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Chiral Phonons with Giant Magnetic Moments in a Topological Crystalline Insulator
Authors:
Felix G. G. Hernandez,
Andrey Baydin,
Swati Chaudhary,
Fuyang Tay,
Ikufumi Katayama,
Jun Takeda,
Hiroyuki Nojiri,
Anderson K. Okazaki,
Paulo H. O. Rappl,
Eduardo Abramof,
Martin Rodriguez-Vega,
Gregory A. Fiete,
Junichiro Kono
Abstract:
We have studied the magnetic response of transverse optical phonons in Pb$_{1-x}$Sn$_{x}$Te films. Polarization-dependent terahertz magnetospectroscopy measurements revealed Zeeman splittings and diamagnetic shifts, demonstrating that these phonon modes become chiral in magnetic fields. Films in the topological crystalline insulator phase ($x > 0.32$) exhibited magnetic moment values that are larg…
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We have studied the magnetic response of transverse optical phonons in Pb$_{1-x}$Sn$_{x}$Te films. Polarization-dependent terahertz magnetospectroscopy measurements revealed Zeeman splittings and diamagnetic shifts, demonstrating that these phonon modes become chiral in magnetic fields. Films in the topological crystalline insulator phase ($x > 0.32$) exhibited magnetic moment values that are larger than those for topologically trivial films ($x < 0.32$) by two orders of magnitude. Furthermore, the sign of the effective $g$-factor was opposite in the two phases, which can be explained by our theoretical model. These results strongly indicate the existence of interplay between the magnetic properties of chiral phonons and the topology of electronic band structure.
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Submitted 16 January, 2023; v1 submitted 25 August, 2022;
originally announced August 2022.
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Magnetic Control of Soft Chiral Phonons in PbTe
Authors:
Andrey Baydin,
Felix G. G. Hernandez,
Martin Rodriguez-Vega,
Anderson K. Okazaki,
Fuyang Tay,
G. Timothy Noe II,
Ikufumi Katayama,
Jun Takeda,
Hiroyuki Nojiri,
Paulo H. O. Rappl,
Eduardo Abramof,
Gregory A. Fiete,
Junichiro Kono
Abstract:
PbTe crystals have a soft transverse optical phonon mode in the terahertz frequency range, which is known to efficiently decay into heat-carrying acoustic phonons, resulting in anomalously low thermal conductivity. Here, we studied this phonon via polarization-dependent terahertz spectroscopy. We observed softening of this mode with decreasing temperature, indicative of incipient ferroelectricity,…
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PbTe crystals have a soft transverse optical phonon mode in the terahertz frequency range, which is known to efficiently decay into heat-carrying acoustic phonons, resulting in anomalously low thermal conductivity. Here, we studied this phonon via polarization-dependent terahertz spectroscopy. We observed softening of this mode with decreasing temperature, indicative of incipient ferroelectricity, which we explain through a model including strong anharmonicity with a quartic displacement term. In magnetic fields up to 25T, the phonon mode split into two modes with opposite handedness, exhibiting circular dichroism. Their frequencies displayed Zeeman splitting together with an overall diamagnetic shift with increasing magnetic field. Using a group-theoretical approach, we demonstrate that these observations are results of magnetic field-induced morphic changes in the crystal symmetries through the Lorentz force exerted on the lattice ions. This study thus reveals a novel process of controlling phonon properties in a soft ionic lattice by a strong magnetic field.
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Submitted 18 February, 2022; v1 submitted 15 July, 2021;
originally announced July 2021.
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Incipient antiferromagnetism in the Eu-doped topological insulator Bi$_2$Te$_3$
Authors:
Abdul Tcakaev,
Volodymyr B. Zabolotnyy,
Celso I. Fornari,
Philipp Rüßmann,
Thiago R. F. Peixoto,
Fabian Stier,
Michael Dettbarn,
Philipp Kagerer,
Eugen Weschke,
Enrico Schierle,
Peter Bencok,
Paulo H. O. Rappl,
Eduardo Abramof,
Hendrik Bentmann,
Eberhard Goering,
Friedrich Reinert,
Vladimir Hinkov
Abstract:
Rare earth ions typically exhibit larger magnetic moments than transition metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Yet, in a recent photoemission study of Eu-doped Bi$_2$Te$_3$ films, the spectra remained gapless down to $T = 20\;\text{K}$. Here, we scrutinize whether the conditions for a substantial gap formation in thi…
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Rare earth ions typically exhibit larger magnetic moments than transition metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Yet, in a recent photoemission study of Eu-doped Bi$_2$Te$_3$ films, the spectra remained gapless down to $T = 20\;\text{K}$. Here, we scrutinize whether the conditions for a substantial gap formation in this system are present by combining spectroscopic and bulk characterization methods with theoretical calculations. For all studied Eu do** concentrations, our atomic multiplet analysis of the $M_{4,5}$ x-ray absorption and magnetic circular dichroism spectra reveals a Eu$^{2+}$ valence and confirms a large magnetic moment, consistent with a $4f^7 \; {^8}S_{7/2}$ ground state. At temperatures below $10\;\text{K}$, bulk magnetometry indicates the onset of antiferromagnetic (AFM) ordering. This is in good agreement with density functional theory, which predicts AFM interactions between the Eu impurities. Our results support the notion that antiferromagnetism can coexist with topological surface states in rare-earth doped Bi$_2$Te$_3$ and call for spectroscopic studies in the kelvin range to look for novel quantum phenomena such as the quantum anomalous Hall effect.
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Submitted 24 September, 2020;
originally announced September 2020.
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Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators
Authors:
Celso I. Fornari,
Eduardo Abramof,
Paulo H. O. Rappl,
Stefan W. Kycia,
Sérgio L. Morelhão
Abstract:
Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient of telluride compose a scenario where growth parameters have drastic effects on structural and electronic properties of the films. Recently [J. Phys.…
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Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient of telluride compose a scenario where growth parameters have drastic effects on structural and electronic properties of the films. Recently [J. Phys. Chem. C 2019, 123, 24818-24825], a detailed investigation has been performed on the dynamics of defects in epitaxial films of this material, revealing the impact of film/substrate lattice misfit on the films' lateral coherence. Very small lattice misfit (<0.05%) are expected to have no influence on quality of epitaxial system with atomic layers weakly bonded to each other by van der Waals forces, contrarily to what was observed. In this work, we investigate the correlation between lattice misfit and size and morphology of the film crystalline domains. Three-dimensional reciprocal-space maps of film Bragg reflections obtained with synchrotron X-rays are used to visualize the spatial conformation of the crystallographic domains through film thickness, while atomic force microscopy images provide direct information of the domains morphology at the film surface.
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Submitted 5 August, 2020;
originally announced August 2020.
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Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films
Authors:
Sergio L. Morelhao,
Stefan Kycia,
Samuel Netzke,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
Epitaxial films of bismuth telluride topological insulators have received increasing attention due to potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflectio…
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Epitaxial films of bismuth telluride topological insulators have received increasing attention due to potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007\% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure.
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Submitted 29 July, 2020;
originally announced July 2020.
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Hypergiant spin polarons photogenerated in ferromagnetic europium chalcogenides
Authors:
X. Gratens,
Yunbo Ou,
J. Moodera,
P. H. O. Rappl,
A. B. Henriques
Abstract:
We find that in the ferromagnetic semiconductor EuS, near its Curie temperature, a single band-edge photon generates a spin polaron (SP), whose magnetic moment approaches 20,000 Bohr magnetons. This is much larger than the supergiant photoinduced SPs in antiferromagnetic europium chalcogenides, reported previously. The larger SP in ferromagnetic EuS, and still larger expected for EuO, is explained…
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We find that in the ferromagnetic semiconductor EuS, near its Curie temperature, a single band-edge photon generates a spin polaron (SP), whose magnetic moment approaches 20,000 Bohr magnetons. This is much larger than the supergiant photoinduced SPs in antiferromagnetic europium chalcogenides, reported previously. The larger SP in ferromagnetic EuS, and still larger expected for EuO, is explained by a larger Bohr radius of the photoexcited electron state, which encircles and polarizes a greater number of lattice spins. However, because the wave function of the photoexcited electron spreads over a greater volume, the photoexcited electron exchange interaction with individual lattice spins weakens, which makes the SP more easily quenched thermally.
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Submitted 29 March, 2020;
originally announced March 2020.
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Lateral lattice coherence lengths in thin films of bismuth telluride topological insulators, with overview on polarization factors for X-ray dynamical diffraction in monochromator crystals
Authors:
Sergio L. Morelhao,
Stefan Kycia,
Samuel Netzke,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
In the supporting information file for article Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators(J. Phys. Chem. C 2019, 123, 24818-24825, doi: 10.1021/acs.jpcc.9b05377), several topics on X-ray diffraction analysis of thin films were developed or revisited. A simple equation to determine lateral lattice coherence lengths in thin films stands as the main devel…
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In the supporting information file for article Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators(J. Phys. Chem. C 2019, 123, 24818-24825, doi: 10.1021/acs.jpcc.9b05377), several topics on X-ray diffraction analysis of thin films were developed or revisited. A simple equation to determine lateral lattice coherence lengths in thin films stands as the main development (section S4 - Lateral lattice coherence length in thin films), while X-ray dynamical diffraction simulation in monochromator crystals stands as an interesting overview on how the ratio between $π$ and $σ$ polarization components is affected by whether diffraction takes place under kinematical or dynamical regime (section S3 - Polarization factor).
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Submitted 1 November, 2019;
originally announced November 2019.
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X-ray tools for van der Waals epitaxy of bismuth telluride topological insulator films
Authors:
Stefan Kycia,
Sergio L. Morelhao,
Samuel Netzke,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
Potential applications in spintronics and quantum computing have motivated much recent research in epitaxial films of bismuth telluride. This system is also an example of van der Waals (vdW) epitaxy where the interface coherence between film and substrate is based on vdW bonds instead of strong ionic or covalent bonds. Effects of lattice mismatch on electrical properties and film structure are mor…
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Potential applications in spintronics and quantum computing have motivated much recent research in epitaxial films of bismuth telluride. This system is also an example of van der Waals (vdW) epitaxy where the interface coherence between film and substrate is based on vdW bonds instead of strong ionic or covalent bonds. Effects of lattice mismatch on electrical properties and film structure are more difficult to control due to the weakness of the vdW forces. Here we present a general x-ray diffraction method to investigate in-plane atomic displacements and lateral lattice coherence length in vdW epitaxy. The method is demonstrated in a series of films grown at different temperatures and pressures of additional tellurium sources, revealing strong intercorrelations between the lateral features as well as with the n/p-types of free charge carries.
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Submitted 27 December, 2018;
originally announced December 2018.
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Magnetic-field-induced crossover from the inverse Faraday effect to the optical orientation in EuTe
Authors:
V. V. Pavlov,
R. V. Pisarev,
S. G. Nefedov,
I. A. Akimov,
D. R. Yakovlev,
M. Bayer,
A. B. Henriques,
P. H. O. Rappl,
E. Abramof
Abstract:
A time-resolved optical pump-probe technique has been applied for studying the ultrafast dynamics in the magnetic semiconductor EuTe near the absorption band gap. We show that application of external magnetic field up to 6 T results in crossover from the inverse Faraday effect taking place on the femtosecond time scale to the optical orientation phenomenon with an evolution in the picosecond time…
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A time-resolved optical pump-probe technique has been applied for studying the ultrafast dynamics in the magnetic semiconductor EuTe near the absorption band gap. We show that application of external magnetic field up to 6 T results in crossover from the inverse Faraday effect taking place on the femtosecond time scale to the optical orientation phenomenon with an evolution in the picosecond time domain. We propose a model which includes both these processes possessing different spectral and temporal properties. The circularly polarized optical pum** induces the optical electronic transition $4f^75d^0 \rightarrow 4f^65d^1$ forming the absorption band gap in EuTe. The observed crossover is related to a strong magnetic-field shift of the band gap in EuTe at low temperatures. It was found that manipulation of spin states on intrinsic defect levels takes place on a time scale of 19 ps in the applied magnetic field of 6 T.
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Submitted 7 March, 2018;
originally announced March 2018.
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Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis
Authors:
Sérgio L. Morelhão,
Celso I. Fornari,
Paulo H. O. Rappl,
Eduardo Abramof
Abstract:
Topological insulator surface properties are strongly correlated to structural properties, requiring high-resolution techniques capable of probing both surface and bulk structures at once. In this work, high flux of synchrotron source, recursive equations for fast X-ray dynamical diffraction simulation, and genetic algorithm for data fitting are combined to reveal the detailed structure of bismuth…
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Topological insulator surface properties are strongly correlated to structural properties, requiring high-resolution techniques capable of probing both surface and bulk structures at once. In this work, high flux of synchrotron source, recursive equations for fast X-ray dynamical diffraction simulation, and genetic algorithm for data fitting are combined to reveal the detailed structure of bismuth telluride epitaxic films with thickness ranging from 8 to 168 nm. It includes stacking sequences, thickness and composition of layers in model structures, interface coherence, surface termination and morphology. These results are in agreement with the surface morphology determined by atomic force microscopy. Moreover, by using X-ray data from zero noise area detector to construct three-dimensional reciprocal space maps, insights into the nanostructure of domains and stacking faults in Bi2Te3 films are given.
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Submitted 29 December, 2016;
originally announced December 2016.
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Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe
Authors:
B. Kaminski,
M. Lafrentz,
R. V. Pisarev,
D. R. Yakovlev,
V. V. Pavlov,
V. A. Lukoshkin,
A. B. Henriques,
G. Springholz,
G. Bauer,
E. Abramof,
P. H. O. Rappl,
M. Bayer
Abstract:
Spectroscopy of the centrosymmetric magnetic semiconductors EuTe and EuSe reveals spin-induced optical second harmonic generation (SHG) in the band gap vicinity at 2.1-2.4eV. The magnetic field and temperature dependence demonstrates that the SHG arises from the bulk of the materials due to a novel type of nonlinear optical susceptibility caused by the magnetic dipole contribution combined with…
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Spectroscopy of the centrosymmetric magnetic semiconductors EuTe and EuSe reveals spin-induced optical second harmonic generation (SHG) in the band gap vicinity at 2.1-2.4eV. The magnetic field and temperature dependence demonstrates that the SHG arises from the bulk of the materials due to a novel type of nonlinear optical susceptibility caused by the magnetic dipole contribution combined with spontaneous or induced magnetization. This spin-induced susceptibility opens access to a wide class of centrosymmetric systems by harmonics generation spectroscopy.
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Submitted 4 June, 2009;
originally announced June 2009.
