Characterization and modeling of thermally-induced do** contaminants in high-purity Germanium
Authors:
Virginia Boldrini,
Gianluigi Maggioni,
Sara Carturan,
Walter Raniero,
Francesco Sgarbossa,
Ruggero Milazzo,
Daniel Ricardo Napoli,
Enrico Napolitani,
Davide De Salvador
Abstract:
High purity Ge (HPGe) is the key material for gamma ray detector production. Its high purity level (< 2x10^(-4) ppb of do** impurity) has to be preserved in the bulk during the processes needed to form the detector junctions. With the goal of improving the device performance and expanding the application fields, in this paper many alternative do** processes are evaluated, in order to verify th…
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High purity Ge (HPGe) is the key material for gamma ray detector production. Its high purity level (< 2x10^(-4) ppb of do** impurity) has to be preserved in the bulk during the processes needed to form the detector junctions. With the goal of improving the device performance and expanding the application fields, in this paper many alternative do** processes are evaluated, in order to verify their effect on the purity of the material. In more detail, we investigated the electrical activation of contaminating do** defects or impurities inside the bulk HPGe, induced by both conventional and non-conventional surface do** processes, such as B ion implantation, P and Ga diffusion from Spin-On Do** (SOD) sources, Sb equilibrium diffusion from a remote sputtered source and laser thermal annealing (LTA) of sputtered Sb. Do** defects, thermally-activated during high temperature annealing, were characterized through electrical measurements. A phenomenological model describing the contamination process was developed and used to analyze the diffusion parameters and possible process thermal windows. It resulted that out-of-equilibrium do** processes confined to the HPGe surface have higher possibilities to be successfully employed for the formation of thin contacts, maintaining the pristine purity of the bulk material. Among them, laser thermal annealing turned out to be the most promising.
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Submitted 2 July, 2018;
originally announced July 2018.
