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An Investigation into the Thermoelectric Characteristics of Silver-based Chalcopyrites Utilizing a Non-empirical Range-separated Dielectric-dependent Hybrid Approach
Authors:
Dimple Rani,
Subarata Jana,
Manish Kumar Niranjan,
Prasanjit Samal
Abstract:
Our investigation explores the intricate domain of thermoelectric phenomena within silver (Ag)-infused chalcopyrites, focusing on compositions such as AgXTe$_2$ (where X=Ga, In) and the complex quaternary system Ag$_2$ZnSn/GeY$_2$ (with Y=S, Se). Using a sophisticated combination of methodologies, we integrate a non-empirical screened dielectric-dependent hybrid (DDH) functional with semiclassical…
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Our investigation explores the intricate domain of thermoelectric phenomena within silver (Ag)-infused chalcopyrites, focusing on compositions such as AgXTe$_2$ (where X=Ga, In) and the complex quaternary system Ag$_2$ZnSn/GeY$_2$ (with Y=S, Se). Using a sophisticated combination of methodologies, we integrate a non-empirical screened dielectric-dependent hybrid (DDH) functional with semiclassical Boltzmann transport theory. This approach allows us to conduct a detailed analysis of critical thermoelectric properties, including electrical conductivity, Seebeck coefficient, and power factor. Our methodology goes beyond superficial assessments, delving into the intricate interplay of material properties to reveal their true thermoelectric potential. Additionally, we investigate the often-overlooked phenomena of phonon scattering by leveraging both the elastic constant tensor and the deformation potential method. This enables a rigorous examination of electron relaxation time and lattice thermal conductivity, enhancing the robustness of our predictions and demonstrating our commitment to thorough exploration.Through our rigorous investigation, we identify materials with a thermoelectric figure of merit (ZT = $σS^{2}T/ κ$) exceeding the critical threshold of unity. This significant achievement signals the discovery of materials capable of revolutionizing efficient thermoelectric systems. Our findings delineate a promising trajectory, laying the groundwork for the emergence of a new class of Ag-based chalcopyrites distinguished by their exceptional thermoelectric characteristics. This research not only contributes to the understanding of materials science principles but also catalyzes transformative advancements in thermoelectric technology.
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Submitted 19 May, 2024;
originally announced May 2024.
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Accurate and efficient prediction of the band gaps and optical spectra of chalcopyrite semiconductors from a non-empirical range-separated dielectric-dependent hybrid: Comparison with many-body perturbation theory
Authors:
Arghya Ghosh,
Subrata Jana,
Dimple Rani,
Manoar Hossain,
Manish K Niranjan,
Prasanjit Samal
Abstract:
The accurate prediction of electronic and optical properties in chalcopyrite semiconductors has been a persistent challenge for density functional theory (DFT) based approaches. Addressing this issue, we demonstrate that very accurate results can be obtained using a non-empirical screened dielectric-dependent hybrid (DDH) functional. This novel approach showcases its impressive capability to accur…
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The accurate prediction of electronic and optical properties in chalcopyrite semiconductors has been a persistent challenge for density functional theory (DFT) based approaches. Addressing this issue, we demonstrate that very accurate results can be obtained using a non-empirical screened dielectric-dependent hybrid (DDH) functional. This novel approach showcases its impressive capability to accurately determine band gaps, optical bowing parameters, and optical absorption spectra for chalcopyrite systems. What sets the screened DDH functional apart is its adeptness in capturing the many-body physics associated with highly localized $d$ electrons. Notably, the accuracy is comparable to the many-body perturbation based methods (such as $G_0W_0$ or its various approximations for band gaps and Bethe-Salpeter equation (BSE) on the top of the $G_0W_0$ or its various approximations for optical spectra) with less computational cost, ensuring a more accessible application across various research domains. The present results show the predictive power of the screened DDH functional, pointing toward promising applications where computational efficiency and predictive accuracy are crucial considerations. Overall, the screened DDH functional offers a compelling balance between cost-effectiveness and precision, making it a valuable tool for future endeavors in exploring chalcopyrite semiconductors and beyond.
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Submitted 30 January, 2024;
originally announced January 2024.
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Large thermo-spin effects in Heusler alloy based spin-gapless semiconductor thin films
Authors:
Amit Chanda,
Deepika Rani,
Derick DeTellem,
Noha Alzahrani,
Dario A. Arena,
Sarath Witanachchi,
Ratnamala Chatterjee,
Manh-Huong Phan,
Hariharan Srikanth
Abstract:
Recently, Heusler alloys-based spin gapless semiconductors (SGSs) with high Curie temperature (TC) and sizeable spin polarization have emerged as potential candidates for tunable spintronic applications. We report comprehensive investigation of the temperature dependent ANE and intrinsic longitudinal spin Seebeck effect (LSSE) in CoFeCrGa thin films grown on MgO substrates. Our findings show the a…
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Recently, Heusler alloys-based spin gapless semiconductors (SGSs) with high Curie temperature (TC) and sizeable spin polarization have emerged as potential candidates for tunable spintronic applications. We report comprehensive investigation of the temperature dependent ANE and intrinsic longitudinal spin Seebeck effect (LSSE) in CoFeCrGa thin films grown on MgO substrates. Our findings show the anomalous Nernst coefficient for the MgO/CoFeCrGa (95 nm) film is $\cong 1.86$ micro V/K at room temperature which is nearly two orders of magnitude higher than that of the bulk polycrystalline sample of CoFeCrGa (= 0.018 micro V/K) but comparable to that of the magnetic Weyl semimetal Co2MnGa thin film (2-3 micro V/K). Furthermore, the LSSE coefficient for our MgO/CoFeCrGa(95nm)/Pt(5nm) heterostructure is $\cong 20.5$ $μ$V/K/$Ω$ at room temperature which is twice larger than that of the half-metallic ferromagnetic La$_{0.7}$Sr$_{0.3}$MnO$_3$ thin films ($\cong$ 20.5 $μ$V/K/$Ω$). We show that both ANE and LSSE coefficients follow identical temperature dependences and exhibit a maximum at $\cong$ 225 K which is understood as the combined effects of inelastic magnon scatterings and reduced magnon population at low temperatures. Our analyses not only indicate that the extrinsic skew scattering is the dominating mechanism for ANE in these films but also provide critical insights into the functional form of the observed temperature dependent LSSE at low temperatures. Furthermore, by employing radio frequency transverse susceptibility and broadband ferromagnetic resonance in combination with the LSSE measurements, we establish a correlation among the observed LSSE signal, magnetic anisotropy and Gilbert dam** of the CoFeCrGa thin films, which will be beneficial for fabricating tunable and highly efficient Heusler alloys based spincaloritronic nanodevices.
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Submitted 18 August, 2023;
originally announced August 2023.
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Fabrication of Periodic, Flexible and Porous Silicon Microwire Arrays with Controlled Diameter and Spacing: Effects on Optical properties
Authors:
Anjali Saini,
Mohammed Abdelhameed,
Divya Rani,
Wipakorn Jevasuwan,
Naoki Fukata,
Premshila Kumari,
Sanjay K. Srivastava,
Prathap Pathi,
Arup Samanta,
Mrinal Dutta
Abstract:
A new method of introducing nanopores with spongy morphology during fabrication of size and pitch controlled flexible silicon microwires (SiMWs) in wafer scale is presented using nanosphere lithography technique in addition to metal catalyzed electroless etching technique by varying concentration of oxidant and introducing surfactant or co-solvents to the etching solution. For achieving self-assem…
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A new method of introducing nanopores with spongy morphology during fabrication of size and pitch controlled flexible silicon microwires (SiMWs) in wafer scale is presented using nanosphere lithography technique in addition to metal catalyzed electroless etching technique by varying concentration of oxidant and introducing surfactant or co-solvents to the etching solution. For achieving self-assembled monolayer closed-pack pattern of SiO2 microparticles in wafer-scale simple spin coating process was used. The effect of variation of the etchant, oxidant and surfactant on the morphology and optical properties of SiMWs were studied. By simply controlling the diameter of SiO2 microparticles and concentration of H2O2 the size of the MWs as well as the introduction of pores could be controlled in wafer-scale. Average reflectance suppressed to below 8% in the broad spectral range of 400-800 nm for these porous, spongy and flexible SiMW arrays in wafer scale. The mechanism behind this formation of spongy, porous and flexible nature of the SiMWs is also demonstrated for a better understanding of the etching process.
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Submitted 10 June, 2022;
originally announced July 2022.
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Lithography Free Process for the Fabrication of Periodic Silicon Micro/Nano-Wire Arrays and Its Light-trap** Properties
Authors:
Divya Rani,
Anil Kumar,
Anjali Sain,
Deepika Singh,
Neeraj Joshi,
Ravi Kumar Varma,
Mrinal Dutta,
Arup Samanta
Abstract:
Vertically aligned silicon micro/nanowire arrays of different sizes have been synthesized by combining the modified metal-assisted chemical etching (MACE) and reactive ion etching (RIE) methods. This is a novel lithography-free method to fabricate silicon micro/nanowire arrays. The size of micro/nanowire arrays is controlled by controlling the etching rate and diameter of silica particles. The sil…
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Vertically aligned silicon micro/nanowire arrays of different sizes have been synthesized by combining the modified metal-assisted chemical etching (MACE) and reactive ion etching (RIE) methods. This is a novel lithography-free method to fabricate silicon micro/nanowire arrays. The size of micro/nanowire arrays is controlled by controlling the etching rate and diameter of silica particles. The silicon micro/nanowire geometry can utilize for efficient collection of photo-generated charge carriers from impure silicon wafers, which have a short minority carrier diffusion length also act as a self-antireflection coating layer. For micro/nanowire having average diameters of 40 nm, 330 nm and 950 nm and their corresponding average length 1.12 micron, 1.1 micron, and 1 micron, respectively, the observed average reflectance was 0.22, 0.6 and 0.33 percent at 45-degree incident angle, while the average reflectance was increased up to 4.2, 9.2, and 11 percent, respectively at 75-degree incident angle in the broad range of 300 - 1200 nm of the solar spectrum. The measured average reflectance for these samples is quite low compared to the planar silicon wafer. Thus this geometry is a promising candidate for fabricating low-cost and highly efficient radial junction silicon micro/nanowire arrays based solar cells.
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Submitted 21 March, 2022;
originally announced March 2022.
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Lithography free method to synthesize the ultra-low reflection inverted-pyramid arrays for ultra-thin silicon solar cell
Authors:
Anil Kumar,
Divya Rani,
Anjali Sain,
Neeraj Joshi,
Ravi Kumar Varma,
Mrinal Dutta,
Arup Samanta
Abstract:
Silicon inverted pyramids arrays have been suggested as one of the most promising structure for high-efficient ultrathin solar cells due to their ability of superior light absorption and low enhancement of surface area. However, the existing techniques for such fabrication are either expensive or not able to create appropriate structure. Here, we present a lithography free method for the fabricati…
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Silicon inverted pyramids arrays have been suggested as one of the most promising structure for high-efficient ultrathin solar cells due to their ability of superior light absorption and low enhancement of surface area. However, the existing techniques for such fabrication are either expensive or not able to create appropriate structure. Here, we present a lithography free method for the fabrication of inverted pyramid arrays by using a modified metal assisted chemical etching (MACE) method. The size and inter-inverted pyramids spacing can also be controlled through this method. We used an isotropic chemical etching technique for this process to control the angle of etching, which leads to ultra-low reflection, even < 0.5%, of this nanostructure. Using this specification, we have predicted the expected solar cell parameters, which exceeds the Lambertian limit. This report provides a new pathway to improve the efficiency of the ultrathin silicon solar cells at lower cost.
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Submitted 20 March, 2022;
originally announced March 2022.
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Disorder-mediated quenching of magnetization in NbVTiAl: Theory and Experiment
Authors:
Deepika Rani,
Jiban Kangsabanik,
K. G. Suresh,
Aftab Alam
Abstract:
In this paper, we present the structural, electronic, magnetic and transport properties of a equiatomic quaternary alloy NbVTiAl. The absence of (111) and (200) peaks in X-ray diffraction (XRD) data confirms the A2-type structure. Magnetization measurements indicate a high Curie temperature and a negligibly small magnetic moment ($\sim 10^{-3} μ_B/f.u.$) These observations are indicative of fully…
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In this paper, we present the structural, electronic, magnetic and transport properties of a equiatomic quaternary alloy NbVTiAl. The absence of (111) and (200) peaks in X-ray diffraction (XRD) data confirms the A2-type structure. Magnetization measurements indicate a high Curie temperature and a negligibly small magnetic moment ($\sim 10^{-3} μ_B/f.u.$) These observations are indicative of fully compensated ferrimagnetism in the alloy. Temperature-dependent resistivity indicates metallic nature. Ab-initio calculation of fully ordered NbVTiAl structure confirms a nearly half metallic behavior with a high spin polarization ($\sim$ 90 \%) and a net magnetic moment of 0.8 $μ_B/f.u.$ (in complete contrast to the experimental observation). One of the main objective of the present paper is to resolve and explain the long-standing discrepancy between theoretical prediction and experimental observation of magnetization for V-based quaternary Heusler alloys, in general. To gain an in-depth understanding, we modelled various disordered states and its subsequent effect on the magnetic and electronic properties. The discrepancy is attributed to the A2 disorder present in the system, as confirmed by our XRD data. The presence of disorder also causes the emergence of finite states at the Fermi level, which impacts the spin polarization of the system.
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Submitted 31 January, 2022;
originally announced January 2022.
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CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications
Authors:
Jadupati Nag,
Deepika Rani,
Durgesh Singh,
R. Venkatesh,
Bhawna Sahni,
A. K. Yadav,
S. N. Jha,
D. Bhattacharyya,
P. D. Babu,
K. G. Suresh,
Aftab Alam
Abstract:
We report a combined theoretical and experimental study of a novel quaternary Heusler system CoFeVSb from the view point of room temperature spintronics and thermoelectric applications. It crystallizes in cubic structure with small DO$_3$-type disorder. The presence of disorder is confirmed by room temperature synchrotron X-ray diffraction(XRD) and extended X-ray absorption fine structure (EXAFS)…
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We report a combined theoretical and experimental study of a novel quaternary Heusler system CoFeVSb from the view point of room temperature spintronics and thermoelectric applications. It crystallizes in cubic structure with small DO$_3$-type disorder. The presence of disorder is confirmed by room temperature synchrotron X-ray diffraction(XRD) and extended X-ray absorption fine structure (EXAFS) measurements. Magnetization data reveal high ordering temperature with a saturation magnetization of 2.2 $μ_B$/f.u. Resistivity measurements reflect half-metallic nature. Double hysteresis loop along with asymmetry in the magnetoresistance(MR) data reveals room temperature spin-valve feature, which remains stable even at 300 K. Hall measurements show anomalous behavior with significant contribution from intrinsic Berry phase. This compound also large room temperature power factor ($\sim0.62$ mWatt/m/K$^{2}$) and ultra low lattice thermal conductivity ($\sim0.4$ W/m/K), making it a promising candidate for thermoelectric application. Ab-initio calculations suggest weak half-metallic behavior and reduced magnetization (in agreement with experiment) in presence of DO$_3$ disorder. We have also found an energetically competing ferromagnetic FM)/antiferromagnetic (AFM) interface structure within an otherwise FM matrix: one of the prerequisites for spin valve behavior. Coexistence of so many promising features in a single system is rare, and hence CoFeVSb gives a fertile platform to explore numerous applications in future.
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Submitted 28 November, 2021;
originally announced November 2021.
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Bipolar Magnetic Semiconducting Behavior in VNbRuAl: A New Spintronic Material for Spin Filters
Authors:
Jadupati Nag,
Deepika Rani,
Jiban Kangsabanik,
P. D. Babu,
K. G. Suresh,
Aftab Alam
Abstract:
We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin up and down channels, and thus are useful for tunable spin transport based applications such as spin filters. The valence band (VB) and conduction band (CB) in…
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We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin up and down channels, and thus are useful for tunable spin transport based applications such as spin filters. The valence band (VB) and conduction band (CB) in BMS approach the Fermi level through opposite spin channels, and hence facilitate to achieve reversible spin polarization which are controllable via applied gate voltage. We report the quaternary Heusler alloy VNbRuAl to exactly possess the band structure of BMS. The alloy is found to crystallize in LiMgPdSn prototype structure (space group $F\bar{4}3m$) with B$2$ disorder and lattice parameter 6.15 Å. The resistivity and Hall measurements show a two channel semiconducting behavior and a quasi linear dependence of negative magneto resistance (MR) indicating the possible semiconducting nature. Interestingly, VNbRuAl also shows a fully compensated ferrimagnetic (FCF) behavior with vanishing net magnetization (m$_s$$\sim$ $10^{-3}$ $μ_B/f.u.$) and significantly high ordering temperature ($> 900$ K). Unlike conventional FCF, vanishing moment in this case appears to be the result of a combination of long range antiferromagnetic (AFM) ordering and the inherent B2 disorder of the crystal. This study opens up the possibility of finding a class of materials for AFM spintronics, with great significance both from fundamental and applied fronts.
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Submitted 1 November, 2020;
originally announced November 2020.
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Half-metallic ferromagnetism and Ru-induced localization in quaternary Heusler alloy CoRuMnSi
Authors:
Y. Venkateswara,
Deepika Rani,
K. G. Suresh,
Aftab Alam
Abstract:
We report a combined theoretical and experimental investigation of half-metallic ferromagnetism in equiatomic quaternary Heusler alloy CoRuMnSi. Room temperature XRD analysis reveals that the alloy crystallizes in L21 disorder instead of pristine Y-type structure due to 50% swap disorder between the tetrahedral sites, i.e., Co and Ru atoms. Magnetization measurements reveal a net magnetization of…
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We report a combined theoretical and experimental investigation of half-metallic ferromagnetism in equiatomic quaternary Heusler alloy CoRuMnSi. Room temperature XRD analysis reveals that the alloy crystallizes in L21 disorder instead of pristine Y-type structure due to 50% swap disorder between the tetrahedral sites, i.e., Co and Ru atoms. Magnetization measurements reveal a net magnetization of 4 $μ_B$ with Curie temperature of ~780 K. Resistivity measurement reveals the presence of localization effect below 35 K while above 100 K, a linear dependence is observed. Resistivity behavior indicates the absence of single magnon scattering, which indirectly supports the half-metallic nature. The majority spin band near the Fermi level clearly indicates the overlap of flat eg bands with sharply varying conduction bands that are responsible for the localization. In-depth analysis of the projected atomic d-orbital character of band structure reveals unusual bonding, giving rise to the flat eg bands purely arising out of Ru ions. Co-Ru swap disorder calculations indicate the robustness of half-metallic nature, even when the structure changes from Y-type to L21-type, with no major change in the net magnetization of the system. Thus, robust half-metallic nature, stable structure, and high Curie temperature make this alloy quite a promising candidate to be used as a source of highly spin-polarized currents in spintronic applications.
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Submitted 21 August, 2019;
originally announced August 2019.
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High Performance Fin-FET electrochemical sensor with high-k dielectric materials
Authors:
Serena Rollo,
Dipti Rani,
Wouter Olthuis,
César Pascual García
Abstract:
In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and thus a better signal to noise ratio), increased dynamic range and chemical stability. We used pH sensing to verify the design. We explored the sensitivity and res…
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In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and thus a better signal to noise ratio), increased dynamic range and chemical stability. We used pH sensing to verify the design. We explored the sensitivity and response linearity of silicon dioxide, alumina and hafnium oxide as dielectric materials sensing pH, and compared their chemical stability in different acids. The high aspect ratio fin geometry of the sensor provides high currents, as well as a planar conduction channel more reliable than traditional silicon nanowires. The hafnium oxide Fin-FET configuration performed the best delivering the most linear response both for the output and transfer characteristics providing a wider dynamic range. Hafnium oxide also showed the best chemical stability. Thus, we believe that the developed high aspect ratio Fin-FETs/high-k dielectric system can offer the best compromise of performance of FET-based sensors.
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Submitted 25 July, 2019;
originally announced July 2019.
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Experimental and Theoretical Investigation on the Possible Half-metallic Behaviour of Equiatomic Quaternary Heusler Alloys: CoRuMnGe and CoRuVZ (Z = Al, Ga)
Authors:
Deepika Rani,
Lakhan Bainsla,
K. G. Suresh,
Aftab Alam
Abstract:
In this report, structural, electronic, magnetic and transport properties of quaternary Heusler alloys CoRuMnGe and CoRuVZ (Z = Al, Ga) are investigated. All the three alloys are found to crystallize in cubic structure. CoRuMnGe exhibits L2$_1$ structure whereas, the other two alloys have B2-type disorder. For CoRuMnGe and CoRuVGa, the experimental magnetic moments are in close agreement with the…
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In this report, structural, electronic, magnetic and transport properties of quaternary Heusler alloys CoRuMnGe and CoRuVZ (Z = Al, Ga) are investigated. All the three alloys are found to crystallize in cubic structure. CoRuMnGe exhibits L2$_1$ structure whereas, the other two alloys have B2-type disorder. For CoRuMnGe and CoRuVGa, the experimental magnetic moments are in close agreement with the theory as well as those predicted by the Slater-Pauling rule, while for CoRuVAl, a relatively large deviation is seen. The reduction in the moment in case of CoRuVAl possibly arises due to the anti-site disorder between Co and Ru sites as well as V and Al sites. Among these alloys, CoRuMnGe has the highest T$\mathrm{_C}$ of 560 K. Resistivity variation with temperature reflects the half-metallic nature in CoRuMnGe alloy. CoRuVAl shows metallic character in both paramagnetic and ferromagnetic states, whereas the temperature dependence of resistivity for CoRuVGa is quite unusual. In the last system, $ρ$ vs. T curve shows an anomaly in the form of a maximum and a region of negative temperature coefficient of resistivity (TCR) in the magnetically ordered state. The ab initio calculations predict nearly half-metallic ferromagnetic state with high spin polarization of 91, 89 and 93 \% for CoRuMnGe, CoRuVAl and CoRuVGa respectively. To investigate the electronic properties of the experimentally observed structure, the Co-Ru swap disordered structures of CoRuMnGe alloy are also simulated and it is found that the disordered structures retain half-metallic nature, high spin polarization with almost same magnetic moment as in the ideal structure. Nearly half-metallic character, high T$\mathrm{_C}$ and high spin polarization make CoRuMnGe alloy promising for room temperature spintronic applications.
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Submitted 2 August, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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A high aspect ratio Fin-Ion Sensitive Field Effect Transistor: compromises towards better electrochemical bio-sensing
Authors:
Serena Rollo,
Dipti Rani,
Renaud Leturcq,
Wouter Olthuis,
César Pascual García
Abstract:
The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturisation with the expectation of improving sensitivity…
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The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturisation with the expectation of improving sensitivity and response time, but presenting issues with reproducibility and noise level. Here we propose a Fin-Field Effect Transistor (FinFET) with a high heigth to width aspect ratio for electrochemical biosensing solving the issue of nanosensors in terms of reproducibility and noise, while kee** the fast response time. We fabricated different devices and characterised their performance with their response to the pH changes that fitted to a Nernst-Poisson model. The experimental data were compared with simulations of devices with different aspect ratio, stablishing an advantage in total signal and linearity for the FinFETs with higher aspect ratio. In addition, these FinFETs promise the optimisation of reliability and efficiency in terms of limits of detection, for which the interplay of the size and geometry of the sensor with the diffusion of the analytes plays a pivotal role.
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Submitted 8 January, 2019;
originally announced January 2019.
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Spin Gapless Semiconducting Nature in Co-rich Co1+xFe1-xCrGa: Insight and Advancements
Authors:
Deepika Rani,
Enamullah,
Lakhan Bainsla,
K. G. Suresh,
Aftab Alam
Abstract:
In this report, we present structural, electronic, magnetic and transport properties of Co-rich spin gapless semiconductor CoFeCrGa using both theoretical and experimental techniques. The key advantage of Co-rich samples $\mathrm{Co_{1+x}Fe_{1-x}CrGa}$ is the high Curie temperature (T$\mathrm{_C}$) and magnetization, without compromising the SGS nature (up to x = 0.4), and hence our choice. The qu…
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In this report, we present structural, electronic, magnetic and transport properties of Co-rich spin gapless semiconductor CoFeCrGa using both theoretical and experimental techniques. The key advantage of Co-rich samples $\mathrm{Co_{1+x}Fe_{1-x}CrGa}$ is the high Curie temperature (T$\mathrm{_C}$) and magnetization, without compromising the SGS nature (up to x = 0.4), and hence our choice. The quaternary Heusler alloys $\mathrm{Co_{1+x}Fe_{1-x}CrGa}$ (x = 0.1 to 0.5) are found to crystallize in LiMgPdSn-type structure having space group $F\bar{4}3m$ (\# 216). The measured Curie temperature increases from 690 K (x = 0) to 870 K (x = 0.5). Observed magnetization values follow the Slater-Pauling rule. Measured electrical resistivity, in the temperature range of 5-350 K, suggests that the alloys retain the SGS behavior up to x = 0.4, beyond which it reflects metallic character. Unlike conventional semiconductors, the conductivity value ($\mathrm{σ_{xx}}$) at 300 K lies in the range of 2289 S $\mathrm{cm^{-1}}$ to 3294 S $\mathrm{cm^{-1}}$, which is close to that of other reported SGS materials. The anomalous Hall effect is comparatively low. The intrinsic contribution to the anomalous Hall conductivity increase with x, which can be correlated with the enhancement in chemical order. The anomalous Hall coefficient is found to increase from 38 S/cm for x = 0.1 to 43 S/cm for 0.3. Seebeck coefficients turn out to be vanishingly small below 300 K, another signature for being SGS. All the alloys (for different x) are found to be both chemically and thermally stable. Simulated magnetization agrees fairly with the experiment. As such Co-rich CoFeCrGa is a promising candidate for room temperature spintronic applications, with enhanced T$\mathrm{_C}$, magnetic properties and SGS nature.
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Submitted 30 November, 2018;
originally announced November 2018.
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$\mathrm{Co_2Fe_{1-x}Cr_xSi}$ Heusler Alloys : A promising material for spintronics application
Authors:
Deepika Rani,
Jiban Kangsabanik,
K. G. Suresh,
N. Patra,
D. Bhattacharyya,
S. N. Jha,
Aftab Alam
Abstract:
In this article, we investigated the effect of Cr substitution in place of Fe on the structural, magnetic and transport properties of $\mathrm{Co_2FeSi}$ alloy. A comprehensive structural analysis is done using X-ray diffraction (XRD) and extended X-ray absorption fine structure (EXAFS) spectroscopy. Quaternary Heusler compounds $\mathrm{Co_2Fe_{1-x}Cr_xSi}$ with Cr content (x = 0.1, 0.3, 0.5) wer…
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In this article, we investigated the effect of Cr substitution in place of Fe on the structural, magnetic and transport properties of $\mathrm{Co_2FeSi}$ alloy. A comprehensive structural analysis is done using X-ray diffraction (XRD) and extended X-ray absorption fine structure (EXAFS) spectroscopy. Quaternary Heusler compounds $\mathrm{Co_2Fe_{1-x}Cr_xSi}$ with Cr content (x = 0.1, 0.3, 0.5) were found to crystallize in cubic structure. The synchrotron based EXAFS studies reveal that the anti-site disorder increases with the increase in Cr concentration. The saturation magnetization values in all the alloys are found to be less than those expected from the Slater-Pauling rule, which may be due to the some inherent disorder. A detailed resistivity analysis in the temperature range of 5-300 K is done, taking into account different scattering mechanisms. The residual resistivity ratio is found to decrease with increasing Cr concentration. A disorder induced resistivity minimum due to weak localization effect is seen for x = 0.5. The resistivity measurements also indicate that the half-metallic character survives upto 100 K for x = 0.1, whereas the alloys with x= 0.3 and 0.5 show signature of half- metallic nature even at higher temperatures. First principles calculation done with a more robust exchange correlation functional (namely HSE-06) confirms the half metallicity in the entire concentration range. Theoretically simulated band gap and magnetic moments compliment the experimental findings and are compared wherever possible. All these properties make $\mathrm{Co_2Fe_{1-x}Cr_xSi}$ a promising material for spintronics application.
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Submitted 15 April, 2018;
originally announced April 2018.
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Structural, electronic, magnetic and transport properties of equiatomic quaternary Heusler Alloy CoRhMnGe: Theory and Experiment
Authors:
Deepika Rani,
Enamullah,
K. G. Suresh,
A. K. Yadav,
S. N. Jha,
D. Bhattacharyya,
Manoj Raama Varma,
Aftab Alam
Abstract:
In this work, we present structural, electronic, magnetic, mechanical and transport properties of equiatomic quaternary Heusler alloy, CoRhMnGe using both theoretical and experimental techniques. A detailed structural analysis is performed using X-ray diffraction(XRD) and extended X-ray absorption fine structure(EXAFS) spectroscopy. The alloy is found to crystallize in Y-type structure having spac…
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In this work, we present structural, electronic, magnetic, mechanical and transport properties of equiatomic quaternary Heusler alloy, CoRhMnGe using both theoretical and experimental techniques. A detailed structural analysis is performed using X-ray diffraction(XRD) and extended X-ray absorption fine structure(EXAFS) spectroscopy. The alloy is found to crystallize in Y-type structure having space group $F\bar{4}3m$ (\# 216). The ab-initio simulation pedict half-metallic ferromagnetic characteristics leading to large spin polarization. The calculated magnetization is found to be in fair agreement with experiment as well as those predicted by the Slater-Pauling rule, which is a prerequisite for half-metallicity. The magnetic transition temperature($\mathrm{T_{C}}$) is found to be $\sim 760$ K. Measured electrical resistivity in the temperature range 2-400 K also gives an indication of half-metallic behavior. Simulated resistivity matches fairly well with those measured, with the temperature dependant carrier relaxation time lying in the range $1-2$ fs. Effect of hydrostatic pressure on electronic structure, magnetic and mechanical properties are investigated in detail. The alloy is found to preserve half-metallic characteristics upto 30.27 GPa beyond which it transit to metallic phase. No magnetic phase transition is found to occur in the whole range of pressure. The system also satisfies the Born-Huang criteria for mechanical stability upto a limited range of pressure. All these properties make CoRhMnGe alloy promising for spintronics devices.
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Submitted 6 June, 2017;
originally announced June 2017.
