama,
Nicolas Ubrig,
Céline Barreteau,
Enrico Giannini,
Alberto F. Morpurgo
Abstract:
The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces formed by two different semiconductors. Guided by existing ab-initio calculations, we select WSe$_2$ and SnSe$_2$ mono and multilayers to assemble vd…
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The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces formed by two different semiconductors. Guided by existing ab-initio calculations, we select WSe$_2$ and SnSe$_2$ mono and multilayers to assemble vdW interfaces, and demonstrate the occurrence of semimetallicity by means of different transport experiments. Semimetallicity manifests itself in a finite minimum conductance upon swee** the gate over a large range in ionic liquid gated devices, which also offer spectroscopic capabilities enabling the quantitative determination of the band overlap. The semimetallic state is additionally revealed in Hall effect measurements by the coexistence of electrons and holes, observed by either looking at the evolution of the Hall slope with swee** the gate voltage or with lowering temperature. Finally, semimetallicity results in the low-temperature metallic conductivity of interfaces of two materials that are themselves insulating. These results demonstrate the possibility to implement a state of matter that had not yet been realized in vdW interfaces, and represent a first step towards using these interfaces to engineer topological or excitonic insulating states.
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Submitted 27 January, 2020;
originally announced January 2020.
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Tunneling spectroscopy of gate-induced superconductivity in MoS$_2$
Authors:
Davide Costanzo,
Hai**g Zhang,
Bojja Aditya Reddy,
Helmuth Berger,
Alberto F. Morpurgo
Abstract:
The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nano-electronics. With the exception of LaAlO$_3$/SrTiO$_3$ interfaces, experiments on gate-induced superconductors have been largely confined to resistance measurements, which provide very limited information about the superconducting state. Here, we explore gate-induced super…
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The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nano-electronics. With the exception of LaAlO$_3$/SrTiO$_3$ interfaces, experiments on gate-induced superconductors have been largely confined to resistance measurements, which provide very limited information about the superconducting state. Here, we explore gate-induced superconductivity in MoS$_2$ by performing tunneling spectroscopy to determine the energy-dependent density of states (DOS) for different levels of electron density $\textit{n}$. In the superconducting state, the DOS is strongly suppressed at energy smaller than the gap, Δ, which is maximum (Δ~ 2 meV) for $\textit{n}$ of ~ 10$^{14}$ cm$^{-2}$ and decreases monotonously for larger $\textit{n}$. A perpendicular magnetic field $\textit{B}$ generates states at $E<Δ$ that fill the gap, but a 20% DOS suppression of superconducting origin unexpectedly persists much above the transport critical field. Conversely, an in-plane field up to 10 T leaves the DOS entirely unchanged. Our measurements exclude that the superconducting state in MoS$_2$ is fully gapped and reveal the presence of a DOS that vanishes linearly with energy, the explanation of which requires going beyond a conventional, purely phonon-driven Bardeen-Cooper-Schrieffer mechanism.
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Submitted 8 June, 2018;
originally announced June 2018.
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Electroluminescence from indirect band gap semiconductor ReS$_2$
Authors:
Ignacio Gutiérrez Lezama,
Bojja Aditya Reddy,
Nicolas Ubrig,
Alberto F. Morpurgo
Abstract:
It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS$_2$ are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient opto-electronic devices. The situation is however unclear, because even more recently an indirect transition in the photoluminescence spectra of this material has been…
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It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS$_2$ are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient opto-electronic devices. The situation is however unclear, because even more recently an indirect transition in the photoluminescence spectra of this material has been detected, whose energy is smaller than the supposed direct gap. To address this issue we exploit the properties of ionic liquid gated field-effect transistors (FETs) to investigate the gap structure of bulk ReS$_2$. Using these devices, whose high quality is demonstrated by a record high electron FET mobility of 1,100 cm$^2$/Vs at 4K, we can induce hole transport at the surface of the material and determine quantitatively the smallest band gap present in the material, irrespective of its direct or indirect nature. The value of the band gap is found to be 1.41 eV, smaller than the 1.5 eV direct optical transition but in good agreement with the energy of the indirect optical transition, providing an independent confirmation that bulk ReS$_2$ is an indirect band gap semiconductor. Nevertheless, contrary to the case of more commonly studied semiconducting TMDs (e.g., MoS$_2$, WS$_2$, etc.) in their bulk form, we also find that ReS$_2$ FETs fabricated on bulk crystals do exhibit electroluminescence when driven in the ambipolar injection regime, likely because the difference between the direct and indirect gap is only 100 meV. We conclude that ReS$_2$ does deserve more in-depth investigations in relation to possible opto-electronic applications.
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Submitted 4 October, 2016;
originally announced October 2016.
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An Improved UP-Growth High Utility Itemset Mining
Authors:
B. Adinarayana Reddy,
O. Srinivasa Rao,
M. H. M. Krishna Prasad
Abstract:
Efficient discovery of frequent itemsets in large datasets is a crucial task of data mining. In recent years, several approaches have been proposed for generating high utility patterns, they arise the problems of producing a large number of candidate itemsets for high utility itemsets and probably degrades mining performance in terms of speed and space. Recently proposed compact tree structure, vi…
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Efficient discovery of frequent itemsets in large datasets is a crucial task of data mining. In recent years, several approaches have been proposed for generating high utility patterns, they arise the problems of producing a large number of candidate itemsets for high utility itemsets and probably degrades mining performance in terms of speed and space. Recently proposed compact tree structure, viz., UP Tree, maintains the information of transactions and itemsets, facilitate the mining performance and avoid scanning original database repeatedly. In this paper, UP Tree (Utility Pattern Tree) is adopted, which scans database only twice to obtain candidate items and manage them in an efficient data structured way. Applying UP Tree to the UP Growth takes more execution time for Phase II. Hence this paper presents modified algorithm aiming to reduce the execution time by effectively identifying high utility itemsets.
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Submitted 3 December, 2012;
originally announced December 2012.
