A high on-off ratio beamsplitter interaction for gates on bosonically encoded qubits
Authors:
Benjamin J. Chapman,
Stijn J. de Graaf,
Sophia H. Xue,
Yaxing Zhang,
James Teoh,
Jacob C. Curtis,
Takahiro Tsunoda,
Alec Eickbusch,
Alexander P. Read,
Akshay Koottandavida,
Shantanu O. Mundhada,
Luigi Frunzio,
M. H. Devoret,
S. M. Girvin,
R. J. Schoelkopf
Abstract:
Encoding a qubit in a high quality superconducting microwave cavity offers the opportunity to perform the first layer of error correction in a single device, but presents a challenge: how can quantum oscillators be controlled while introducing a minimal number of additional error channels? We focus on the two-qubit portion of this control problem by using a 3-wave mixing coupling element to engine…
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Encoding a qubit in a high quality superconducting microwave cavity offers the opportunity to perform the first layer of error correction in a single device, but presents a challenge: how can quantum oscillators be controlled while introducing a minimal number of additional error channels? We focus on the two-qubit portion of this control problem by using a 3-wave mixing coupling element to engineer a programmable beamsplitter interaction between two bosonic modes separated by more than an octave in frequency, without introducing major additional sources of decoherence. Combining this with single-oscillator control provided by a dispersively coupled transmon provides a framework for quantum control of multiple encoded qubits. The beamsplitter interaction $g_\text{bs}$ is fast relative to the timescale of oscillator decoherence, enabling over $10^3$ beamsplitter operations per coherence time, and approaching the typical rate of the dispersive coupling $χ$ used for individual oscillator control. Further, the programmable coupling is engineered without adding unwanted interactions between the oscillators, as evidenced by the high on-off ratio of the operations, which can exceed $10^5$. We then introduce a new protocol to realize a hybrid controlled-SWAP operation in the regime $g_{bs}\approxχ$, in which a transmon provides the control bit for the SWAP of two bosonic modes. Finally, we use this gate in a SWAP test to project a pair of bosonic qubits into a Bell state with measurement-corrected fidelity of $95.5\% \pm 0.2\%$.
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Submitted 2 July, 2023; v1 submitted 22 December, 2022;
originally announced December 2022.
Precision measurement of the microwave dielectric loss of sapphire in the quantum regime with parts-per-billion sensitivity
Authors:
Alexander P. Read,
Benjamin J. Chapman,
Chan U Lei,
Jacob C. Curtis,
Suhas Ganjam,
Lev Krayzman,
Luigi Frunzio,
Robert J. Schoelkopf
Abstract:
Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of $100$ parts-per-billion, but because these inferences are drawn from fully fabricated devices with many loss channels, they do not definitively implicate or exonerate the dielectric. To resolve this ambiguity, we have devised a m…
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Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of $100$ parts-per-billion, but because these inferences are drawn from fully fabricated devices with many loss channels, they do not definitively implicate or exonerate the dielectric. To resolve this ambiguity, we have devised a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of $5$ parts per billion. The method, which we call the dielectric dipper, involves the in-situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the sample's participation in the cavity mode enables a differential measurement of the sample's dielectric loss tangent. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures, and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of EFG sapphire, from which we infer a bulk loss tangent of $62(7) \times 10^{-9}$ and a substrate-air interface loss tangent of $12(2) \times 10^{-4}$. For a typical transmon, this bulk loss tangent would limit device quality factors to less than $20$ million, suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than $15(5) \times 10^{-9}$. As this bound is about 3 times smaller than the bulk loss tangent of EFG sapphire, use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.
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Submitted 30 April, 2023; v1 submitted 28 June, 2022;
originally announced June 2022.
