Investigation of the Electrical Conduction Mechanisms in P-type Amorphous Germanium (a-Ge) Used as a-Ge Contacts for Ge Detectors
Authors:
S. Bhattarai,
R. Panth,
W. -Z. Wei,
H. Mei,
D. -M. Mei,
M. S. Raut,
P. Acharya,
W. -J. Wang
Abstract:
Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hop** parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature-dependent hop** distance and hop** energy are…
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Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hop** parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature-dependent hop** distance and hop** energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hop** energy in a-Ge increases as temperature increases while the hop** distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $2.13^{-0.05}_{+0.07} A^\circ$ to $5.07^{-0.83}_{+2.58}A^\circ$, depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.
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Submitted 7 September, 2020; v1 submitted 17 February, 2020;
originally announced February 2020.
