Showing 1–5 of 5 results for author: Rathore, G

DeepBbox: Accelerating Precise Ground Truth Generation for Autonomous Driving Datasets

Authors: Govind Rathore, Wan-Yi Lin, Ji Eun Kim

Abstract: Autonomous driving requires various computer vision algorithms, such as object detection and tracking.Precisely-labeled datasets (i.e., objects are fully contained in bounding boxes with only a few extra pixels) are preferred for training such algorithms, so that the algorithms can detect exact locations of the objects. However, it is very time-consuming and hence expensive to generate precise lab… ▽ More Autonomous driving requires various computer vision algorithms, such as object detection and tracking.Precisely-labeled datasets (i.e., objects are fully contained in bounding boxes with only a few extra pixels) are preferred for training such algorithms, so that the algorithms can detect exact locations of the objects. However, it is very time-consuming and hence expensive to generate precise labels for image sequences at scale. In this paper, we propose DeepBbox, an algorithm that corrects loose object labels into right bounding boxes to reduce human annotation efforts. We use Cityscapes dataset to show annotation efficiency and accuracy improvement using DeepBbox. Experimental results show that, with DeepBbox,we can increase the number of object edges that are labeled automatically (within 1\% error) by 50% to reduce manual annotation time. △ Less

Submitted 29 August, 2019; originally announced September 2019.

Comments: accepted by ITSC 2019

A short note on q-analogue of modified Stancu-Beta operators

Authors: Preeti Sharma Joshi, Ghanshyam Singh Rathore

Abstract: This paper deals with the modified q-Stancu-Beta operators and we have investigated the statistical approximation theorems for these operators with the help of the Korovkin type approximation theorem. We have also established the rates of statistical convergence by means of the modulus of continuity and the Lipschitz type maximal function. Our results show that the rates of convergence of our oper… ▽ More This paper deals with the modified q-Stancu-Beta operators and we have investigated the statistical approximation theorems for these operators with the help of the Korovkin type approximation theorem. We have also established the rates of statistical convergence by means of the modulus of continuity and the Lipschitz type maximal function. Our results show that the rates of convergence of our operators are at least as fast as the classical Stancu-Beta operators. △ Less

Submitted 6 October, 2018; originally announced October 2018.

Comments: arXiv admin note: substantial text overlap with arXiv:1508.05863

Defect mediated changes in structural, optical and photoluminescence properties of Ni substituted CeO2

Authors: Saurabh Tiwari, Gyanendra Rathore, N. Patra, A. K. Yadav, Dibyendu Bhattacharya, S. N. Jha, C. M. Tseng, S. W. Liu, Sajal Biring, Somaditya Sen

Abstract: Local and long range structure, optical and photoluminescence properties of sol-gel synthesized Ce1-xNixO2 nanostructures have been studied. The crystal structure, lattice strain and crystallite size have been analyzed. A decrease in lattice parameter may be attributed to substitution of Ce with smaller Ni ion. UV-Vis measurement is used for studying the effect of Ni substitution on bandgap and di… ▽ More Local and long range structure, optical and photoluminescence properties of sol-gel synthesized Ce1-xNixO2 nanostructures have been studied. The crystal structure, lattice strain and crystallite size have been analyzed. A decrease in lattice parameter may be attributed to substitution of Ce with smaller Ni ion. UV-Vis measurement is used for studying the effect of Ni substitution on bandgap and disorder. The bandgap decreases with Ni substitution and disorder increases. The PL spectra show five major peaks attributed to various defect states. The PL emission decreases with Ni substitution owing to increase in defects which acts as emission quenching centers. The lattice disorder and defects have been studied using Raman spectroscopy. Raman measurement shows that oxygen vacancies related defects are increasing with Ni substitution which causes changes in optical and PL properties. Local structure measurements show that Ni substitution leads to oxygen vacancies which does change host lattice structure notably. Ce4+ to Ce3+ conversion increases with Ni substitution. △ Less

Submitted 6 July, 2018; originally announced July 2018.

Optical Property Study of Charge Compensated (Si, Na) Co-doped ZnO

Authors: Tulika Srivastava, Gaurav Bajpai, Gyanendra Rathore, Prashant Mishra, Shun Wei Liu, Sajal Biring, Somaditya Sen

Abstract: ZnO is co-doped with Na+ and Si4+ in the ratio 2:1. The ratio was intentionally chosen so that net valence state of dopant theoretically matches that of host. This is to avoid dependence in the amount of oxygen vacancies/interstitials arising out of cationic valence state of the dopant. With such a combination, modifications in structural and optical properties do not depend on excess or deficit o… ▽ More ZnO is co-doped with Na+ and Si4+ in the ratio 2:1. The ratio was intentionally chosen so that net valence state of dopant theoretically matches that of host. This is to avoid dependence in the amount of oxygen vacancies/interstitials arising out of cationic valence state of the dopant. With such a combination, modifications in structural and optical properties do not depend on excess or deficit of the dopant charge state. For lower do**, Na+ ions behave as interstitial sites which enhance strain, lattice disorder and thereby creating defects. Formation of interstitial defects leads to reduction in bandgap energy and produce orange-red luminescence. For higher do**, Na+ starts substituting at Zn2+ site which helps in reducing strain and lattice disorder and thereby increases bandgap. Inspite of presence of Si4+ with higher charge, there is a gradual increase in oxygen vacancies due to lattice disorder. △ Less

Submitted 18 March, 2018; originally announced March 2018.

Vanadium substitution: a simple and efficient way to improve UV sensing in ZnO

Authors: Tulika Srivastava, Gaurav Bajpai, Gyanendra Rathore, Sajal Biring, Somaditya Sen

Abstract: UV sensing in pure ZnO is due to oxygen adsorption/desorption process from ZnO surface. Vanadium do** improves UV sensitivity of ZnO. Enhancement in UV sensitivity in doped ZnO is attributed to trap** and de-trap** of electrons at V4+ & V5+-related defect states. An extra electron in the V4+ state is excited under UV illumination while in absence of the same a trap** happens at the V5+ sta… ▽ More UV sensing in pure ZnO is due to oxygen adsorption/desorption process from ZnO surface. Vanadium do** improves UV sensitivity of ZnO. Enhancement in UV sensitivity in doped ZnO is attributed to trap** and de-trap** of electrons at V4+ & V5+-related defect states. An extra electron in the V4+ state is excited under UV illumination while in absence of the same a trap** happens at the V5+ state. An insight to the mechanism is obtained by an analytic study of the response phenomenon. △ Less

Submitted 16 October, 2017; originally announced October 2017.