Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
Authors:
N. Cartiglia,
A. Staiano,
V. Sola,
R. Arcidiacono,
R. Cirio,
F. Cenna,
M. Ferrero,
V. Monaco,
R. Mulargia,
M. Obertino,
F. Ravera,
R. Sacchi,
A. Bellora,
S. Durando,
M. Mandurrino,
N. Minafra,
V. Fadeyev,
P. Freeman,
Z. Galloway,
E. Gkougkousis,
H. Grabas,
B. Gruey,
C. A. Labitan,
R. Losakul,
Z. Luce
, et al. (18 additional authors not shown)
Abstract:
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below th…
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In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 μm) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.
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Submitted 3 January, 2017; v1 submitted 30 August, 2016;
originally announced August 2016.
Trap** in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trap** rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trap** rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trap** rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
