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Extending Shannon's Ionic Radii Database Using Machine Learning
Authors:
Ahmer A. B. Baloch,
Saad M. Alqahtani,
Faisal Mumtaz,
Ali H. Muqaibel,
Sergey N. Rashkeev,
Fahhad H. Alharbi
Abstract:
In computational material design, ionic radius is one of the most important physical parameters used to predict material properties. Motivated by the progress in computational materials science and material informatics, we extend the renowned Shannon's table from 475 ions to 987 ions. Accordingly, a rigorous Machine Learning (ML) approach is employed to extend the ionic radii table using all possi…
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In computational material design, ionic radius is one of the most important physical parameters used to predict material properties. Motivated by the progress in computational materials science and material informatics, we extend the renowned Shannon's table from 475 ions to 987 ions. Accordingly, a rigorous Machine Learning (ML) approach is employed to extend the ionic radii table using all possible combinations of Oxidation States (OS) and Coordination Numbers (CN) available in crystallographic repositories. An ionic-radius regression model for Shannon's database is developed as a function of the period number, the valence orbital configuration, OS, CN, and Ionization Potential. In the Gaussian Process Regression (GPR) model, the reached R-square $R^2$ accuracy is 99\% while the root mean square error of radii is 0.0332 Å. The optimized GPR model is then employed for predicting a new set of ionic radii for uncommon combinations of OS and CN extracted by harnessing crystal structures from materials project databases. The generated data is consolidated with the reputable Shannon's data and is made available online in a database repository \url{https://cmd-ml.github.io/}.
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Submitted 1 January, 2021;
originally announced January 2021.
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An Efficient Descriptor Model for Designing Materials for Solar Cells
Authors:
Fahhad H Alharbi,
Sergey N Rashkeev,
Fedwa El-Mellouhi,
Hans P Lüthi,
Nouar Tabet,
Sabre Kais
Abstract:
An efficient descriptor model for fast screening of potential materials for solar cell applications is presented. It works for both excitonic and non-excitonic solar cells materials, and in addition to the energy gap it includes the absorption spectrum ($α(E)$) of the material. The charge transport properties of the explored materials are modeled using the characteristic diffusion length ($L_{d}$)…
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An efficient descriptor model for fast screening of potential materials for solar cell applications is presented. It works for both excitonic and non-excitonic solar cells materials, and in addition to the energy gap it includes the absorption spectrum ($α(E)$) of the material. The charge transport properties of the explored materials are modeled using the characteristic diffusion length ($L_{d}$) determined for the respective family of compounds. The presented model surpasses the widely used Scharber model developed for bulk-heterojunction solar cells [Scharber \textit{et al., Advanced Materials}, 2006, Vol. 18, 789]. Using published experimental data, we show that the presented model is more accurate in predicting the achievable efficiencies. Although the focus of this work is on organic photovoltaics (OPV), for which the original Scharber model was developed, the model presented here is applicable also to other solar cell technologies. To model both excitonic and non-excitonic systems, two different sets of parameters are used to account for the different modes of operation. The analysis of the presented descriptor model clearly shows the benefit of including $α(E)$ and $L_{d}$ in view of improved screening results.
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Submitted 3 June, 2017;
originally announced June 2017.
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Hydrogen Bonding: A Mechanism for Tuning Electronic and Optical Properties of Hybrid Organic-Inorganic Frameworks
Authors:
Fedwa El-Mellouhi,
El Tayeb Bentria,
Asma Marzouk,
Sergey N. Rashkeev,
Sabre Kais,
Fahhad H. Alharbi
Abstract:
Here we demonstrate that significant progress in this area may be achieved by introducing structural elements that form hydrogen bonds with environment. Considering several examples of hybrid framework materials with different structural ordering containing protonated sulfonium cation H3S+ that forms strong hydrogen bonds with electronegative halogen anions (Cl-, F-), we found that hydrogen bondin…
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Here we demonstrate that significant progress in this area may be achieved by introducing structural elements that form hydrogen bonds with environment. Considering several examples of hybrid framework materials with different structural ordering containing protonated sulfonium cation H3S+ that forms strong hydrogen bonds with electronegative halogen anions (Cl-, F-), we found that hydrogen bonding increases the structural stability of the material and may be used for tuning electronic states near the bandgap. We suggest that such a behavior has a universal character and should be observed in hybrid inorganic-organic framework materials containing protonated cations. This effect may serve as a viable route for optoelectronic and photovoltaic applications.
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Submitted 25 April, 2016;
originally announced April 2016.
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Enhancing Intrinsic Stability of Hybrid Perovskite Solar Cell by Strong, yet Balanced, Electronic Coupling
Authors:
Fedwa El-Mellouhi,
El Tayeb Bentria,
Sergey N Rashkeev,
Sabre Kais,
Fahhad H Alharbi
Abstract:
In the past few years, the meteoric development of hybrid organic--inorganic perovskite solar cells (PSC) astonished the community. The efficiency has already reached the level needed for commercialization; however, the instability hinders its deployment on the market. Here, we report a mechanism to chemically stabilize PSC absorbers. We propose to replace the widely used methylammonium cation (\c…
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In the past few years, the meteoric development of hybrid organic--inorganic perovskite solar cells (PSC) astonished the community. The efficiency has already reached the level needed for commercialization; however, the instability hinders its deployment on the market. Here, we report a mechanism to chemically stabilize PSC absorbers. We propose to replace the widely used methylammonium cation (\ce{CH3NH3+}) by alternative molecular cations allowing an enhanced electronic coupling between the cation and the \ce{PbI6} octahedra while maintaining the band gap energy within the suitable range for solar cells. The mechanism exploits establishing a balance between the electronegativity of the materials' constituents and the resulting ionic electrostatic interactions. The calculations demonstrate the concept of enhancing the electronic coupling, and hence the stability, by exploring the stabilizing features of \ce{CH3PH3+}, \ce{CH3SH2+}, and \ce{SH3+} cations, among several other possible candidates. Chemical stability enhancement hence results from a strong, yet balanced, electronic coupling between the cation and the halides in the octahedron. This shall unlock the hindering instability problem for PSCs and allow them to hit the market as a serious low-cost competitor to silicon based solar cell technologies.
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Submitted 23 April, 2016;
originally announced April 2016.
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Domain Walls Conductivity in Hybrid Organometallic Perovskites: The Key of CH3NH3PbI3 Solar Cell High Performance
Authors:
Sergey N. Rashkeev,
Fedwa El-Mellouhi,
Sabre Kais,
Fahhad H. Alharbi
Abstract:
The past several years has witnessed a surge of interest in organometallic trihalide perovskites, which are at the heart of the new generation of solid-state solar cells. Here, we calculated the static conductivity of charged domain walls in n- and p- doped organometallic uniaxial ferroelectric semiconductor perovskite CH3NH3PbI3 using the Landau-Ginzburg-Devonshire (LGD) theory. We find that due…
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The past several years has witnessed a surge of interest in organometallic trihalide perovskites, which are at the heart of the new generation of solid-state solar cells. Here, we calculated the static conductivity of charged domain walls in n- and p- doped organometallic uniaxial ferroelectric semiconductor perovskite CH3NH3PbI3 using the Landau-Ginzburg-Devonshire (LGD) theory. We find that due to the charge carrier accumulation, the static conductivity may drastically increase at the domain wall by 3-4 orders of magnitude in comparison with conductivity through the bulk of the material. Also, a two-dimensional degenerated gas of highly mobile charge carriers could be formed at the wall. The high values of conductivity at domain walls and interfaces explain high efficiency in organometallic solution-processed perovskite films which contains lots of different point and extended defects. These results could suggest new routes to enhance the performance of this promising class of novel photovoltaic materials.
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Submitted 11 March, 2015;
originally announced March 2015.
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Dopants adsorbed as single atoms prevent degradation of catalysts
Authors:
Sanwu Wang,
Albina Y. Borisevich,
Sergey N. Rashkeev,
Michael V. Glazoff,
Karl Sohlberg,
Stephen J. Pennycook,
Sokrates T. Pantelides
Abstract:
The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although do** has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous g…
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The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although do** has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous gamma-Al2O3, a widely used catalyst and catalytic support, transforms to non-porous alpha-Al2O3 at ~1,100C. Do** with La raises the transformation temperature to ~1,250C, but it has not been possible to establish if La atoms enter the bulk, adsorb on surfaces as single atoms or clusters, or form surface compounds. Here, we use direct imaging by aberration-corrected Z-contrast scanning transmission electron microscopy coupled with extended X-ray absorption fine structure and first-principles calculations to demonstrate that, contrary to expectations, stabilization is achieved by isolated La atoms adsorbed on the surface. Strong binding and mutual repulsion of La atoms effectively pin the surface and inhibit both sintering and the transformation to alpha-Al2O3. The results provide the first guidelines for the choice of dopants to prevent thermal degradation of catalysts and other porous materials.
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Submitted 10 July, 2004;
originally announced July 2004.
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Quasiclassical calculation of spontaneous current in restricted geometries
Authors:
M. H. S. Amin,
M. Coury,
A. M. Zagoskin,
S. N. Rashkeev,
A. N. Omelyanchouk
Abstract:
Calculation of current and order parameter distribution in inhomogeneous superconductors is often based on a self-consistent solution of Eilenberger equations for quasiclassical Green's functions. Compared to the original Gorkov equations, the problem is much simplified due to the fact that the values of Green's functions at a given point are connected to the bulk ones at infinity (boundary valu…
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Calculation of current and order parameter distribution in inhomogeneous superconductors is often based on a self-consistent solution of Eilenberger equations for quasiclassical Green's functions. Compared to the original Gorkov equations, the problem is much simplified due to the fact that the values of Green's functions at a given point are connected to the bulk ones at infinity (boundary values) by ``dragging'' along the classical trajectories of quasiparticles. In finite size systems, where classical trajectories undergo multiple reflections from surfaces and interfaces, the usefulness of the approach is no longer obvious, since there is no simple criterion to determine what boundary value a trajectory corresponds to, and whether it reaches infinity at all. Here, we demonstrate the modification of the approach based on the Schophol-Maki transformation, which provides the basis for stable numerical calculations in 2D. We apply it to two examples: generation of spontaneous currents and magnetic moments in isolated islands of d-wave superconductor with subdominant order-parameters s and d_{xy}, and in a grain boundary junction between two arbitrarily oriented d-wave superconductors. Both examples are relevant to the discussion of time-reversal symmetry breaking in unconventional superconductors, as well as for application in quantum computing.
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Submitted 26 July, 2002; v1 submitted 25 July, 2002;
originally announced July 2002.
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d+is vs d+id' Time Reversal Symmetry Breaking States in Finite Size Systems
Authors:
M. H. S. Amin,
S. N. Rashkeev,
M. Coury,
A. N. Omelyanchouk,
A. M. Zagoskin
Abstract:
We report self-consistent quasiclassical calculations of spontaneous currents and magnetic moments in finite size unconventional superconducting systems, namely: (i) in isolated d-wave superconductor islands where, in addition to the dominant order parameter (with a d_{x^2-y^2} symmetry), a subdominant order parameter of s or d_{xy} symmetry is added; (ii) in grain boundary junctions between two…
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We report self-consistent quasiclassical calculations of spontaneous currents and magnetic moments in finite size unconventional superconducting systems, namely: (i) in isolated d-wave superconductor islands where, in addition to the dominant order parameter (with a d_{x^2-y^2} symmetry), a subdominant order parameter of s or d_{xy} symmetry is added; (ii) in grain boundary junctions between two arbitrarily oriented d-wave superconductors, and between a d-wave and an s-wave superconductor. We show that the profile of the spontaneous current density and the magnetic field distribution depend on the time-reversal symmetry breaking properties of the system. For the d_{x^2-y^2}+id_{xy} state, vortices appear near the edges of the finite size systems. We associate these vortices with the chiral nature of the mixed order parameter. The method developed here is quite general, and can be used for predicting properties of any finite size superconducting system.
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Submitted 23 September, 2002; v1 submitted 23 May, 2002;
originally announced May 2002.
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Electronic Structure, Bonding and Optical Spectrum of MgB2
Authors:
V. P. Antropov,
K. D. Belashchenko,
M. van Schilfgaarde,
S. N. Rashkeev
Abstract:
This paper contains both recently published and original results concerning the electronic structure, bonding and relevant properties of (Mg-Al)B2. We analyse the electronic structure formation of bulk and surface states, study the nuclear spin-lattice relaxation rates, compare the theoretical and experimental estimates of the density of states at the Fermi level, and review the electron-phonon…
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This paper contains both recently published and original results concerning the electronic structure, bonding and relevant properties of (Mg-Al)B2. We analyse the electronic structure formation of bulk and surface states, study the nuclear spin-lattice relaxation rates, compare the theoretical and experimental estimates of the density of states at the Fermi level, and review the electron-phonon coupling calculations. The analysis of optical properties of MgB2 and AlB2 is also provided.
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Submitted 5 July, 2001;
originally announced July 2001.
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Quasiclassical Theory of Spontaneous Currents at Surfaces and Interfaces of d-Wave Superconductors
Authors:
M. H. S. Amin,
A. N. Omelyanchouk,
S. N. Rashkeev,
M. Coury,
A. M. Zagoskin
Abstract:
We investigate the properties of spontaneous currents generated at surfaces and interfaces of d-wave superconductors using the self-consistent quasiclassical Eilenberger equations. The influence of the roughness and reflectivity of the boundaries on the spontaneous current are studied. We show that these have very different effects at the surfaces compared to the interfaces, which reflects the d…
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We investigate the properties of spontaneous currents generated at surfaces and interfaces of d-wave superconductors using the self-consistent quasiclassical Eilenberger equations. The influence of the roughness and reflectivity of the boundaries on the spontaneous current are studied. We show that these have very different effects at the surfaces compared to the interfaces, which reflects the different nature of the time reversal symmetry breaking states in these two systems. We find a signature of the ``anomalous proximity effect'' at rough d-wave interfaces. We also show that the existence of a subdominant order parameter, which is necessary for time reversal symmetry breaking at the surface, suppresses the spontaneous current generation due to proximity effect at the interface between two superconductors. We associate orbital moments to the spontaneous currents to explain the ``superscreening'' effect, which seems to be present at all ideal d-wave surfaces and interfaces, where d_{xy} is the favorite subdominant symmetry.
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Submitted 2 May, 2002; v1 submitted 25 May, 2001;
originally announced May 2001.
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Anisotropy of p states and 11B nuclear spin-lattice relaxation in (Mg,Al)B2
Authors:
K. D. Belashchenko,
V. P. Antropov,
S. N. Rashkeev
Abstract:
We calculated the nuclear spin-lattice relaxation rate in the (Mg,Al)B2 system and found that the orbital relaxation mechanism dominates over the dipolar and Fermi-contact mechanisms in MgB2, whereas in AlB2 due to a smaller density of states and strong anisotropy of boron p orbitals the relaxation is completely determined by Fermi-contact interaction. The results for MgB2 are compared with exis…
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We calculated the nuclear spin-lattice relaxation rate in the (Mg,Al)B2 system and found that the orbital relaxation mechanism dominates over the dipolar and Fermi-contact mechanisms in MgB2, whereas in AlB2 due to a smaller density of states and strong anisotropy of boron p orbitals the relaxation is completely determined by Fermi-contact interaction. The results for MgB2 are compared with existing experimental data, whereas our results for the doped alloy and AlB2 can be used in future experiments to verify the theoretical predictions about the electronic structure of this system.
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Submitted 17 May, 2001;
originally announced May 2001.
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Second harmonic generation and birefringence of some ternary pnictide semiconductors
Authors:
Sergey N. Rashkeev,
Sukit Limpijumnong,
Walter R. L. Lambrecht
Abstract:
A first-principles study of the birefringence and the frequency dependent second harmonic generation (SHG) coefficients of the ternary pnictide semiconductors with formula ABC$_2$ (A = Zn, Cd; B = Si, Ge; C = As, P) with the chalcopyrite structures was carried out. We show that a simple empirical observation that a smaller value of the gap is correlated with larger value of SHG is qualitatively…
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A first-principles study of the birefringence and the frequency dependent second harmonic generation (SHG) coefficients of the ternary pnictide semiconductors with formula ABC$_2$ (A = Zn, Cd; B = Si, Ge; C = As, P) with the chalcopyrite structures was carried out. We show that a simple empirical observation that a smaller value of the gap is correlated with larger value of SHG is qualitatively true. However, simple inverse power scaling laws between gaps and SHG were not found. Instead, the real value of the nonlinear response is a result of a very delicate balance between different intraband and interband terms.
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Submitted 28 September, 1998;
originally announced September 1998.
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Second harmonic generation in SiC polytypes
Authors:
Sergey N. Rashkeev,
Walter R. L. Lambrecht,
Benjamin Segall
Abstract:
LMTO calculations are presented for the frequency dependent second harmonic generation (SHG) in the polytypes 2H, 4H, 6H, 15R and 3C of SiC. All independent tensor components are calculated. The spectral features and the ratios of the 333 to 311 tensorial components are studied as a function of the degree of hexagonality. The relationship to the linear optical response and the underlying band st…
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LMTO calculations are presented for the frequency dependent second harmonic generation (SHG) in the polytypes 2H, 4H, 6H, 15R and 3C of SiC. All independent tensor components are calculated. The spectral features and the ratios of the 333 to 311 tensorial components are studied as a function of the degree of hexagonality. The relationship to the linear optical response and the underlying band structure are investigated. SHG is suggested to be a sensitive tool for investigating the near band edge interband excitations.
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Submitted 29 September, 1997;
originally announced September 1997.
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Efficient ab-initio method for the calculation of frequency dependent non-linear optical response in semiconductors: application to second harmonic generation
Authors:
Sergey N. Rashkeev,
Walter R. L. Lambrecht,
Benjamin Segall
Abstract:
A LMTO implementation of Aversa and Sipe's length-gauge formalism for calculating the full frequency dependent second-harmonic generation in the independent particle approximation is presented. It is applied to GaAs, GaP, 3C-SiC, c-BN and wurtzite and zincblende GaN and AlN. The use of the scissor's operator for correcting LDA errors is discussed and compared to an alternative approach in which…
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A LMTO implementation of Aversa and Sipe's length-gauge formalism for calculating the full frequency dependent second-harmonic generation in the independent particle approximation is presented. It is applied to GaAs, GaP, 3C-SiC, c-BN and wurtzite and zincblende GaN and AlN. The use of the scissor's operator for correcting LDA errors is discussed and compared to an alternative approach in which the Hamiltonian is corrected. The latter is found to be superior. Decomposition in omega and 2 omega resonances and in intra- and inter-band contributions and in specific band-to-band contributions are presented.
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Submitted 16 September, 1997;
originally announced September 1997.
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Soft Disorder Effects in the Conductance Quantization in Quantum Point Contacts: Indirect Backscattering Statistics
Authors:
A. M. Zagoskin,
S. N. Rashkeev,
R. I. Shekhter,
G. Wendin
Abstract:
The breakdown of conductance quantization in a quantum point contact in the presence of random long-range impurity potential is discussed. It is shown that in the linear response regime a decisive role is played by the indirect backscattering mechanism via quasilocalized states at the Fermi level; this can provide much higher backscattering rate than any direct backscattering process. For the re…
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The breakdown of conductance quantization in a quantum point contact in the presence of random long-range impurity potential is discussed. It is shown that in the linear response regime a decisive role is played by the indirect backscattering mechanism via quasilocalized states at the Fermi level; this can provide much higher backscattering rate than any direct backscattering process. For the realistic contact lengths ($\leq 2000$nm) the scattering processes prove to be independent, in spite of coherence of the electron wave. The distribution function of conductance fluctuations is obtained by direct numerical calculations as well as estimated within an analytical model for the first time. It is shown to be a generalized Poisson distribution. Estimates are made for quantum point contact performance at different choice of parameters. In particular, it is the better the larger the intermode distance is compared to the amplitude of the random impurity potential.
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Submitted 25 April, 1994;
originally announced April 1994.
