Electron delocalization in a 2D Mott insulator
Authors:
Cosme G. Ayani,
Michele Pisarra,
Iván M. Ibarburu,
Clara Rebanal,
Manuela Garnica,
Fabián Calleja,
Fernando Martín,
Amadeo L. Vázquez de Parga
Abstract:
The prominent role of electron-electron interactions in two-dimensional (2D) materials versus three-dimensional (3D) ones is at the origin of the great variety of fermionic correlated states reported in the literature. In this respect, artificial van der Waals heterostructures comprising single layers of highly correlated insulators allow one to explore the effect of the subtle interlayer interact…
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The prominent role of electron-electron interactions in two-dimensional (2D) materials versus three-dimensional (3D) ones is at the origin of the great variety of fermionic correlated states reported in the literature. In this respect, artificial van der Waals heterostructures comprising single layers of highly correlated insulators allow one to explore the effect of the subtle interlayer interaction in the way electrons correlate. In this work, we study the temperature dependence of the electronic properties of a van der Waals heterostructure composed of a single-layer Mott insulator lying on a metallic substrate by performing quasi-particle interference (QPI) maps. We show the emergence of a Fermi contour in the 2D Mott insulator at temperatures below 11K, which we attribute to the delocalization of the Mott electrons associated with the formation of a quantum coherent Kondo lattice. This Kondo lattice introduces a new periodicity in the system, so that the resulting Fermi surface encompasses both the substrate conduction electrons and the now delocalized correlated electrons from the 2D Mott insulator. Density Functional Theory calculations allow us to pinpoint the scattering vectors responsible for the experimentally observed quasi-particle interference maps, thus providing a complete picture of the delocalization of highly correlated electrons in a 2D Mott insulator.
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Submitted 16 May, 2024;
originally announced May 2024.
Unveiling the inter-layer interaction in a 1H/1T TaS$_2$ van de Waals heterostructure
Authors:
Cosme G. Ayani,
M. Bosnar,
F. Calleja,
Andrés Pinar Solé,
O. Stetsovych,
Iván M. Ibarburu,
Clara Rebanal,
Manuela Garnica,
Rodolfo Miranda,
M. M. Otrokov,
M. Ondráček,
Pavel Jelínek,
A. Arnau,
Amadeo L. Vázquez de Parga
Abstract:
This study delves into the intriguing properties of 1H/1T-TaS$_2$ van der Waals heterostructure, focusing on the transparency of the 1H layer to the Charge Density Wave of the underlying 1T layer. Despite the sizable interlayer separation and metallic nature of the 1H layer, positive bias voltages result in a pronounced superposition of the 1T charge density wave structure on the 1H layer. The con…
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This study delves into the intriguing properties of 1H/1T-TaS$_2$ van der Waals heterostructure, focusing on the transparency of the 1H layer to the Charge Density Wave of the underlying 1T layer. Despite the sizable interlayer separation and metallic nature of the 1H layer, positive bias voltages result in a pronounced superposition of the 1T charge density wave structure on the 1H layer. The conventional explanation relying on tunneling effects proves insufficient. Through a comprehensive investigation combining lowtemperature scanning tunneling microscopy, scanning tunneling spectroscopy, non-contact atomic force microscopy, and firstprinciples calculations, we propose an alternative interpretation. The transparency effect arises from a weak yet substantial electronic coupling between the 1H and 1T layers, challenging prior understanding of the system. Our results highlight the critical role played by interlayer electronic interactions in van der Waals heterostructures to determine the final ground states of the systems.
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Submitted 26 February, 2024;
originally announced February 2024.
