Showing 1–9 of 9 results for author: Ray, K G

Red shift of the superconductivity cavity resonance in Josephson junction qubits as a direct signature of TLS population inversion

Authors: Alexander L. Burin, Moshe Schechter, Daniel Tennant, Keith G. Ray, Yaniv J. Rosen

Abstract: Quantum two-level systems (TLSs) limit the performance of superconducting qubits and superconducting and optomechanical resonators breaking down the coherence and absorbing the energy of oscillations. TLS absorption can be suppressed or even switched to the gain regime by inverting TLS populations. Here we theoretically explore the regime where the full inversion of TLS populations is attained at… ▽ More Quantum two-level systems (TLSs) limit the performance of superconducting qubits and superconducting and optomechanical resonators breaking down the coherence and absorbing the energy of oscillations. TLS absorption can be suppressed or even switched to the gain regime by inverting TLS populations. Here we theoretically explore the regime where the full inversion of TLS populations is attained at energies below a pump field quantization energy by simultaneously applying the pump field and the time varying bias. This regime is attained changing the bias sufficiently slowly to fully invert TLS populations when their energies cross resonance with the pump field and sufficiently fast to avoid TLS relaxation between two resonance crossing events. This population inversion is accompanied by a significant red shift of cavity resonance due to quantum level repulsion. The red-shift in frequency serves as a signature of the population inversion, as its re-entrant behavior as function of bias sweep rate and of the magnitude of the pump field allows the determination of the TLSs dipole moment and relaxation time. The predicted behavior is qualitatively consistent with the recent experimental observations in Al superconducting resonators. △ Less

Submitted 7 February, 2024; v1 submitted 28 January, 2024; originally announced January 2024.

Comments: 9 pages, 6 figures, to be submitted, comments are welcome!

Edge Magnetoplasmon Dispersion and Time-Resolved Plasmon Transport in a Quantum Anomalous Hall Insulator

Authors: Luis A. Martinez, Gang Qiu, Peng Deng, Peng Zhang, Keith G. Ray, Lixuan Tai, Ming-Tso Wei, Haoran He, Kang L. Wang, Jonathan L DuBois, Dong-Xia Qu

Abstract: A quantum anomalous Hall (QAH) insulator breaks reciprocity by combining magnetic polarization and spin-orbit coupling to generate a unidirectional transmission of signals in the absence of an external magnetic field. Such behavior makes QAH materials a good platform for the innovation of circulator technologies. However, it remains elusive as to how the wavelength of the chiral edge plasmon relat… ▽ More A quantum anomalous Hall (QAH) insulator breaks reciprocity by combining magnetic polarization and spin-orbit coupling to generate a unidirectional transmission of signals in the absence of an external magnetic field. Such behavior makes QAH materials a good platform for the innovation of circulator technologies. However, it remains elusive as to how the wavelength of the chiral edge plasmon relates to its frequency and how the plasmon wave packet is excited in the time domain in a QAH insulator. Here, we investigate the edge magnetoplasmon (EMP) resonances in Cr-(Bi,Sb)$_2$Te$_3$ by frequency and time domain measurements. From disk shaped samples with various dimensions, we obtain the dispersion relation of EMPs and extract the drift velocity of the chiral edge state. From the time-resolved transport measurements, we identify the velocity of the plasmon wave packet and observe a transition from the edge to bulk transport at an elevated temperature. We show that the frequency and time domain measurements are well modeled by loss from the microwave induced dissipative channels in the bulk area. Our results demonstrate that the EMP decay rate can be significantly reduced by applying a low microwave power and fabricating devices of larger diameter $\ge100~μ$m. In a $R=125~μ$m sample, a non-reciprocity of 20 dB has been realized at 1.3 GHz, shining light on using QAH insulators to develop on-chip non-reciprocal devices. △ Less

Submitted 29 August, 2023; originally announced August 2023.

Dangling bonds as possible contributors to charge noise in silicon and silicon-germanium quantum dot qubits

Authors: Joel B. Varley, Keith G. Ray, Vincenzo Lordi

Abstract: Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying the origins of these charge fluctuations is therefore a critical step toward improving Si quantum-dot-based qubits. Here we use hybrid functional calcu… ▽ More Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying the origins of these charge fluctuations is therefore a critical step toward improving Si quantum-dot-based qubits. Here we use hybrid functional calculations to investigate possible atomistic sources of charge noise, focusing on charge trap** at Si and Ge dangling bonds (DBs). We evaluate the role of global and local environment in the defect levels associated with DBs in Si, Ge, and \sige alloys, and consider their trap** and excitation energies within the framework of configuration coordinate diagrams. We additionally consider the influence of strain and oxidation in charge-trap** energetics by analyzing Si and Ge$_{\rm Si}$ DBs in SiO$_2$ and strained Si layers in typical \sige quantum dot heterostructures. Our results identify that Ge dangling bonds are more problematic charge-trap** centers both in typical \sige alloys and associated oxidation layers, and they may be exacerbated by compositional inhomogeneities. These results suggest the importance of alloy homogeneity and possible passivation schemes for DBs in Si-based quantum dot qubits and are of general relevance to mitigating possible trap levels in other Si, Ge, and Si$_{1-x}$Ge$_{x}$-based metal-oxide-semiconductor stacks and related devices. △ Less

Submitted 9 June, 2023; originally announced June 2023.

Comments: 37 pages, 8 figures

Report number: LLNL-JRNL-849060

XPS analysis of molecular contamination and sp2 amorphous carbon on oxidized (100) diamond

Authors: Ricardo Vidrio, Daniel Vincent, Benjamin Bachman, Cesar Saucedo, Maryam Zahedian, Zihong Xu, Junyu Lai, Timothy A. Grotjohn, Shimon Kolkowitz, Jung-Hun Seo, Robert J. Hamers, Keith G. Ray, Zhenqiang Ma, Jennifer T. Choy

Abstract: The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wide breadth of O-termination techniques, it can be difficult to discern which method would yield the highest and most consistent O coverage. Furthermore, the interpretation of surface characterization techniques is complic… ▽ More The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wide breadth of O-termination techniques, it can be difficult to discern which method would yield the highest and most consistent O coverage. Furthermore, the interpretation of surface characterization techniques is complicated by surface morphology and purity, which if not accounted for will yield inconsistent determination of the oxygen coverage. We present a comprehensive approach to consistently prepare and analyze oxygen termination of surfaces on (100) single-crystalline diamond. We report on X-ray Photoelectron Spectroscopy (XPS) characterization of diamond surfaces treated with six oxidation methods that include various wet chemical oxidation techniques, photochemical oxidation with UV illumination, and steam oxidation using atomic layer deposition (ALD). Our analysis entails a rigorous XPS peak-fitting procedure for measuring the functionalization of O-terminated diamond. The findings herein have provided molecular-level insights on oxidized surfaces in (100) diamond, including the demonstration of clear correlation between the measured oxygen atomic percentage and the presence of molecular contaminants containing nitrogen, silicon, and sulfur. We also provide a comparison of the sp2 carbon content with the O1s atomic percentage and discern a correlation with the diamond samples treated with dry oxidation which eventually tapers off at a max O1s atomic percentage value of 7.09 +/- 0.40%. Given these results, we conclude that the dry oxidation methods yield some of the highest oxygen amounts, with the ALD water vapor technique proving to be the cleanest technique out of all the oxidation methods explored in this work. △ Less

Submitted 8 May, 2024; v1 submitted 5 April, 2023; originally announced April 2023.

Phase-Slip Lines and Anomalous Josephson Effects in a Tungsten Clusters-Topological Insulator Microbridge

Authors: Dong-Xia Qu, Joseph J. Cuozzo, Nick E. Teslich, Keith G. Ray, Zurong Dai, Tian T. Li, George F. Chapline, Jonathan L. DuBois, Enrico Rossi

Abstract: Superconducting topological systems formed by a strong 3D topological insulator (TI) in proximity to a conventional $s$-wave superconductor (SC) have been intensely studied as they may host Majorana zero modes. However, there are limited experimental realizations of TI-SC systems in which robust superconducting pairing is induced on the surface states of the TI and a topological superconducting st… ▽ More Superconducting topological systems formed by a strong 3D topological insulator (TI) in proximity to a conventional $s$-wave superconductor (SC) have been intensely studied as they may host Majorana zero modes. However, there are limited experimental realizations of TI-SC systems in which robust superconducting pairing is induced on the surface states of the TI and a topological superconducting state is established. Here, we fabricate a novel TI-SC system by depositing, via focused ion beam, tungsten (W) nanoscale clusters on the surface of TI Bi$_{0.91}$Sb$_{0.09}$. We find that the resulting heterostructure supports phase-slip lines that act as effective Josephson junctions. We probe the response of the system to microwave radiation. We find that for some ac frequencies, and powers, the resulting Shapiro steps' structure of the voltage-current characteristic exhibits a missing first step and an unexpectedly wide second Shapiro step. The theoretical analysis of the measurements shows that the unusual Shapiro response arises from the interplay between a static Josephson junction and a dynamic one, and allows us to identify the conditions under which the missing first step can be attributed to the topological nature of the Josephson junctions formed by the phase-slip lines. Our results suggest a new approach to induce superconductivity in a TI, a novel route to realizing highly-transparent topological Josephson junctions, and show how the response of superconducting systems to microwave radiation can be used to infer the dynamics of phase-slip lines. △ Less

Submitted 30 December, 2022; originally announced January 2023.

Simulating noise on a quantum processor: interactions between a qubit and resonant two-level system bath

Authors: Yu** Cho, Dipti Jasrasaria, Keith G. Ray, Daniel M. Tennant, Vincenzo Lordi, Jonathan L DuBois, Yaniv J. Rosen

Abstract: Material defects fundamentally limit the coherence times of superconducting qubits, and manufacturing completely defect-free devices is not yet possible. Therefore, understanding the interactions between defects and a qubit in a real quantum processor design is essential. We build a model that incorporates the standard tunneling model, the electric field distributions in the qubit, and open quantu… ▽ More Material defects fundamentally limit the coherence times of superconducting qubits, and manufacturing completely defect-free devices is not yet possible. Therefore, understanding the interactions between defects and a qubit in a real quantum processor design is essential. We build a model that incorporates the standard tunneling model, the electric field distributions in the qubit, and open quantum system dynamics, and draws from the current understanding of two-level system (TLS) theory. Specifically, we start with one million TLSs distributed on the surface of a qubit and pick the 200 systems that are most strongly coupled to the qubit. We then perform a full Lindbladian simulation that explicitly includes the coherent coupling between the qubit and the TLS bath to model the time dependent density matrix of resonant TLS defects and the qubit. We find that the 200 most strongly coupled TLSs can accurately describe the qubit energy relaxation time. This work confirms that resonant TLSs located in areas where the electric field is strong can significantly affect the qubit relaxation time, even if they are located far from the Josephson junction. Similarly, a strongly-coupled resonant TLS located in the Josephson junction does not guarantee a reduced qubit relaxation time if a more strongly coupled TLS is far from the Josephson junction. In addition to the coupling strengths between TLSs and the qubit, the model predicts that the geometry of the device and the TLS relaxation time play a significant role in qubit dynamics. Our work can provide guidance for future quantum processor designs with improved qubit coherence times. △ Less

Submitted 7 June, 2023; v1 submitted 15 November, 2022; originally announced November 2022.

Comments: 8 pages, 5 figures

Journal ref: Quantum Sci. Technol. 8 045023 (2023)

How Correlated Adsorbate Dynamics on Realistic Substrates Can Give Rise to 1/ω Electric-Field Noise in Surface Ion Traps

Authors: Benjamin Foulon, Keith G. Ray, Chang-Eun Kim, Yuan Liu, Brenda M. Rubenstein, Vincenzo Lordi

Abstract: Ion traps are promising architectures for implementing scalable quantum computing, but they suffer from excessive "anomalous" heating that prevents their full potential from being realized. This heating, which is orders of magnitude larger than that expected from Johnson-Nyquist noise, results in ion motion that leads to decoherence and reduced fidelity in quantum logic gates. The exact origin of… ▽ More Ion traps are promising architectures for implementing scalable quantum computing, but they suffer from excessive "anomalous" heating that prevents their full potential from being realized. This heating, which is orders of magnitude larger than that expected from Johnson-Nyquist noise, results in ion motion that leads to decoherence and reduced fidelity in quantum logic gates. The exact origin of anomalous heating is an open question, but experiments point to adsorbates on trap electrodes as a likely source. Many different models of anomalous heating have been proposed, but these models have yet to pinpoint the atomistic origin of the experimentally-observed $1/ω$ electric field noise scaling observed in ion traps at frequencies between 0.1-10 MHz. In this work, we perform the first computational study of the ion trap electric field noise produced by the motions of multiple monolayers of adsorbates described by first principles potentials. In so doing, we show that correlated adsorbate motions play a definitive role in producing $1/ω$ noise and identify candidate collective adsorbate motions, including translational and rotational motions of adsorbate patches and multilayer exchanges, that give rise to $1/ω$ scaling at the MHz frequencies typically employed in ion traps. These results demonstrate that multi-adsorbate systems, even simple ones, can give rise to a set of activated motions that can produce the $1/ω$ noise observed in ion traps and that collective, rather than individual, adsorbate motions are much more likely to give rise to low-frequency heating. △ Less

Submitted 2 July, 2021; originally announced July 2021.

Changes in electric-field noise due to thermal transformation of a surface ion trap

Authors: Maya Berlin-Udi, Clemens Matthiesen, P. N. Thomas Lloyd, Alberto M. Alonso, Crystal Noel, Benjamin Saarel, Christine A. Orme, Chang-Eun Kim, Art J. Nelson, Keith G. Ray, Vincenzo Lordi, Hartmut Häffner

Abstract: We aim to illuminate how the microscopic properties of a metal surface map to its electric-field noise characteristics. In our system, prolonged heat treatments of a metal film can induce a rise in the magnitude of the electric-field noise generated by the surface of that film. We refer to this heat-induced rise in noise magnitude as a thermal transformation. The underlying physics of this thermal… ▽ More We aim to illuminate how the microscopic properties of a metal surface map to its electric-field noise characteristics. In our system, prolonged heat treatments of a metal film can induce a rise in the magnitude of the electric-field noise generated by the surface of that film. We refer to this heat-induced rise in noise magnitude as a thermal transformation. The underlying physics of this thermal transformation process is explored through a series of heating, milling, and electron treatments performed on a single surface ion trap. Between these treatments, $^{40}$Ca$^+$ ions trapped 70~$μ$m above the surface of the metal are used as detectors to monitor the electric-field noise at frequencies close to 1~MHz. An Auger spectrometer is used to track changes in the composition of the contaminated metal surface. With these tools we investigate contaminant deposition, chemical reactions, and atomic restructuring as possible drivers of thermal transformations. △ Less

Submitted 15 July, 2022; v1 submitted 7 March, 2021; originally announced March 2021.

vdW-corrected density functional study of electric field noise heating in ion traps caused by electrode surface adsorbates

Authors: Keith G. Ray, Brenda M. Rubenstein, Wenze Gu, Vincenzo Lordi

Abstract: In order to realize the full potential of ion trap quantum computers, an improved understanding is required of the motional heating that trapped ions experience. Experimental studies of the temperature-, frequency-, and ion--electrode distance-dependence of the electric field noise responsible for motional heating, as well as the noise before and after ion bombardment cleaning of trap electrodes,… ▽ More In order to realize the full potential of ion trap quantum computers, an improved understanding is required of the motional heating that trapped ions experience. Experimental studies of the temperature-, frequency-, and ion--electrode distance-dependence of the electric field noise responsible for motional heating, as well as the noise before and after ion bombardment cleaning of trap electrodes, suggest that fluctuations of adsorbate dipoles are a likely source of so-called `anomalous heating,' or motional heating of the trapped ions at a rate much higher than the Johnson noise limit. Previous computational studies have investigated how the fluctuation of model adsorbate dipoles affects anomalous heating. However, the way in which specific adsorbates affect the electric field noise has not yet been examined, and an electric dipole model employed in previous studies is only accurate for a small subset of possible adsorbates. Here, we analyze the behavior of both in-plane and out-of-plane vibrational modes of fifteen adsorbate--electrode combinations within the independent fluctuating dipole model, utilizing accurate first principles computational methods to determine the surface-induced dipole moments. We find the chemical specificity of the adsorbate can change the electric field noise by seven orders of magnitude and specifically that soft in-plane modes of weakly-adsorbed hydrocarbons produce the greatest noise and ion heating. We discuss the dynamics captured by the fluctuating dipole model, namely the adsorbate dependent turn-on temperature and electric field noise magnitude, and also discuss the model's failure to reproduce the measured 1/$ω$ noise frequency scaling with a single adsorbate species. We suggest future research directions for improved, quantitatively predictive models based on extensions of the present framework to multiple interacting adsorbates. △ Less

Submitted 11 April, 2019; v1 submitted 24 October, 2018; originally announced October 2018.