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Terahertz emission from $α$-W/CoFe epitaxial spintronic emitters
Authors:
Venkatesh Mottamchetty,
Rimantas Brucas,
Anna L. Ravensburg,
Rahul Gupta,
Arne Roos,
Cheuk Wai Tai,
Vassilios Kapaklis,
Peter Svedlindh
Abstract:
We report efficient terahertz (THz) generation in epitaxial $α$-W/Co$_6$0Fe$_4$0 spintronic emitters. Two types of emitters have been investigated; epitaxial $α$-W(110)/Co$_6$0Fe$_4$0(110) and $α$-W(001)/Co$_6$0Fe$_4$0(001) deposited on single crystalline Al$_2$O$_3$(11-20) and MgO(001) substrates, respectively. The generated THz radiation is about 10% larger for $α$-W(110)/Co$_6$0Fe$_4$0(110) gro…
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We report efficient terahertz (THz) generation in epitaxial $α$-W/Co$_6$0Fe$_4$0 spintronic emitters. Two types of emitters have been investigated; epitaxial $α$-W(110)/Co$_6$0Fe$_4$0(110) and $α$-W(001)/Co$_6$0Fe$_4$0(001) deposited on single crystalline Al$_2$O$_3$(11-20) and MgO(001) substrates, respectively. The generated THz radiation is about 10% larger for $α$-W(110)/Co$_6$0Fe$_4$0(110) grown on single crystalline Al$_2$O$_3$(11-20), which is explained by the fact that the $α$-W(110)/Co$_6$0Fe$_4$0(110) interface for this emitter is more transparent to the spin current due to the presence of Angstrom-scale interface intermixing at the W/CoFe interface. Our results also reveal that the generation of THz radiation is larger when pum** with the laser light from the substrate side, which is explained by a larger part of the laser light due to interference effects in the film stack being absorbed in the ferromagnetic Co$_6$0Fe$_4$0 layer in this measurement configuration.
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Submitted 18 January, 2024;
originally announced January 2024.
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The effect of iron layer thickness on the interlayer exchange coupling in Fe/MgO (001) superlattices
Authors:
Anna L. Ravensburg,
Matías P. Grassi,
Björgvin Hjövarsson,
Vassilios Kapaklis
Abstract:
We describe the effect of the Fe layer thickness on the antiferromagnetic interlayer exchange coupling in [Fe/MgO]$_N$ superlattices. An increase in coupling strength with increasing Fe layer thickness is observed, which highlights the need of including the extension of both the layers when discussing the interlayer exchange coupling in superlattices.
We describe the effect of the Fe layer thickness on the antiferromagnetic interlayer exchange coupling in [Fe/MgO]$_N$ superlattices. An increase in coupling strength with increasing Fe layer thickness is observed, which highlights the need of including the extension of both the layers when discussing the interlayer exchange coupling in superlattices.
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Submitted 23 April, 2024; v1 submitted 16 January, 2024;
originally announced January 2024.
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Boundary-induced phase in epitaxial iron layers
Authors:
Anna L. Ravensburg,
Mirosław Werwiński,
Justyna Rychły-Gruszecka,
Justyn Snarski-Adamski,
Anna Elsukova,
Per O. Å. Persson,
Ján Rusz,
Rimantas Brucas,
Björgvin Hjövarsson,
Peter Svedlindh,
Gunnar K. Pálsson,
Vassilios Kapaklis
Abstract:
We report the discovery of a boundary-induced body-centered tetragonal (bct) iron phase in thin films deposited on MgAl$_{2}$O$_{4}$ ($001$) substrates. We present evidence for this phase using detailed x-ray analysis and ab-initio density functional theory calculations. A lower magnetic moment and a rotation of the easy magnetisation direction are observed, as compared to body-centered cubic (bcc…
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We report the discovery of a boundary-induced body-centered tetragonal (bct) iron phase in thin films deposited on MgAl$_{2}$O$_{4}$ ($001$) substrates. We present evidence for this phase using detailed x-ray analysis and ab-initio density functional theory calculations. A lower magnetic moment and a rotation of the easy magnetisation direction are observed, as compared to body-centered cubic (bcc) iron. Our findings expand the range of known crystal and magnetic phases of iron, providing valuable insights for the development of heterostructure devices using ultra-thin iron layers.
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Submitted 11 January, 2024;
originally announced January 2024.
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GENL: An extensible fitting program for Laue oscillations
Authors:
Anna L. Ravensburg,
Johan Bylin,
Gunnar K. Pálsson,
Vassilios Kapaklis
Abstract:
GenL is a flexible program that can be used to simulate and/or fit x-ray diffraction data from epitaxial thin films exhibiting Laue oscillations. It utilizes differential evolution within a genetic algorithm for the fitting of data and is based on the kinematic theory of diffraction. Effects of polarization, absorption, the Lorentz factor, as well as instrumental resolution and lattice vibrations…
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GenL is a flexible program that can be used to simulate and/or fit x-ray diffraction data from epitaxial thin films exhibiting Laue oscillations. It utilizes differential evolution within a genetic algorithm for the fitting of data and is based on the kinematic theory of diffraction. Effects of polarization, absorption, the Lorentz factor, as well as instrumental resolution and lattice vibrations are taken into account. Useful parameters that can be extracted after fitting include: atomic interplanar spacings, number of coherently scattering atomic planes, strain profiles along the film thickness, and crystal roughness. The program has been developed in MATLAB and employs a graphical user interface. The deployment strategy is twofold whereby the software can either be obtained in source code form and executed within the MATLAB environment, or as a pre-compiled binary for those who prefer not to run it within MATLAB. Finally, GenL can be easily extended to simulate multilayered film systems, superlattices, and films with atomic steps. The program is released under the GNU General Public Licence.
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Submitted 12 January, 2024; v1 submitted 20 October, 2023;
originally announced October 2023.
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Epitaxy enhancement in oxide/tungsten heterostructures by harnessing the interface adhesion
Authors:
Anna L. Ravensburg,
Rimantas Brucas,
Denis Music,
Lennart Spode,
Gunnar K. Pálsson,
Peter Svedlindh,
Vassilios Kapaklis
Abstract:
The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different metal oxide substrates, Al$_{2}$O$_{3}$ ($11\bar{2}0$) and MgO ($001$). We demonstrate that despite a significant mismatch, enhanced crystal quality is observed f…
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The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different metal oxide substrates, Al$_{2}$O$_{3}$ ($11\bar{2}0$) and MgO ($001$). We demonstrate that despite a significant mismatch, enhanced crystal quality is observed for tungsten grown on the sapphire substrates. This is promoted by stronger adhesion and chemical bonding with sapphire compared to magnesium oxide, along with the restructuring of the tungsten layers close to the interface. The latter is supported by ab initio calculations using density functional theory. Finally, we demonstrate the growth of magnetic heterostructures consisting of high-quality tungsten layers in combination with ferromagnetic CoFe layers, which are relevant for spintronic applications.
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Submitted 30 November, 2023; v1 submitted 21 June, 2023;
originally announced June 2023.
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Influence of misfit strain on the physical properties of Fe thin films
Authors:
Anna L. Ravensburg,
Gunnar K. Pálsson,
Merlin Pohlit,
Björgvin Hjörvarsson,
Vassilios Kapaklis
Abstract:
We investigate the growth of thin Fe layers on MgAl$_2$O$_4$~(001) and MgO~(001) substrates using dc magnetron sputtering. The crystal quality of Fe layers deposited on MgAl$_2$O$_4$ is found to be substantially higher as compared to Fe grown on MgO substrates. The effects of the crystal quality on the magnetic and electronic transport properties are discussed.
We investigate the growth of thin Fe layers on MgAl$_2$O$_4$~(001) and MgO~(001) substrates using dc magnetron sputtering. The crystal quality of Fe layers deposited on MgAl$_2$O$_4$ is found to be substantially higher as compared to Fe grown on MgO substrates. The effects of the crystal quality on the magnetic and electronic transport properties are discussed.
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Submitted 3 October, 2022; v1 submitted 5 April, 2022;
originally announced April 2022.
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Enhanced THz emission from spintronic Fe/Pt emitters through crystal growth optimization
Authors:
Agne Ciuciulkaite,
Oliver Gueckstock,
Anna Ravensburg,
Merlin Pohlit,
Tobias Warnatz,
Tobias Kampfrath,
Georg Schmidt,
Evangelos Th. Papaioannou,
Vassilios Kapaklis
Abstract:
We investigate the THz emission characteristics of ferromagnetic/non-magnetic metallic heterostructures, focusing on thin Fe/Pt bilayers. In particular, we report on the impact of optimized crystal growth of the epitaxial Fe layers on the THz emission amplitude and spectral bandwidth. We demonstrate an enhancement of the emitted intensity along with an expansion of the emission bandwidth. Both are…
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We investigate the THz emission characteristics of ferromagnetic/non-magnetic metallic heterostructures, focusing on thin Fe/Pt bilayers. In particular, we report on the impact of optimized crystal growth of the epitaxial Fe layers on the THz emission amplitude and spectral bandwidth. We demonstrate an enhancement of the emitted intensity along with an expansion of the emission bandwidth. Both are related to reduced spin scattering and higher interface transmission. Our work provides a pathway for devicing optimal spintronic THz emitters based on epitaxial Fe. It also highlights how THz emission measurements can be utilized to characterize the changes in out-of-equilibrium spin current dynamics in metallic heterostructures, driven by subtle structural refinement.
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Submitted 23 November, 2020; v1 submitted 23 October, 2020;
originally announced October 2020.
