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Engineering of Niobium Surfaces Through Accelerated Neutral Atom Beam Technology For Quantum Applications
Authors:
Soumen Kar,
Conan Weiland,
Chenyu Zhou,
Ekta Bhatia,
Brian Martinick,
Jakub Nalaskowski,
John Mucci,
Stephen Olson,
Pui Yee Hung,
Ilyssa Wells,
Hunter Frost,
Corbet S. Johnson,
Thomas Murray,
Vidya Kaushik,
Sean Kirkpatrick,
Kiet Chau,
Michael J. Walsh,
Mingzhao Liu,
Satyavolu S. Papa Rao
Abstract:
A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontr…
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A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages Accelerated Neutral Atom Beam (ANAB) technology at 300 mm wafer scale. This ANAB beam is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 nm to 6 nm depending on ANAB process parameters. Modeling of variable-energy XPS data confirm thickness and compositional control of the Nb surface oxide by the ANAB process. These results correlate well with those from transmission electron microscopy and X-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times.
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Submitted 27 February, 2023;
originally announced February 2023.
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Chemical Mechanical Planarization for Ta-based Superconducting Quantum Devices
Authors:
Ekta Bhatia,
Soumen Kar,
Jakub Nalaskowski,
Tuan Vo,
Stephen Olson,
Hunter Frost,
John Mucci,
Brian Martinick,
Pui Yee Hung,
Ilyssa Wells,
Sandra Schujman,
Satyavolu S. Papa Rao
Abstract:
We report on the development of a chemical mechanical planarization (CMP) process for thick damascene Ta structures with pattern feature sizes down to 100 nm. This CMP process is the core of the fabrication sequence for scalable superconducting integrated circuits at 300 mm wafer scale. This work has established the elements of the various CMP-related design rules that can be followed by a designe…
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We report on the development of a chemical mechanical planarization (CMP) process for thick damascene Ta structures with pattern feature sizes down to 100 nm. This CMP process is the core of the fabrication sequence for scalable superconducting integrated circuits at 300 mm wafer scale. This work has established the elements of the various CMP-related design rules that can be followed by a designer for the layout of circuits that include Ta-based coplanar waveguide resonators, capacitors, and interconnects for tantalum-based qubits and single flux quantum (SFQ) circuits. The fabrication of these structures utilizes 193 nm optical lithography, along with 300 mm process tools for dielectric deposition, reactive ion etch, wet-clean, CMP and in-line metrology, all tools typical for a 300 mm wafer CMOS foundry. Process development was guided by measurements of physical and electrical characteristics of the planarized structures. Physical characterization such as atomic force microscopy across the 300 mm wafer surface showed local topography was less than 5 nm. Electrical characterization confirmed low leakage at room temperature, and less than 12% within wafer sheet resistance variation, for damascene Ta line-widths ranging from 100 nm to 3 μm. Run-to-run reproducibility was also evaluated. Effects of process integration choices including deposited thickness of Ta are discussed.
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Submitted 15 February, 2023; v1 submitted 15 February, 2023;
originally announced February 2023.
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Development of transmon qubits solely from optical lithography on 300mm wafers
Authors:
N. Foroozani,
C. Hobbs,
C. C. Hung,
S. Olson,
D. Ashworth,
E. Holland,
M. Malloy,
P. Kearney,
B. O'Brien,
B. Bunday,
D. DiPaola,
W. Advocate,
T. Murray,
P. Hansen,
S. Novak,
S. Bennett,
M. Rodgers,
B. Baker-O'Neal,
B. Sapp,
E. Barth,
J. Hedrick,
R. Goldblatt,
S. S. Papa Rao,
K. D. Osborn
Abstract:
Qubit information processors are increasing in footprint but currently rely on e-beam lithography for patterning the required Josephson junctions (JJs). Advanced optical lithography is an alternative patterning method, and we report on the development of transmon qubits patterned solely with optical lithography. The lithography uses 193 nm wavelength exposure and 300-mm large silicon wafers. Qubit…
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Qubit information processors are increasing in footprint but currently rely on e-beam lithography for patterning the required Josephson junctions (JJs). Advanced optical lithography is an alternative patterning method, and we report on the development of transmon qubits patterned solely with optical lithography. The lithography uses 193 nm wavelength exposure and 300-mm large silicon wafers. Qubits and arrays of evaluation JJs were patterned with process control which resulted in narrow feature distributions: a standard deviation of 0:78% for a 220 nm linewidth pattern realized across over half the width of the wafers. Room temperature evaluation found a 2.8-3.6% standard deviation in JJ resistance in completed chips. The qubits used aluminum and titanium nitride films on silicon substrates without substantial silicon etching. T1 times of the qubits were extracted at 26 - 27 microseconds, indicating a low level of material-based qubit defects. This study shows that large wafer optical lithography on silicon is adequate for high-quality transmon qubits, and shows a promising path for improving many-qubit processors.
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Submitted 22 February, 2019;
originally announced February 2019.
