Showing 1–12 of 12 results for author: Ratsch, C

Estimating Residential Solar Potential Using Aerial Data

Authors: Ross Goroshin, Alex Wilson, Andrew Lamb, Betty Peng, Brandon Ewonus, Cornelius Ratsch, Jordan Raisher, Marisa Leung, Max Burq, Thomas Colthurst, William Rucklidge, Carl Elkin

Abstract: Project Sunroof estimates the solar potential of residential buildings using high quality aerial data. That is, it estimates the potential solar energy (and associated financial savings) that can be captured by buildings if solar panels were to be installed on their roofs. Unfortunately its coverage is limited by the lack of high resolution digital surface map (DSM) data. We present a deep learnin… ▽ More Project Sunroof estimates the solar potential of residential buildings using high quality aerial data. That is, it estimates the potential solar energy (and associated financial savings) that can be captured by buildings if solar panels were to be installed on their roofs. Unfortunately its coverage is limited by the lack of high resolution digital surface map (DSM) data. We present a deep learning approach that bridges this gap by enhancing widely available low-resolution data, thereby dramatically increasing the coverage of Sunroof. We also present some ongoing efforts to potentially improve accuracy even further by replacing certain algorithmic components of the Sunroof processing pipeline with deep learning. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Journal ref: ICLR 2023 - Tackling Climate Change with Machine Learning Workshop

Line defects in Graphene: How do** affects the electronic and mechanical properties

Authors: Daniel Berger, Christian Ratsch

Abstract: Graphene and carbon nanotubes have extraordinary mechanical and electronic properties. Intrinsic line defects such as local non-hexagonal reconstructions or grain boundaries, however, significantly reduce the tensile strength, but feature exciting electronic properties. Here, we address the properties of line defects in graphene from first-principles on the level of full-potential density-function… ▽ More Graphene and carbon nanotubes have extraordinary mechanical and electronic properties. Intrinsic line defects such as local non-hexagonal reconstructions or grain boundaries, however, significantly reduce the tensile strength, but feature exciting electronic properties. Here, we address the properties of line defects in graphene from first-principles on the level of full-potential density-functional theory, and assess do** as one strategy to strengthen such materials. We carefully disentangle the global and local effect of do** by comparing results from the virtual crystal approximation with those from local substitution of chemical species, in order to gain a detailed understanding of the breaking and stabilization mechanisms. We find that n-type do** or local substitution with nitrogen increases the ultimate tensile strength significantly. In particular, it can stabilize the defects beyond the ultimate tensile strength of the pristine material. We therefore propose this as a key strategy to strengthen graphenic materials. Furthermore, we find that do** and/or applying external stress lead to tunable and technologically interesting metal/semi-conductor transitions. △ Less

Submitted 25 January, 2016; originally announced January 2016.

Modeling the Elastic Energy of Alloys: Potential Pitfalls of Continuum Treatments

Authors: Arvind Baskaran, Christian Ratsch, Peter Smereka

Abstract: Some issues that arise when modeling elastic energy for binary alloys are discussed within the context of a Keating model and density functional calculations. The Keating model is based on atomistic modeling of elastic interactions in binary alloy using harmonic springs with species dependent equilibrium lengths. It is demonstrated that the continuum limit for the strain field are the usual equati… ▽ More Some issues that arise when modeling elastic energy for binary alloys are discussed within the context of a Keating model and density functional calculations. The Keating model is based on atomistic modeling of elastic interactions in binary alloy using harmonic springs with species dependent equilibrium lengths. It is demonstrated that the continuum limit for the strain field are the usual equations of linear elasticity for alloys and that they correctly capture the coarse-grained displacement field. In addition, it is established that Euler-Lagrange equation of the continuum limit of the elastic energy will yield the same strain field equation. However, a direct calculation of the elastic energy of the atomistic model reveals that the continuum expression for the elastic energy is both qualitatively and quantitatively incorrect. This is because it does not take atomistic scale compositional non-uniformity into account. Importantly, we also shows that finely mixed alloys tend to have more elastic energy than segregated systems, which is the opposite of predictions by some continuum theories. It is also shown that for strained thin films the traditionally used effective misfit for alloys systematically underestimate the strain energy. In some models, this drawback is handled by including an elastic contribution to the enthalpy of mixing which is characterized in terms of the continuum concentration. The direct calculation of the atomistic model reveals that this approach suffers serious difficulties. It is demonstrated that elastic contribution to the enthalpy of mixing is non-isotropic and scale dependent. It also shown that such effects are present in density-functional theory calculations for the Si/Ge and Ag/Pt systems. This work demonstrates that it is critical to include the microscopic arrangements in any elastic model to achieve even qualitatively correct behavior. △ Less

Submitted 4 November, 2015; v1 submitted 20 October, 2014; originally announced October 2014.

Journal ref: Phys. Rev. E 92, 062406 (2015)

Ab-Initio calculations of binding energy of In and Ga adatoms on three GaAs(111)A surface reconstructions

Authors: J. N. Shapiro, D. L. Huffaker, C. Ratsch

Abstract: Calculations of the potential energy surface for tracer Ga and In adatoms above three GaAs (111)A surface reconstructions are presented in order to understand the growth conditions required to form axial heterostructures in GaAs/InGaAs nano-pillars. In all calculations the Ga adatom has a stronger bond energy to the surface than the In adatom. The diffusion barriers for Ga adatoms are 140meV large… ▽ More Calculations of the potential energy surface for tracer Ga and In adatoms above three GaAs (111)A surface reconstructions are presented in order to understand the growth conditions required to form axial heterostructures in GaAs/InGaAs nano-pillars. In all calculations the Ga adatom has a stronger bond energy to the surface than the In adatom. The diffusion barriers for Ga adatoms are 140meV larger than for In adatoms on the Ga vacancy surface, but they are comparable on the As trimer surface. Also the binding energy for an In adatom is closer to that of a Ga adatom on the As trimer surface. We conclude that the As trimer surface is preferable for adsorption of In and thus for selective formation of hetero-interfaces on (111) facets. This work helps explain the recent successful formation of axial GaAs/InGaAs hetero-interfaces in catalyst free nano-pillars. △ Less

Submitted 9 February, 2011; originally announced February 2011.

Comments: 4 pages, 5 figures, 1 table

Level Set Approach to Reversible Epitaxial Growth

Authors: M. Petersen, C. Ratsch, R. E. Caflisch, A. Zangwill

Abstract: We generalize the level set approach to model epitaxial growth to include thermal detachment of atoms from island edges. This means that islands do not always grow and island dissociation can occur. We make no assumptions about a critical nucleus. Excellent quantitative agreement is obtained with kinetic Monte Carlo simulations for island densities and island size distributions in the submonolay… ▽ More We generalize the level set approach to model epitaxial growth to include thermal detachment of atoms from island edges. This means that islands do not always grow and island dissociation can occur. We make no assumptions about a critical nucleus. Excellent quantitative agreement is obtained with kinetic Monte Carlo simulations for island densities and island size distributions in the submonolayer regime. △ Less

Submitted 14 November, 2001; originally announced November 2001.

Comments: 7 pages, 9 figures

Density-functional theory calculations of hop** rates of surface diffusion

Authors: C. Ratsch, M. Scheffler

Abstract: Using density-functional theory we compute the energy barriers and attempt frequencies for surface diffusion of Ag on Ag(111) with different lattice constants, and on an Ag adsorbate monolayer on Pt(111). We find that the attempt frequency is of the order of 1 THz for all the systems studied. This is in contrast to the so-called compensation effect, and to recent experimental studies. Our analys… ▽ More Using density-functional theory we compute the energy barriers and attempt frequencies for surface diffusion of Ag on Ag(111) with different lattice constants, and on an Ag adsorbate monolayer on Pt(111). We find that the attempt frequency is of the order of 1 THz for all the systems studied. This is in contrast to the so-called compensation effect, and to recent experimental studies. Our analysis suggests that the applicability of simple (commonly used) scaling laws for the determination of diffusion and growth parameters is often not valid. △ Less

Submitted 17 November, 1998; originally announced November 1998.

Comments: 4 pages, 1 figures, to be published in Phys. Rev. B (Nov. 15, 1998). Other related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.html

Study of Strain and Temperature Dependence of Metal Epitaxy

Authors: C. Ratsch, P. Ruggerone, M. Scheffler

Abstract: Metallic films are important in catalysis, magneto-optic storage media, and interconnects in microelectronics, and it is crucial to predict and control their morphologies. The evolution of a growing crystal is determined by the behavior of each individual atom, but technologically relevant structures have to be described on a time scale of the order of (at least) tenths of a second and on a leng… ▽ More Metallic films are important in catalysis, magneto-optic storage media, and interconnects in microelectronics, and it is crucial to predict and control their morphologies. The evolution of a growing crystal is determined by the behavior of each individual atom, but technologically relevant structures have to be described on a time scale of the order of (at least) tenths of a second and on a length scale of nanometers. An adequate theory of growth should describe the atomistic level on very short time scales (femtoseconds), the formation of small islands (microseconds), as well as the evolution of mesoscopic and macroscopic structures (tenths of seconds). The development of efficient algorithms combined with the availability of cheaper and faster computers has turned density functional theory (DFT) into a reliable and feasible tool to study the microscopic aspects of growth phenomena (and many other complex processes in materials science, condensed matter physics, and chemistry). In this paper some DFT results for diffusion properties on metallic surfaces are presented. Particularly, we will discuss the current understanding of the influences of strain on the diffusion (energy barrier and prefactor) of a single adatom on a substrate. A DFT total energy calculation by its nature is primarily a static calculation. An accurate way to describe the spatial and temporal development of a growing crystal is given by kinetic Monte Carlo (KMC). We will describe the method and its combination with microscopic parameters obtained from ab initio calculations. It is shown that realistic ab initio kinetic Monte Carlo simulations are able to predict an evolving mesoscopic structure on the basis of microscopic details. △ Less

Submitted 26 September, 1997; originally announced September 1997.

Comments: 25 pages, 6 figures, In: ``Morphological Organisation during Epitaxial Growth and Removal'', Eds. Z. Zhang, M. Lagally. World Scientific, Singapore 1998. other related publications can be found at http://www.rz-berlin.mpg.de/th/paper.html

Density Functional Theory of Epitaxial Growth of Metals

Authors: P. Ruggerone, C. Ratsch, M. Scheffler

Abstract: This chapter starts with a summary of the atomistic processes that occur during epitaxy. We then introduce density functional theory (DFT) and describe its implementation into state-of-the-art computations of complex processes in condensed matter physics and materials science. In particular we discuss how DFT can be used to calculate parameters of microscopic processes such as adsorption and sur… ▽ More This chapter starts with a summary of the atomistic processes that occur during epitaxy. We then introduce density functional theory (DFT) and describe its implementation into state-of-the-art computations of complex processes in condensed matter physics and materials science. In particular we discuss how DFT can be used to calculate parameters of microscopic processes such as adsorption and surface diffusion, and how they can be used to study the macroscopic time and length scales of realistic growth conditions. This meso- and macroscopic regime is described by the ab initio kinetic Monte Carlo approach. We discuss several specific theoretical studies that highlight the importance of the different diffusion mechanisms at step edges, the role of surfactants, and the influence of surface stress. The presented results are for specific materials (namely silver and aluminum), but they are explained in simple physical pictures suggesting that they also hold for other systems. △ Less

Submitted 11 February, 1997; originally announced February 1997.

Comments: 55 pages, 20 figures, to be published "Growth of Ultrathin Epitaxial Layers", The Chemical Physics of Soild Surfaces, Vol. 8, Eds D. A. King and D. P. Woodruff (Elsevier Science, Amsterdam, 1997)

Density-Functional Theory of Surface Diffusion and Epitaxial Growth of Metals

Authors: C. Ratsch, P. Ruggerone, M. Scheffler

Abstract: This paper gives a summary of basic concepts of density-functional theory (DFT) and its use in state-of-the-art computations of complex processes in condensed matter physics and materials science. In particular we discuss how microscopic growth parameters can be determined by DFT and how on this basis macroscopic phenomena can be described. To reach the time and length scales of realistic growth… ▽ More This paper gives a summary of basic concepts of density-functional theory (DFT) and its use in state-of-the-art computations of complex processes in condensed matter physics and materials science. In particular we discuss how microscopic growth parameters can be determined by DFT and how on this basis macroscopic phenomena can be described. To reach the time and length scales of realistic growth conditions, DFT results are complemented by kinetic Monte Carlo simulations. △ Less

Submitted 5 February, 1997; originally announced February 1997.

Comments: 17 pages, 7 figures, In: ``Surface Diffusion: Atomistic and Collective Processes'', Ed. M. Tringides. Plenum Press, New York 1997

Strain-Dependence of Surface Diffusion: Ag on Ag(111) and Pt(111)

Authors: C. Ratsch, A. P. Seitsonen, M. Scheffler

Abstract: Using density-functional theory with the local-density approximation and the generalized gradient approximation we compute the energy barriers for surface diffusion for Ag on Pt(111), Ag on one monolayer of Ag on Pt(111), and Ag on Ag(111). The diffusion barrier for Ag on Ag(111) is found to increase linearly with increasing lattice constant. We also discuss the reconstruction that has been foun… ▽ More Using density-functional theory with the local-density approximation and the generalized gradient approximation we compute the energy barriers for surface diffusion for Ag on Pt(111), Ag on one monolayer of Ag on Pt(111), and Ag on Ag(111). The diffusion barrier for Ag on Ag(111) is found to increase linearly with increasing lattice constant. We also discuss the reconstruction that has been found experimentally when two Ag layers are deposited on Pt(111). Our calculations explain why this strain driven reconstruction occurs only after two Ag layers have been deposited. △ Less

Submitted 3 February, 1997; originally announced February 1997.

Comments: 4 pages, 3 figures, Phys. Rev. B 55 (1997), in press

Submonolayer Epitaxy Without A Critical Nucleus

Authors: C. Ratsch, P. Šmilauer, A. Zangwill, D. D. Vvedensky

Abstract: The nucleation and growth of two--dimensional islands is studied with Monte Carlo simulations of a pair--bond solid--on--solid model of epitaxial growth. The conventional description of this problem in terms of a well--defined critical island size fails because no islands are absolutely stable against single atom detachment by thermal bond breaking. When two--bond scission is negligible, we find… ▽ More The nucleation and growth of two--dimensional islands is studied with Monte Carlo simulations of a pair--bond solid--on--solid model of epitaxial growth. The conventional description of this problem in terms of a well--defined critical island size fails because no islands are absolutely stable against single atom detachment by thermal bond breaking. When two--bond scission is negligible, we find that the ratio of the dimer dissociation rate to the rate of adatom capture by dimers uniquely indexes both the island size distribution scaling function and the dependence of the island density on the flux and the substrate temperature. Effective pair-bond model parameters are found that yield excellent quantitative agreement with scaling functions measured for Fe/Fe(001). △ Less

Submitted 21 March, 1995; originally announced March 1995.

Comments: 8 pages, Postscript files (the paper and Figs. 1-3), uuencoded, compressed and tarred. Surface Science Letters, in press.

Report number: IC-DDV-94-009

Scaling of Heteroepitaxial Island Sizes

Authors: C. Ratsch, A. Zangwill, P. Šmilauer

Abstract: Monte Carlo simulations of an atomistic solid-on-solid model are used to study the effect of lattice misfit on the distribution of two-dimensional islands sizes as a function of coverage $Θ$ in the submonolayer aggregation regime of epitaxial growth. Misfit promotes the detachment of atoms from the perimeter of large pseudomorphic islands and thus favors their dissolution into smaller islands th… ▽ More Monte Carlo simulations of an atomistic solid-on-solid model are used to study the effect of lattice misfit on the distribution of two-dimensional islands sizes as a function of coverage $Θ$ in the submonolayer aggregation regime of epitaxial growth. Misfit promotes the detachment of atoms from the perimeter of large pseudomorphic islands and thus favors their dissolution into smaller islands that relieve strain more efficiently. The number density of islands composed of $s$ atoms exhibits scaling in the form \mbox{$N_s(Θ) \sim Θ/ \langle s \rangle^2 \, g(s/\langle s \rangle$)} where $\langle s \rangle$ is the average island size. Unlike the case of homoepitaxy, a rate equation theory based on this observation leads to qualitatively different behavior than observed in the simulations. △ Less

Submitted 15 June, 1994; originally announced June 1994.

Comments: 10 pages, LaTeX 2.09, IC-DDV-94-001