Patterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers
Authors:
J. Zuniga-Perez,
E. Mallet,
R. Hahe,
M. J. Rashid,
S. Bouchoule,
C. Brimont,
P. Disseix,
J. Y. Duboz,
G. Gommé,
T. Guillet,
O. Jamadi,
X. Lafosse,
M. Leroux,
J. Leymarie,
Feng Li,
F. Réveret,
F. Semond
Abstract:
A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogenei…
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A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices.
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Submitted 30 April, 2014;
originally announced April 2014.
