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Nucleation mechanism of multiple-order parameter ferroelectric domain wall motion in hafnia
Authors:
Songsong Zhou,
Andrew M. Rappe
Abstract:
Ferroelectric hafnia exhibits promising robust polarization and silicon compatibility for ferroelectric devices. Unfortunately, it suffers from difficult polarization switching. Methods to enable easier polarization switching are needed, and the underlying reason for this switching difficulty is not understood. Here, we investigated the 180$^\circ$ domain walls of hafnia and their motion through n…
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Ferroelectric hafnia exhibits promising robust polarization and silicon compatibility for ferroelectric devices. Unfortunately, it suffers from difficult polarization switching. Methods to enable easier polarization switching are needed, and the underlying reason for this switching difficulty is not understood. Here, we investigated the 180$^\circ$ domain walls of hafnia and their motion through nucleation. We found that the domains of multiple-order parameter hafnia possess complicated three-dimensional dipole patterns and lead to domain walls of different symmetry. The most common domain wall type is a complex domain wall involving reversal of both polarization and tetragonality order parameters. This domain wall symmetry ensures a good matching of the dipoles perpendicular to the domain wall, which leads to low domain wall energy. However, this ensures a sharp, high energy, charged domain wall on the edges of nuclei that results in difficult nucleation. Thus, this domain wall is too stable to move, which explains the switching difficulty of hafnia. By contrast, another simple domain wall, involving only polarization reversal, has a poor matching of dipoles perpendicular to the domain wall. This leads to higher domain wall energy and ensures a diffusive and low energy charged domain wall that enables easier nucleation. This simple domain wall is thus not too stable and easier to move. Our theory advances domain wall nucleation theory from the field of conventional single-order parameter to multiple-order parameters. We propose controlling the populations of different domain wall types in hafnia as a way to enable fast polarization switching and lower coercive fields.
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Submitted 23 April, 2024;
originally announced April 2024.
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Ultrafast Vibrational Control of Hybrid Perovskite Devices Reveals the Influence of the Organic Cation on Electronic Dynamics
Authors:
Nathaniel. P. Gallop,
Dmitry R. Maslennikov,
Katelyn P. Goetz,
Zhenbang Dai,
Aaron M. Schankler,
Woongmo Sung,
Satoshi Nihonyanagi,
Tahei Tahara,
Maryna Bodnarchuk,
Maksym Kovalenko,
Yana Vaynzof,
Andrew M. Rappe,
Artem A. Bakulin
Abstract:
Vibrational control (VC) of photochemistry through the optical stimulation of structural dynamics is a nascent concept only recently demonstrated for model molecules in solution. Extending VC to state-of-the-art materials may lead to new applications and improved performance for optoelectronic devices. Metal halide perovskites are promising targets for VC due to their mechanical softness and the r…
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Vibrational control (VC) of photochemistry through the optical stimulation of structural dynamics is a nascent concept only recently demonstrated for model molecules in solution. Extending VC to state-of-the-art materials may lead to new applications and improved performance for optoelectronic devices. Metal halide perovskites are promising targets for VC due to their mechanical softness and the rich array of vibrational motions of both their inorganic and organic sublattices. Here, we demonstrate the ultrafast VC of FAPbBr3 perovskite solar cells via intramolecular vibrations of the formamidinium cation using spectroscopic techniques based on vibrationally promoted electronic resonance. The observed short (~300 fs) time window of VC highlights the fast dynamics of coupling between the cation and inorganic sublattice. First-principles modelling reveals that this coupling is mediated by hydrogen bonds that modulate both lead halide lattice and electronic states. Cation dynamics modulating this coupling may suppress non-radiative recombination in perovskites, leading to photovoltaics with reduced voltage losses.
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Submitted 17 April, 2024;
originally announced April 2024.
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Inverted band gap trend through octahedral ordering in Cs$_2$Au$_2$X$_6$ (X=Cl, Br, I)
Authors:
Kazuki Morita,
Andrew M. Rappe
Abstract:
Double perovskites Cs$_2$Au$_2$X$_6$ (X=Cl, Br, I) are prototypical materials that exhibit charge disproportionation of gold into 1+ and 3+ states. It is known that the disproportionation is resolved under high pressures, and this has stimulated many studies into the pressurization of these materials. At present, the phase changes in these materials are still strongly contested. Here, we use densi…
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Double perovskites Cs$_2$Au$_2$X$_6$ (X=Cl, Br, I) are prototypical materials that exhibit charge disproportionation of gold into 1+ and 3+ states. It is known that the disproportionation is resolved under high pressures, and this has stimulated many studies into the pressurization of these materials. At present, the phase changes in these materials are still strongly contested. Here, we use density functional theory to study the pressure-dependent behavior of Cs$_2$Au$_2$X$_6$. We find that a tetragonal--cubic transition occurs directly from the ground state $I4/mmm$ structure. Even so, we also found an intermediate tetragonal $P4/mmm$ structure to be very close in energy, suggesting it to be observable. We also find several other competing metastable phases, which explains some of the controversies in the literature. Focusing on one of the metastable phases, we suggest that Cs$_2$Au$_2$X$_6$ can be prepared in a $P4_2/mnm$ structure, analogous to that of KCuF$_3$. The band gap in the $P4_2/mnm$ structure widened as atomic number of the halide was increased, which is the inverse trend compared to the ground state structure. We explain this by the different octahedral distortion ordering in the two structural phases. Furthermore, we show that the conduction band in $P4_2/mnm$ is three dimensionally connected, which is favorable for opto-electronic applications. We submit that this work demonstrates that octahedral distortion ordering is a promising avenue for develo** new double perovskites and suggests it to be particular effective in tuning the electronic structure properties.
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Submitted 15 May, 2024; v1 submitted 12 April, 2024;
originally announced April 2024.
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Ligand Equilibrium Influences Photoluminescence Blinking in CsPbBr3: A Change Point Analysis of Widefield Imaging Data
Authors:
Shaun Gallagher,
Jessica Kline,
Farzaneh Jahanbakhshi,
James C. Sadighian,
Ian Lyons,
Gillian Shen,
Andrew M. Rappe,
David S. Ginger
Abstract:
Photoluminescence intermittency remains one of the biggest challenges to realizing perovskite quantum dots (QDs) as scalable single photon emitters. We compare CsPbBr3 QDs capped with different ligands, lecithin, and a combination of oleic acid and oleylamine, to elucidate the role of surface chemistry on photoluminescence intermittency. We employ widefield photoluminescence microscopy, sampling t…
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Photoluminescence intermittency remains one of the biggest challenges to realizing perovskite quantum dots (QDs) as scalable single photon emitters. We compare CsPbBr3 QDs capped with different ligands, lecithin, and a combination of oleic acid and oleylamine, to elucidate the role of surface chemistry on photoluminescence intermittency. We employ widefield photoluminescence microscopy, sampling the blinking behavior of hundreds of QDs. Using change point analysis, we achieve the robust classification of blinking trajectories, and we analyze representative distributions from large numbers of QDs (Nlecithin = 1308, Noleic acid/oleylamine =1317). We find that lecithin suppresses blinking in CsPbBr3 QDs compared to oleic acid/oleylamine. Under common experimental conditions, lecithin-capped QDs are 7.5 times more likely to be non-blinking and spend 2.5 times longer in their most emissive state, despite both QDs having nearly identical solution photoluminescence quantum yields. We measure photoluminescence as a function of dilution and show that the differences between lecithin and oleic acid/oleylamine cap** emerge at low concentrations during preparation for single particle experiments. From experiment and first principles calculations, we attribute the differences in lecithin and oleic acid/oleylamine performance to differences in their ligand binding equilibria. Consistent with our experimental data, density functional theory calculations suggest a stronger binding affinity of lecithin to the QD surface compared to oleic acid/oleylamine, implying a reduced likelihood of ligand desorption during dilution. These results suggest that using more tightly binding ligands is a necessity for surface passivation and consequently, blinking reduction in perovskite QDs used for single particle and quantum light experiments.
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Submitted 11 April, 2024;
originally announced April 2024.
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Observation of polarization density waves in SrTiO3
Authors:
Gal Orenstein,
Viktor Krapivin,
Yi**g Huang,
Zhuquan Zhan,
Gilberto de la Pena Munoz,
Ryan A. Duncan,
Quynh Nguyen,
Jade Stanton,
Samuel Teitelbaum,
Hasan Yavas,
Takahiro Sato,
Matthias C. Hoffmann,
Patrick Kramer,
Jiahao Zhang,
Andrea Cavalleri,
Riccardo Comin,
Mark P. M. Dean,
Ankit S. Disa,
Michael Forst,
Steven L. Johnson,
Matteo Mitrano,
Andrew M. Rappe,
David Reis,
Diling Zhu,
Keith A. Nelson
, et al. (1 additional authors not shown)
Abstract:
The nature of the "failed" ferroelectric transition in SrTiO3 has been a long-standing puzzle in condensed matter physics. A compelling explanation is the competition between ferroelectricity and an instability with a mesoscopic modulation of the polarization. These polarization density waves, which should become especially strong near the quantum critical point, break local inversion symmetry and…
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The nature of the "failed" ferroelectric transition in SrTiO3 has been a long-standing puzzle in condensed matter physics. A compelling explanation is the competition between ferroelectricity and an instability with a mesoscopic modulation of the polarization. These polarization density waves, which should become especially strong near the quantum critical point, break local inversion symmetry and are difficult to probe with conventional x-ray scattering methods. Here we combine a femtosecond x-ray free electron laser (XFEL) with THz coherent control methods to probe inversion symmetry breaking at finite momenta and visualize the instability of the polarization on nanometer lengthscales in SrTiO3. We find polar-acoustic collective modes that are soft particularly at the tens of nanometer lengthscale. These precursor collective excitations provide evidence for the conjectured mesoscopic modulated phase in SrTiO3.
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Submitted 25 March, 2024;
originally announced March 2024.
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Strain fluctuations unlock ferroelectricity in wurtzites
Authors:
Steven M. Baksa,
Simon Gelin,
Seda Oturak,
Robert Jackson Spurling,
Alireza Sepehrinezhad,
Leonard Jacques,
Susan E. Trolier-McKinstry,
Adri C. T. van Duin,
Jon-Paul Maria,
Andrew M. Rappe,
Ismaila Dabo
Abstract:
Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film-thickness limitations, which impede polarization reversal under low applied voltage. Wurtzite materials, including magnesium-substituted zinc oxide (Zn,M…
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Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film-thickness limitations, which impede polarization reversal under low applied voltage. Wurtzite materials, including magnesium-substituted zinc oxide (Zn,Mg)O, have been shown to exhibit scalable ferroelectricity as thin films. In this work, we explain the origins of ferroelectricity in (Zn,Mg)O, showing that large strain fluctuations emerge locally in (Zn,Mg)O and can reduce local barriers to ferroelectric switching by more than 40%. We provide concurrent experimental and computational evidence of these effects by demonstrating polarization switching in ZnO/(Zn,Mg)O/ZnO heterostructures featuring built-in interfacial strain gradients. These results open up an avenue to develop scalable ferroelectrics by controlling strain fluctuations atomistically.
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Submitted 11 July, 2024; v1 submitted 9 November, 2023;
originally announced November 2023.
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Automated Discovery of Wurtzite Solid Solutions with Enhanced Piezoelectric Response
Authors:
Drew Behrendt,
Sayan Banerjee,
Jiahao Zhang,
Andrew M. Rappe
Abstract:
While many piezoelectric materials are known, there is still great potential to improve on the figures of merit of existing materials through compositional do**, forming solid solutions. Specifically, it has been shown that do** and alloying wurtzite-structured materials can improve the piezoelectric response; however, a vast compositional space has remained unexplored. In this work, we apply…
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While many piezoelectric materials are known, there is still great potential to improve on the figures of merit of existing materials through compositional do**, forming solid solutions. Specifically, it has been shown that do** and alloying wurtzite-structured materials can improve the piezoelectric response; however, a vast compositional space has remained unexplored. In this work, we apply a multi-level screening protocol combining machine learning, chemical intuition, and thermodynamics to systematically discover dopant combinations in wurtzite material space that improve the desired piezoelectric response. Through our protocol, we use computationally inexpensive screening calculations to consider more than 3000 possible ternary wurtzite solid solutions from 9 different wurtzite base systems: AlN, BeO, CdS, CdSe, GaN, ZnO, ZnS, ZnSe, and AgI. Finally, based on thermodynamic analysis and explicit piezoelectric response calculations, we predict 11 materials with improved piezoelectric response, due to the incorporation of electropositive dopants.
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Submitted 6 September, 2023;
originally announced September 2023.
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Controllable Topological Insulator Phases in Litharge-phase InBi Monolayer
Authors:
Zhenyao Fang,
Andrew M. Rappe
Abstract:
Despite recent advances of layered square-net topological material models that possess ideal semimetallic electronic structures and promising potential in material applications, the identification of experimentally accessible two-dimensional square-net materials with related topological properties has proven challenging. Due to the highly tunable physical and topological properties of III-V semico…
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Despite recent advances of layered square-net topological material models that possess ideal semimetallic electronic structures and promising potential in material applications, the identification of experimentally accessible two-dimensional square-net materials with related topological properties has proven challenging. Due to the highly tunable physical and topological properties of III-V semiconductors, we revisit the class of III-V materials and observe that the litharge-phase InBi is a layered square-net material and can be exfoliated into the InBi monolayer. We present a comprehensive first-principles study of the energy landscape of the InBi monolayer. We identify a paraelastic phase and three ferroelastic phases and study their topological properties. Specifically, we show that the paraelastic InBi monolayer is a trivial insulator due to the orbital-ordering-induced band inversion occurring between states with the same parity. Substituting one Bi atom per cell with another V-group element (N, P, As) or applying an electric field that breaks the inversion symmetry and changes the orbital onsite energy, the paraelastic InBi monolayer can be driven into the topological insulator phase. Furthermore, one of the ferroelastic phases of pure InBi, which can be obtained by gently straining the paraelastic phase, also possesses such topological insulating properties. These results provide several experimentally accessible routes to tune the nontrivial topology in the InBi monolayer, including creating heterostructures with piezoelectric or ferroelectric substrates and applying mechanical strain, making the InBi monolayer an ideal platform to study the interplay of reduced dimensionality, square-net chemical bonding networks, and band topology.
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Submitted 2 July, 2023; v1 submitted 28 April, 2023;
originally announced April 2023.
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Two-dimensional carrier gas at a polar interface without surface band gap states: A first-principles perspective
Authors:
Federico Brivio,
Andrew Rappe,
Leeor Kronik,
Dan Ritter
Abstract:
We present first-principles calculations of the interface between GaN and strained AlN, using a slab model in which polarization is compensated via surface fractional-charge pseudo-hydrogen atoms. We show that an interface two-dimensional carrier electron or hole gas emerges naturally in response to different compensating surface charges, but that this need not involve in-gap surface states.
We present first-principles calculations of the interface between GaN and strained AlN, using a slab model in which polarization is compensated via surface fractional-charge pseudo-hydrogen atoms. We show that an interface two-dimensional carrier electron or hole gas emerges naturally in response to different compensating surface charges, but that this need not involve in-gap surface states.
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Submitted 7 March, 2023;
originally announced March 2023.
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Range-Separated Hybrid Functional Pseudopotentials
Authors:
Yang Yang,
Georgia Prokopiou,
Tian Qiu,
Aaron M. Schankler,
Andrew M. Rappe,
Leeor Kronik,
Robert A. DiStasio Jr
Abstract:
Consistency between the exchange-correlation (xc) functional used during pseudopotential construction and planewave-based electronic structure calculations is important for an accurate and reliable description of the structure and properties of condensed-phase systems. In this work, we present a general scheme for constructing pseudopotentials with range-separated hybrid (RSH) xc functionals based…
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Consistency between the exchange-correlation (xc) functional used during pseudopotential construction and planewave-based electronic structure calculations is important for an accurate and reliable description of the structure and properties of condensed-phase systems. In this work, we present a general scheme for constructing pseudopotentials with range-separated hybrid (RSH) xc functionals based on the solution of the all-electron radial integro-differential equation for a spherical atomic configuration. As proof-of-principle, we demonstrate pseudopotential construction with the PBE, PBE0, HSE, and sRSH (based on LC-$ω$PBE0) xc functionals for a select set of atoms, and then investigate the importance of pseudopotential consistency when computing band gaps, equilibrium lattice parameters, bulk moduli, and atomization energies of several solid-state systems. In doing so, we find that pseudopotential consistency errors (PSCE) tend to be systematic and can be as large as $1.4\%$ when computing these properties.
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Submitted 22 February, 2023;
originally announced February 2023.
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Discovery of enhanced lattice dynamics in a single-layered hybrid perovskite
Authors:
Zhuquan Zhang,
Jiahao Zhang,
Zi-Jie Liu,
Nabeel S. Dahodl,
Watcharaphol Paritmongkol,
Niamh Brown,
Yu-Che Chien,
Zhenbang Dai,
Keith A. Nelson,
William A. Tisdale,
Andrew M. Rappe,
Edoardo Baldini
Abstract:
Layered hybrid perovskites have attracted much attention in recent years due to their emergent physical properties and exceptional functional performances, but the coexistence of lattice order and structural disorder severely hinders our understanding of these materials. One unsolved problem regards how the lattice dynamics are affected by the dimensional engineering of the inorganic frameworks an…
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Layered hybrid perovskites have attracted much attention in recent years due to their emergent physical properties and exceptional functional performances, but the coexistence of lattice order and structural disorder severely hinders our understanding of these materials. One unsolved problem regards how the lattice dynamics are affected by the dimensional engineering of the inorganic frameworks and the interaction with the molecular moieties. Here, we address this question by using a combination of high-resolution spontaneous Raman scattering, high-field terahertz spectroscopy, and molecular dynamics simulations. This approach enables us to reveal the structural vibrations and disorder in and out of equilibrium and provides surprising observables that differentiate single- and double-layered perovskites. While no distinct vibrational coherence is observed in double-layer perovskites, we discover that an off-resonant terahertz pulse can selectively drive a long-lived coherent phonon mode through a two-photon process in the single-layered system. This difference highlights the dramatic change in the lattice environment as the dimension is reduced. The present findings pave the way for the ultrafast structural engineering of hybrid lattices as well as for develo** high-speed optical modulators based on layered perovskites.
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Submitted 9 January, 2023;
originally announced January 2023.
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Ab initio study of proton-exchanged LiNbO3(I): Structural, thermodynamic, dielectric, and optical properties
Authors:
Lingyuan Gao,
Robert B. Wexler,
Ruixiang Fei,
Andrew M. Rappe
Abstract:
Using first principles calculations, we study the ground-state structure of bulk proton-exchanged lithium niobate, which is also called hydrogen niobate and is widely used in waveguides. Thermodynamics helps to establish the most favorable nonpolar surface as well as the water-deficient and water-rich phases under different ambient conditions, which we refer to as "dehydrated" and "rehydrated" pha…
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Using first principles calculations, we study the ground-state structure of bulk proton-exchanged lithium niobate, which is also called hydrogen niobate and is widely used in waveguides. Thermodynamics helps to establish the most favorable nonpolar surface as well as the water-deficient and water-rich phases under different ambient conditions, which we refer to as "dehydrated" and "rehydrated" phases, respectively. We compute the low-frequency dielectric response and the optical refractive indices of hydrogen niobate in different phases. The dielectric constant is greatly enhanced compared to lithium niobate. At shorter wavelengths, the refractive indices vary between each phase and have a sharp contrast to lithium niobate. Our study characterizes the structures and thermal instabilities of this compound and reveals its excellent dielectric and optical properties, which can be important in the future application in waveguides.
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Submitted 7 November, 2022;
originally announced November 2022.
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Magnetic Bulk Photovoltaic Effect: Strong and Weak Field
Authors:
Zhenbang Dai,
Andrew M. Rappe
Abstract:
Shift current and ballistic current have been proposed to explain the bulk photovoltaic effect (BPVE), and there have been experiments designed to separate the two mechanisms. These experiments are based on the assumption that under magnetic field, ballistic current can have a Hall effect while the shift current cannot, which is from some energy-scale arguments and has never been proven. A recent…
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Shift current and ballistic current have been proposed to explain the bulk photovoltaic effect (BPVE), and there have been experiments designed to separate the two mechanisms. These experiments are based on the assumption that under magnetic field, ballistic current can have a Hall effect while the shift current cannot, which is from some energy-scale arguments and has never been proven. A recent work [Phys. Rev. B 103, 195203 (2021)] using quantum transport formalism achieves a conclusion that shift current indeed has a Hall current, seemingly contradicting the previous assumption and making the situation more confusing. Moreover, the behavior of BPVE under strong magnetic field is still unexplored. In this Letter, using a minimal 2D tight-binding model, we carry out a systematic numerical study of the BPVE under weak and strong magnetic field by treating the field in a non-perturbative way. Our model clearly shows the appearance of the magnetically-induced ballistic current along the transverse direction, which agrees with the previous predictions, and interestingly a sizable longitudinal response of the shift current is also observed, a phenomenon that is not captured by any existing theories where the magnetic field is treated perturbatively. More surprisingly, drastically different shift current is found in the strong-field regime, and the evolution from weak to strong field resembles a phase transition. We hope that our work could resolve the debate over the behavior of BPVE under magnetic field, and the strong-field behavior of shift current is expected to inspire more studies on the relation between nonlinear optics and quantum geometry.
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Submitted 24 June, 2022;
originally announced June 2022.
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Recent Progress in the Theory of Bulk Photovoltaic Effect
Authors:
Zhenbang Dai,
Andrew M. Rappe
Abstract:
The bulk photovoltaic effect (BPVE) occurs in solids with broken inversion symmetry and refers to DC current generation due to uniform illumination, without the need of heterostructures or interfaces, a feature that is distinct from the traditional photovoltaic effect. Its existence has been demonstrated almost 50 years ago, but predictive theories only appeared in the last ten years, allowing for…
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The bulk photovoltaic effect (BPVE) occurs in solids with broken inversion symmetry and refers to DC current generation due to uniform illumination, without the need of heterostructures or interfaces, a feature that is distinct from the traditional photovoltaic effect. Its existence has been demonstrated almost 50 years ago, but predictive theories only appeared in the last ten years, allowing for the identification of different mechanisms and the determination of their relative importance in real materials. It is now generally accepted that there is an intrinsic mechanism that is insensitive to scattering, called shift current, where first-principles calculations can now give highly accurate predictions. Another important but more extrinsic mechanism, called ballistic current, is also attracting a lot of attention, but due to the complicated scattering processes, its numerical calculation for real materials is only made possible quite recently. In addition, an intrinsic ballistic current, usually referred to as injection current, will appear under circularly-polarized light and has wide application in experiments. In this article, experiments that are pertinent to the theory development are reviewed, and a significant portion is devoted to discussing the recent progress in the theories of BPVE and their numerical implementations. As a demonstration of the capability of the newly developed theories, a brief review of the materials design strategies enabled by the theory development is given. Finally, remaining questions in the BPVE field and possible future directions are discussed to inspire further investigations.
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Submitted 1 June, 2022;
originally announced June 2022.
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Li iontronics in single-crystalline T-Nb2O5 thin films with vertical ionic transport channels
Authors:
Hyeon Han,
Quentin Jacquet,
Zhen Jiang,
Farheen N. Sayed,
Arpit Sharma,
Aaron M. Schankler,
Arvin Kakekhani,
Holger L. Meyerheim,
Jae-Chun Jeon,
Jucheol Park,
Sang Yeol Nam,
Kent J. Griffith,
Laura Simonelli,
Andrew M. Rappe,
Clare P. Grey,
Stuart S. P. Parkin
Abstract:
The niobium oxide polymorph T-Nb2O5 has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure that has two-dimensional (2D) layers with very low steric hindrance allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its elec…
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The niobium oxide polymorph T-Nb2O5 has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure that has two-dimensional (2D) layers with very low steric hindrance allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its electronic applications have not yet been realized, likely due to its large orthorhombic unit cell along with the existence of many polymorphs. Here we demonstrate the epitaxial growth of single-crystalline T-Nb2O5 thin films, critically with the ionic transport channels oriented perpendicular to the film's surface. These vertical 2D channels enable fast Li-ion migration which we show gives rise to a colossal insulator-metal transition where the resistivity drops by eleven orders of magnitude due to the population of the initially empty Nb 4d0 states by electrons. Moreover, we reveal multiple unexplored phase transitions with distinct crystal and electronic structures over a wide range of Li-ion concentrations by comprehensive in situ experiments and theoretical calculations, that allow for the reversible and repeatable manipulation of these phases and their distinct electronic properties. This work paves the way to the exploration of novel thin films with ionic channels and their potential applications.
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Submitted 2 August, 2023; v1 submitted 7 March, 2022;
originally announced March 2022.
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First Principles Calculation of Ballistic Current from Electron-Hole Interaction
Authors:
Zhenbang Dai,
Andrew M. Rappe
Abstract:
The bulk photovoltaic effect (BPVE) has attracted an increasing interest due to its potential to overcome the efficiency limit of traditional photovoltaics, and much effort has been devoted to understanding its underlying physics. However, previous work has shown that theoretical models of the shift current and the phonon-assisted ballistic current in real materials do not fully account for the ex…
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The bulk photovoltaic effect (BPVE) has attracted an increasing interest due to its potential to overcome the efficiency limit of traditional photovoltaics, and much effort has been devoted to understanding its underlying physics. However, previous work has shown that theoretical models of the shift current and the phonon-assisted ballistic current in real materials do not fully account for the experimental BPVE photocurrent, and so other mechanisms should be investigated in order to obtain a complete picture of BPVE. In this Letter, we demonstrate two approaches that enable the ab initio calculation of the ballistic current originating from the electron-hole interaction in semiconductors. Using BaTiO$_3$ and MoS$_2$ as two examples, we show clearly that for them the asymmetric scattering from electron-hole interaction is less appreciable than that from electron-phonon interaction, indicating more scattering processes need to be included to further improve the BPVE theory. Moreover, our approaches build up a venue for predicting and designing materials with larger ballistic current due to electron-hole interactions.
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Submitted 23 February, 2021;
originally announced February 2021.
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Intrinsic Fermi Surface Contribution to the Bulk Photovoltaic Effect
Authors:
Lingyuan Gao,
Zachariah Addison,
E. J. Mele,
Andrew M. Rappe
Abstract:
We study the Fermi surface contribution to the nonlinear DC photocurrent at quadratic order in a spatially uniform optical field in the ultra-clean limit. In addition to shift and injection current, we find that polarized light incident on a metallic system generates an intrinsic contribution to the bulk photovoltaic effect deriving from photoinduced electronic transitions on the Fermi surface. In…
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We study the Fermi surface contribution to the nonlinear DC photocurrent at quadratic order in a spatially uniform optical field in the ultra-clean limit. In addition to shift and injection current, we find that polarized light incident on a metallic system generates an intrinsic contribution to the bulk photovoltaic effect deriving from photoinduced electronic transitions on the Fermi surface. In {velocity} gauge, this contribution originates in both the coherent band off-diagonal and diagonal parts of the density matrix, describing respectively, the coherent wave function evolution and the carrier dynamics of an excited population. We derive a formula for the intrinsic Fermi surface contribution for a time-reversal invariant chiral Weyl semimetal illuminated with circularly-polarized light. At low frequency, this response is proportional to the frequency of the driving field, with its sign determined by the topological charge of the Weyl nodes and with its magnitude being comparable to the recently discovered quantized circular photogalvanic effect. Our work presents a complete derivation for all contributions to nonlinear DC photocurrent and classify them according to the polarization of light in the presence and absence of TRS.
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Submitted 4 December, 2021; v1 submitted 12 November, 2020;
originally announced November 2020.
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Large Bulk Piezophotovoltaic Effect of Monolayer $2H$-MoS$_2$
Authors:
Aaron M. Schankler,
Lingyuan Gao,
Andrew M. Rappe
Abstract:
The bulk photovoltaic effect in noncentrosymmetric materials is an intriguing physical phenomenon that holds potential for high-efficiency energy harvesting. Here, we study the shift current bulk photovoltaic effect in the transition metal dichalcogenide MoS$_2$. We present a simple automated method to guide materials design and use it to uncover a distortion to monolayer $2H$-MoS$_2$ that dramati…
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The bulk photovoltaic effect in noncentrosymmetric materials is an intriguing physical phenomenon that holds potential for high-efficiency energy harvesting. Here, we study the shift current bulk photovoltaic effect in the transition metal dichalcogenide MoS$_2$. We present a simple automated method to guide materials design and use it to uncover a distortion to monolayer $2H$-MoS$_2$ that dramatically enhances the integrated shift current. Using this distortion, we show that overlap in the Brillouin zone of the distributions of the shift vector (a quantity measuring the net displacement in real space of coherent wave packets during excitation) and the transition intensity is crucial for increasing the shift current. The distortion pattern is related to the material polarization and can be realized through an applied electric field via the converse piezoelectric effect. This finding suggests an additional method to engineer the shift current response of materials to augment previously reported methods using mechanical strain.
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Submitted 18 January, 2021; v1 submitted 24 September, 2020;
originally announced September 2020.
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Negative piezoelectricity in low--dimensional materials
Authors:
Yubo Qi,
Andrew M. Rappe
Abstract:
In this study, we investigate the underlying mechanisms of the negative piezoelectricity in low--dimensional materials by carrying out first--principles calculations. Two--dimensional ferroelectric CuInP$_2$S$_6$ is analyzed in detail as a typical example, but the theory can be applied to all other low--dimensional piezoelectrics. Similar to three--dimensional piezoelectrics with negative piezoele…
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In this study, we investigate the underlying mechanisms of the negative piezoelectricity in low--dimensional materials by carrying out first--principles calculations. Two--dimensional ferroelectric CuInP$_2$S$_6$ is analyzed in detail as a typical example, but the theory can be applied to all other low--dimensional piezoelectrics. Similar to three--dimensional piezoelectrics with negative piezoelectric responses, the anomalous negative piezoelectricity in CuInP$_2$S$_6$ results from its negative clamped--ion term, which cannot be compensated by the positive internal strain part. Here, we propose a more general rule that having a negative clamped--ion term should be universal among piezoelectric materials, which is attributed to the "lag of Wannier center" effect. The internal--strain term, which is the change in polarization due to structural relaxation in response to strain, is mostly determined by the spatial structure and chemical bonding of the material. In a low--dimensional piezoelectric material as CuInP$_2$S$_6$, the internal--strain term is approximately zero. This is because the internal structure of the molecular layers, which are bonded by the weak van der Waals interaction, responds little to the strain. As a result, the magnitude of the dipole, which depends strongly on the dimension and structure of the molecular layer, also has a small response with respect to strain. An equation bridging the internal strain responses in low--dimensional and three--dimensional piezoelectrics is also derived to analytically express this point. This work aims to deepen our understanding about this anomalous piezoelectric effect, especially in low--dimensional materials, and provide strategies for discovering materials with novel electromechanical properties.
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Submitted 19 April, 2021; v1 submitted 21 September, 2020;
originally announced September 2020.
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Phonon-Assisted Ballistic Current From First Principles Calculations
Authors:
Zhenbang Dai,
Aaron M. Schankler,
Lingyuan Gao,
Liang Z. Tan,
Andrew M. Rappe
Abstract:
The bulk photovoltaic effect (BPVE) refers to current generation due to illumination by light in a homogeneous bulk material lacking inversion symmetry. In addition to the intensively studied shift current, the ballistic current, which originates from asymmetric carrier generation due to scattering processes, also constitutes an important contribution to the overall kinetic model of the BPVE. In t…
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The bulk photovoltaic effect (BPVE) refers to current generation due to illumination by light in a homogeneous bulk material lacking inversion symmetry. In addition to the intensively studied shift current, the ballistic current, which originates from asymmetric carrier generation due to scattering processes, also constitutes an important contribution to the overall kinetic model of the BPVE. In this letter, we use a perturbative approach to derive a formula for the ballistic current resulting from the intrinsic electron-phonon scattering in a form amenable to first-principles calculation. We then implement the theory and calculate the ballistic current of the prototypical BPVE material \ch{BaTiO3} using quantum-mechanical density functional theory. The magnitude of the ballistic current is comparable to that of shift current, and the total spectrum (shift plus ballistic) agrees well with the experimentally measured photocurrents. Furthermore, we show that the ballistic current is sensitive to structural change, which could benefit future photovoltaic materials design.
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Submitted 13 December, 2020; v1 submitted 1 July, 2020;
originally announced July 2020.
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The shift photovoltaic current and magnetically-induced bulk photocurrent in piezoelectric sillenite crystals
Authors:
Aaron M. Burger,
Lingyuan Gao,
Radhe Agarwal,
Alexey Aprelev,
Jonathan E. Spanier,
Andrew M. Rappe,
Vladimir M. Fridkin
Abstract:
Recently, it has been shown how shift and ballistic currents in piezoelectric sillenite crystals Bi$_{12}$GeO$_{20}$ and Bi$_{12}$SiO$_{20}$ can be separated experimentally under the assumption that the shift component of the circular current is small. However, it has been claimed that the shift and ballistic currents cannot be quantified by this method, due to the magneto-photovoltaic effect caus…
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Recently, it has been shown how shift and ballistic currents in piezoelectric sillenite crystals Bi$_{12}$GeO$_{20}$ and Bi$_{12}$SiO$_{20}$ can be separated experimentally under the assumption that the shift component of the circular current is small. However, it has been claimed that the shift and ballistic currents cannot be quantified by this method, due to the magneto-photovoltaic effect caused either by the change of the crystal's spatial symmetry in the magnetic field or by the breaking of time-reversal symmetry. Presently, we report observations of photovoltaic currents in Bi$_{12}$SiO$_{20}$, excited by linearly- and circularly-polarized light under weak external magnetic field, as well as measurements of the corresponding photo-Hall signals. We demonstrate that the magneto-photovoltaic current constitutes a significant fraction of the measured current in the Hall direction for Bi$_{12}$SiO$_{20}$ under specific experimental conditions.
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Submitted 17 May, 2020;
originally announced May 2020.
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Optical signatures of multifold fermions in the chiral topological semimetal CoSi
Authors:
B. Xu,
Z. Fang,
M. A. Sánchez-Martínez,
J. W. F. Venderbos,
Z. Ni,
T. Qiu,
K. Manna,
K. Wang,
J. Paglione,
C. Bernhard,
C. Felser,
E. J. Mele,
A. G. Grushin,
A. M. Rappe,
Liang Wu
Abstract:
We report the optical conductivity in high-quality crystals of the chiral topological semimetal CoSi, which hosts exotic quasiparticles known as multifold fermions. We find that the optical response is separated into several distinct regions as a function of frequency, each dominated by different types of quasiparticles. The low-frequency intraband response is captured by a narrow Drude peak from…
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We report the optical conductivity in high-quality crystals of the chiral topological semimetal CoSi, which hosts exotic quasiparticles known as multifold fermions. We find that the optical response is separated into several distinct regions as a function of frequency, each dominated by different types of quasiparticles. The low-frequency intraband response is captured by a narrow Drude peak from a high-mobility electron pocket of double Weyl quasi-particles, and the temperature dependence of the spectral weight is consistent with its Fermi velocity. By subtracting the low-frequency sharp Drude and phonon peaks at low temperatures, we reveal two intermediate quasi-linear inter-band contributions separated by a kink at 0.2 eV. Using Wannier tight-binding models based on first-principle calculations, we link the optical conductivity above and below 0.2 eV to interband transitions near the double Weyl fermion and a threefold fermion, respectively. We analyze and determine the chemical potential relative to the energy of the threefold fermion, revealing the importance of transitions between a linearly dispersing band and a flat band. More strikingly, below 0.1 eV our data are best explained if spin-orbit coupling is included, suggesting that at these energies the optical response is governed by transitions between a previously unobserved four-fold spin-3/2 node and a Weyl node. Our comprehensive combined experimental and theoretical study provides a way to resolve different types of multifold fermions in CoSi at different energy. More broadly our results provide the necessary basis to interpret the burgeoning set of optical and transport experiments in chiral topological semimetals.
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Submitted 20 October, 2020; v1 submitted 4 May, 2020;
originally announced May 2020.
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The tetragonal phase of CH$_{3}$NH$_{3}$PbI$_{3}$ is strongly anharmonic
Authors:
Rituraj Sharma,
Zhenbang Dai,
Lingyuan Gao,
Thomas M. Brenner,
Lena Yadgarov,
Jiahao Zhang,
Yevgeny Rakita,
Roman Korobko,
Andrew M. Rappe,
Omer Yaffe
Abstract:
Halide perovskite (HP) semiconductors exhibit unique strong coupling between the electronic and structural dynamics. The high-temperature cubic phase of HPs is known to be entropically stabilized, with imaginary frequencies in the calculated phonon dispersion relation. Similar calculations, based on the static average crystal structure, predict a stable tetragonal phase with no imaginary modes. Th…
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Halide perovskite (HP) semiconductors exhibit unique strong coupling between the electronic and structural dynamics. The high-temperature cubic phase of HPs is known to be entropically stabilized, with imaginary frequencies in the calculated phonon dispersion relation. Similar calculations, based on the static average crystal structure, predict a stable tetragonal phase with no imaginary modes. This work shows that in contrast to standard theory predictions, the room-temperature tetragonal phase of CH$_{3} $NH$_{3} $PbI$_{3}$ is strongly anharmonic. We use Raman polarization-orientation (PO) measurements and \textit{ab initio} molecular dynamics (AIMD) to investigate the origin and temperature evolution of the strong structural anharmonicity throughout the tetragonal phase. Raman PO measurements reveal a new spectral feature that resembles a soft mode. This mode shows an unusual continuous increase in dam** with temperature which is indicative of an anharmonic potential surface. The analysis of AIMD trajectories identifies two major sources of anharmonicity: the orientational unlocking of the [CH$_{3} $NH$_{3}$]$^+$ ions and large amplitude octahedral tilting that continuously increases with temperature. Our work suggests that the standard phonon picture cannot describe the structural dynamics of tetragonal CH$_{3} $NH$_{3} $PbI$_{3}$.
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Submitted 15 May, 2020; v1 submitted 13 January, 2020;
originally announced January 2020.
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Halide perovskites under polarized light: Vibrational symmetry analysis using polarized Raman
Authors:
Rituraj Sharma,
Matan Menahem,
Zhenbang Dai,
Lingyuan Gao,
Thomas M. Brenner,
Lena Yadgarov,
Jiahao Zhang,
Yevgeny Rakita,
Roman Korobko,
Iddo Pinkas,
Andrew M. Rappe,
Omer Yaffe
Abstract:
In the last decade, hybrid organic-inorganic halide perovskites have emerged as a new type of semiconductor for photovoltaics and other optoelectronic applications. Unlike standard, tetrahedrally bonded semiconductors (e.g. Si and GaAs), the ionic thermal fluctuations in the halide perovskites (i.e. structural dynamics) are strongly coupled to the electronic dynamics. Therefore, it is crucial to o…
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In the last decade, hybrid organic-inorganic halide perovskites have emerged as a new type of semiconductor for photovoltaics and other optoelectronic applications. Unlike standard, tetrahedrally bonded semiconductors (e.g. Si and GaAs), the ionic thermal fluctuations in the halide perovskites (i.e. structural dynamics) are strongly coupled to the electronic dynamics. Therefore, it is crucial to obtain accurate and detailed knowledge about the nature of atomic motions within the crystal. This has proved to be challenging due to low thermal stability and the complex, temperature dependent structural phase sequence of the halide perovskites. Here, these challenges are overcome and a detailed analysis of the mode symmetries is provided in the low-temperature orthorhombic phase of methylammonium-lead iodide. Raman measurements using linearly- and circularly- polarized light at 1.16 eV excitation are combined with density functional perturbation theory (DFPT). By performing an iterative analysis of Raman polarization-orientation dependence and DFPT mode analysis, the crystal orientation is determined. Subsequently, accounting for birefringence effects detected using circularly polarized light excitation, the symmetries of all the observed Raman-active modes at 10 K are assigned.
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Submitted 8 December, 2019; v1 submitted 1 December, 2019;
originally announced December 2019.
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Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys
Authors:
Zhenyao Fang,
Heng Gao,
Jörn W. F. Venderbos,
Andrew M. Rappe
Abstract:
Despite the growing interest in topological materials, the difficulty of experimentally synthesizing and integrating them with other materials has been one of the main barriers restricting access to their unique properties. Recent advances in synthesizing metastable phases of crystalline materials can help to overcome this barrier and offer new platforms to experimentally study and manipulate band…
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Despite the growing interest in topological materials, the difficulty of experimentally synthesizing and integrating them with other materials has been one of the main barriers restricting access to their unique properties. Recent advances in synthesizing metastable phases of crystalline materials can help to overcome this barrier and offer new platforms to experimentally study and manipulate band topology. Because III-V semiconductors have a wide range of functional material applications (including optoelectronic devices, light-emitting diodes, and highly efficient solar cells), and because Bi-doped III-V materials can be synthesized by ion plantation and ion-cutoff methods, we revisit the effect of bismuth substitution in metastable III-V semiconductors. Through first-principles calculation methods, we show that in wurtzite structure III-V materials, Bi substitution can lead to band inversion phenomena and induce nontrivial topological properties. Specifically, we identify that GaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence of Dirac points and Weyl points, and $\text{GaAs}_{0.5} \text{Bi}_{0.5}$, $\text{GaSb}_{0.5} \text{Bi}_{0.5}$, $\text{InSb}_{0.5} \text{Bi}_{0.5}$ are triple-point semimetals, characterized by two sets of "near Dirac" triple points on the Fermi level. These experimentally-accessible bismuth-based topological semimetals can be integrated into the large family of functional III-V materials for experimental studies of heterostructures and future optoelectronic applications.
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Submitted 5 November, 2019;
originally announced November 2019.
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A Robust and Unified Solution for Choosing the Phases of Adiabatic States as a Function of Geometry: Extending Parallel Transport Concepts to the cases of Trivial & Near Trivial Crossings
Authors:
Zeyu Zhou,
Zuxin **,
Tian Qiu,
Andrew M. Rappe,
Joseph Eli Subotnik
Abstract:
We investigate a simple and robust scheme for choosing the phases of adiabatic electronic states smoothly (as a function of geometry) so as to maximize the performance of ab initio non-adiabatic dynamics methods. Our approach is based upon consideration of the overlap matrix ($\mathbf{U}$) between basis functions at successive points in time and selecting the phases so as to minimize the matrix no…
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We investigate a simple and robust scheme for choosing the phases of adiabatic electronic states smoothly (as a function of geometry) so as to maximize the performance of ab initio non-adiabatic dynamics methods. Our approach is based upon consideration of the overlap matrix ($\mathbf{U}$) between basis functions at successive points in time and selecting the phases so as to minimize the matrix norm of $\log(\mathbf{U})$. In so doing, one can extend the concept of parallel transport to cases with sharp curve crossings. We demonstrate that this algorithm performs well under extreme situations where dozens of states cross each other either through trivial crossings (where there is zero effective diabatic coupling), or through nontrivial crossings (when there is a nonzero diabatic coupling), or through a combination of both. In all cases, we compute the time-derivative coupling matrix elements (or equivalently non-adiabatic derivative coupling matrix elements) that are as smooth as possible. Our results should be of interest to all who are interested in either non-adiabatic dynamics, or more generally, parallel transport in large systems.
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Submitted 24 September, 2019;
originally announced September 2019.
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Domain Wall Enabled Steep Slope Switching in MoS$_2$ Transistors Towards Hysteresis-Free Operation
Authors:
**gfeng Song,
Yubo Qi,
Zhiyong Xiao,
Kun Wang,
Dawei Li,
Seung-Hyun Kim,
Angus I. Kingon,
Andrew M. Rappe,
Xia Hong
Abstract:
The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation mechanisms remain a central topic of debate. In this work, we report steep slope switching in MoS$_2$ transistors back-gated by single-layer polycrystalline Pb…
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The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation mechanisms remain a central topic of debate. In this work, we report steep slope switching in MoS$_2$ transistors back-gated by single-layer polycrystalline PbZr$_{0.35}$Ti$_{0.65}$O$_3$. The devices exhibit current on/off ratios up to 8$\times$10$^6$ within an ultra-low gate voltage window of $V_g$ = $\pm$0.5 V and subthreshold swing (SS) as low as 9.7 mV decade$^{-1}$ at room temperature, transcending the 60 mV decade$^{-1}$ Boltzmann limit without involving additional dielectric layers. Theoretical modeling reveals the dominant role of the metastable polar states within domain walls in enabling the NC mode, which is corroborated by the relation between SS and domain wall density. Our findings shed light on a hysteresis-free mechanism for NC operation, providing a simple yet effective material strategy for develo** low-power 2D nanoelectronics.
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Submitted 24 December, 2022; v1 submitted 30 August, 2019;
originally announced September 2019.
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Sr-induced dipole scatter in BST: Insights from MD simulations using a transferable bond valence-based interatomic potential
Authors:
Robert B. Wexler,
Yubo Qi,
Andrew M. Rappe
Abstract:
In order to design next-generation ferroelectrics, a microscopic understanding of their macroscopic properties is critical. One means to achieving an atomistic description of ferroelectric and dielectric phenomena is classical molecular dynamics simulations. Previously, we have shown that interatomic potentials based on the bond valence molecular dynamics (BVMD) method can be used to study structu…
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In order to design next-generation ferroelectrics, a microscopic understanding of their macroscopic properties is critical. One means to achieving an atomistic description of ferroelectric and dielectric phenomena is classical molecular dynamics simulations. Previously, we have shown that interatomic potentials based on the bond valence molecular dynamics (BVMD) method can be used to study structural phase transitions, ferroelectric domain nucleation, and domain wall migration in several perovskite oxides and fixed-composition binary and ternary alloys. Most modern devices, however, use variable-composition perovskite oxide alloys such as Ba$_x$Sr$_{1-x}$TiO$_3$ (BST). In this paper, we extend our bond valence approach to BST solid solutions and, in so doing, show that the potential parameters for each element are transferable between materials with different $x$. Using this potential, we perform BVMD simulations investigating the temperature and composition dependence of the lattice constants, Ti displacements, and ferroelectric polarization of BST and find that our predictions match experiments and first-principles theory. Additionally, based on a detailed analysis of local dipole distributions, we demonstrate that substitution of Sr for Ba scrambles dipoles, reduces global polarization, and enhances the order-disorder character of the ferroelectric-paraelectric phase transition.
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Submitted 30 May, 2019;
originally announced May 2019.
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Epitaxial TiOx Surface in Ferroelectric BaTiO3: Native Structure and Dynamic Patterning at the Atomic Scale
Authors:
Maya Barzilay,
Tian Qiu,
Andrew M. Rappe,
Yachin Ivry
Abstract:
Surfaces and interfaces of ferroelectric oxides exhibit enhanced functionality, and therefore serve as a platform for novel nano and quantum technologies. Experimental and theoretical challenges associated with examining the subtle electro-chemo-mechanical balance at metal-oxide surfaces have hindered the understanding and control of their structure and behavior. Here, we combine advanced electron…
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Surfaces and interfaces of ferroelectric oxides exhibit enhanced functionality, and therefore serve as a platform for novel nano and quantum technologies. Experimental and theoretical challenges associated with examining the subtle electro-chemo-mechanical balance at metal-oxide surfaces have hindered the understanding and control of their structure and behavior. Here, we combine advanced electron-microscopy and first-principles thermodynamics methods to reveal the atomic-scale chemical and crystallographic structure of the surface of the seminal ferroelectric BaTiO3. We show that the surface is composed of a native < 2-nm thick TiOx rock-salt layer in epitaxial registry with the BaTiO3. Using electron-beam irradiation, we successfully patterned artificially TiOx sites with sub-nanometer resolution, by inducing Ba escape. Therefore, our work offers electro-chemo-mechanical insights into ferroelectric surface behavior in addition to a method for scalable high-resolution beam-induced chemical lithography for selectively driving surface phase transitions, and thereby functionalizing metal-oxide surfaces.
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Submitted 29 March, 2019;
originally announced March 2019.
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Terahertz-Field-Induced Ferroelectricity in Quantum Paraelectric SrTiO$_3$
Authors:
Xian Li,
Tian Qiu,
Jiahao Zhang,
Edoardo Baldini,
Jian Lu,
Andrew M. Rappe,
Keith A. Nelson
Abstract:
"Hidden phases" are metastable collective states of matter that are typically not accessible on equilibrium phase diagrams. These phases can host exotic properties in otherwise conventional materials and hence may enable novel functionality and applications, but their discovery and access are still in early stages. Using intense terahertz electric field excitation, we show that an ultrafast phase…
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"Hidden phases" are metastable collective states of matter that are typically not accessible on equilibrium phase diagrams. These phases can host exotic properties in otherwise conventional materials and hence may enable novel functionality and applications, but their discovery and access are still in early stages. Using intense terahertz electric field excitation, we show that an ultrafast phase transition into a hidden ferroelectric phase can be dynamically induced in the quantum paraelectric SrTiO$_3$. The induced lowering in crystal symmetry yields dramatic changes in the phonon excitation spectra. Our results demonstrate collective coherent control over material structure, in which a single-cycle field drives ions along the microscopic pathway leading directly to their locations in a new crystalline phase on an ultrafast timescale.
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Submitted 27 December, 2018;
originally announced December 2018.
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Shift current bulk photovoltaic effect influenced by quasiparticles and excitons
Authors:
Ruixiang Fei,
Liang Z. Tan,
Andrew M. Rappe
Abstract:
We compute the shift current bulk photovoltaic effect (BPVE) in bulk BaTiO$_3$ and two-dimensional monochalcogenide SnSe considering quasi-particle corrections and exciton effects. We explore changes in shift current peak position and magnitude reduction due to band renormalization. For BaTiO$_3$, we demonstrate that shift current is reduced near the band edge due to exciton effects. Comparison of…
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We compute the shift current bulk photovoltaic effect (BPVE) in bulk BaTiO$_3$ and two-dimensional monochalcogenide SnSe considering quasi-particle corrections and exciton effects. We explore changes in shift current peak position and magnitude reduction due to band renormalization. For BaTiO$_3$, we demonstrate that shift current is reduced near the band edge due to exciton effects. Comparison of these results with experiments on BaTiO$_3$ indicate that mechanisms other than shift current may be contributing to BPVE. Additionally, we reveal that the shift current near the band gap shows only a small change due to excitons in two-dimensional SnSe, suggesting that the thin film geometry provides a feasible way to reduce the exciton effect on the shift current. These results suggest that many-body corrections are important for accurate assessments of bulk photovoltaic materials and to understand the mechanisms behind the BPVE
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Submitted 13 November, 2018;
originally announced November 2018.
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How Lattice and Charge Fluctuations Control Carrier Dynamics in Halide Perovskites
Authors:
Matthew Z. Mayers,
Liang Z. Tan,
David A. Egger,
Andrew M. Rappe,
David R. Reichman
Abstract:
Here we develop a microscopic approach aimed at the description of a suite of physical effects related to carrier transport in, and the optical properties of, halide perovskites. Our theory is based on the description of the nuclear dynamics to all orders and goes beyond the common assumption of linear electron-phonon coupling in describing the carrier dynamics and band gap characteristics. When c…
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Here we develop a microscopic approach aimed at the description of a suite of physical effects related to carrier transport in, and the optical properties of, halide perovskites. Our theory is based on the description of the nuclear dynamics to all orders and goes beyond the common assumption of linear electron-phonon coupling in describing the carrier dynamics and band gap characteristics. When combined with first-principles calculations and applied to the prototypical MAPbI$_{3}$ system, our theory explains seemingly disparate experimental findings associated with both the charge-carrier mobility and optical absorption properties, including their temperature dependencies. Our findings demonstrate that orbital overlap fluctuations in the lead-halide structure plays a significant role in determining the optoelectronic features of halide perovskites.
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Submitted 12 November, 2018;
originally announced November 2018.
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Automated selection of the local potential for transferable pseudopotentials
Authors:
Casey O. Barkan,
Andrew M. Rappe
Abstract:
We develop an automated procedure to select the local potential of a separable pseudopotential that minimizes transferability errors for the isolated atom, and we show that this optimization leads to significant improvements in the accuracy of predicted solid-state properties. We present pseudopotentials for Y, In, and Sn. For these pseudopotentials, our method reduces solid-state errors by 88% on…
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We develop an automated procedure to select the local potential of a separable pseudopotential that minimizes transferability errors for the isolated atom, and we show that this optimization leads to significant improvements in the accuracy of predicted solid-state properties. We present pseudopotentials for Y, In, and Sn. For these pseudopotentials, our method reduces solid-state errors by 88% on average, as measured by the $Δ$-factor test. These pseudopotentials are constructed in the Kleinman-Bylander form; however, our method is applicable to all separable pseudopotentials, such as ONCV pseudopotentials. We perform plane-wave convergence tests according to SSSP standards and show that the modifications to the local potential leave plane-wave convergence unchanged.
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Submitted 2 November, 2018;
originally announced November 2018.
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Topological Semimetals from first-principles
Authors:
Heng Gao,
Jörn W. F. Venderbos,
Youngkuk Kim,
Andrew M. Rappe
Abstract:
We review recent theoretical progress in the understanding and prediction of novel topological semimetals. Topological semimetals define a class of gapless electronic phases exhibiting topologically stable crossings of energy bands. Different types of topological semimetals can be distinguished based on the degeneracy of the band crossings, their codimension (e.g., point or line nodes), as well as…
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We review recent theoretical progress in the understanding and prediction of novel topological semimetals. Topological semimetals define a class of gapless electronic phases exhibiting topologically stable crossings of energy bands. Different types of topological semimetals can be distinguished based on the degeneracy of the band crossings, their codimension (e.g., point or line nodes), as well as the crystal space group symmetries on which the protection of stable band crossings relies. The dispersion near the band crossing is a further discriminating characteristic. These properties give rise to a wide range of distinct semimetal phases such as Dirac or Weyl semimetals, point or line node semimetals, and type-I or type-II semimetals. In this review we give a general description of various families of topological semimetals with an emphasis on proposed material realizations from first-principles calculations. The conceptual framework for studying topological gapless electronic phases is reviewed, with a particular focus on the symmetry requirements of energy band crossings, and the relation between the different families of topological semimetals is elucidated. In addition to the paradigmatic Dirac and Weyl semimetals, we pay particular attention to more recent examples of topological semimetals, which include nodal line semimetals, multifold fermion semimetals, triple-point semimetals. Less emphasis is placed on their surface state properties, responses to external probes, and recent experimental developments.
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Submitted 18 October, 2018;
originally announced October 2018.
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Breakdown of the static picture of defect energetics in halide perovskites: the case of the Br vacancy in CsPbBr3
Authors:
Ayala V. Cohen,
David A. Egger,
Andrew M. Rappe,
Leeor Kronik
Abstract:
We consider the Br vacancy in CsPbBr3 as a prototype for the impact of structural dynamics on defect energetics in halide perovskites (HaPs). Using first-principles molecular dynamics based on density functional theory, we find that the static picture of defect energetics breaks down; the energy of the Br vacancy level is found to be intrinsically dynamic, oscillating by as much as 1 eV on the ps…
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We consider the Br vacancy in CsPbBr3 as a prototype for the impact of structural dynamics on defect energetics in halide perovskites (HaPs). Using first-principles molecular dynamics based on density functional theory, we find that the static picture of defect energetics breaks down; the energy of the Br vacancy level is found to be intrinsically dynamic, oscillating by as much as 1 eV on the ps time scale at room temperature. These significant energy fluctuations are correlated with the distance between the neighboring Pb atoms across the vacancy and with the electrostatic potential at these Pb atomic sites. We expect this unusually strong coupling of structural dynamics and defect energetics to bear important implications for both experimental and theoretical analysis of defect characteristics in HaPs. It may also hold significant ramifications for carrier transport and defect tolerance in this class of photovoltaic materials.
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Submitted 27 June, 2019; v1 submitted 10 October, 2018;
originally announced October 2018.
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The Dirac-Weyl semimetal: Coexistence of Dirac and Weyl fermions in polar hexagonal $ABC$ crystals
Authors:
Heng Gao,
Youngkuk Kim,
Jörn W. F. Venderbos,
C. L. Kane,
E. J. Mele,
Andrew M. Rappe,
Wei Ren
Abstract:
We propose that the noncentrosymmetric LiGaGe-type hexagonal $ABC$ crystal SrHgPb realizes a new type of topological semimetal that hosts both Dirac and Weyl points in momentum space. The symmetry-protected Dirac points arise due to a band inversion and are located on the sixfold rotation $z$-axis, whereas the six pairs of Weyl points related by sixfold symmetry are located on the perpendicular…
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We propose that the noncentrosymmetric LiGaGe-type hexagonal $ABC$ crystal SrHgPb realizes a new type of topological semimetal that hosts both Dirac and Weyl points in momentum space. The symmetry-protected Dirac points arise due to a band inversion and are located on the sixfold rotation $z$-axis, whereas the six pairs of Weyl points related by sixfold symmetry are located on the perpendicular $k_z=0$ plane. By studying the electronic structure as a function of the buckling of the HgPb layer, which is the origin of inversion symmetry breaking, we establish that the coexistence of Dirac and Weyl fermions defines a phase separating two topologically distinct Dirac semimetals. These two Dirac semimetals are distinguished by the $\mathbb{Z}_2$ index of the $k_z=0$ plane and the corresponding presence or absence of 2D Dirac fermions on side surfaces. We formalize our first-principles calculations by deriving and studying a low-energy model Hamiltonian describing the Dirac-Weyl semimetal phase. We conclude by proposing several other materials in the non-centrosymmetric $ABC $ material class, in particular SrHgSn and CaHgSn, as candidates for realizing the Dirac-Weyl semimetal.
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Submitted 13 February, 2018;
originally announced February 2018.
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Spatially dispersive circular photogalvanic effect in a Weyl semimetal
Authors:
Zhurun Ji,
Gerui Liu,
Zachariah Addison,
Wen**g Liu,
Peng Yu,
Heng Gao,
Zheng Liu,
Andrew M. Rappe,
Charles L. Kane,
Eugene J. Mele,
Ritesh Agarwal
Abstract:
Weyl semimetals are gapless topological states of matter with broken inversion and/or time reversal symmetry, which can support unconventional responses to externally applied electrical, optical and magnetic fields. Here we report a new photogalvanic effect in type-II WSMs, MoTe2 and Mo0.9W0.1Te2, which are observed to support a circulating photocurrent when illuminated by circularly polarized lig…
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Weyl semimetals are gapless topological states of matter with broken inversion and/or time reversal symmetry, which can support unconventional responses to externally applied electrical, optical and magnetic fields. Here we report a new photogalvanic effect in type-II WSMs, MoTe2 and Mo0.9W0.1Te2, which are observed to support a circulating photocurrent when illuminated by circularly polarized light at normal incidence. This effect occurs exclusively in the inversion broken phase, where crucially we find that it is associated with a spatially varying beam profile via a new dispersive contribution to the circular photogalvanic effect (s-CPGE). The response functions derived for s-CPGE reveal the microscopic mechanism of this photocurrent, which are controlled by terms that are allowed in the absence of inversion symmetry, along with asymmetric carrier excitation and relaxation. By evaluating this response for a minimal model of a Weyl semimetal, we obtain the frequency dependent scaling behavior of this form of photocurrent. These results demonstrate opportunities for controlling photoresponse by patterning optical fields to store, manipulate and transmit information over a wide spectral range.
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Submitted 12 February, 2018;
originally announced February 2018.
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First-principles studies of the local structure and relaxor behavior of Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$-PbTiO$_3$-derived ferroelectric perovskite solid solutions
Authors:
Hengxin Tan,
Hiroyuki Takenaka,
Changsong Xu,
Wenhui Duan,
Ilya Grinberg,
Andrew M. Rappe
Abstract:
We have investigated the effect of transition metal dopants on the local structure of the prototypical 0.75 Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$-0.25 PbTiO$_3$ relaxor ferroelectric. We find that these dopants give rise to very different local structure and other physical properties. For example, when Mg is partially substituted by Cu or Zn, the displacement of Cu or Zn is much larger than that of Mg, an…
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We have investigated the effect of transition metal dopants on the local structure of the prototypical 0.75 Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$-0.25 PbTiO$_3$ relaxor ferroelectric. We find that these dopants give rise to very different local structure and other physical properties. For example, when Mg is partially substituted by Cu or Zn, the displacement of Cu or Zn is much larger than that of Mg, and is even comparable to that of Nb. The polarization of these systems is also increased, especially for the Cu-doped solution, due to the large polarizability of Cu and Zn. As a result, the predicted maximum dielectric constant temperatures ($T_m$) are increased. On the other hand, the replacement of a Ti atom with a Mo or Tc dramatically decreases the displacements of the cations and the polarization, and thus, the $T_m$ values are also substantially decreased. The higher $T_m$ cannot be explained by the conventional argument based on the ionic radii of the cations. Furthermore, we find that Cu, Mo, or Tc do** increase the cations displacement disorder. The effect of the dopants on the temperature dispersion $ΔT_m$, which is the change of $T_m$ for different frequencies, is also discussed. Our findings lay the foundation for further investigations of unexplored dopants.
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Submitted 29 November, 2017;
originally announced November 2017.
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Anion Exchange in II-VI Semiconducting Nanostructures via Atomic Templating
Authors:
Rahul Agarwal,
Nadia M. Krook,
Ming-Liang Ren,
Liang Z. Tan,
Wen**g Liu,
Andrew M. Rappe,
Ritesh Agarwal
Abstract:
Controlled chemical transformation of nanostructures is a promising technique to obtain precisely designed novel materials which are difficult to synthesize otherwise. We report high-temperature vapor phase anion exchange reactions to chemically transform II-VI semiconductor nanostructures (100-300 nm length scale) while retaining the single crystallinity, crystal structure, morphology and even de…
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Controlled chemical transformation of nanostructures is a promising technique to obtain precisely designed novel materials which are difficult to synthesize otherwise. We report high-temperature vapor phase anion exchange reactions to chemically transform II-VI semiconductor nanostructures (100-300 nm length scale) while retaining the single crystallinity, crystal structure, morphology and even defect distribution of the parent material via atomic templating. The concept of atomic templating is employed to obtain kinetically controlled, thermodynamically metastable structural phases such as zincblende CdSe and CdS from zincblende CdTe upon complete chemical replacement of Te with Se or S. The underlying transformation mechanisms are explained through first-principles density functional theory calculations. Atomic templating is a unique path to independently tune materials phase and composition at the nanoscale allowing synthesis of novel materials.
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Submitted 27 October, 2017;
originally announced October 2017.
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Spin-orbit enhanced carrier lifetimes in noncentrosymmetric semiconductors
Authors:
Liang Z. Tan,
Andrew M. Rappe
Abstract:
We show that the carrier recombination rate of noncentrosymmetric materials can be strongly modified by spin-orbit coupling. Our proposed mechanism involves the separation of conduction and valence bands into their respective spin components, which changes the transition dipole moments between them. The change in the carrier recombination can be either positive or negative in sign, or vary dependi…
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We show that the carrier recombination rate of noncentrosymmetric materials can be strongly modified by spin-orbit coupling. Our proposed mechanism involves the separation of conduction and valence bands into their respective spin components, which changes the transition dipole moments between them. The change in the carrier recombination can be either positive or negative in sign, or vary depending on the location of carriers in the Brillouin zone. We have performed a large scale DFT screening study to identify candidate materials that display this effect. We have selected three materials, Pb$_4$SeBr$_6$, ReTe$_3$Br$_5$, and CsCu(BiS$_2$)$_2$, which span the range of behaviors, and discuss their electronic band structure in greater detail. We find transition dipole moment enhancement factors of up to three orders of magnitude, reflecting the physical impact of spin-orbit coupling on the carrier lifetime. Therefore, further explorations of the spin-orbit coupling and lattice symmetry could prove to be useful for manipulating the photophysics of materials.
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Submitted 17 August, 2017;
originally announced August 2017.
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Upper limit on nonlinear optical processes: shift current and second harmonic generation in extended systems
Authors:
Liang Z. Tan,
Andrew M. Rappe
Abstract:
The response functions of a material characterize its behavior under external stimuli, such as electromagnetic radiation. Such responses may grow linearly with the amplitude of the incident radiation, as is the case of absorption, or may be nonlinear. The latter category includes a diverse set of phenomena such as second harmonic generation (SHG), shift current, sum frequency generation, and excit…
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The response functions of a material characterize its behavior under external stimuli, such as electromagnetic radiation. Such responses may grow linearly with the amplitude of the incident radiation, as is the case of absorption, or may be nonlinear. The latter category includes a diverse set of phenomena such as second harmonic generation (SHG), shift current, sum frequency generation, and excited state absorption, among others. Despite decades of research into nonlinear response theory, and the occasional discovery of materials with large nonlinear responses, there has been no systematic investigation into the maximum amount of nonlinear optical response attainable in solid-state materials. In this work, we present an upper bound on the second-order response functions of materials, which controls the SHG and shift current responses. We show that this bound depends on the band gap, band width, and geometrical properties of the material in question. We find that Kuzyk's bound for the maximum SHG of isolated molecules can be exceeded by conjugation or condensation of molecules to form molecular solids, and that strongly coupled systems generally have larger responses than weakly coupled or isolated ones. As a proof of principle, we perform first-principles calculations of the response tensors of a wide variety of materials, finding that the materials in our database do not yet saturate the upper bound. This suggests that new large SHG and shift current materials will likely be discovered by future materials research guided by the factors mentioned in this work.
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Submitted 17 August, 2017;
originally announced August 2017.
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Hybrid functional pseudopotentials
Authors:
**g Yang,
Liang Z. Tan,
Andrew M. Rappe
Abstract:
The consistency between the exchange-correlation functional used in pseudopotential construction and in the actual density functional theory calculation is essential for the accurate prediction of fundamental properties of materials. However, routine hybrid density functional calculations at present still rely on GGA pseudopotentials due to the lack of hybrid functional pseudopotentials. Here, we…
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The consistency between the exchange-correlation functional used in pseudopotential construction and in the actual density functional theory calculation is essential for the accurate prediction of fundamental properties of materials. However, routine hybrid density functional calculations at present still rely on GGA pseudopotentials due to the lack of hybrid functional pseudopotentials. Here, we present a scheme for generating hybrid functional pseudopotentials, and we analyze the importance of pseudopotential density functional consistency for hybrid functionals. We benchmark our PBE0 pseudopotentials for structural parameters and fundamental electronic gaps of the G2 molecular dataset and some simple solids. Our results show that using our new PBE0 pseudopotentials in PBE0 calculations improves agreement with respect to all-electron calculations.
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Submitted 12 July, 2017;
originally announced July 2017.
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Tribopolymer Formation Mechanism on the RuO$_2$(110) Surface
Authors:
**g Yang,
Yubo Qi,
Hyeong-Seok D. Kim,
Andrew M. Rappe
Abstract:
Tribopolymer formed on the contacts of microelectromechanical and nanoelectromechanical system (MEMS/NEMS) devices is a major concern hampering their practical use in information technology. Conductive metal oxides, such as RuO$_2$ and ReO$_3$, have been regarded as promising candidate materials for MEMS/NEMS contacts due to their conductivity, hardness, and relatively chemically inert surfaces. H…
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Tribopolymer formed on the contacts of microelectromechanical and nanoelectromechanical system (MEMS/NEMS) devices is a major concern hampering their practical use in information technology. Conductive metal oxides, such as RuO$_2$ and ReO$_3$, have been regarded as promising candidate materials for MEMS/NEMS contacts due to their conductivity, hardness, and relatively chemically inert surfaces. However, recent experimental works demonstrate that trace amounts of polymer could still form on RuO$_2$ surfaces. In this study, we demonstrate the mechanism of this class of unexpected tribopolymer formation by conducting density functional theory based computational compression experiments with benzene as the contamination gas. First, mechanical force during compression changes the benzene molecules from slightly physisorbed to strongly chemisorbed. Further compression causes deformation and chemical linkage of the benzene molecules. Finally, the two contacts detach, with one having a complex organic molecule attached and the other with a more reactive surface. The complex organic molecule, which has an oxabicyclic segment, can be viewed as the rudiment of tribopolymer, and the more reactive surface can trigger the next adsorption--reaction--tribopolymer formation cycle. Based on these results, we also predict tribopolymer formation rates by using transition--state theory and the second--order rate law. This study deepens our understanding of tribopolymer formation (especially on metal oxides) and provides strategies for suppressing tribopolymerization.
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Submitted 13 June, 2017;
originally announced June 2017.
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Wallpaper Fermions and the Nonsymmorphic Dirac Insulator
Authors:
Benjamin J. Wieder,
Barry Bradlyn,
Zhijun Wang,
Jennifer Cano,
Youngkuk Kim,
Hyeong-Seok D. Kim,
A. M. Rappe,
C. L. Kane,
B. Andrei Bernevig
Abstract:
Recent developments in the relationship between bulk topology and surface crystal symmetry have led to the discovery of materials whose gapless surface states are protected by crystal symmetries. In fact, there exists only a very limited set of possible surface crystal symmetries, captured by the 17 "wallpaper groups." We show that a consideration of symmetry-allowed band degeneracies in the wallp…
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Recent developments in the relationship between bulk topology and surface crystal symmetry have led to the discovery of materials whose gapless surface states are protected by crystal symmetries. In fact, there exists only a very limited set of possible surface crystal symmetries, captured by the 17 "wallpaper groups." We show that a consideration of symmetry-allowed band degeneracies in the wallpaper groups can be used to understand previous topological crystalline insulators, as well as to predict new examples. In particular, the two wallpaper groups with multiple glide lines, $pgg$ and $p4g$, allow for a new topological insulating phase, whose surface spectrum consists of only a single, fourfold-degenerate, true Dirac fermion. Like the surface state of a conventional topological insulator, the surface Dirac fermion in this "nonsymmorphic Dirac insulator" provides a theoretical exception to a fermion doubling theorem. Unlike the surface state of a conventional topological insulator, it can be gapped into topologically distinct surface regions while kee** time-reversal symmetry, allowing for networks of topological surface quantum spin Hall domain walls. We report the theoretical discovery of new topological crystalline phases in the A$_2$B$_3$ family of materials in SG 127, finding that Sr$_2$Pb$_3$ hosts this new topological surface Dirac fermion. Furthermore, (100)-strained Au$_2$Y$_3$ and Hg$_2$Sr$_3$ host related topological surface hourglass fermions. We also report the presence of this new topological hourglass phase in Ba$_5$In$_2$Sb$_6$ in SG 55. For orthorhombic space groups with two glides, we catalog all possible bulk topological phases by a consideration of the allowed non-abelian Wilson loop connectivities, and we develop topological invariants for these systems. Finally, we show how in a particular limit, these crystalline phases reduce to copies of the SSH model.
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Submitted 21 July, 2018; v1 submitted 3 May, 2017;
originally announced May 2017.
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Descriptors for thermal expansion in solids
Authors:
Joseph T. Schick,
Abhijith M. Gopakumar,
Andrew M. Rappe
Abstract:
Thermal expansion in materials can be accurately modeled with careful anharmonic phonon calculations within density functional theory. However, because of interest in controlling thermal expansion and the time consumed evaluating thermal expansion properties of candidate materials, either theoretically or experimentally, an approach to rapidly identifying materials with desirable thermal expansion…
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Thermal expansion in materials can be accurately modeled with careful anharmonic phonon calculations within density functional theory. However, because of interest in controlling thermal expansion and the time consumed evaluating thermal expansion properties of candidate materials, either theoretically or experimentally, an approach to rapidly identifying materials with desirable thermal expansion properties would be of great utility. When the ionic bonding is important in a material, we show that the fraction of crystal volume occupied by ions, (based upon ionic radii), the mean bond coordination, and the deviation of bond coordination are descriptors that correlate with the room-temperature coefficient of thermal expansion for these materials found in widely accessible databases. Correlation is greatly improved by combining these descriptors in a multi-dimensional fit. This fit reinforces the physical interpretation that open space combined with low mean coordination and a variety of local bond coordinations leads to materials with lower coefficients of thermal expansion, materials with single-valued local coordination and less open space have the highest coefficients of thermal expansion.
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Submitted 2 November, 2017; v1 submitted 14 January, 2017;
originally announced January 2017.
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Ultra-fast electric field control of giant electrocaloric effect in ferroelectrics
Authors:
Yubo Qi,
Shi Liu,
Aaron M. Lindenberg,
Andrew M. Rappe
Abstract:
There is a surge of interest in develo** environmentally friendly cooling technology based on the solid--state electrocaloric effect (ECE). Here, we point out that negative ECE with a fast cooling rate ($\approx$10$^{11}$ K/s) can be achieved by driving solid crystals to a high--temperature phase with a properly designed electric field pulse. Specifically, we predict that an ultrafast electric f…
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There is a surge of interest in develo** environmentally friendly cooling technology based on the solid--state electrocaloric effect (ECE). Here, we point out that negative ECE with a fast cooling rate ($\approx$10$^{11}$ K/s) can be achieved by driving solid crystals to a high--temperature phase with a properly designed electric field pulse. Specifically, we predict that an ultrafast electric field pulse can cause a negative ECE up to 35 K in PbTiO$_3$ occurring on few picosecond time scales. We acquire and analyze these results by clarifying the mechanism of ECE during an adiabatic irreversible process; In addition to the conventional explanation of the ECE with entropy reallocation, we simply portray the ECE with the concept of internal energy redistribution. Electric field does work on a ferroelectric crystal and redistributes its internal energy. How the kinetic energy is redistributed determines the temperature change and strongly depends on the electric field temporal profile. This concept is supported by our all--atom molecular dynamics simulations of PbTiO$_3$ and BaTiO$_3$. Based on this improved understanding of ECE, we propose strategies for inducing both giant and negative ECE. This work offers a more general framework to understand the ECE and highlights the opportunities of electric--field engineering for controlled design of fast and efficient cooling technology.
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Submitted 8 January, 2017;
originally announced January 2017.
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Adsorption of Benzene on the RuO2(110) Surface
Authors:
Hyeong-Seok D. Kim,
**g Yang,
Yubo Qi,
Andrew M. Rappe
Abstract:
Hydrocarbon tribopolymer, a type of polymer formed due to friction between surfaces, is a major impediment to the development of micro- and nanoelectromechanical systems (MEMS/NEMS) devices for industrial application. Tribopolymer buildup can prevent MEMS and NEMS from making or breaking electrical contact. We describe the adsorption of benzene (C6H6) on the RuO2(110) surface using density functio…
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Hydrocarbon tribopolymer, a type of polymer formed due to friction between surfaces, is a major impediment to the development of micro- and nanoelectromechanical systems (MEMS/NEMS) devices for industrial application. Tribopolymer buildup can prevent MEMS and NEMS from making or breaking electrical contact. We describe the adsorption of benzene (C6H6) on the RuO2(110) surface using density functional theory. This adsorption is an important initial step in the mechanism of hydrocarbon tribopolymer layer formation on MEMS and NEMS devices. The adsorption interaction is studied by considering three oxygen coverages of RuO2(110) and all the possible adsorption sites for benzene. We find that adsorption of benzene on O-poor RuO2(110) via C-Ru bonds is stronger than adsorption on the O-rich RuO2(110) via H-O bonds. For an in-depth study of the adsorption behavior, we include the van der Waals interaction for a holistic investigation. By incorporating the thermodynamic chemical potentials into the adsorption simulations, we describe a model that can provide guidance for realistic situations.
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Submitted 8 December, 2016;
originally announced December 2016.
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Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO$_3$
Authors:
F. Chen,
Y. Zhu,
S. Liu,
Y. Qi,
H. Y. Hwang,
N. C. Brandt,
J. Lu,
F. Quirin,
H. Enquist,
P. Zalden,
T. Hu,
J. Goodfellow,
M. -J. Sher,
M. C. Hoffmann,
D. Zhu,
H. Lemke,
J. Glownia,
M. Chollet,
A. R. Damodaran,
J. Park,
Z. Cai,
I. W. Jung,
M. J. Highland,
D. A. Walko,
J. W. Freeland
, et al. (9 additional authors not shown)
Abstract:
The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here we apply sub-picosecond duration, single-cycle terahertz pulses as an ultrafast electric field bias to prototypical BaTiO$_3$ ferroelectric thin films with the atomic-sc…
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The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here we apply sub-picosecond duration, single-cycle terahertz pulses as an ultrafast electric field bias to prototypical BaTiO$_3$ ferroelectric thin films with the atomic-scale response probed by femtosecond x-ray scattering techniques. We show that electric fields applied perpendicular to the ferroelectric polarization drive large amplitude displacements of the titanium atoms along the ferroelectric polarization axis, comparable to that of the built-in displacements associated with the intrinsic polarization and incoherent across unit cells. This effect is associated with a dynamic rotation of the ferroelectric polarization switching on and then off on picosecond timescales. These transient polarization modulations are followed by long-lived vibrational heating effects driven by resonant excitation of the ferroelectric soft mode, as reflected in changes in the c-axis tetragonality. The ultrafast structural characterization described here enables direct comparison with first-principles-based molecular dynamics simulations, with good agreement obtained.
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Submitted 31 October, 2016; v1 submitted 30 August, 2016;
originally announced August 2016.
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Enhanced charge ordering transition in doped CaFeO3 through steric templating
Authors:
Lai Jiang,
Diomedes Saldana-Greco,
Joseph T. Schick,
Andrew M. Rappe
Abstract:
We report density functional theory (DFT) investigation of $B$-site doped CaFeO$_3$, a prototypical charge-ordered perovskite. At 290 K, CaFeO$_3$ undergoes a metal-insulator transition and a charge disproportionation reaction 2Fe$^{4+}$$\rightarrow$Fe$^{5+}$+Fe$^{3+}$. We observe that when Zr dopants occupy a (001) layer, the band gap of the resulting solid solution increases to 0.93 eV due to a…
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We report density functional theory (DFT) investigation of $B$-site doped CaFeO$_3$, a prototypical charge-ordered perovskite. At 290 K, CaFeO$_3$ undergoes a metal-insulator transition and a charge disproportionation reaction 2Fe$^{4+}$$\rightarrow$Fe$^{5+}$+Fe$^{3+}$. We observe that when Zr dopants occupy a (001) layer, the band gap of the resulting solid solution increases to 0.93 eV due to a 2D Jahn-Teller type distortion, where FeO$_6$ cages on the $xy$ plane elongate along $x$ and $y$ alternatively between neighboring Fe sites. Furthermore, we show that the rock-salt ordering of the Fe$^{5+}$ and Fe$^{3+}$ cations can be enhanced when the $B$-site dopants are arranged in a (111) plane due to a collective steric effect that facilitates the size discrepancy between the Fe$^{5+}$O$_6$ and Fe$^{3+}$O$_6$ octahedra and therefore gives rise to a larger band gap. The enhanced charge disproportionation in these solid solutions is verified by rigorously calculating the oxidation states of the Fe cations with different octahedral cage sizes. We therefore predict that the corresponding transition temperature will increase due to the enhanced charge ordering and larger band gap. The compositional, structural and electrical relationships exploited in this paper can be extended to a variety of perovskites and non-perovskite oxides providing guidance in structurally manipulating electrical properties of functional materials.
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Submitted 12 August, 2016;
originally announced August 2016.
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Frequency-dependent dielectric function of semiconductors with application to physisorption
Authors:
Fan Zheng,
Jianmin Tao,
Andrew M. Rappe
Abstract:
The dielectric function is one of the most important quantities that describes the electrical and optical properties of solids. Accurate modeling of the frequency-dependent dielectric function has great significance in the study of the long-range van der Waals (vdW) interaction for solids and adsorption. In this work, we calculate the frequency-dependent dielectric functions of semiconductors and…
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The dielectric function is one of the most important quantities that describes the electrical and optical properties of solids. Accurate modeling of the frequency-dependent dielectric function has great significance in the study of the long-range van der Waals (vdW) interaction for solids and adsorption. In this work, we calculate the frequency-dependent dielectric functions of semiconductors and insulators using the $GW$ method with and without exciton effects, as well as efficient semilocal density functional theory (DFT), and compare these calculations with a model frequency-dependent dielectric function. We find that for semiconductors with moderate band gaps, the model dielectric functions, $GW$ values, and DFT calculations all agree well with each other. However, for insulators with strong exciton effects, the model dielectric functions have a better agreement with accurate $GW$ values than the DFT calculations, particularly in high-frequency region. To understand this, we repeat the DFT calculations with scissors correction, by shifting DFT Kohn-Sham energy gap to match the experimental band gap. We find that scissors correction only moderately improves the DFT dielectric function in low-frequency region. Based on the dielectric functions calculated with different methods, we make a comparative study by applying these dielectric functions to calculate the vdW coefficients ($C_3$ and $C_5$) for adsorption of rare-gas atoms on a variety of surfaces. We find that the vdW coefficients obtained with the nearly-free electron gas-based model dielectric function agree quite well with those obtained from the $GW$ dielectric function, in particular for adsorption on semiconductors, leading to an overall error of less than 7% for $C_3$ and 5% for $C_5$. This demonstrates the reliability of the model dielectric function for the study of physisorption.
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Submitted 29 June, 2016;
originally announced June 2016.