Low-Energy Solar Neutrino Detection Utilizing Advanced Germanium Detectors
Authors:
S. Bhattarai,
D. -M. Mei,
M. -S. Raut
Abstract:
We explore the possibility to use advanced germanium (Ge) detectors as a low-energy solar neutrino observatory by means of neutrino-nucleus elastic scattering. A Ge detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a novel technology with experimental sensitivity for detecting low-energy solar neutrinos. Ge internal charge amplifica…
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We explore the possibility to use advanced germanium (Ge) detectors as a low-energy solar neutrino observatory by means of neutrino-nucleus elastic scattering. A Ge detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a novel technology with experimental sensitivity for detecting low-energy solar neutrinos. Ge internal charge amplification (GeICA) will amplify the charge carriers induced by neutrino interacting with Ge atoms through emission of phonons. It is those phonons that will create charge carriers through the ionization of impurities to achieve an extremely low energy threshold of $\sim$0.01 eV. We demonstrate the phonon absorption, excitation, and ionization probability of impurities in a Ge detector with impurity levels of 3$\times$10$^{10}$ cm$^{-3}$, 9$\times$10$^{10}$ cm$^{-3}$, and 2$\times$10$^{11}$ cm$^{-3}$. We present the sensitivity of such a Ge experiment for detecting solar neutrinos in the low-energy region. We show that, if GeICA technology becomes available, then a new opportunity arises to observe $pp$ and 7Be solar neutrinos. Such a novel detector with only 1 kg of high-purity Ge will give $\sim$ 10 events per year for $pp$ neutrinos and $\sim$ 5 events per year for 7Be neutrinos with a detection energy threshold of 0.01 eV.
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Submitted 2 September, 2021; v1 submitted 28 April, 2021;
originally announced April 2021.
Characterization of High-Purity Germanium (Ge) Crystals for Develo** Novel Ge Detectors
Authors:
M. -S. Raut,
H. Mei,
D. -M. Mei,
S. Bhattarai,
W. -Z. Wei,
R. Panda,
P. Acharya,
G. -J. Wang
Abstract:
High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the…
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High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the samples used in conducting the Hall Effect measurements. We conduct a systematic study using four samples cut from the same location in a HPGe crystal made into different sized ohmic contacts or different geometries to study the variation of the measured parameters from the Hall Effect system. The results are compared to the C-V measurements provided by the Ge detector made from the same crystal. We report the systematic errors involved with the Hall Effect system and find a reliable technique that minimizes the systematic error to be only a few percent from the Hall Effect measurements.
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Submitted 22 July, 2020; v1 submitted 17 February, 2020;
originally announced February 2020.
