Showing 1–13 of 13 results for author: Rata, A D

Growth-sequence-dependent interface magnetism of SrIrO$_3$ - La$_{0.7}$Sr$_{0.3}$MnO$_3$ bilayers

Authors: L. Bergmann, P. Düring, S. Agrestini, A. Efimenko, S. -C. Liao, Z. Hu, P. Gargiani, C. -J. Choi, H. Baik, D. -S. Park, K. Dörr, A. D. Rata

Abstract: Bilayers of the oxide 3d ferromagnet La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ (LSMO) and the 5d paramagnet SrIrO$_{3}$ (SIO) with large spin-orbit coupling (SOC) have been investigated regarding the impact of interfacial SOC on magnetic order. For the growth sequence of LSMO on SIO, ferromagnetism is strongly altered and large out-of-plane-canted anisotropy associated with lacking magnetic saturation up to 4… ▽ More Bilayers of the oxide 3d ferromagnet La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ (LSMO) and the 5d paramagnet SrIrO$_{3}$ (SIO) with large spin-orbit coupling (SOC) have been investigated regarding the impact of interfacial SOC on magnetic order. For the growth sequence of LSMO on SIO, ferromagnetism is strongly altered and large out-of-plane-canted anisotropy associated with lacking magnetic saturation up to 4 T has been observed. Thin bilayer films have been grown coherently in both growth sequences on SrTiO$_3$ (001) by pulsed laser deposition and structurally characterized by scanning transmission electron microscopy (STEM) and x-ray diffraction (XRD). Measurements of magnetization and field-dependent Mn L$_{2,3}$ edge x-ray magnetic circular dichroism (XMCD) reveal changes of LSMO magnetic order which are strong in LSMO on SIO and weak in LSMO underneath of SIO. We attribute the impact of the growth sequence to the interfacial lattice structure/symmetry which is known to influence the interfacial magnetic coupling. △ Less

Submitted 7 January, 2020; originally announced January 2020.

Electronic signature of the vacancy ordering in NbO (Nb3O3)

Authors: A. K. Efimenko, N. Hollmann, K. Hoefer, J. Weinen, D. Takegami, K. K. Wolff, S. G. Altendorf, Z. Hu, A. D. Rata, A. C. Komarek, A. A. Nugroho, Y. F. Liao, K. -D. Tsuei, H. H. Hsieh, H. -J. Lin, C. T. Chen, L. H. Tjeng, D. Kasinathan

Abstract: We investigated the electronic structure of the vacancy-ordered 4d-transition metal monoxide NbO (Nb3O3) using angle-integrated soft- and hard-x-ray photoelectron spectroscopy as well as ultra-violet angle-resolved photoelectron spectroscopy. We found that density-functional-based band structure calculations can describe the spectral features accurately provided that self-interaction effects are t… ▽ More We investigated the electronic structure of the vacancy-ordered 4d-transition metal monoxide NbO (Nb3O3) using angle-integrated soft- and hard-x-ray photoelectron spectroscopy as well as ultra-violet angle-resolved photoelectron spectroscopy. We found that density-functional-based band structure calculations can describe the spectral features accurately provided that self-interaction effects are taken into account. In the angle-resolved spectra we were able to identify the so-called vacancy band that characterizes the ordering of the vacancies. This together with the band structure results indicates the important role of the very large inter-Nb-4d hybridization for the formation of the ordered vacancies and the high thermal stability of the ordered structure of niobium monoxide. △ Less

Submitted 20 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. B 96, 195112 (2017)

Fe3O4 thin films: controlling and manipulating an elusive quantum material

Authors: X. H. Liu, C. F. Chang, A. D. Rata, A. C. Komarek, L. H. Tjeng

Abstract: Fe3O4 (magnetite) is one of the most elusive quantum materials and at the same time one of the most studied transition metal oxide materials for thin film applications. The theoretically expected half-metallic behavior generates high expectations that it can be used in spintronic devices. Yet, despite the tremendous amount of work devoted to preparing thin films, the enigmatic first order metal-in… ▽ More Fe3O4 (magnetite) is one of the most elusive quantum materials and at the same time one of the most studied transition metal oxide materials for thin film applications. The theoretically expected half-metallic behavior generates high expectations that it can be used in spintronic devices. Yet, despite the tremendous amount of work devoted to preparing thin films, the enigmatic first order metal-insulator transition and the hall mark of magnetite known as the Verwey transition, is in thin films extremely broad and occurs at substantially lower temperatures as compared to that in high quality bulk single crystals. Here we have succeeded in finding and making a particular class of substrates that allows the growth of magnetite thin films with the Verwey transition as sharp as in the bulk. Moreover, we are now able to tune the transition temperature and, using tensile strain, increase it to substantially higher values than in the bulk. △ Less

Submitted 7 October, 2016; originally announced October 2016.

Dynamic atomic reconstruction: how Fe3O4 thin films evade polar catastrophe for epitaxy

Authors: C. F. Chang, Z. Hu, S. Klein, X. H. Liu, R. Sutarto, A. Tanaka, J. C. Cezar, N. B. Brookes, H. -J. Lin, H. H. Hsieh, C. T. Chen, A. D. Rata, L. H. Tjeng

Abstract: Polar catastrophe at the interface of oxide materials with strongly correlated electrons has triggered a flurry of new research activities. The expectations are that the design of such advanced interfaces will become a powerful route to engineer devices with novel functionalities. Here we investigate the initial stages of growth and the electronic structure of the spintronic Fe3O4/MgO (001) interf… ▽ More Polar catastrophe at the interface of oxide materials with strongly correlated electrons has triggered a flurry of new research activities. The expectations are that the design of such advanced interfaces will become a powerful route to engineer devices with novel functionalities. Here we investigate the initial stages of growth and the electronic structure of the spintronic Fe3O4/MgO (001) interface. Using soft x-ray absorption spectroscopy we have discovered that the so-called A-sites are completely missing in the first Fe3O4 monolayer. This allows us to develop an unexpected but elegant growth principle in which during deposition the Fe atoms are constantly on the move to solve the divergent electrostatic potential problem, thereby ensuring epitaxy and stoichiometry at the same time. This growth principle provides a new perspective for the design of interfaces. △ Less

Submitted 13 September, 2016; originally announced September 2016.

Comments: 30 pages

Termination control of magnetic coupling at a complex oxide interface

Authors: S. Das, A. D. Rata, I. V. Maznichenko, S. Agrestini, E. Pippel, K. Chen, S. M. Valvidares, H. Babu Vasili, J. Herrero-Martin, E. Pellegrin, K. Nenkov, A. Herklotz, A. Ernst, I. Mertig, Z. Hu, K. Doerr

Abstract: Atomically flat interfaces between ternary oxides have chemically different variants, depending on the terminating lattice planes of both oxides. Electronic properties change with the interface termination which affects, for instance, charge accumulation and magnetic interactions at the interface. Well-defined terminations have yet rarely been achieved for oxides of ABO3 type (with metals A, B). H… ▽ More Atomically flat interfaces between ternary oxides have chemically different variants, depending on the terminating lattice planes of both oxides. Electronic properties change with the interface termination which affects, for instance, charge accumulation and magnetic interactions at the interface. Well-defined terminations have yet rarely been achieved for oxides of ABO3 type (with metals A, B). Here, we report on a strategy of thin film growth and interface characterization applied to fabricate the La0.7Sr0.3MnO3-SrRuO3 interface with controlled termination. Ultra-strong antiferromagnetic coupling between the ferromagnets occurs at the MnO2-SrO interface, but not for the other termination, in agreement with density functional calculations. X-ray magnetic circular dichroism measurements reveal coupled reversal of Mn and Ru magnetic moments at the MnO2-SrO interface. Our results demonstrate termination control of magnetic coupling across a complex oxide interface and provide a pathway for theoretical and experimental explorations of novel electronic interface states with engineered magnetic properties. △ Less

Submitted 28 June, 2016; originally announced June 2016.

Verwey transition in Fe$_{3}$O$_{4}$ thin films: Influence of oxygen stoichiometry and substrate-induced microstructure

Authors: X. H. Liu, A. D. Rata, C. F. Chang, A. C. Komarek, L. H. Tjeng

Abstract: We have carried out a systematic experimental investigation to address the question why thin films of Fe$_3$O$_4$ (magnetite) generally have a very broad Verwey transition with lower transition temperatures as compared to the bulk. We observed using x-ray photoelectron spectroscopy, x-ray diffraction and resistivity measurements that the Verwey transition in thin films is drastically influenced no… ▽ More We have carried out a systematic experimental investigation to address the question why thin films of Fe$_3$O$_4$ (magnetite) generally have a very broad Verwey transition with lower transition temperatures as compared to the bulk. We observed using x-ray photoelectron spectroscopy, x-ray diffraction and resistivity measurements that the Verwey transition in thin films is drastically influenced not only by the oxygen stoichiometry but especially also by the substrate-induced microstructure. In particular, we found (1) that the transition temperature, the resistivity jump, and the conductivity gap of fully stoichiometric films greatly depends on the domain size, which increases gradually with increasing film thickness, (2) that the broadness of the transition scales with the width of the domain size distribution, and (3) that the hysteresis width is affected strongly by the presence of antiphase boundaries. Films grown on MgO (001) substrates showed the highest and sharpest transitions, with a 200 nm film having a T$_V$ of 122K, which is close to the bulk value. Films grown on substrates with large lattice constant mismatch revealed very broad transitions, and yet, all films show a transition with a hysteresis behavior, indicating that the transition is still first order rather than higher order. △ Less

Submitted 29 September, 2014; originally announced September 2014.

Comments: 9 pages, 12 figures

Journal ref: Phys. Rev. B 90, 125142 (2014)

Lattice structure and magnetization of LaCoO3 thin films

Authors: A. D. Rata, A. Herklotz, L. Schultz, K. Doerr

Abstract: We investigate the structure and magnetic properties of thin films of the LaCoO$_{3}$ compound. Thin films are deposited by pulsed laser deposition on various substrates in order to tune the strain from compressive to tensile. Single-phase (001) oriented LaCoO$_{3}$ layers were grown on all substrates despite large misfits. The tetragonal distortion of the films covers a wide range from -2% to 2… ▽ More We investigate the structure and magnetic properties of thin films of the LaCoO$_{3}$ compound. Thin films are deposited by pulsed laser deposition on various substrates in order to tune the strain from compressive to tensile. Single-phase (001) oriented LaCoO$_{3}$ layers were grown on all substrates despite large misfits. The tetragonal distortion of the films covers a wide range from -2% to 2.8%. Our LaCoO$_{3}$ films are ferromagnetic with Curie temperature around 85 K, contrary to the bulk. The total magnetic moment is below $1μ_{B}$/Co$^{3+}$, a value relatively small for an exited spin-state of the Co$^{3+}$ ions, but comparable to values reported in literature. A correlation of strain states and magnetic moment of Co$^{3+}$ ions in LaCoO$_{3}$ thin films is observed. △ Less

Submitted 25 February, 2010; originally announced February 2010.

Comments: submitted tu European Phys. J. B

Journal ref: Eur. Phys. J. B 76, 215219 (2010)

Reversible strain effect on the magnetization of LaCoO3 films

Authors: A. Herklotz, A. D. Rata, L. Schultz, K. Doerr

Abstract: The magnetization of ferromagnetic LaCoO3 films grown epitaxially on piezoelectric substrates has been found to systematically decrease with the reduction of tensile strain. The magnetization change induced by the reversible strain variation reveals an increase of the Co magnetic moment with tensile strain. The biaxial strain dependence of the Curie temperature is estimated to be below 4K/% in t… ▽ More The magnetization of ferromagnetic LaCoO3 films grown epitaxially on piezoelectric substrates has been found to systematically decrease with the reduction of tensile strain. The magnetization change induced by the reversible strain variation reveals an increase of the Co magnetic moment with tensile strain. The biaxial strain dependence of the Curie temperature is estimated to be below 4K/% in the as-grown tensile strain state of our films. This is in agreement with results from statically strained films on various substrates. △ Less

Submitted 7 May, 2008; originally announced May 2008.

Journal ref: Phys. Rev. B 79, 092409 (2009)

Strain-induced insulator state in La_0.7Sr_0.3CoO_3

Authors: A. D. Rata, A. Herklotz, K. Nenkov, L. Schultz, K. Doerr

Abstract: We report on the observation of a strain-induced insulator state in ferromagnetic La_0.7Sr_0.3CoO_3 films. Tensile strain above 1% is found to enhance the resistivity by several orders of magnitude. Reversible strain of 0.15% applied using a piezoelectric substrate triggers huge resistance modulations, including a change by a factor of 10 in the paramagnetic regime at 300 K. However, below the f… ▽ More We report on the observation of a strain-induced insulator state in ferromagnetic La_0.7Sr_0.3CoO_3 films. Tensile strain above 1% is found to enhance the resistivity by several orders of magnitude. Reversible strain of 0.15% applied using a piezoelectric substrate triggers huge resistance modulations, including a change by a factor of 10 in the paramagnetic regime at 300 K. However, below the ferromagnetic ordering temperature, the magnetization data indicate weak dependence on strain for the spin state of the Co ions. We interpret the changes observed in the transport properties in terms of a strain-induced splitting of the Co e_g levels and reduced double exchange, combined with a percolation-type conduction in an electronic cluster state. △ Less

Submitted 5 October, 2007; originally announced October 2007.

Journal ref: Phys. Rev. Lett. 100, 076401 (2008)

Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions

Authors: A. D. Rata, H. Braak, D. E. Buergler, C. M. Schneider

Abstract: Magnetic tunnel junctions with the layer sequence Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to -66% at RT. The largest value of -84% at 20 K reflects a rather weak influence of temperature. The dependence on the voltage drop shows an unusual behavior wi… ▽ More Magnetic tunnel junctions with the layer sequence Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to -66% at RT. The largest value of -84% at 20 K reflects a rather weak influence of temperature. The dependence on the voltage drop shows an unusual behavior with two almost symmetric peaks at $\pm600$ mV with large inverse TMR ratios and small positive values around zero bias. △ Less

Submitted 30 November, 2006; originally announced November 2006.

Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films

Authors: A. D. Rata, H. Braak, D. E. Buergler, S. Cramm, C. M. Schneider

Abstract: We investigate the structure and magneto-transport properties of thin films of the Co_2Cr_xFe_(1-x)Al full-Heusler compound, which is predicted to be a half-metal by first-principles theoretical calculations. Thin films are deposited by magnetron sputtering at room temperature on various substrates in order to tune the growth from polycrystalline on thermally oxidized Si substrates to highly tex… ▽ More We investigate the structure and magneto-transport properties of thin films of the Co_2Cr_xFe_(1-x)Al full-Heusler compound, which is predicted to be a half-metal by first-principles theoretical calculations. Thin films are deposited by magnetron sputtering at room temperature on various substrates in order to tune the growth from polycrystalline on thermally oxidized Si substrates to highly textured and even epitaxial on MgO(001) substrates, respectively. Our Heusler films are magnetically very soft and ferromagnetic with Curie temperatures up to 630 K. The total magnetic moment is reduced compared to the theoretical bulk value, but still comparable to values reported for films grown at elevated temperature. Polycrystalline Heusler films combined with MgO barriers are incorporated into magnetic tunnel junctions and yield 37% magnetoresistance at room temperature. △ Less

Submitted 24 March, 2006; originally announced March 2006.

Giant positive magnetoresistance in metallic VOx thin films

Authors: A. D. Rata, V. Kataev, D. Khomskii, T. Hibma

Abstract: We report on giant positive magnetoresistance effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude reaches 70% in a magnetic field of 5 T. Strong electron-electron interactions in the presence of strong disorder may qualitatively explain the results. An alte… ▽ More We report on giant positive magnetoresistance effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude reaches 70% in a magnetic field of 5 T. Strong electron-electron interactions in the presence of strong disorder may qualitatively explain the results. An alternative explanation, related to a possible magnetic instability, is also discussed. △ Less

Submitted 10 July, 2003; v1 submitted 8 July, 2003; originally announced July 2003.

Comments: 4 pages, 5 figures included in the text, references updated

Growth and properties of strained VOx thin films with controlled stoichiometry

Authors: A. D. Rata, A. R. Chezan, T. Hibma, M. W. Haverkort, L. H. Tjeng, H. H. Hsieh, H. J. Lin, C. T. Chen

Abstract: We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using 18O2-RBS and the vanadium valence using XAS. The upper and lower stoichiometry limits found are similar to the ones known for bulk material (0.8<x<1.3). From the RHEED oscillation period a large number of vacancies for both vanadium and oxygen… ▽ More We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using 18O2-RBS and the vanadium valence using XAS. The upper and lower stoichiometry limits found are similar to the ones known for bulk material (0.8<x<1.3). From the RHEED oscillation period a large number of vacancies for both vanadium and oxygen were deduced, i.e. ~16% for stoichiometric VO. These numbers are, surprisingly, very similar to those for bulk material and consequently quite strain-insensitive. XAS measurements reveal that the vacancies give rise to strong low symmetry ligand fields to be present. The electrical conductivity of the films is much lower than the conductivity of bulk samples which we attribute to a decrease in the direct overlap between t2g orbitals in the coherently strained layers. The temperature dependence of the conductivity is consistent with a variable range hop** mechanism. △ Less

Submitted 17 June, 2003; v1 submitted 15 January, 2003; originally announced January 2003.

Comments: 12 pages, 16 figures included, revised version

Journal ref: Phys. Rev. B 69, 075404 (2004)